JP5530920B2 - 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 - Google Patents
銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 Download PDFInfo
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- JP5530920B2 JP5530920B2 JP2010506492A JP2010506492A JP5530920B2 JP 5530920 B2 JP5530920 B2 JP 5530920B2 JP 2010506492 A JP2010506492 A JP 2010506492A JP 2010506492 A JP2010506492 A JP 2010506492A JP 5530920 B2 JP5530920 B2 JP 5530920B2
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- nickel
- alloy
- silver
- aluminum
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims description 166
- 239000004332 silver Substances 0.000 title claims description 115
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title description 113
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- 230000015572 biosynthetic process Effects 0.000 title description 13
- 239000004020 conductor Substances 0.000 title description 4
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- 239000000203 mixture Substances 0.000 claims description 51
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- 239000010703 silicon Substances 0.000 claims description 51
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- 238000010304 firing Methods 0.000 claims description 33
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
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- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
- Electrodes Of Semiconductors (AREA)
Description
20 n型拡散層
30 前面保護層/反射防止膜
40 p+層(裏面電界:BSF)
70 裏面に形成された、銀、もしくは銀/ニッケル、もしくは銀/アルミニウム/ニッケルペースト
71 ペースト70の焼成によって得られた、銀、もしくは銀/ニッケル、もしくは銀/アルミニウム/ニッケル裏面電極
80 裏面に形成された、アルミニウム、もしくはアルミニウム/ニッケルペースト
81 ペースト80の焼成によって形成された、アルミニウム、もしくはアルミニウム/ニッケル裏面電極
500 前面銀/ニッケルペースト
501 ARCを介してペースト500を焼成した後の銀/ニッケル前面電極
Claims (20)
- ガラス部、及び導電性金属部を含む厚膜ペーストであって、前記導電性金属部が、
a.13.8〜87.5重量%の銀と、
b.ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される12.5〜86.2重量%のニッケル合金と
を含むことを特徴とする厚膜ペースト。 - ニッケル合金が、1〜25重量%のアルミニウム、0〜30重量%のクロム、及びニッケルを含むことを特徴とする請求項1に記載の厚膜ペースト。
- ニッケル合金が、ニッケル−クロム合金であり、前記ニッケル−クロム合金が、1〜60重量%のクロムを含むことを特徴とする請求項1に記載の厚膜ペースト。
- 前記ニッケル合金が、さらに、コバルト、鉄、シリコン、モリブデン、マンガン、及びそれらの組合せからなる群から選択される元素を含むことを特徴とする請求項2に記載の厚膜ペースト。
- 前記ニッケル合金が、さらに、バナジウム、アンチモン、タンタル、ニオブ、及びそれらの組合せからなる群から選択される元素を含むことを特徴とする請求項2に記載の厚膜ペースト。
- ニッケル合金がニッケル−アルミニウム合金であり、前記ニッケル−アルミニウム合金が、75〜99重量%のニッケルと、1〜25重量%のアルミニウムとを含むことを特徴とする請求項1に記載の厚膜ペースト。
- 導電性金属部が、
a.20〜80重量%の銀と、
b.ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される20〜80重量%のニッケル合金と
を含むことを特徴とする請求項1に記載の厚膜ペースト。 - 導電性金属部が、
a.37.5〜75重量%の銀と、
b.25〜62.5重量%のニッケル合金と
を含むことを特徴とする請求項1に記載の厚膜ペースト。 - ニッケル合金がニッケル−アルミニウム合金であり、前記ニッケル−アルミニウム合金が、1〜20重量%のアルミニウムと、80〜99重量%のニッケルとを含むことを特徴とする請求項1に記載の厚膜ペースト。
- ガラス部、及び導電性金属部を含む厚膜ペーストであって、前記導電性金属部が、
a.13.8〜87.5重量%の銀と、
