CN103022243A - 薄膜太阳能电池制造系统 - Google Patents

薄膜太阳能电池制造系统 Download PDF

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CN103022243A
CN103022243A CN2012100326416A CN201210032641A CN103022243A CN 103022243 A CN103022243 A CN 103022243A CN 2012100326416 A CN2012100326416 A CN 2012100326416A CN 201210032641 A CN201210032641 A CN 201210032641A CN 103022243 A CN103022243 A CN 103022243A
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李适维
蔡耀仓
林明弘
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Axuntek Solar Energy Co Ltd
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Abstract

本发明公开了一种薄膜太阳能电池制造系统,包括炉腔;托座,设置在炉腔内;具有第一前置层的硬基板,第一前置层包括第一IB族与IIIA族,及具有第二前置层的可挠式基板,第二前置层包括第二IB族与IIIA族;气体控制器,用来通入反应气体至炉腔内:以及加热器,用来提高炉腔内的温度,以使反应气体与第一前置层与第二前置层反应以形成黄铜矿结构,用来同时制作硬基板太阳能电池与可挠式基板太阳能电池,或提高可挠式基板太阳能电池的产能。

Description

薄膜太阳能电池制造系统
技术领域
本发明涉及一种制造系统,特别是有关一种同时制作硬基板太阳能电池与可挠式基板太阳能电池,或提高可挠式基板太阳能电池产能的制造系统。
背景技术
硬基板太阳能电池一般利用硒化技术制作。可挠式基板太阳能电池一般则利用卷绕传输(R2R)技术以共蒸方式制作,而卷绕传输技术无法应用在制造硬基板的太阳能电池。卷绕传输技术所使用的共蒸镀方式需使用线性蒸镀源,例如铜靶,其靶材需在极高的温度下才可进行共蒸镀,并且靶材的挥发量不易控制,不利用市场量产的需求。因此,若能设计一种可利用硒化技术同时制作硬基板太阳能电池与可挠式基板太阳能电池以提高产能的制造系统,即为现今太阳能面板产业亟需努力发展的重要课题
发明内容
本发明提供一种薄膜太阳能电池制造系统,以同时制作硬基板太阳能电池与可挠式基板太阳能电池,或提高可挠式基板太阳能电池的产能的制造系统,以解决上述的问题。
基于上述目的,本发明公开一种薄膜太阳能电池的制造系统。制造系统包括炉腔;托座,设置在炉腔内;具有第一前置层的硬基板,第一前置层包括第一I B族与III A族;具有第二前置层的可挠式基板,第二前置层包括第二I B族与III A族;气体控制器,气体控制器用来通入反应气体至炉腔内:以及加热器,加热器用来提高炉腔内的温度,以使反应气体同时与第一前置层与第二前置层反应以形成黄铜矿结构。
基于上述目的,本发明还公开所述薄膜太阳能电池制造系统進一步包括固定元件。所述固定元件包括主体,其用来承载硬基板与可挠式基板;以及卡勾部,设置在主体的一个侧边。卡勾部用来止挡在硬基板与可挠式基板所形成的组合的一个端面,以防止硬基板与可挠式基板分离。
基于上述目的,本发明还公开所述薄膜太阳能电池制造系统進一步包括固定元件。所述固定元件还包括两个卡勾部,分别设置在主体的两个侧边。两个卡勾部分别用来止挡在硬基板与可挠式基板所形成的组合的两个端面,以防止硬基板与可挠式基板分离。
基于上述目的,本发明还公开硬基板与可挠式基板以各自底板相抵靠的方式固定而形成组合。
基于上述目的,本发明还公开可挠式基板部分折曲以挂扣在硬基板而形成组合,并且托座用来承载组合。
基于上述目的,本发明还公开第一I B族与第二I B族包括铜,及第一IIIA族与第二IIIA族包括铟、镓或其组合。
基于上述目的,本发明还公开加热器用来将炉腔内的温度提高至400℃~550℃。
基于上述目的,本发明还公开可挠性基板为金属箔片。
基于上述目的,本发明还公开反应气体为硒化氢或硫化氢。
