JP2012222157A - 基板処理装置、及び、太陽電池の製造方法 - Google Patents

基板処理装置、及び、太陽電池の製造方法 Download PDF

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Publication number
JP2012222157A
JP2012222157A JP2011086642A JP2011086642A JP2012222157A JP 2012222157 A JP2012222157 A JP 2012222157A JP 2011086642 A JP2011086642 A JP 2011086642A JP 2011086642 A JP2011086642 A JP 2011086642A JP 2012222157 A JP2012222157 A JP 2012222157A
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JP
Japan
Prior art keywords
reaction tube
processing chamber
containing gas
copper
coating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011086642A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012222157A5 (enExample
Inventor
Eisuke Nishitani
英輔 西谷
Yasuo Kunii
泰夫 国井
Kazuyuki Toyoda
一行 豊田
Hironobu Miya
博信 宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2011086642A priority Critical patent/JP2012222157A/ja
Priority to KR1020120022171A priority patent/KR20120115091A/ko
Priority to US13/427,419 priority patent/US20120258566A1/en
Priority to TW101110714A priority patent/TWI462322B/zh
Priority to CN201210104813.6A priority patent/CN102738261B/zh
Publication of JP2012222157A publication Critical patent/JP2012222157A/ja
Publication of JP2012222157A5 publication Critical patent/JP2012222157A5/ja
Priority to KR20140158573A priority patent/KR20150002556A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2011086642A 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法 Pending JP2012222157A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011086642A JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法
KR1020120022171A KR20120115091A (ko) 2011-04-08 2012-03-05 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법
US13/427,419 US20120258566A1 (en) 2011-04-08 2012-03-22 Substrate processing apparatus, method for manufacturing solar battery, and method for manufacturing substrate
TW101110714A TWI462322B (zh) 2011-04-08 2012-03-28 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管
CN201210104813.6A CN102738261B (zh) 2011-04-08 2012-04-06 衬底处理装置、太阳能电池的制造方法及衬底的制造方法
KR20140158573A KR20150002556A (ko) 2011-04-08 2014-11-14 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011086642A JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JP2012222157A true JP2012222157A (ja) 2012-11-12
JP2012222157A5 JP2012222157A5 (enExample) 2014-05-15

Family

ID=46966423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011086642A Pending JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Country Status (5)

Country Link
US (1) US20120258566A1 (enExample)
JP (1) JP2012222157A (enExample)
KR (2) KR20120115091A (enExample)
CN (1) CN102738261B (enExample)
TW (1) TWI462322B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016538730A (ja) * 2013-09-10 2016-12-08 テラセミコン コーポレイション 熱処理装置のチャンバ及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106693B4 (de) * 2015-04-29 2024-11-28 Infineon Technologies Austria Ag Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JP6068633B2 (ja) * 2013-05-31 2017-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び炉口蓋体
CN104677116B (zh) * 2014-12-30 2017-09-19 湖南顶立科技有限公司 一种自膨胀式超高温加热器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185820A (ja) * 1989-12-15 1991-08-13 Toshiba Ceramics Co Ltd 半導体用処理部材
JPH0871408A (ja) * 1994-03-15 1996-03-19 Applied Materials Inc 化学的攻撃ガス環境に露出されるプラズマ処理室の加熱金属表面用セラミック保護及びその加熱金属表面の保護方法
JP2004143583A (ja) * 2002-08-30 2004-05-20 Tosoh Corp 石英ガラス部品及びその製造方法並びにそれを用いた装置
WO2008085604A2 (en) * 2006-11-10 2008-07-17 Solopower, Inc. Reel-to-reel reaction of precursor film to form solar cell absorber
JP2008247639A (ja) * 2007-03-29 2008-10-16 Tosoh Quartz Corp 石英ガラス材料及びその製造方法
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
US20120015476A1 (en) * 2008-06-20 2012-01-19 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfer, in particular flat substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
WO2004027849A1 (ja) * 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US20080210168A1 (en) * 2007-01-18 2008-09-04 May Su Single chamber, multiple tube high efficiency vertical furnace system
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185820A (ja) * 1989-12-15 1991-08-13 Toshiba Ceramics Co Ltd 半導体用処理部材
JPH0871408A (ja) * 1994-03-15 1996-03-19 Applied Materials Inc 化学的攻撃ガス環境に露出されるプラズマ処理室の加熱金属表面用セラミック保護及びその加熱金属表面の保護方法
JP2004143583A (ja) * 2002-08-30 2004-05-20 Tosoh Corp 石英ガラス部品及びその製造方法並びにそれを用いた装置
WO2008085604A2 (en) * 2006-11-10 2008-07-17 Solopower, Inc. Reel-to-reel reaction of precursor film to form solar cell absorber
JP2008247639A (ja) * 2007-03-29 2008-10-16 Tosoh Quartz Corp 石英ガラス材料及びその製造方法
US20120015476A1 (en) * 2008-06-20 2012-01-19 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfer, in particular flat substrates
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
JP2012510713A (ja) * 2008-11-28 2012-05-10 プロブスト、フォルカー 平坦基板にセレン、硫黄元素処理で半導体層と被覆基板を製造する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016538730A (ja) * 2013-09-10 2016-12-08 テラセミコン コーポレイション 熱処理装置のチャンバ及びその製造方法

Also Published As

Publication number Publication date
KR20120115091A (ko) 2012-10-17
TWI462322B (zh) 2014-11-21
TW201251100A (en) 2012-12-16
KR20150002556A (ko) 2015-01-07
US20120258566A1 (en) 2012-10-11
CN102738261A (zh) 2012-10-17
CN102738261B (zh) 2015-05-27

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