JP2012513676A5 - - Google Patents
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- Publication number
- JP2012513676A5 JP2012513676A5 JP2011542528A JP2011542528A JP2012513676A5 JP 2012513676 A5 JP2012513676 A5 JP 2012513676A5 JP 2011542528 A JP2011542528 A JP 2011542528A JP 2011542528 A JP2011542528 A JP 2011542528A JP 2012513676 A5 JP2012513676 A5 JP 2012513676A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- contact
- exchange
- layer
- exchange metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims description 101
- 239000002184 metal Substances 0.000 claims description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 150000002739 metals Chemical class 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910017052 cobalt Inorganic materials 0.000 claims description 12
- 239000010941 cobalt Substances 0.000 claims description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052790 beryllium Inorganic materials 0.000 claims description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 239000011572 manganese Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13975808P | 2008-12-22 | 2008-12-22 | |
| US61/139,758 | 2008-12-22 | ||
| PCT/US2009/068914 WO2010075247A2 (en) | 2008-12-22 | 2009-12-21 | Compositions and processes for forming photovoltaic devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012513676A JP2012513676A (ja) | 2012-06-14 |
| JP2012513676A5 true JP2012513676A5 (enExample) | 2013-02-14 |
| JP5694949B2 JP5694949B2 (ja) | 2015-04-01 |
Family
ID=42264300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011542528A Expired - Fee Related JP5694949B2 (ja) | 2008-12-22 | 2009-12-21 | 光起電力素子を形成するための組成物と方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8710355B2 (enExample) |
| EP (1) | EP2380204A2 (enExample) |
| JP (1) | JP5694949B2 (enExample) |
| KR (1) | KR20110101218A (enExample) |
| CN (1) | CN102301485A (enExample) |
| TW (1) | TW201034227A (enExample) |
| WO (1) | WO2010075247A2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2562792A4 (en) * | 2010-04-23 | 2014-09-24 | Hitachi Chemical Co Ltd | COMPOSITION FOR FORMING AN N-LEADING DIFFUSION LAYER, METHOD FOR PRODUCING THE N-LEADING DIFFUSION LAYER, AND METHOD FOR PRODUCING A SOLAR CELL ELEMENT |
| KR101868163B1 (ko) * | 2010-04-23 | 2018-06-15 | 히타치가세이가부시끼가이샤 | ｐ 형 확산층 형성 조성물, ｐ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법 |
| KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| US8378490B2 (en) * | 2011-03-15 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor apparatus including a metal alloy between a first contact and a second contact |
| JP5725180B2 (ja) * | 2011-07-25 | 2015-05-27 | 日立化成株式会社 | 素子および太陽電池 |
| US8901414B2 (en) * | 2011-09-14 | 2014-12-02 | International Business Machines Corporation | Photovoltaic cells with copper grid |
| US20130334501A1 (en) * | 2011-09-15 | 2013-12-19 | The Regents Of The University Of California | Field-Effect P-N Junction |
| TWI464784B (zh) * | 2011-10-28 | 2014-12-11 | Iner Aec Executive Yuan | 一種製作微晶矽薄膜的方法 |
| KR101149891B1 (ko) * | 2011-12-09 | 2012-06-11 | 한화케미칼 주식회사 | 태양전지 및 이의 제조방법 |
| US9024367B2 (en) | 2012-02-24 | 2015-05-05 | The Regents Of The University Of California | Field-effect P-N junction |
| EP2634816A1 (en) * | 2012-02-28 | 2013-09-04 | PVG Solutions Inc. | Solar battery cell and method of manufacturing the same |
| EP2839511A4 (en) | 2012-04-18 | 2015-12-02 | Heraeus Precious Metals North America Conshohocken Llc | SOLAR CELL CONTACTS WITH INTERMETALLIC NICKEL COMPOSITIONS |
| CN104269448B (zh) * | 2012-06-11 | 2017-02-01 | 苏州晶银新材料股份有限公司 | 光伏电池用正面电极栅线 |
| CN104246910B (zh) * | 2012-10-30 | 2016-06-08 | 化研科技株式会社 | 导电性糊料和芯片焊接方法 |
| KR101396444B1 (ko) * | 2013-05-06 | 2014-05-22 | 한화케미칼 주식회사 | 태양전지의 전극의 제조방법 및 이를 이용한 태양전지 |
| KR101614186B1 (ko) * | 2013-05-20 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| CN103383916B (zh) * | 2013-08-08 | 2016-03-02 | 扬州晶新微电子有限公司 | 可用于共晶焊的p型硅器件芯片背面金属化方法 |
| DE102013016331A1 (de) * | 2013-10-05 | 2015-04-09 | Micronas Gmbh | Schichtsystem |
