TWI525399B - 用於光學鄰近校正之方法、利用可變定形束微影術設計及製造標線片之技術 - Google Patents
用於光學鄰近校正之方法、利用可變定形束微影術設計及製造標線片之技術 Download PDFInfo
- Publication number
- TWI525399B TWI525399B TW098128034A TW98128034A TWI525399B TW I525399 B TWI525399 B TW I525399B TW 098128034 A TW098128034 A TW 098128034A TW 98128034 A TW98128034 A TW 98128034A TW I525399 B TWI525399 B TW I525399B
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- Taiwan
- Prior art keywords
- pattern
- shots
- variable shaped
- shaped beam
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 214
- 238000012937 correction Methods 0.000 title claims description 108
- 230000003287 optical effect Effects 0.000 title claims description 82
- 238000013461 design Methods 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000001459 lithography Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 110
- 239000002245 particle Substances 0.000 claims description 74
- 230000000694 effects Effects 0.000 claims description 59
- 238000004088 simulation Methods 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 47
- 238000000206 photolithography Methods 0.000 claims description 45
- 238000002360 preparation method Methods 0.000 claims description 30
- 238000005457 optimization Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 11
- 238000003776 cleavage reaction Methods 0.000 claims description 9
- 238000010276 construction Methods 0.000 claims description 9
- 238000005336 cracking Methods 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 9
- 230000007017 scission Effects 0.000 claims description 9
- 238000000889 atomisation Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000011068 loading method Methods 0.000 claims description 6
- 238000002039 particle-beam lithography Methods 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 5
- 230000009089 cytolysis Effects 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 2
- 230000004069 differentiation Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 3
- 238000011960 computer-aided design Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008450 motivation Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000002922 simulated annealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/202,366 US7759027B2 (en) | 2008-09-01 | 2008-09-01 | Method and system for design of a reticle to be manufactured using character projection lithography |
| US12/202,364 US7759026B2 (en) | 2008-09-01 | 2008-09-01 | Method and system for manufacturing a reticle using character projection particle beam lithography |
| US12/202,365 US7901845B2 (en) | 2008-09-01 | 2008-09-01 | Method for optical proximity correction of a reticle to be manufactured using character projection lithography |
| US12/269,777 US7745078B2 (en) | 2008-09-01 | 2008-11-12 | Method and system for manufacturing a reticle using character projection lithography |
| US12/473,265 US7901850B2 (en) | 2008-09-01 | 2009-05-27 | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
| US12/473,248 US7981575B2 (en) | 2008-09-01 | 2009-05-27 | Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography |
| US12/473,241 US7754401B2 (en) | 2008-09-01 | 2009-05-27 | Method for manufacturing a surface and integrated circuit using variable shaped beam lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201011478A TW201011478A (en) | 2010-03-16 |
| TWI525399B true TWI525399B (zh) | 2016-03-11 |
Family
ID=43857606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098128034A TWI525399B (zh) | 2008-09-01 | 2009-08-20 | 用於光學鄰近校正之方法、利用可變定形束微影術設計及製造標線片之技術 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2321840B1 (enExample) |
| JP (2) | JP5739808B2 (enExample) |
| KR (2) | KR20110069044A (enExample) |
| CN (1) | CN102138201B (enExample) |
| TW (1) | TWI525399B (enExample) |
| WO (1) | WO2010025032A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
| US8473875B2 (en) | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
| US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
| US20130070222A1 (en) * | 2011-09-19 | 2013-03-21 | D2S, Inc. | Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography |
| US8703389B2 (en) * | 2011-06-25 | 2014-04-22 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
| US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
| JP2013207182A (ja) * | 2012-03-29 | 2013-10-07 | Toppan Printing Co Ltd | 荷電ビーム投影露光用マスクの製造方法及び荷電ビーム投影露光用マスク |
| US9038003B2 (en) * | 2012-04-18 | 2015-05-19 | D2S, Inc. | Method and system for critical dimension uniformity using charged particle beam lithography |
| US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
| KR102154105B1 (ko) | 2012-04-18 | 2020-09-09 | 디2에스, 인코포레이티드 | 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템 |
| FR2994749B1 (fr) * | 2012-08-24 | 2015-07-24 | Commissariat Energie Atomique | Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants. |
| US8667428B1 (en) * | 2012-10-24 | 2014-03-04 | GlobalFoundries, Inc. | Methods for directed self-assembly process/proximity correction |
