KR20110050512A - 광기전력 디바이스를 형성하는 조성물 및 공정 - Google Patents

광기전력 디바이스를 형성하는 조성물 및 공정 Download PDF

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KR20110050512A
KR20110050512A KR20117005773A KR20117005773A KR20110050512A KR 20110050512 A KR20110050512 A KR 20110050512A KR 20117005773 A KR20117005773 A KR 20117005773A KR 20117005773 A KR20117005773 A KR 20117005773A KR 20110050512 A KR20110050512 A KR 20110050512A
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metal
reactive metal
silicon
contact
reactive
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Korean (ko)
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윌리엄 보란드
존-폴 마리아
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이 아이 듀폰 디 네모아 앤드 캄파니
노쓰 캐롤라이나 스테이트 유니버시티
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Publication of KR20110050512A publication Critical patent/KR20110050512A/ko
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  • Engineering & Computer Science (AREA)
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  • Electrodes Of Semiconductors (AREA)
KR20117005773A 2008-08-13 2009-08-11 광기전력 디바이스를 형성하는 조성물 및 공정 Abandoned KR20110050512A (ko)

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Application Number Priority Date Filing Date Title
US8850408P 2008-08-13 2008-08-13
US61/088,504 2008-08-13

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KR20110050512A true KR20110050512A (ko) 2011-05-13

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KR20117005773A Abandoned KR20110050512A (ko) 2008-08-13 2009-08-11 광기전력 디바이스를 형성하는 조성물 및 공정

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US (2) US8294024B2 (enExample)
EP (1) EP2324511A2 (enExample)
JP (1) JP2012500472A (enExample)
KR (1) KR20110050512A (enExample)
CN (1) CN102119445B (enExample)
TW (1) TW201019488A (enExample)
WO (1) WO2010019552A2 (enExample)

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US8294024B2 (en) 2008-08-13 2012-10-23 E I Du Pont De Nemours And Company Processes for forming photovoltaic devices
WO2013151675A1 (en) * 2012-04-04 2013-10-10 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US9425393B2 (en) 2008-12-19 2016-08-23 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US8710355B2 (en) * 2008-12-22 2014-04-29 E I Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
WO2012129184A1 (en) * 2011-03-18 2012-09-27 Crystal Solar, Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
KR102011477B1 (ko) * 2011-03-29 2019-08-16 썬 케미칼 코포레이션 왁스 요변체를 함유하는 고-종횡비 스크린 인쇄성 후막 페이스트 조성물
US20120285517A1 (en) * 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
CN103022163A (zh) * 2011-09-22 2013-04-03 比亚迪股份有限公司 一种晶硅太阳能电池及其制备方法
ZA201208283B (en) * 2011-11-04 2013-07-31 Heraeus Precious Metals North America Conshohocken Llc Organic vehicle for electroconductive paste
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JP5584846B1 (ja) * 2012-12-20 2014-09-03 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
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KR102018649B1 (ko) * 2013-06-21 2019-09-05 엘지전자 주식회사 태양 전지
US9917158B2 (en) 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
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CN105097503B (zh) * 2014-05-13 2017-11-17 复旦大学 一种调节硅化钛/硅肖特基接触势垒的方法
US10340353B2 (en) * 2014-08-01 2019-07-02 The United States Of America, As Represented By The Secretary Of The Navy Epitaxial metallic transition metal nitride layers for compound semiconductor devices
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CN102119445B (zh) 2013-07-24
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US20100037942A1 (en) 2010-02-18
US20130000709A1 (en) 2013-01-03

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