JP2012500472A - 光起電力デバイス形成用組成物および形成方法 - Google Patents

光起電力デバイス形成用組成物および形成方法 Download PDF

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JP2012500472A
JP2012500472A JP2011523088A JP2011523088A JP2012500472A JP 2012500472 A JP2012500472 A JP 2012500472A JP 2011523088 A JP2011523088 A JP 2011523088A JP 2011523088 A JP2011523088 A JP 2011523088A JP 2012500472 A JP2012500472 A JP 2012500472A
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metal
reactive metal
reactive
contact
layer
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JP2012500472A5 (enExample
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ボーランド ウィリアム
マリア ジョン−ポール
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EIDP Inc
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EI Du Pont de Nemours and Co
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011523088A 2008-08-13 2009-08-11 光起電力デバイス形成用組成物および形成方法 Pending JP2012500472A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8850408P 2008-08-13 2008-08-13
US61/088,504 2008-08-13
PCT/US2009/053375 WO2010019552A2 (en) 2008-08-13 2009-08-11 Compositions and processes for forming photovoltaic devices

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JP2012500472A true JP2012500472A (ja) 2012-01-05
JP2012500472A5 JP2012500472A5 (enExample) 2012-09-06

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US (2) US8294024B2 (enExample)
EP (1) EP2324511A2 (enExample)
JP (1) JP2012500472A (enExample)
KR (1) KR20110050512A (enExample)
CN (1) CN102119445B (enExample)
TW (1) TW201019488A (enExample)
WO (1) WO2010019552A2 (enExample)

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US8840701B2 (en) * 2008-08-13 2014-09-23 E I Du Pont De Nemours And Company Multi-element metal powders for silicon solar cells
US8294024B2 (en) 2008-08-13 2012-10-23 E I Du Pont De Nemours And Company Processes for forming photovoltaic devices
WO2013151675A1 (en) * 2012-04-04 2013-10-10 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US9425393B2 (en) 2008-12-19 2016-08-23 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US8710355B2 (en) * 2008-12-22 2014-04-29 E I Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
WO2012129184A1 (en) * 2011-03-18 2012-09-27 Crystal Solar, Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
KR102011477B1 (ko) * 2011-03-29 2019-08-16 썬 케미칼 코포레이션 왁스 요변체를 함유하는 고-종횡비 스크린 인쇄성 후막 페이스트 조성물
US20120285517A1 (en) * 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
CN103022163A (zh) * 2011-09-22 2013-04-03 比亚迪股份有限公司 一种晶硅太阳能电池及其制备方法
ZA201208283B (en) * 2011-11-04 2013-07-31 Heraeus Precious Metals North America Conshohocken Llc Organic vehicle for electroconductive paste
NL2009382C2 (en) * 2012-08-29 2014-03-18 M4Si B V Method for manufacturing a solar cell and solar cell obtained therewith.
JP5584846B1 (ja) * 2012-12-20 2014-09-03 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
CN103311367A (zh) * 2013-05-31 2013-09-18 浙江正泰太阳能科技有限公司 一种晶体硅太阳能电池的制备方法
KR102018649B1 (ko) * 2013-06-21 2019-09-05 엘지전자 주식회사 태양 전지
US9917158B2 (en) 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
CN103943167B (zh) * 2014-04-18 2016-06-08 西安交通大学 一种Ag(V,Nb)/稀土晶体硅太阳电池合金浆料及其制备方法
CN105097503B (zh) * 2014-05-13 2017-11-17 复旦大学 一种调节硅化钛/硅肖特基接触势垒的方法
US10340353B2 (en) * 2014-08-01 2019-07-02 The United States Of America, As Represented By The Secretary Of The Navy Epitaxial metallic transition metal nitride layers for compound semiconductor devices
US10224481B2 (en) 2014-10-07 2019-03-05 The Trustees Of The University Of Pennsylvania Mechanical forming of resistive memory devices
CN113629155B (zh) * 2021-08-06 2023-03-24 常州时创能源股份有限公司 一种晶硅太阳能电池
CN117727491B (zh) * 2024-01-31 2024-06-18 江苏富乐华功率半导体研究院有限公司 一种用于氮化硅共烧的电子浆料及其制备方法
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