JP2012500472A - 光起電力デバイス形成用組成物および形成方法 - Google Patents

光起電力デバイス形成用組成物および形成方法 Download PDF

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Publication number
JP2012500472A
JP2012500472A JP2011523088A JP2011523088A JP2012500472A JP 2012500472 A JP2012500472 A JP 2012500472A JP 2011523088 A JP2011523088 A JP 2011523088A JP 2011523088 A JP2011523088 A JP 2011523088A JP 2012500472 A JP2012500472 A JP 2012500472A
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metal
reactive metal
reactive
contact
layer
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Japanese (ja)
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JP2012500472A5 (enExample
Inventor
ボーランド ウィリアム
マリア ジョン−ポール
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011523088A 2008-08-13 2009-08-11 光起電力デバイス形成用組成物および形成方法 Pending JP2012500472A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8850408P 2008-08-13 2008-08-13
US61/088,504 2008-08-13
PCT/US2009/053375 WO2010019552A2 (en) 2008-08-13 2009-08-11 Compositions and processes for forming photovoltaic devices

Publications (2)

Publication Number Publication Date
JP2012500472A true JP2012500472A (ja) 2012-01-05
JP2012500472A5 JP2012500472A5 (enExample) 2012-09-06

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JP2011523088A Pending JP2012500472A (ja) 2008-08-13 2009-08-11 光起電力デバイス形成用組成物および形成方法

Country Status (7)

Country Link
US (2) US8294024B2 (enExample)
EP (1) EP2324511A2 (enExample)
JP (1) JP2012500472A (enExample)
KR (1) KR20110050512A (enExample)
CN (1) CN102119445B (enExample)
TW (1) TW201019488A (enExample)
WO (1) WO2010019552A2 (enExample)

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TWI438923B (zh) * 2008-07-30 2014-05-21 晶元光電股份有限公司 光電元件製造方法
US8840701B2 (en) * 2008-08-13 2014-09-23 E I Du Pont De Nemours And Company Multi-element metal powders for silicon solar cells
US8294024B2 (en) 2008-08-13 2012-10-23 E I Du Pont De Nemours And Company Processes for forming photovoltaic devices
US9425393B2 (en) 2008-12-19 2016-08-23 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
WO2013151675A1 (en) * 2012-04-04 2013-10-10 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US8710355B2 (en) * 2008-12-22 2014-04-29 E I Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
US8609451B2 (en) * 2011-03-18 2013-12-17 Crystal Solar Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
JP5934336B2 (ja) * 2011-03-29 2016-06-15 サン ケミカル コーポレイション ワックスチクソトロープ剤を含有する高いアスペクト比のスクリーン印刷可能な厚膜ペースト組成物
US20120285517A1 (en) * 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
CN103022163A (zh) * 2011-09-22 2013-04-03 比亚迪股份有限公司 一种晶硅太阳能电池及其制备方法
ZA201208283B (en) * 2011-11-04 2013-07-31 Heraeus Precious Metals North America Conshohocken Llc Organic vehicle for electroconductive paste
NL2009382C2 (en) * 2012-08-29 2014-03-18 M4Si B V Method for manufacturing a solar cell and solar cell obtained therewith.
US9680037B2 (en) * 2012-12-20 2017-06-13 Kaneka Corporation Solar cell and method of manufacturing same, and solar cell module
CN103311367A (zh) * 2013-05-31 2013-09-18 浙江正泰太阳能科技有限公司 一种晶体硅太阳能电池的制备方法
KR102018649B1 (ko) * 2013-06-21 2019-09-05 엘지전자 주식회사 태양 전지
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US9917158B2 (en) 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
CN103943167B (zh) * 2014-04-18 2016-06-08 西安交通大学 一种Ag(V,Nb)/稀土晶体硅太阳电池合金浆料及其制备方法
CN105097503B (zh) * 2014-05-13 2017-11-17 复旦大学 一种调节硅化钛/硅肖特基接触势垒的方法
KR20170040269A (ko) * 2014-08-01 2017-04-12 더 거번먼트 오브 더 유나이티드 스테이츠 오브 아메리카 에즈 레프리젠티드 바이 더 세크러테리 오브 더 네이비 화합물 반도체 장치를 위한 에피택셜 금속성 전이 금속 질화물 레이어
US10224481B2 (en) 2014-10-07 2019-03-05 The Trustees Of The University Of Pennsylvania Mechanical forming of resistive memory devices
CN113629155B (zh) * 2021-08-06 2023-03-24 常州时创能源股份有限公司 一种晶硅太阳能电池
CN117727491B (zh) * 2024-01-31 2024-06-18 江苏富乐华功率半导体研究院有限公司 一种用于氮化硅共烧的电子浆料及其制备方法
CN118946178A (zh) * 2024-08-22 2024-11-12 滁州捷泰新能源科技有限公司 一种钙钛矿/晶体硅叠层电池及其制备方法

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US5252518A (en) * 1992-03-03 1993-10-12 Micron Technology, Inc. Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane
JP2000049368A (ja) * 1998-07-29 2000-02-18 Kyocera Corp 太陽電池素子の製造方法
JP2000114559A (ja) * 1998-09-30 2000-04-21 Kyocera Corp 太陽電池素子の製造方法
JP2001313400A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 太陽電池素子の形成方法
EP1386708A2 (en) * 1997-02-24 2004-02-04 Superior MicroPowders LLC Particulate products made by an aerosol method
US20040231758A1 (en) * 1997-02-24 2004-11-25 Hampden-Smith Mark J. Silver-containing particles, method and apparatus of manufacture, silver-containing devices made therefrom

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US5252518A (en) * 1992-03-03 1993-10-12 Micron Technology, Inc. Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane
EP1386708A2 (en) * 1997-02-24 2004-02-04 Superior MicroPowders LLC Particulate products made by an aerosol method
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Also Published As

Publication number Publication date
WO2010019552A3 (en) 2010-11-18
CN102119445B (zh) 2013-07-24
US20100037942A1 (en) 2010-02-18
WO2010019552A2 (en) 2010-02-18
EP2324511A2 (en) 2011-05-25
TW201019488A (en) 2010-05-16
US20130000709A1 (en) 2013-01-03
US8294024B2 (en) 2012-10-23
KR20110050512A (ko) 2011-05-13
CN102119445A (zh) 2011-07-06

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