TW201034227A - Compositions and processes for forming photovoltaic devices - Google Patents
Compositions and processes for forming photovoltaic devices Download PDFInfo
- Publication number
- TW201034227A TW201034227A TW098139742A TW98139742A TW201034227A TW 201034227 A TW201034227 A TW 201034227A TW 098139742 A TW098139742 A TW 098139742A TW 98139742 A TW98139742 A TW 98139742A TW 201034227 A TW201034227 A TW 201034227A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- exchange
- layer
- contact
- exchange metal
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000008569 process Effects 0.000 title description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 224
- 239000002184 metal Substances 0.000 claims abstract description 224
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052709 silver Inorganic materials 0.000 claims abstract description 50
- 239000004332 silver Substances 0.000 claims abstract description 50
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 44
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 37
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 25
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 19
- 239000010941 cobalt Substances 0.000 claims abstract description 19
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 17
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 15
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052718 tin Inorganic materials 0.000 claims abstract description 10
- 239000011135 tin Substances 0.000 claims abstract description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 239000011733 molybdenum Substances 0.000 claims abstract description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims abstract description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 claims abstract 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 72
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 43
- 150000002739 metals Chemical class 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 35
- 239000000956 alloy Substances 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 238000010304 firing Methods 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 16
- 230000004907 flux Effects 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910001507 metal halide Inorganic materials 0.000 claims description 8
- 150000005309 metal halides Chemical class 0.000 claims description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000011572 manganese Substances 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 239000004575 stone Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 229910002065 alloy metal Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- IBKBIJITWRZZBB-UHFFFAOYSA-N azanylidynestibane Chemical compound [Sb]#N IBKBIJITWRZZBB-UHFFFAOYSA-N 0.000 claims 3
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000035939 shock Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 67
- 238000006243 chemical reaction Methods 0.000 description 38
- 239000000843 powder Substances 0.000 description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 238000004455 differential thermal analysis Methods 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 25
- 238000002844 melting Methods 0.000 description 25
- 230000008018 melting Effects 0.000 description 25
- 238000002411 thermogravimetry Methods 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- -1 ruthenium nitride Chemical class 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- 230000004580 weight loss Effects 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 238000007416 differential thermogravimetric analysis Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 150000004772 tellurides Chemical class 0.000 description 3
- NZIHMSYSZRFUQJ-UHFFFAOYSA-N 6-chloro-1h-benzimidazole-2-carboxylic acid Chemical compound C1=C(Cl)C=C2NC(C(=O)O)=NC2=C1 NZIHMSYSZRFUQJ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910021244 Co2Si Inorganic materials 0.000 description 1
