JP2012501474A5 - - Google Patents

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Publication number
JP2012501474A5
JP2012501474A5 JP2011525073A JP2011525073A JP2012501474A5 JP 2012501474 A5 JP2012501474 A5 JP 2012501474A5 JP 2011525073 A JP2011525073 A JP 2011525073A JP 2011525073 A JP2011525073 A JP 2011525073A JP 2012501474 A5 JP2012501474 A5 JP 2012501474A5
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JP
Japan
Prior art keywords
shots
pattern
vsb
determining
substrate
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JP2011525073A
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English (en)
Japanese (ja)
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JP5739808B2 (ja
JP2012501474A (ja
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Priority claimed from US12/202,364 external-priority patent/US7759026B2/en
Priority claimed from US12/202,366 external-priority patent/US7759027B2/en
Priority claimed from US12/202,365 external-priority patent/US7901845B2/en
Priority claimed from US12/473,265 external-priority patent/US7901850B2/en
Priority claimed from US12/473,248 external-priority patent/US7981575B2/en
Priority claimed from US12/473,241 external-priority patent/US7754401B2/en
Application filed filed Critical
Priority claimed from PCT/US2009/053328 external-priority patent/WO2010025032A2/en
Publication of JP2012501474A publication Critical patent/JP2012501474A/ja
Publication of JP2012501474A5 publication Critical patent/JP2012501474A5/ja
Publication of JP5739808B2 publication Critical patent/JP5739808B2/ja
Application granted granted Critical
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JP2011525073A 2008-09-01 2009-08-10 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法 Active JP5739808B2 (ja)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US12/202,364 US7759026B2 (en) 2008-09-01 2008-09-01 Method and system for manufacturing a reticle using character projection particle beam lithography
US12/202,364 2008-09-01
US12/202,365 2008-09-01
US12/202,366 2008-09-01
US12/202,365 US7901845B2 (en) 2008-09-01 2008-09-01 Method for optical proximity correction of a reticle to be manufactured using character projection lithography
US12/202,366 US7759027B2 (en) 2008-09-01 2008-09-01 Method and system for design of a reticle to be manufactured using character projection lithography
US12/269,777 2008-11-12
US12/269,777 US7745078B2 (en) 2008-09-01 2008-11-12 Method and system for manufacturing a reticle using character projection lithography
US12/473,241 2009-05-27
US12/473,248 2009-05-27
US12/473,248 US7981575B2 (en) 2008-09-01 2009-05-27 Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography
US12/473,265 US7901850B2 (en) 2008-09-01 2009-05-27 Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US12/473,265 2009-05-27
US12/473,241 US7754401B2 (en) 2008-09-01 2009-05-27 Method for manufacturing a surface and integrated circuit using variable shaped beam lithography
PCT/US2009/053328 WO2010025032A2 (en) 2008-09-01 2009-08-10 Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014248818A Division JP5970052B2 (ja) 2008-09-01 2014-12-09 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法

Publications (3)

Publication Number Publication Date
JP2012501474A JP2012501474A (ja) 2012-01-19
JP2012501474A5 true JP2012501474A5 (enExample) 2012-11-01
JP5739808B2 JP5739808B2 (ja) 2015-06-24

Family

ID=43857606

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011525073A Active JP5739808B2 (ja) 2008-09-01 2009-08-10 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法
JP2014248818A Active JP5970052B2 (ja) 2008-09-01 2014-12-09 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014248818A Active JP5970052B2 (ja) 2008-09-01 2014-12-09 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法

Country Status (6)

