KR20110069044A - 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법 - Google Patents

가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법 Download PDF

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Publication number
KR20110069044A
KR20110069044A KR1020117007654A KR20117007654A KR20110069044A KR 20110069044 A KR20110069044 A KR 20110069044A KR 1020117007654 A KR1020117007654 A KR 1020117007654A KR 20117007654 A KR20117007654 A KR 20117007654A KR 20110069044 A KR20110069044 A KR 20110069044A
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KR
South Korea
Prior art keywords
pattern
shots
vsb
glyphs
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020117007654A
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English (en)
Korean (ko)
Inventor
아키라 후지무라
랜스 글레서
Original Assignee
디2에스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/202,364 external-priority patent/US7759026B2/en
Priority claimed from US12/202,365 external-priority patent/US7901845B2/en
Priority claimed from US12/202,366 external-priority patent/US7759027B2/en
Priority claimed from US12/473,248 external-priority patent/US7981575B2/en
Priority claimed from US12/473,265 external-priority patent/US7901850B2/en
Priority claimed from US12/473,241 external-priority patent/US7754401B2/en
Application filed by 디2에스, 인코포레이티드 filed Critical 디2에스, 인코포레이티드
Publication of KR20110069044A publication Critical patent/KR20110069044A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020117007654A 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법 Ceased KR20110069044A (ko)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US12/202,364 US7759026B2 (en) 2008-09-01 2008-09-01 Method and system for manufacturing a reticle using character projection particle beam lithography
US12/202,365 2008-09-01
US12/202,364 2008-09-01
US12/202,365 US7901845B2 (en) 2008-09-01 2008-09-01 Method for optical proximity correction of a reticle to be manufactured using character projection lithography
US12/202,366 US7759027B2 (en) 2008-09-01 2008-09-01 Method and system for design of a reticle to be manufactured using character projection lithography
US12/202,366 2008-09-01
US12/269,777 2008-11-12
US12/269,777 US7745078B2 (en) 2008-09-01 2008-11-12 Method and system for manufacturing a reticle using character projection lithography
US12/473,241 2009-05-27
US12/473,248 US7981575B2 (en) 2008-09-01 2009-05-27 Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography
US12/473,248 2009-05-27
US12/473,265 US7901850B2 (en) 2008-09-01 2009-05-27 Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US12/473,265 2009-05-27
US12/473,241 US7754401B2 (en) 2008-09-01 2009-05-27 Method for manufacturing a surface and integrated circuit using variable shaped beam lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147036547A Division KR101688506B1 (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법

Publications (1)

Publication Number Publication Date
KR20110069044A true KR20110069044A (ko) 2011-06-22

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KR1020117007654A Ceased KR20110069044A (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법
KR1020147036547A Active KR101688506B1 (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법

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Country Status (6)

Country Link
EP (1) EP2321840B1 (enExample)
JP (2) JP5739808B2 (enExample)
KR (2) KR20110069044A (enExample)
CN (1) CN102138201B (enExample)
TW (1) TWI525399B (enExample)
WO (1) WO2010025032A2 (enExample)

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US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

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US20130070222A1 (en) * 2011-09-19 2013-03-21 D2S, Inc. Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography
US8703389B2 (en) * 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
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JP6674306B2 (ja) * 2016-03-31 2020-04-01 キヤノン株式会社 照明装置、光学装置、インプリント装置、投影装置、及び物品の製造方法
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Publication number Priority date Publication date Assignee Title
US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

Also Published As

Publication number Publication date
KR101688506B1 (ko) 2016-12-21
EP2321840B1 (en) 2017-05-03
JP5739808B2 (ja) 2015-06-24
EP2321840A2 (en) 2011-05-18
TWI525399B (zh) 2016-03-11
CN102138201B (zh) 2014-12-31
TW201011478A (en) 2010-03-16
JP2015096958A (ja) 2015-05-21
WO2010025032A2 (en) 2010-03-04
EP2321840A4 (en) 2015-12-16
JP2012501474A (ja) 2012-01-19
CN102138201A (zh) 2011-07-27
KR20150008928A (ko) 2015-01-23
JP5970052B2 (ja) 2016-08-17
WO2010025032A3 (en) 2010-06-17

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