JP5694949B2 - 光起電力素子を形成するための組成物と方法 - Google Patents

光起電力素子を形成するための組成物と方法 Download PDF

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Publication number
JP5694949B2
JP5694949B2 JP2011542528A JP2011542528A JP5694949B2 JP 5694949 B2 JP5694949 B2 JP 5694949B2 JP 2011542528 A JP2011542528 A JP 2011542528A JP 2011542528 A JP2011542528 A JP 2011542528A JP 5694949 B2 JP5694949 B2 JP 5694949B2
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metal
exchange
contact
layer
silicon
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Japanese (ja)
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JP2012513676A (ja
JP2012513676A5 (enExample
Inventor
ボーランド ウィリアム
ボーランド ウィリアム
デイビッド グリックスマン ハワード
デイビッド グリックスマン ハワード
マリア ジョン−ポール
マリア ジョン−ポール
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011542528A 2008-12-22 2009-12-21 光起電力素子を形成するための組成物と方法 Expired - Fee Related JP5694949B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13975808P 2008-12-22 2008-12-22
US61/139,758 2008-12-22
PCT/US2009/068914 WO2010075247A2 (en) 2008-12-22 2009-12-21 Compositions and processes for forming photovoltaic devices

Publications (3)

Publication Number Publication Date
JP2012513676A JP2012513676A (ja) 2012-06-14
JP2012513676A5 JP2012513676A5 (enExample) 2013-02-14
JP5694949B2 true JP5694949B2 (ja) 2015-04-01

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JP2011542528A Expired - Fee Related JP5694949B2 (ja) 2008-12-22 2009-12-21 光起電力素子を形成するための組成物と方法

Country Status (7)

Country Link
US (1) US8710355B2 (enExample)
EP (1) EP2380204A2 (enExample)
JP (1) JP5694949B2 (enExample)
KR (1) KR20110101218A (enExample)
CN (1) CN102301485A (enExample)
TW (1) TW201034227A (enExample)
WO (1) WO2010075247A2 (enExample)

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US8378490B2 (en) * 2011-03-15 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor apparatus including a metal alloy between a first contact and a second contact
JP5725180B2 (ja) * 2011-07-25 2015-05-27 日立化成株式会社 素子および太陽電池
US8901414B2 (en) * 2011-09-14 2014-12-02 International Business Machines Corporation Photovoltaic cells with copper grid
US20130334501A1 (en) * 2011-09-15 2013-12-19 The Regents Of The University Of California Field-Effect P-N Junction
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US9024367B2 (en) 2012-02-24 2015-05-05 The Regents Of The University Of California Field-effect P-N junction
EP2634816A1 (en) * 2012-02-28 2013-09-04 PVG Solutions Inc. Solar battery cell and method of manufacturing the same
EP2839511A4 (en) 2012-04-18 2015-12-02 Heraeus Precious Metals North America Conshohocken Llc SOLAR CELL CONTACTS WITH INTERMETALLIC NICKEL COMPOSITIONS
CN104269448B (zh) * 2012-06-11 2017-02-01 苏州晶银新材料股份有限公司 光伏电池用正面电极栅线
CN104246910B (zh) * 2012-10-30 2016-06-08 化研科技株式会社 导电性糊料和芯片焊接方法
KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
KR101614186B1 (ko) * 2013-05-20 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
CN103383916B (zh) * 2013-08-08 2016-03-02 扬州晶新微电子有限公司 可用于共晶焊的p型硅器件芯片背面金属化方法
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JP6656698B1 (ja) * 2019-05-23 2020-03-04 国立大学法人徳島大学 医療用マイクロ波給電システム、医療用受電回路、ショットキーバリアダイオード及び医療用マイクロ波給電方法

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Also Published As

Publication number Publication date
KR20110101218A (ko) 2011-09-15
TW201034227A (en) 2010-09-16
JP2012513676A (ja) 2012-06-14
WO2010075247A3 (en) 2011-07-07
US8710355B2 (en) 2014-04-29
US20100154875A1 (en) 2010-06-24
EP2380204A2 (en) 2011-10-26
WO2010075247A2 (en) 2010-07-01
CN102301485A (zh) 2011-12-28

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