TWI462322B - 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管 - Google Patents

基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管 Download PDF

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Publication number
TWI462322B
TWI462322B TW101110714A TW101110714A TWI462322B TW I462322 B TWI462322 B TW I462322B TW 101110714 A TW101110714 A TW 101110714A TW 101110714 A TW101110714 A TW 101110714A TW I462322 B TWI462322 B TW I462322B
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TW
Taiwan
Prior art keywords
reaction tube
substrate
processing chamber
gas
copper
Prior art date
Application number
TW101110714A
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English (en)
Chinese (zh)
Other versions
TW201251100A (en
Inventor
西谷英輔
國井泰夫
豐田一行
宮博信
Original Assignee
日立國際電氣股份有限公司
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Application filed by 日立國際電氣股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TW201251100A publication Critical patent/TW201251100A/zh
Application granted granted Critical
Publication of TWI462322B publication Critical patent/TWI462322B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW101110714A 2011-04-08 2012-03-28 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管 TWI462322B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011086642A JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法

Publications (2)

Publication Number Publication Date
TW201251100A TW201251100A (en) 2012-12-16
TWI462322B true TWI462322B (zh) 2014-11-21

Family

ID=46966423

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110714A TWI462322B (zh) 2011-04-08 2012-03-28 基板處理裝置，太陽電池之製造方法，基板之製造方法及反應管

Country Status (5)

Country Link
US (1) US20120258566A1 (enExample)
JP (1) JP2012222157A (enExample)
KR (2) KR20120115091A (enExample)
CN (1) CN102738261B (enExample)
TW (1) TWI462322B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106693B4 (de) 2015-04-29 2024-11-28 Infineon Technologies Austria Ag Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
CN105247664B (zh) * 2013-05-31 2018-04-10 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及炉口盖体
JP2016538730A (ja) * 2013-09-10 2016-12-08 テラセミコン コーポレイション 熱処理装置のチャンバ及びその製造方法
CN104677116B (zh) * 2014-12-30 2017-09-19 湖南顶立科技有限公司 一种自膨胀式超高温加热器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
EP1947681A2 (en) * 2007-01-18 2008-07-23 Aviza Technology, Inc. Single chamber, multiple tube high efficiency vertical furnace system

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP2855458B2 (ja) * 1989-12-15 1999-02-10 東芝セラミックス株式会社 半導体用処理部材
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP4380211B2 (ja) * 2002-08-30 2009-12-09 東ソー株式会社 石英ガラス部品及びその製造方法並びにそれを用いた装置
WO2004027849A1 (ja) * 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
JP2010509779A (ja) * 2006-11-10 2010-03-25 ソロパワー、インコーポレイテッド 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応
JP5154814B2 (ja) * 2007-03-29 2013-02-27 東ソー・クォーツ株式会社 石英ガラス材料の製造方法
ES2581378T3 (es) * 2008-06-20 2016-09-05 Volker Probst Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados
CN102308174B (zh) * 2008-11-28 2015-08-05 福尔克尔·普洛波斯特 生产半导体层和由单质硒和/或单质硫处理的涂层衬底特别是平面衬底的方法
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
EP1947681A2 (en) * 2007-01-18 2008-07-23 Aviza Technology, Inc. Single chamber, multiple tube high efficiency vertical furnace system

Also Published As

Publication number Publication date
CN102738261B (zh) 2015-05-27
KR20120115091A (ko) 2012-10-17
CN102738261A (zh) 2012-10-17
US20120258566A1 (en) 2012-10-11
JP2012222157A (ja) 2012-11-12
KR20150002556A (ko) 2015-01-07
TW201251100A (en) 2012-12-16

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