CN102138201B - 用可变形束光刻的光学邻近校正、设计和制造光刻板方法 - Google Patents

用可变形束光刻的光学邻近校正、设计和制造光刻板方法 Download PDF

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Publication number
CN102138201B
CN102138201B CN200980134188.6A CN200980134188A CN102138201B CN 102138201 B CN102138201 B CN 102138201B CN 200980134188 A CN200980134188 A CN 200980134188A CN 102138201 B CN102138201 B CN 102138201B
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China
Prior art keywords
pattern
shots
deformable beam
beam shots
substrate
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Active
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CN200980134188.6A
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English (en)
Chinese (zh)
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CN102138201A (zh
Inventor
藤村晶
兰斯·格兰瑟
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D2S Inc
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D2S Inc
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Filing date
Publication date
Priority claimed from US12/202,364 external-priority patent/US7759026B2/en
Priority claimed from US12/202,365 external-priority patent/US7901845B2/en
Priority claimed from US12/202,366 external-priority patent/US7759027B2/en
Priority claimed from US12/473,248 external-priority patent/US7981575B2/en
Priority claimed from US12/473,265 external-priority patent/US7901850B2/en
Priority claimed from US12/473,241 external-priority patent/US7754401B2/en
Application filed by D2S Inc filed Critical D2S Inc
Publication of CN102138201A publication Critical patent/CN102138201A/zh
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Publication of CN102138201B publication Critical patent/CN102138201B/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN200980134188.6A 2008-09-01 2009-08-10 用可变形束光刻的光学邻近校正、设计和制造光刻板方法 Active CN102138201B (zh)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US12/202,364 US7759026B2 (en) 2008-09-01 2008-09-01 Method and system for manufacturing a reticle using character projection particle beam lithography
US12/202,364 2008-09-01
US12/202,365 2008-09-01
US12/202,366 2008-09-01
US12/202,365 US7901845B2 (en) 2008-09-01 2008-09-01 Method for optical proximity correction of a reticle to be manufactured using character projection lithography
US12/202,366 US7759027B2 (en) 2008-09-01 2008-09-01 Method and system for design of a reticle to be manufactured using character projection lithography
US12/269,777 2008-11-12
US12/269,777 US7745078B2 (en) 2008-09-01 2008-11-12 Method and system for manufacturing a reticle using character projection lithography
US12/473,241 2009-05-27
US12/473,248 2009-05-27
US12/473,248 US7981575B2 (en) 2008-09-01 2009-05-27 Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography
US12/473,265 US7901850B2 (en) 2008-09-01 2009-05-27 Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US12/473,265 2009-05-27
US12/473,241 US7754401B2 (en) 2008-09-01 2009-05-27 Method for manufacturing a surface and integrated circuit using variable shaped beam lithography
PCT/US2009/053328 WO2010025032A2 (en) 2008-09-01 2009-08-10 Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography

Publications (2)

Publication Number Publication Date
CN102138201A CN102138201A (zh) 2011-07-27
CN102138201B true CN102138201B (zh) 2014-12-31

Family

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Family Applications (1)

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CN200980134188.6A Active CN102138201B (zh) 2008-09-01 2009-08-10 用可变形束光刻的光学邻近校正、设计和制造光刻板方法

Country Status (6)

Country Link
EP (1) EP2321840B1 (enExample)
JP (2) JP5739808B2 (enExample)
KR (2) KR20110069044A (enExample)
CN (1) CN102138201B (enExample)
TW (1) TWI525399B (enExample)
WO (1) WO2010025032A2 (enExample)

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US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US20130070222A1 (en) * 2011-09-19 2013-03-21 D2S, Inc. Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography
US8703389B2 (en) * 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
JP2013207182A (ja) * 2012-03-29 2013-10-07 Toppan Printing Co Ltd 荷電ビーム投影露光用マスクの製造方法及び荷電ビーム投影露光用マスク
US9038003B2 (en) * 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
FR2994749B1 (fr) * 2012-08-24 2015-07-24 Commissariat Energie Atomique Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants.
US8667428B1 (en) * 2012-10-24 2014-03-04 GlobalFoundries, Inc. Methods for directed self-assembly process/proximity correction
US8959463B2 (en) * 2012-11-08 2015-02-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
TWI512389B (zh) * 2013-02-22 2015-12-11 Globalfoundries Us Inc 定向自組裝製程／鄰近校正之方法
TWI612373B (zh) * 2014-07-24 2018-01-21 聯華電子股份有限公司 光學鄰近修正驗證系統及其驗證方法
KR102395198B1 (ko) 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
EP3153926B1 (en) * 2015-10-06 2020-04-22 Aselta Nanographics A method of reducing shot count in direct writing by a particle or photon beam
JP6674306B2 (ja) * 2016-03-31 2020-04-01 キヤノン株式会社 照明装置、光学装置、インプリント装置、投影装置、及び物品の製造方法
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US11302589B2 (en) * 2019-12-02 2022-04-12 Micron Technology, Inc. Electron beam probing techniques and related structures
CN111507058B (zh) * 2020-04-23 2022-07-22 福州立芯科技有限公司 一种考虑电子束雾化效应的解析布局方法
US11783110B2 (en) 2021-07-30 2023-10-10 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
US11693306B2 (en) 2021-07-30 2023-07-04 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
KR20240038001A (ko) * 2021-07-30 2024-03-22 디2에스, 인코포레이티드 기판 상에 제작될 디자인 패턴의 레티클 증강 기술을 위한 방법

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Also Published As

Publication number Publication date
KR101688506B1 (ko) 2016-12-21
EP2321840B1 (en) 2017-05-03
JP5739808B2 (ja) 2015-06-24
EP2321840A2 (en) 2011-05-18
TWI525399B (zh) 2016-03-11
TW201011478A (en) 2010-03-16
KR20110069044A (ko) 2011-06-22
JP2015096958A (ja) 2015-05-21
WO2010025032A2 (en) 2010-03-04
EP2321840A4 (en) 2015-12-16
JP2012501474A (ja) 2012-01-19
CN102138201A (zh) 2011-07-27
KR20150008928A (ko) 2015-01-23
JP5970052B2 (ja) 2016-08-17
WO2010025032A3 (en) 2010-06-17

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