| US10000645B2 (en) | 2015-11-24 | 2018-06-19 | PLANT PV, Inc. | Methods of forming solar cells with fired multilayer film stacks |
| JP6656698B1 (ja) * | 2019-05-23 | 2020-03-04 | 国立大学法人徳島大学 | 医療用マイクロ波給電システム、医療用受電回路、ショットキーバリアダイオード及び医療用マイクロ波給電方法 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381182A (en) | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
| US3968272A (en) | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
| US4153907A (en) | 1977-05-17 | 1979-05-08 | Vactec, Incorporated | Photovoltaic cell with junction-free essentially-linear connections to its contacts |
| US4105471A (en) | 1977-06-08 | 1978-08-08 | Arco Solar, Inc. | Solar cell with improved printed contact and method of making the same |
| US4278704A (en) | 1980-01-30 | 1981-07-14 | Rca Corporation | Method for forming an electrical contact to a solar cell |
| US4394673A (en) | 1980-09-29 | 1983-07-19 | International Business Machines Corporation | Rare earth silicide Schottky barriers |
| JPS5933868A (ja) | 1982-08-20 | 1984-02-23 | Hitachi Ltd | 半導体装置用電極材料 |
| FR2549290B1 (fr) | 1983-07-13 | 1986-10-10 | Photowatt Int | Encre conductrice pour prise de contact par serigraphie sur du silicium semi-conducteur, procede de realisation d'un contact par serigraphie a l'aide d'une telle encre, et cellule photovoltaique munie d'un tel contact |
| JPS60140880A (ja) | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
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| GB8802079D0 (en) | 1988-01-30 | 1988-02-24 | British Petroleum Co Plc | Producing semiconductor layers |
| US5698451A (en) | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
| US5118362A (en) | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JPH06140279A (ja) | 1992-09-11 | 1994-05-20 | Murata Mfg Co Ltd | 積層セラミック電子部品の焼成方法 |
| TW261554B (enExample) | 1992-10-05 | 1995-11-01 | Du Pont | |
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| EP1386708B1 (en) * | 1997-02-24 | 2014-06-18 | Cabot Corporation | Particulate products made by an aerosol method |
| CA2280865C (en) | 1997-02-24 | 2008-08-12 | Superior Micropowders Llc | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
| JP3842449B2 (ja) * | 1998-09-30 | 2006-11-08 | 京セラ株式会社 | 太陽電池素子の製造方法 |
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| KR20080075156A (ko) | 2005-11-07 | 2008-08-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 광전지 콘택 및 배선 형성 방법 |
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| US8575474B2 (en) | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
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| JP5530920B2 (ja) | 2007-04-25 | 2014-06-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 |
| KR20100068274A (ko) | 2007-10-09 | 2010-06-22 | 나노마스 테크놀러지스, 인코포레이티드 | 전도성 나노입자 잉크 및 페이스트, 및 이를 이용한 응용 |
| JP2010020231A (ja) * | 2008-07-14 | 2010-01-28 | Seiko Epson Corp | 電気泳動表示装置、電子機器 |
| US7897434B2 (en) * | 2008-08-12 | 2011-03-01 | International Business Machines Corporation | Methods of fabricating solar cell chips |
| US20100037941A1 (en) | 2008-08-13 | 2010-02-18 | E. I. Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
| US8294024B2 (en) * | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
| TWI366919B (en) | 2008-09-19 | 2012-06-21 | Gintech Energy Corp | Structure of solar cell and its production method |
| US8850408B2 (en) | 2011-08-10 | 2014-09-30 | Nintendo Of America, Inc. | Methods and/or systems for determining a series of return callstacks |
-
2009
- 2009-11-13 US US12/617,929 patent/US8710355B2/en not_active Expired - Fee Related
- 2009-11-23 TW TW098139742A patent/TW201034227A/zh unknown
- 2009-12-21 CN CN2009801529984A patent/CN102301485A/zh active Pending
- 2009-12-21 KR KR1020117017087A patent/KR20110101218A/ko not_active Abandoned
- 2009-12-21 EP EP09795655A patent/EP2380204A2/en not_active Withdrawn
- 2009-12-21 JP JP2011542528A patent/JP5694949B2/ja not_active Expired - Fee Related
- 2009-12-21 WO PCT/US2009/068914 patent/WO2010075247A2/en not_active Ceased
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