TWI462322B - 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管 - Google Patents

基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管 Download PDF

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Publication number
TWI462322B
TWI462322B TW101110714A TW101110714A TWI462322B TW I462322 B TWI462322 B TW I462322B TW 101110714 A TW101110714 A TW 101110714A TW 101110714 A TW101110714 A TW 101110714A TW I462322 B TWI462322 B TW I462322B
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TW
Taiwan
Prior art keywords
reaction tube
substrate
processing chamber
gas
copper
Prior art date
Application number
TW101110714A
Other languages
English (en)
Chinese (zh)
Other versions
TW201251100A (en
Inventor
Eisuke Nishitani
Yasuo Kunii
Kazuyuki Toyoda
Hironobu Miya
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201251100A publication Critical patent/TW201251100A/zh
Application granted granted Critical
Publication of TWI462322B publication Critical patent/TWI462322B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW101110714A 2011-04-08 2012-03-28 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管 TWI462322B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011086642A JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (2)

Publication Number Publication Date
TW201251100A TW201251100A (en) 2012-12-16
TWI462322B true TWI462322B (zh) 2014-11-21

Family

ID=46966423

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110714A TWI462322B (zh) 2011-04-08 2012-03-28 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管

Country Status (5)

Country Link
US (1) US20120258566A1 (enExample)
JP (1) JP2012222157A (enExample)
KR (2) KR20120115091A (enExample)
CN (1) CN102738261B (enExample)
TW (1) TWI462322B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106693B4 (de) * 2015-04-29 2024-11-28 Infineon Technologies Austria Ag Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JP6068633B2 (ja) * 2013-05-31 2017-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び炉口蓋体
CN105531808A (zh) * 2013-09-10 2016-04-27 泰拉半导体株式会社 热处理装置的腔室及其制造方法
CN104677116B (zh) * 2014-12-30 2017-09-19 湖南顶立科技有限公司 一种自膨胀式超高温加热器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
EP1947681A2 (en) * 2007-01-18 2008-07-23 Aviza Technology, Inc. Single chamber, multiple tube high efficiency vertical furnace system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2855458B2 (ja) * 1989-12-15 1999-02-10 東芝セラミックス株式会社 半導体用処理部材
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP4380211B2 (ja) * 2002-08-30 2009-12-09 東ソー株式会社 石英ガラス部品及びその製造方法並びにそれを用いた装置
WO2004027849A1 (ja) * 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
JP2010509779A (ja) * 2006-11-10 2010-03-25 ソロパワー、インコーポレイテッド 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応
JP5154814B2 (ja) * 2007-03-29 2013-02-27 東ソー・クォーツ株式会社 石英ガラス材料の製造方法
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
EP2144026B1 (de) * 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
EP1947681A2 (en) * 2007-01-18 2008-07-23 Aviza Technology, Inc. Single chamber, multiple tube high efficiency vertical furnace system

Also Published As

Publication number Publication date
KR20120115091A (ko) 2012-10-17
TW201251100A (en) 2012-12-16
KR20150002556A (ko) 2015-01-07
JP2012222157A (ja) 2012-11-12
US20120258566A1 (en) 2012-10-11
CN102738261A (zh) 2012-10-17
CN102738261B (zh) 2015-05-27

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