KR20110050512A - 광기전력 디바이스를 형성하는 조성물 및 공정 - Google Patents
광기전력 디바이스를 형성하는 조성물 및 공정 Download PDFInfo
- Publication number
- KR20110050512A KR20110050512A KR20117005773A KR20117005773A KR20110050512A KR 20110050512 A KR20110050512 A KR 20110050512A KR 20117005773 A KR20117005773 A KR 20117005773A KR 20117005773 A KR20117005773 A KR 20117005773A KR 20110050512 A KR20110050512 A KR 20110050512A
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- Prior art keywords
- metal
- reactive metal
- silicon
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- H—ELECTRICITY
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02E10/00—Energy generation through renewable energy sources
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8850408P | 2008-08-13 | 2008-08-13 | |
| US61/088,504 | 2008-08-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110050512A true KR20110050512A (ko) | 2011-05-13 |
Family
ID=41669606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR20117005773A Abandoned KR20110050512A (ko) | 2008-08-13 | 2009-08-11 | 광기전력 디바이스를 형성하는 조성물 및 공정 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8294024B2 (enExample) |
| EP (1) | EP2324511A2 (enExample) |
| JP (1) | JP2012500472A (enExample) |
| KR (1) | KR20110050512A (enExample) |
| CN (1) | CN102119445B (enExample) |
| TW (1) | TW201019488A (enExample) |
| WO (1) | WO2010019552A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI438923B (zh) * | 2008-07-30 | 2014-05-21 | Epistar Corp | 光電元件製造方法 |
| US8840701B2 (en) * | 2008-08-13 | 2014-09-23 | E I Du Pont De Nemours And Company | Multi-element metal powders for silicon solar cells |
| US8294024B2 (en) | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
| WO2013151675A1 (en) * | 2012-04-04 | 2013-10-10 | The Trustees Of The University Of Pennsylvania | Non-volatile resistance-switching thin film devices |
| US9425393B2 (en) | 2008-12-19 | 2016-08-23 | The Trustees Of The University Of Pennsylvania | Non-volatile resistance-switching thin film devices |
| US8710355B2 (en) * | 2008-12-22 | 2014-04-29 | E I Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
| WO2012129184A1 (en) * | 2011-03-18 | 2012-09-27 | Crystal Solar, Inc. | Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells |
| KR102011477B1 (ko) * | 2011-03-29 | 2019-08-16 | 썬 케미칼 코포레이션 | 왁스 요변체를 함유하는 고-종횡비 스크린 인쇄성 후막 페이스트 조성물 |
| US20120285517A1 (en) * | 2011-05-09 | 2012-11-15 | International Business Machines Corporation | Schottky barrier solar cells with high and low work function metal contacts |
| CN103022163A (zh) * | 2011-09-22 | 2013-04-03 | 比亚迪股份有限公司 | 一种晶硅太阳能电池及其制备方法 |
| ZA201208283B (en) * | 2011-11-04 | 2013-07-31 | Heraeus Precious Metals North America Conshohocken Llc | Organic vehicle for electroconductive paste |
| NL2009382C2 (en) * | 2012-08-29 | 2014-03-18 | M4Si B V | Method for manufacturing a solar cell and solar cell obtained therewith. |
| JP5584846B1 (ja) * | 2012-12-20 | 2014-09-03 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
| CN103311367A (zh) * | 2013-05-31 | 2013-09-18 | 浙江正泰太阳能科技有限公司 | 一种晶体硅太阳能电池的制备方法 |
| KR102018649B1 (ko) * | 2013-06-21 | 2019-09-05 | 엘지전자 주식회사 | 태양 전지 |
| US9917158B2 (en) | 2013-07-30 | 2018-03-13 | Samsung Electronics Co., Ltd. | Device contact structures including heterojunctions for low contact resistance |
| US9685509B2 (en) | 2013-07-30 | 2017-06-20 | Samsung Electronics Co., Ltd. | Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions |
| CN103545405B (zh) * | 2013-11-11 | 2016-03-30 | 天津三安光电有限公司 | 氮化物发光二极管 |
| CN103943167B (zh) * | 2014-04-18 | 2016-06-08 | 西安交通大学 | 一种Ag(V,Nb)/稀土晶体硅太阳电池合金浆料及其制备方法 |
| CN105097503B (zh) * | 2014-05-13 | 2017-11-17 | 复旦大学 | 一种调节硅化钛/硅肖特基接触势垒的方法 |
| US10340353B2 (en) * | 2014-08-01 | 2019-07-02 | The United States Of America, As Represented By The Secretary Of The Navy | Epitaxial metallic transition metal nitride layers for compound semiconductor devices |
| US10224481B2 (en) | 2014-10-07 | 2019-03-05 | The Trustees Of The University Of Pennsylvania | Mechanical forming of resistive memory devices |
| CN113629155B (zh) * | 2021-08-06 | 2023-03-24 | 常州时创能源股份有限公司 | 一种晶硅太阳能电池 |
| CN117727491B (zh) * | 2024-01-31 | 2024-06-18 | 江苏富乐华功率半导体研究院有限公司 | 一种用于氮化硅共烧的电子浆料及其制备方法 |
| CN118946178A (zh) * | 2024-08-22 | 2024-11-12 | 滁州捷泰新能源科技有限公司 | 一种钙钛矿/晶体硅叠层电池及其制备方法 |
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-
2009
- 2009-08-05 US US12/536,238 patent/US8294024B2/en not_active Expired - Fee Related
- 2009-08-11 KR KR20117005773A patent/KR20110050512A/ko not_active Abandoned
- 2009-08-11 WO PCT/US2009/053375 patent/WO2010019552A2/en not_active Ceased
- 2009-08-11 JP JP2011523088A patent/JP2012500472A/ja active Pending
- 2009-08-11 CN CN2009801316691A patent/CN102119445B/zh not_active Expired - Fee Related
- 2009-08-11 EP EP20090791368 patent/EP2324511A2/en not_active Withdrawn
- 2009-08-13 TW TW98127306A patent/TW201019488A/zh unknown
-
2012
- 2012-09-14 US US13/615,767 patent/US20130000709A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US8294024B2 (en) | 2012-10-23 |
| CN102119445A (zh) | 2011-07-06 |
| JP2012500472A (ja) | 2012-01-05 |
| WO2010019552A2 (en) | 2010-02-18 |
| CN102119445B (zh) | 2013-07-24 |
| EP2324511A2 (en) | 2011-05-25 |
| TW201019488A (en) | 2010-05-16 |
| WO2010019552A3 (en) | 2010-11-18 |
| US20100037942A1 (en) | 2010-02-18 |
| US20130000709A1 (en) | 2013-01-03 |
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