- 229910021300 Co3Si Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 229910017384 Fe3Si Inorganic materials 0.000 description 1
- 229910015364 Fe5Si3 Inorganic materials 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 206010062717 Increased upper airway secretion Diseases 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910016823 Mn3Si Inorganic materials 0.000 description 1
- 229910016586 Mn5Si3 Inorganic materials 0.000 description 1
- 229910017028 MnSi Inorganic materials 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910005487 Ni2Si Inorganic materials 0.000 description 1
- 229910003217 Ni3Si Inorganic materials 0.000 description 1
- 229910005108 Ni3Si2 Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ZVOLCUVKHLEPEV-UHFFFAOYSA-N Quercetagetin Natural products C1=C(O)C(O)=CC=C1C1=C(O)C(=O)C2=C(O)C(O)=C(O)C=C2O1 ZVOLCUVKHLEPEV-UHFFFAOYSA-N 0.000 description 1
- HWTZYBCRDDUBJY-UHFFFAOYSA-N Rhynchosin Natural products C1=C(O)C(O)=CC=C1C1=C(O)C(=O)C2=CC(O)=C(O)C=C2O1 HWTZYBCRDDUBJY-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BEHSQFZSTNVEGP-UHFFFAOYSA-N [Ag].[Ir] Chemical compound [Ag].[Ir] BEHSQFZSTNVEGP-UHFFFAOYSA-N 0.000 description 1
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- SLRARXSIWOVJJA-UHFFFAOYSA-N [Ni].[Nb].[Nb] Chemical compound [Ni].[Nb].[Nb] SLRARXSIWOVJJA-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- WJCRZORJJRCRAW-UHFFFAOYSA-N cadmium gold Chemical compound [Cd].[Au] WJCRZORJJRCRAW-UHFFFAOYSA-N 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- QEEKASZBZSQJIA-UHFFFAOYSA-N chloric acid hydrochloride Chemical compound Cl.O[Cl](=O)=O QEEKASZBZSQJIA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- GSOLWAFGMNOBSY-UHFFFAOYSA-N cobalt Chemical compound [Co][Co][Co][Co][Co][Co][Co][Co] GSOLWAFGMNOBSY-UHFFFAOYSA-N 0.000 description 1
- GBAOZECSOKXKEL-UHFFFAOYSA-N copper yttrium Chemical compound [Cu].[Y] GBAOZECSOKXKEL-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- MWDZOUNAPSSOEL-UHFFFAOYSA-N kaempferol Natural products OC1=C(C(=O)c2cc(O)cc(O)c2O1)c3ccc(O)cc3 MWDZOUNAPSSOEL-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- DEPMYWCZAIMWCR-UHFFFAOYSA-N nickel ruthenium Chemical compound [Ni].[Ru] DEPMYWCZAIMWCR-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 208000026435 phlegm Diseases 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229960001285 quercetin Drugs 0.000 description 1
- REFJWTPEDVJJIY-UHFFFAOYSA-N quercetin Natural products C=1C(O)=CC(O)=C(C(C=2O)=O)C=1OC=2C1=CC=C(O)C(O)=C1 REFJWTPEDVJJIY-UHFFFAOYSA-N 0.000 description 1
- 235000005875 quercetin Nutrition 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13975808P | 2008-12-22 | 2008-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201034227A true TW201034227A (en) | 2010-09-16 |
Family
ID=42264300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098139742A TW201034227A (en) | 2008-12-22 | 2009-11-23 | Compositions and processes for forming photovoltaic devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8710355B2 (enExample) |
| EP (1) | EP2380204A2 (enExample) |
| JP (1) | JP5694949B2 (enExample) |
| KR (1) | KR20110101218A (enExample) |
| CN (1) | CN102301485A (enExample) |
| TW (1) | TW201034227A (enExample) |
| WO (1) | WO2010075247A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI451553B (zh) * | 2011-03-15 | 2014-09-01 | 台灣積體電路製造股份有限公司 | 半導體裝置及其製造方法 |
| TWI464784B (zh) * | 2011-10-28 | 2014-12-11 | Iner Aec Executive Yuan | 一種製作微晶矽薄膜的方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2562792A4 (en) * | 2010-04-23 | 2014-09-24 | Hitachi Chemical Co Ltd | COMPOSITION FOR FORMING AN N-LEADING DIFFUSION LAYER, METHOD FOR PRODUCING THE N-LEADING DIFFUSION LAYER, AND METHOD FOR PRODUCING A SOLAR CELL ELEMENT |
| KR101868163B1 (ko) * | 2010-04-23 | 2018-06-15 | 히타치가세이가부시끼가이샤 | ｐ 형 확산층 형성 조성물, ｐ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법 |
| KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| JP5725180B2 (ja) * | 2011-07-25 | 2015-05-27 | 日立化成株式会社 | 素子および太陽電池 |