Country Link
EP (1) EP2321840B1 (enExample)
JP (2) JP5739808B2 (enExample)
KR (2) KR20110069044A (enExample)
CN (1) CN102138201B (enExample)
TW (1) TWI525399B (enExample)
WO (1) WO2010025032A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US20130070222A1 (en) * 2011-09-19 2013-03-21 D2S, Inc. Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography
US8703389B2 (en) * 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
JP2013207182A (ja) * 2012-03-29 2013-10-07 Toppan Printing Co Ltd 荷電ビーム投影露光用マスクの製造方法及び荷電ビーム投影露光用マスク
US9038003B2 (en) * 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
FR2994749B1 (fr) * 2012-08-24 2015-07-24 Commissariat Energie Atomique Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants.
US8667428B1 (en) * 2012-10-24 2014-03-04 GlobalFoundries, Inc. Methods for directed self-assembly process/proximity correction
US8959463B2 (en) * 2012-11-08 2015-02-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
TWI512389B (zh) * 2013-02-22 2015-12-11 Globalfoundries Us Inc 定向自組裝製程／鄰近校正之方法
TWI612373B (zh) * 2014-07-24 2018-01-21 聯華電子股份有限公司 光學鄰近修正驗證系統及其驗證方法
KR102395198B1 (ko) 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
EP3153926B1 (en) * 2015-10-06 2020-04-22 Aselta Nanographics A method of reducing shot count in direct writing by a particle or photon beam
JP6674306B2 (ja) * 2016-03-31 2020-04-01 キヤノン株式会社 照明装置、光学装置、インプリント装置、投影装置、及び物品の製造方法
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US11302589B2 (en) * 2019-12-02 2022-04-12 Micron Technology, Inc. Electron beam probing techniques and related structures
CN111507058B (zh) * 2020-04-23 2022-07-22 福州立芯科技有限公司 一种考虑电子束雾化效应的解析布局方法
US11783110B2 (en) 2021-07-30 2023-10-10 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
US11693306B2 (en) 2021-07-30 2023-07-04 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
KR20240038001A (ko) * 2021-07-30 2024-03-22 디2에스, 인코포레이티드 기판 상에 제작될 디자인 패턴의 레티클 증강 기술을 위한 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL97022A0 (en) * 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
JPH05267133A (ja) * 1992-03-17 1993-10-15 Hitachi Ltd 斜め図形描画法
JP3085454B2 (ja) * 1997-03-13 2000-09-11 日本電気株式会社 荷電粒子線露光方法
JP3564298B2 (ja) * 1998-06-18 2004-09-08 株式会社東芝 計算機を用いたパターン評価方法およびパターン生成方法
US6262429B1 (en) * 1999-01-06 2001-07-17 Etec Systems, Inc. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
JP2000269123A (ja) * 1999-03-19 2000-09-29 Toshiba Corp 露光パターンデータの生成方法と荷電ビーム露光装置
KR100327343B1 (ko) * 2000-01-12 2002-03-06 윤종용 전자빔 리소그래피시 재산란된 전자빔에 의한 선폭변화를보정하는 방법 및 이를 기록한 기록매체
JP4522547B2 (ja) * 2000-06-21 2010-08-11 大日本印刷株式会社 微細加工のシミュレーション方法
JP4190796B2 (ja) * 2002-04-24 2008-12-03 Ｎｅｃエレクトロニクス株式会社 露光原版の作成方法
JP2006222230A (ja) * 2005-02-09 2006-08-24 Semiconductor Leading Edge Technologies Inc 近接効果補正方法
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
US20080248408A1 (en) 2005-09-07 2008-10-09 Macdonald Susan S Photomask and Method for Forming a Non-Orthogonal Feature on the Same
JP4915502B2 (ja) * 2006-03-06 2012-04-11 凸版印刷株式会社 レジストパターンシミュレーション方法
KR20080001438A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 마스크 레이아웃 제작 방법
JP4866683B2 (ja) * 2006-08-25 2012-02-01 富士通セミコンダクター株式会社 半導体デバイスの製造方法、データ作成装置、データ作成方法、およびプログラム
US7772575B2 (en) * 2006-11-21 2010-08-10 D2S, Inc. Stencil design and method for cell projection particle beam lithography
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
JP5224687B2 (ja) 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法
US7824828B2 (en) * 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
EP2321701A2 (en) * 2008-09-01 2011-05-18 D2S, Inc. Method for optical proximity correction, design and manufacturing of a reticle using character projection lithography

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