| US8959463B2 (en) * | 2012-11-08 | 2015-02-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
| TWI512389B (zh) * | 2013-02-22 | 2015-12-11 | Globalfoundries Us Inc | 定向自組裝製程／鄰近校正之方法 |
| TWI612373B (zh) * | 2014-07-24 | 2018-01-21 | 聯華電子股份有限公司 | 光學鄰近修正驗證系統及其驗證方法 |
| KR102395198B1 (ko) | 2015-09-22 | 2022-05-06 | 삼성전자주식회사 | 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법 |
| EP3153926B1 (en) * | 2015-10-06 | 2020-04-22 | Aselta Nanographics | A method of reducing shot count in direct writing by a particle or photon beam |
| JP6674306B2 (ja) * | 2016-03-31 | 2020-04-01 | キヤノン株式会社 | 照明装置、光学装置、インプリント装置、投影装置、及び物品の製造方法 |
| JP7034825B2 (ja) * | 2018-05-16 | 2022-03-14 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| US11302589B2 (en) * | 2019-12-02 | 2022-04-12 | Micron Technology, Inc. | Electron beam probing techniques and related structures |
| CN111507058B (zh) * | 2020-04-23 | 2022-07-22 | 福州立芯科技有限公司 | 一种考虑电子束雾化效应的解析布局方法 |
| US11783110B2 (en) | 2021-07-30 | 2023-10-10 | D2S, Inc. | Method for reticle enhancement technology of a design pattern to be manufactured on a substrate |
| US11693306B2 (en) | 2021-07-30 | 2023-07-04 | D2S, Inc. | Method for reticle enhancement technology of a design pattern to be manufactured on a substrate |
| KR20240038001A (ko) * | 2021-07-30 | 2024-03-22 | 디2에스, 인코포레이티드 | 기판 상에 제작될 디자인 패턴의 레티클 증강 기술을 위한 방법 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL97022A0 (en) * | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
| JPH05267133A (ja) * | 1992-03-17 | 1993-10-15 | Hitachi Ltd | 斜め図形描画法 |
| JP3085454B2 (ja) * | 1997-03-13 | 2000-09-11 | 日本電気株式会社 | 荷電粒子線露光方法 |
| JP3564298B2 (ja) * | 1998-06-18 | 2004-09-08 | 株式会社東芝 | 計算機を用いたパターン評価方法およびパターン生成方法 |
| US6262429B1 (en) * | 1999-01-06 | 2001-07-17 | Etec Systems, Inc. | Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field |
| JP2000269123A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Corp | 露光パターンデータの生成方法と荷電ビーム露光装置 |
| KR100327343B1 (ko) * | 2000-01-12 | 2002-03-06 | 윤종용 | 전자빔 리소그래피시 재산란된 전자빔에 의한 선폭변화를보정하는 방법 및 이를 기록한 기록매체 |
| JP4522547B2 (ja) * | 2000-06-21 | 2010-08-11 | 大日本印刷株式会社 | 微細加工のシミュレーション方法 |
| JP4190796B2 (ja) * | 2002-04-24 | 2008-12-03 | Ｎｅｃエレクトロニクス株式会社 | 露光原版の作成方法 |
| JP2006222230A (ja) * | 2005-02-09 | 2006-08-24 | Semiconductor Leading Edge Technologies Inc | 近接効果補正方法 |
| JP4701030B2 (ja) * | 2005-07-22 | 2011-06-15 | キヤノン株式会社 | 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム |
| JP4989158B2 (ja) * | 2005-09-07 | 2012-08-01 | 株式会社ニューフレアテクノロジー | 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法 |
| US20080248408A1 (en) | 2005-09-07 | 2008-10-09 | Macdonald Susan S | Photomask and Method for Forming a Non-Orthogonal Feature on the Same |
| JP4915502B2 (ja) * | 2006-03-06 | 2012-04-11 | 凸版印刷株式会社 | レジストパターンシミュレーション方法 |
| KR20080001438A (ko) * | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | 마스크 레이아웃 제작 방법 |
| JP4866683B2 (ja) * | 2006-08-25 | 2012-02-01 | 富士通セミコンダクター株式会社 | 半導体デバイスの製造方法、データ作成装置、データ作成方法、およびプログラム |
| US7772575B2 (en) * | 2006-11-21 | 2010-08-10 | D2S, Inc. | Stencil design and method for cell projection particle beam lithography |
| US7902528B2 (en) * | 2006-11-21 | 2011-03-08 | Cadence Design Systems, Inc. | Method and system for proximity effect and dose correction for a particle beam writing device |
| JP5224687B2 (ja) | 2006-12-22 | 2013-07-03 | キヤノン株式会社 | 露光条件算出プログラム及び露光条件算出方法 |
| US7824828B2 (en) * | 2007-02-22 | 2010-11-02 | Cadence Design Systems, Inc. | Method and system for improvement of dose correction for particle beam writers |
| EP2321701A2 (en) * | 2008-09-01 | 2011-05-18 | D2S, Inc. | Method for optical proximity correction, design and manufacturing of a reticle using character projection lithography |
-
2009
- 2009-08-10 KR KR1020117007654A patent/KR20110069044A/ko not_active Ceased
- 2009-08-10 KR KR1020147036547A patent/KR101688506B1/ko active Active
- 2009-08-10 CN CN200980134188.6A patent/CN102138201B/zh active Active
- 2009-08-10 JP JP2011525073A patent/JP5739808B2/ja active Active
- 2009-08-10 EP EP09810441.7A patent/EP2321840B1/en active Active
- 2009-08-10 WO PCT/US2009/053328 patent/WO2010025032A2/en not_active Ceased
- 2009-08-20 TW TW098128034A patent/TWI525399B/zh active
-
2014
- 2014-12-09 JP JP2014248818A patent/JP5970052B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101688506B1 (ko) | 2016-12-21 |
| EP2321840B1 (en) | 2017-05-03 |
| JP5739808B2 (ja) | 2015-06-24 |
| EP2321840A2 (en) | 2011-05-18 |
| CN102138201B (zh) | 2014-12-31 |
| TW201011478A (en) | 2010-03-16 |
| KR20110069044A (ko) | 2011-06-22 |
| JP2015096958A (ja) | 2015-05-21 |
| WO2010025032A2 (en) | 2010-03-04 |
| EP2321840A4 (en) | 2015-12-16 |
| JP2012501474A (ja) | 2012-01-19 |
| CN102138201A (zh) | 2011-07-27 |
| KR20150008928A (ko) | 2015-01-23 |
| JP5970052B2 (ja) | 2016-08-17 |
| WO2010025032A3 (en) | 2010-06-17 |
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