| US8901414B2 (en) * | 2011-09-14 | 2014-12-02 | International Business Machines Corporation | Photovoltaic cells with copper grid |
| US20130334501A1 (en) * | 2011-09-15 | 2013-12-19 | The Regents Of The University Of California | Field-Effect P-N Junction |
| KR101149891B1 (ko) * | 2011-12-09 | 2012-06-11 | 한화케미칼 주식회사 | 태양전지 및 이의 제조방법 |
| US9024367B2 (en) | 2012-02-24 | 2015-05-05 | The Regents Of The University Of California | Field-effect P-N junction |
| EP2634816A1 (en) * | 2012-02-28 | 2013-09-04 | PVG Solutions Inc. | Solar battery cell and method of manufacturing the same |
| EP2839511A4 (en) | 2012-04-18 | 2015-12-02 | Heraeus Precious Metals North America Conshohocken Llc | SOLAR CELL CONTACTS WITH INTERMETALLIC NICKEL COMPOSITIONS |
| CN104269448B (zh) * | 2012-06-11 | 2017-02-01 | 苏州晶银新材料股份有限公司 | 光伏电池用正面电极栅线 |
| CN104246910B (zh) * | 2012-10-30 | 2016-06-08 | 化研科技株式会社 | 导电性糊料和芯片焊接方法 |
| KR101396444B1 (ko) * | 2013-05-06 | 2014-05-22 | 한화케미칼 주식회사 | 태양전지의 전극의 제조방법 및 이를 이용한 태양전지 |
| KR101614186B1 (ko) * | 2013-05-20 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| CN103383916B (zh) * | 2013-08-08 | 2016-03-02 | 扬州晶新微电子有限公司 | 可用于共晶焊的p型硅器件芯片背面金属化方法 |
| DE102013016331A1 (de) * | 2013-10-05 | 2015-04-09 | Micronas Gmbh | Schichtsystem |
| US10000645B2 (en) | 2015-11-24 | 2018-06-19 | PLANT PV, Inc. | Methods of forming solar cells with fired multilayer film stacks |
| JP6656698B1 (ja) * | 2019-05-23 | 2020-03-04 | 国立大学法人徳島大学 | 医療用マイクロ波給電システム、医療用受電回路、ショットキーバリアダイオード及び医療用マイクロ波給電方法 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381182A (en) | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
| US3968272A (en) | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
| US4153907A (en) | 1977-05-17 | 1979-05-08 | Vactec, Incorporated | Photovoltaic cell with junction-free essentially-linear connections to its contacts |
| US4105471A (en) | 1977-06-08 | 1978-08-08 | Arco Solar, Inc. | Solar cell with improved printed contact and method of making the same |
| US4278704A (en) | 1980-01-30 | 1981-07-14 | Rca Corporation | Method for forming an electrical contact to a solar cell |
| US4394673A (en) | 1980-09-29 | 1983-07-19 | International Business Machines Corporation | Rare earth silicide Schottky barriers |
| JPS5933868A (ja) | 1982-08-20 | 1984-02-23 | Hitachi Ltd | 半導体装置用電極材料 |
| FR2549290B1 (fr) | 1983-07-13 | 1986-10-10 | Photowatt Int | Encre conductrice pour prise de contact par serigraphie sur du silicium semi-conducteur, procede de realisation d'un contact par serigraphie a l'aide d'une telle encre, et cellule photovoltaique munie d'un tel contact |
| JPS60140880A (ja) | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
| JPS6249676A (ja) | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
| GB8802079D0 (en) | 1988-01-30 | 1988-02-24 | British Petroleum Co Plc | Producing semiconductor layers |
| US5698451A (en) | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
| US5118362A (en) | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JPH06140279A (ja) | 1992-09-11 | 1994-05-20 | Murata Mfg Co Ltd | 積層セラミック電子部品の焼成方法 |
| TW261554B (enExample) | 1992-10-05 | 1995-11-01 | Du Pont | |
| US5429657A (en) | 1994-01-05 | 1995-07-04 | E. I. Du Pont De Nemours And Company | Method for making silver-palladium alloy powders by aerosol decomposition |
| EP1386708B1 (en) * | 1997-02-24 | 2014-06-18 | Cabot Corporation | Particulate products made by an aerosol method |
| CA2280865C (en) | 1997-02-24 | 2008-08-12 | Superior Micropowders Llc | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
| JP3842449B2 (ja) * | 1998-09-30 | 2006-11-08 | 京セラ株式会社 | 太陽電池素子の製造方法 |
| US7052824B2 (en) | 2000-06-30 | 2006-05-30 | E. I. Du Pont De Nemours And Company | Process for thick film circuit patterning |
| US6679938B1 (en) | 2001-01-26 | 2004-01-20 | University Of Maryland | Method of producing metal particles by spray pyrolysis using a co-solvent and apparatus therefor |
| US20030000568A1 (en) * | 2001-06-15 | 2003-01-02 | Ase Americas, Inc. | Encapsulated photovoltaic modules and method of manufacturing same |