b.ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される12.5〜86.2重量%のニッケル合金と
を含み、
前記ガラス部が、部分的に結晶化したガラスを含むことを特徴とする厚膜ペースト。 - a.2ミクロン以下の粒径を有するフリット粒子を含むガラス部であり、部分的に結晶化した少なくとも1種のガラスフリットを含むガラス部と、
b.導電性金属部であって、
i.13.8〜87.5重量%の銀と、
ii.ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される12.5〜86.2重量%のニッケル合金とを含む導電性金属部と
を含むことを特徴とする厚膜ペースト。 - 前面コンタクトを含む太陽電池であって、前記前面コンタクトが、ガラス部及び導電性金属部を含むペースト組成物を焼成して形成され、前記導電性金属部が、
13.8〜87.5重量%の銀と、
ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される12.5〜86.2重量%のニッケル合金と
を含むことを特徴とする太陽電池。 - 前記導電性金属部が、さらに、コバルト、鉄、シリコン、マンガン、マンガン、イットリウム、及びそれらの組合せからなる群から選択される元素を含むことを特徴とする請求項12に記載の太陽電池。
- 前記ニッケル合金が、さらに、バナジウム、アンチモン、タンタル、ニオブ、及びそれらの組合せからなる群から選択される元素を含むことを特徴とする請求項12に記載の太陽電池。
- 前記導電性金属部が、
20〜80重量%の銀と、
ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される20〜80重量%のニッケル合金と
を含むことを特徴とする請求項12に記載の太陽電池。 - 前記ニッケル合金がニッケル−アルミニウム合金であり、前記ニッケル−アルミニウム合金が、80〜99重量%のニッケルと、1〜20重量%のアルミニウムとを含むことを特徴とする請求項15に記載の太陽電池。
- ニッケル合金がニッケル−クロム合金であり、前記ニッケル−クロム合金が、48〜81重量%のニッケルと、19〜52重量%のクロムとを含むことを特徴とする請求項15に記載の太陽電池。
- 太陽電池コンタクトの製造方法であり、該方法が、
a.ペーストをシリコンウェハに塗布する工程であり、該ペーストが、
i.ガラス部と、
ii.導電性金属部とを含み、該導電性金属部が、
1.13.8〜87.5重量%の銀と、
2.ニッケル−アルミニウム合金、ニッケル−クロム合金、及び、ニッケル−アルミニウム−クロム合金、及びそれらの組合せからなる群から選択される12.5〜86.2重量%のニッケル合金と
を含むことを特徴とする塗布工程と、
b.前記金属部を焼結し、且つ前記ガラス部を融解させるのに十分な時間及び温度でシリコンウェハを焼成する工程と
を含むことを特徴とする太陽電池コンタクトの製造方法。 - ガラス部が、部分的に結晶化したガラスを含むことを特徴とする請求項18に記載の方法。
- ガラス部が、焼成に先立って、2ミクロン以下の平均粒径を有するフリット粒子を含むことを特徴とする請求項18に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91381907P | 2007-04-25 | 2007-04-25 | |
US60/913,819 | 2007-04-25 | ||
PCT/US2008/061406 WO2008134417A1 (en) | 2007-04-25 | 2008-04-24 | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010526414A JP2010526414A (ja) | 2010-07-29 |
JP5530920B2 true JP5530920B2 (ja) | 2014-06-25 |
Family
ID=39926065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010506492A Expired - Fee Related JP5530920B2 (ja) | 2007-04-25 | 2008-04-24 | 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100163101A1 (ja) |
EP (1) | EP2137739B1 (ja) |
JP (1) | JP5530920B2 (ja) |
KR (1) | KR101623597B1 (ja) |
CN (1) | CN101663711B (ja) |
ES (1) | ES2651625T3 (ja) |
WO (1) | WO2008134417A1 (ja) |
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- 2008-04-24 JP JP2010506492A patent/JP5530920B2/ja not_active Expired - Fee Related
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JP2010526414A (ja) | 2010-07-29 |
KR101623597B1 (ko) | 2016-05-23 |
EP2137739A4 (en) | 2013-04-24 |
CN101663711A (zh) | 2010-03-03 |
EP2137739B1 (en) | 2017-11-01 |
WO2008134417A1 (en) | 2008-11-06 |
KR20100015801A (ko) | 2010-02-12 |
CN101663711B (zh) | 2013-02-27 |
US20100163101A1 (en) | 2010-07-01 |
ES2651625T3 (es) | 2018-01-29 |
EP2137739A1 (en) | 2009-12-30 |
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