KR20120115091A - 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법 - Google Patents

기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법 Download PDF

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Publication number
KR20120115091A
KR20120115091A KR1020120022171A KR20120022171A KR20120115091A KR 20120115091 A KR20120115091 A KR 20120115091A KR 1020120022171 A KR1020120022171 A KR 1020120022171A KR 20120022171 A KR20120022171 A KR 20120022171A KR 20120115091 A KR20120115091 A KR 20120115091A
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KR
South Korea
Prior art keywords
containing gas
reaction tube
copper
chamber
coating film
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Ceased
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KR1020120022171A
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English (en)
Korean (ko)
Inventor
에이스케 니시타니
야스오 쿠니이
카즈유키 토요다
히로노부 미야
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
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Publication of KR20120115091A publication Critical patent/KR20120115091A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020120022171A 2011-04-08 2012-03-05 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법 Ceased KR20120115091A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-086642 2011-04-08
JP2011086642A JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Related Child Applications (1)

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KR20140158573A Division KR20150002556A (ko) 2011-04-08 2014-11-14 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법

Publications (1)

Publication Number Publication Date
KR20120115091A true KR20120115091A (ko) 2012-10-17

Family

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Family Applications (2)

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KR1020120022171A Ceased KR20120115091A (ko) 2011-04-08 2012-03-05 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법
KR20140158573A Abandoned KR20150002556A (ko) 2011-04-08 2014-11-14 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR20140158573A Abandoned KR20150002556A (ko) 2011-04-08 2014-11-14 기판 처리 장치, 태양 전지의 제조 방법 및 기판의 제조 방법

Country Status (5)

Country Link
US (1) US20120258566A1 (enExample)
JP (1) JP2012222157A (enExample)
KR (2) KR20120115091A (enExample)
CN (1) CN102738261B (enExample)
TW (1) TWI462322B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106693B4 (de) * 2015-04-29 2024-11-28 Infineon Technologies Austria Ag Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JP6068633B2 (ja) * 2013-05-31 2017-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び炉口蓋体
CN105531808A (zh) * 2013-09-10 2016-04-27 泰拉半导体株式会社 热处理装置的腔室及其制造方法
CN104677116B (zh) * 2014-12-30 2017-09-19 湖南顶立科技有限公司 一种自膨胀式超高温加热器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2855458B2 (ja) * 1989-12-15 1999-02-10 東芝セラミックス株式会社 半導体用処理部材
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP4380211B2 (ja) * 2002-08-30 2009-12-09 東ソー株式会社 石英ガラス部品及びその製造方法並びにそれを用いた装置
WO2004027849A1 (ja) * 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
JP2010509779A (ja) * 2006-11-10 2010-03-25 ソロパワー、インコーポレイテッド 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応
US20080210168A1 (en) * 2007-01-18 2008-09-04 May Su Single chamber, multiple tube high efficiency vertical furnace system
JP5154814B2 (ja) * 2007-03-29 2013-02-27 東ソー・クォーツ株式会社 石英ガラス材料の製造方法
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
EP2144026B1 (de) * 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean

Also Published As

Publication number Publication date
TWI462322B (zh) 2014-11-21
TW201251100A (en) 2012-12-16
KR20150002556A (ko) 2015-01-07
JP2012222157A (ja) 2012-11-12
US20120258566A1 (en) 2012-10-11
CN102738261A (zh) 2012-10-17
CN102738261B (zh) 2015-05-27

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