| US20040016456A1 (en) * | 2002-07-25 | 2004-01-29 | Clean Venture 21 Corporation | Photovoltaic device and method for producing the same |
| JP2004207493A (ja) | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 半導体装置、その製造方法および太陽電池 |
| JP2004296598A (ja) * | 2003-03-26 | 2004-10-21 | Canon Inc | 太陽電池 |
| US7435361B2 (en) | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| KR20080075156A (ko) | 2005-11-07 | 2008-08-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 광전지 콘택 및 배선 형성 방법 |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| US8575474B2 (en) | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
| JP2007266289A (ja) * | 2006-03-28 | 2007-10-11 | Tdk Corp | 積層型セラミック電子部品およびその製造方法 |
| JP5530920B2 (ja) | 2007-04-25 | 2014-06-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 |
| KR20100068274A (ko) | 2007-10-09 | 2010-06-22 | 나노마스 테크놀러지스, 인코포레이티드 | 전도성 나노입자 잉크 및 페이스트, 및 이를 이용한 응용 |
| JP2010020231A (ja) * | 2008-07-14 | 2010-01-28 | Seiko Epson Corp | 電気泳動表示装置、電子機器 |
| US7897434B2 (en) * | 2008-08-12 | 2011-03-01 | International Business Machines Corporation | Methods of fabricating solar cell chips |
| US20100037941A1 (en) | 2008-08-13 | 2010-02-18 | E. I. Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
| US8294024B2 (en) * | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
| TWI366919B (en) | 2008-09-19 | 2012-06-21 | Gintech Energy Corp | Structure of solar cell and its production method |
| US8850408B2 (en) | 2011-08-10 | 2014-09-30 | Nintendo Of America, Inc. | Methods and/or systems for determining a series of return callstacks |
-
2009
- 2009-11-13 US US12/617,929 patent/US8710355B2/en not_active Expired - Fee Related
- 2009-11-23 TW TW098139742A patent/TW201034227A/zh unknown
- 2009-12-21 CN CN2009801529984A patent/CN102301485A/zh active Pending
- 2009-12-21 KR KR1020117017087A patent/KR20110101218A/ko not_active Abandoned
- 2009-12-21 EP EP09795655A patent/EP2380204A2/en not_active Withdrawn
- 2009-12-21 JP JP2011542528A patent/JP5694949B2/ja not_active Expired - Fee Related
- 2009-12-21 WO PCT/US2009/068914 patent/WO2010075247A2/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI451553B (zh) * | 2011-03-15 | 2014-09-01 | 台灣積體電路製造股份有限公司 | 半導體裝置及其製造方法 |
| TWI464784B (zh) * | 2011-10-28 | 2014-12-11 | Iner Aec Executive Yuan | 一種製作微晶矽薄膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5694949B2 (ja) | 2015-04-01 |
| KR20110101218A (ko) | 2011-09-15 |
| JP2012513676A (ja) | 2012-06-14 |
| WO2010075247A3 (en) | 2011-07-07 |
| US8710355B2 (en) | 2014-04-29 |
| US20100154875A1 (en) | 2010-06-24 |
| EP2380204A2 (en) | 2011-10-26 |
| WO2010075247A2 (en) | 2010-07-01 |
| CN102301485A (zh) | 2011-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201034227A (en) | Compositions and processes for forming photovoltaic devices | |
| US8294024B2 (en) | Processes for forming photovoltaic devices | |
| US20100037941A1 (en) | Compositions and processes for forming photovoltaic devices | |
| US8840701B2 (en) | Multi-element metal powders for silicon solar cells | |
| CN105122462A (zh) | 用于太阳能电池导电触点的粘附力增强的晶种层 | |
| TW201035260A (en) | Conductive paste for solar cell electrode | |
| CN102376379A (zh) | 导电糊料及包含用其形成的电极的电子器件和太阳能电池 | |
| JP6206491B2 (ja) | 電極形成用組成物、太陽電池素子及び太陽電池 | |
| JP5879790B2 (ja) | 電極用ペースト組成物および太陽電池 | |
| JP2016189443A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法、並びに太陽電池 | |
| JP2016189310A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法並びに太陽電池 | |
| JP2016189447A (ja) | 太陽電池素子及びその製造方法並びに太陽電池 | |
| JP2016189307A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法並びに太陽電池 | |
| WO2022181732A1 (ja) | 太陽電池素子及び太陽電池 | |
| JP6065049B2 (ja) | 電極用ペースト組成物および太陽電池 | |
| JP2016189312A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法並びに太陽電池 | |
| JP2016189311A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法並びに太陽電池 | |
| JP2016189309A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法並びに太陽電池 | |
| JP2016189306A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法、並びに太陽電池 | |
| JP2016189308A (ja) | 電極形成用組成物、電極、太陽電池素子及びその製造方法、並びに太陽電池 |