JP2012500472A5 - - Google Patents
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- Publication number
- JP2012500472A5 JP2012500472A5 JP2011523088A JP2011523088A JP2012500472A5 JP 2012500472 A5 JP2012500472 A5 JP 2012500472A5 JP 2011523088 A JP2011523088 A JP 2011523088A JP 2011523088 A JP2011523088 A JP 2011523088A JP 2012500472 A5 JP2012500472 A5 JP 2012500472A5
- Authority
- JP
- Japan
- Prior art keywords
- reactive metal
- metal
- contact
- reactive
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 95
- 239000002184 metal Substances 0.000 claims description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052790 beryllium Inorganic materials 0.000 claims description 7
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 238000007736 thin film deposition technique Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 230000009257 reactivity Effects 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8850408P | 2008-08-13 | 2008-08-13 | |
| US61/088,504 | 2008-08-13 | ||
| PCT/US2009/053375 WO2010019552A2 (en) | 2008-08-13 | 2009-08-11 | Compositions and processes for forming photovoltaic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012500472A JP2012500472A (ja) | 2012-01-05 |
| JP2012500472A5 true JP2012500472A5 (enExample) | 2012-09-06 |
Family
ID=41669606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011523088A Pending JP2012500472A (ja) | 2008-08-13 | 2009-08-11 | 光起電力デバイス形成用組成物および形成方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8294024B2 (enExample) |
| EP (1) | EP2324511A2 (enExample) |
| JP (1) | JP2012500472A (enExample) |
| KR (1) | KR20110050512A (enExample) |
| CN (1) | CN102119445B (enExample) |
| TW (1) | TW201019488A (enExample) |
| WO (1) | WO2010019552A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI438923B (zh) * | 2008-07-30 | 2014-05-21 | Epistar Corp | 光電元件製造方法 |
| US8840701B2 (en) * | 2008-08-13 | 2014-09-23 | E I Du Pont De Nemours And Company | Multi-element metal powders for silicon solar cells |
| US8294024B2 (en) | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
| WO2013151675A1 (en) * | 2012-04-04 | 2013-10-10 | The Trustees Of The University Of Pennsylvania | Non-volatile resistance-switching thin film devices |
| US9425393B2 (en) | 2008-12-19 | 2016-08-23 | The Trustees Of The University Of Pennsylvania | Non-volatile resistance-switching thin film devices |
| US8710355B2 (en) * | 2008-12-22 | 2014-04-29 | E I Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
| WO2012129184A1 (en) * | 2011-03-18 | 2012-09-27 | Crystal Solar, Inc. | Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells |
| KR102011477B1 (ko) * | 2011-03-29 | 2019-08-16 | 썬 케미칼 코포레이션 | 왁스 요변체를 함유하는 고-종횡비 스크린 인쇄성 후막 페이스트 조성물 |
| US20120285517A1 (en) * | 2011-05-09 | 2012-11-15 | International Business Machines Corporation | Schottky barrier solar cells with high and low work function metal contacts |
| CN103022163A (zh) * | 2011-09-22 | 2013-04-03 | 比亚迪股份有限公司 | 一种晶硅太阳能电池及其制备方法 |
| ZA201208283B (en) * | 2011-11-04 | 2013-07-31 | Heraeus Precious Metals North America Conshohocken Llc | Organic vehicle for electroconductive paste |
| NL2009382C2 (en) * | 2012-08-29 | 2014-03-18 | M4Si B V | Method for manufacturing a solar cell and solar cell obtained therewith. |
| JP5584846B1 (ja) * | 2012-12-20 | 2014-09-03 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
| CN103311367A (zh) * | 2013-05-31 | 2013-09-18 | 浙江正泰太阳能科技有限公司 | 一种晶体硅太阳能电池的制备方法 |
| KR102018649B1 (ko) * | 2013-06-21 | 2019-09-05 | 엘지전자 주식회사 | 태양 전지 |
| US9917158B2 (en) | 2013-07-30 | 2018-03-13 | Samsung Electronics Co., Ltd. | Device contact structures including heterojunctions for low contact resistance |
| US9685509B2 (en) | 2013-07-30 | 2017-06-20 | Samsung Electronics Co., Ltd. | Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions |
| CN103545405B (zh) * | 2013-11-11 | 2016-03-30 | 天津三安光电有限公司 | 氮化物发光二极管 |
| CN103943167B (zh) * | 2014-04-18 | 2016-06-08 | 西安交通大学 | 一种Ag(V,Nb)/稀土晶体硅太阳电池合金浆料及其制备方法 |
| CN105097503B (zh) * | 2014-05-13 | 2017-11-17 | 复旦大学 | 一种调节硅化钛/硅肖特基接触势垒的方法 |
| US10340353B2 (en) * | 2014-08-01 | 2019-07-02 | The United States Of America, As Represented By The Secretary Of The Navy | Epitaxial metallic transition metal nitride layers for compound semiconductor devices |
| US10224481B2 (en) | 2014-10-07 | 2019-03-05 | The Trustees Of The University Of Pennsylvania | Mechanical forming of resistive memory devices |
| CN113629155B (zh) * | 2021-08-06 | 2023-03-24 | 常州时创能源股份有限公司 | 一种晶硅太阳能电池 |
| CN117727491B (zh) * | 2024-01-31 | 2024-06-18 | 江苏富乐华功率半导体研究院有限公司 | 一种用于氮化硅共烧的电子浆料及其制备方法 |
| CN118946178A (zh) * | 2024-08-22 | 2024-11-12 | 滁州捷泰新能源科技有限公司 | 一种钙钛矿/晶体硅叠层电池及其制备方法 |
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| JP5530920B2 (ja) * | 2007-04-25 | 2014-06-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 |
| KR20100068274A (ko) * | 2007-10-09 | 2010-06-22 | 나노마스 테크놀러지스, 인코포레이티드 | 전도성 나노입자 잉크 및 페이스트, 및 이를 이용한 응용 |
| US7897434B2 (en) * | 2008-08-12 | 2011-03-01 | International Business Machines Corporation | Methods of fabricating solar cell chips |
| US20100037941A1 (en) * | 2008-08-13 | 2010-02-18 | E. I. Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
| US8294024B2 (en) | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
| TWI366919B (en) | 2008-09-19 | 2012-06-21 | Gintech Energy Corp | Structure of solar cell and its production method |
-
2009
- 2009-08-05 US US12/536,238 patent/US8294024B2/en not_active Expired - Fee Related
- 2009-08-11 KR KR20117005773A patent/KR20110050512A/ko not_active Abandoned
- 2009-08-11 WO PCT/US2009/053375 patent/WO2010019552A2/en not_active Ceased
- 2009-08-11 JP JP2011523088A patent/JP2012500472A/ja active Pending
- 2009-08-11 CN CN2009801316691A patent/CN102119445B/zh not_active Expired - Fee Related
- 2009-08-11 EP EP20090791368 patent/EP2324511A2/en not_active Withdrawn
- 2009-08-13 TW TW98127306A patent/TW201019488A/zh unknown
-
2012
- 2012-09-14 US US13/615,767 patent/US20130000709A1/en not_active Abandoned
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