基于上述目的,本发明还公开一种薄膜太阳能电池的制造系统。制造系统包括有炉腔;托座,设置在炉腔内;支撑件;两个具有前置层的可挠式金属基板,前置层包括I B族与IIIA族,并且这些可挠式金属基板分别以其底板抵靠在支撑件的两个端面而形成组合;气体控制器,气体控制器用来通入反应气体至炉腔内:以及加热器,加热器用来提高炉腔内的温度,以使反应气体与前置层反应以形成黄铜矿结构。
根据上述技术方案,本发明的制造系统可同时制作硬基板太阳能电池与可挠式基板太阳能电池,或提高可挠式基板太阳能电池的产能,并可通过多种类的排列方式,将硬基板与可挠式基板以背对背(或面对面)方式与面对背(或背对面)方式安装在托座内,以达到提高产能的目的。
附图说明
图1为本发明实施例的薄膜太阳能电池的制造系统的功能方块示意图。
图2为本发明的第一实施例的固定元件的示意图。
图3为本发明的第二实施例的固定元件的示意图。
图4为本发明的第三实施例的固定元件的示意图。
图5为本发明另一实施例的硬基板与可挠式基板的组合示意图。
图6与图7分别为本发明不同实施例的硬基板与可挠式基板的配置示意图
其中,附图标记说明如下:
10    制造系统        12        炉腔
14    托座            16、16A、
                                固定元件
                      16B
161   主体            163       卡勾部
18    气体控制器      20        加热器
A     硬基板          B         可挠式基板
S     支撑件
具体实施方式
请参阅图1,图1为本发明实施例的薄膜太阳能电池的制造系统10的功能方块示意图。需提及的是,以下说明所提及的硬基板A与可挠性基板B都包括具有I B族与III A族的前置层(例如Cu-Ga/In,Cu-Ga-In合金,或Cu,Ga,In迭层),并可通过硒化或硫化工艺而形成黄铜矿结构(例如铜铟硒(CIS)、铜铟硫(CIS)、铜铟镓硒(CIGS)或铜铟镓硒硫(CIGSS))。其中,硬基板A与可挠性基板B上的前置层可为具有相同或不相同的化合物组成或比例,其视设计决定。再者,硬基板A可为钠钙玻璃(Soda Lime Glass,SLG硬基板)或无碱玻璃(non-alkali glass),可挠性基板B可为金属箔片或其它可耐高温(例如400度C以上)的薄板,可挠式基板B的厚度可约为0.05~0.5mm。请参阅图1,制造系统10可包括炉腔12、托座14、硬基板A、可挠性基板B、气体控制器18以及加热器20。炉腔12可为密闭式容器,可用来防止有毒反应气体散逸出腔体,而影响操作者健康。托座14以可活动方式设置在炉腔12内,并且具有多个凹槽。固定元件16可用来固定硬基板A与可挠式基板B所形成的组合,并装入托座14以送入炉腔12内进行气体反应工艺。气体控制器18用来控制自外部引入的反应气体至炉腔12内,反应气体可为硒化氢或硫化氢。加热器20用来提高炉腔12内的温度至400℃~550℃来进行高温热处理,以使反应气体可同时与硬基板以及可挠式基板上的前置层产生化学反应,经过约20至60分钟的反应时间后,可形成黄铜矿结构。
请参阅图2,图2为本发明的第一实施例的固定元件16A的示意图。固定元件16A包括主体161,主体161用来承载及支撑硬基板A与可挠式基板B,以及卡勾部163,卡勾部163设置在主体161的一个侧边。卡勾部163用来止挡在硬基板A与可挠式基板B所形成的组合的一个端面,以防止硬基板A与可挠式基板B分离。如图2所示,固定元件16A可为L型扣挂结构。硬基板A以其底板,例如SLG基板,侧向抵靠在可挠式基板B的底板而形成所述组合。L型扣挂结构可用来置放在所述组合的一个端面,并可搭配托座14内的凹槽以将硬基板A与可挠式基板B紧密贴合,由于可挠式基板B(例如金属箔片)可具有优选的热传导性,通过紧密贴合在硬基板的底板,如此可同时使硬基板与可挠式基板进一步均匀受热升温而可得到优选的品质。再者,硬基板A以及可挠式基板B所形成的组合可通过第一实施例的固定元件16A置入炉腔12内,以同时进行硒化或硫化工艺来提高产能。
请参阅图3,图3为本发明的第二实施例的固定元件16B的示意图。固定元件16B包括有主体161及两个卡勾部163。两个卡勾部163分别设置在主体161的两个侧边,用来止挡在硬基板A与可挠式基板B所形成的组合的两个端面,以防止硬基板A与可挠式基板B分离。如图3所示,固定元件16B可为U型夹持结构。硬基板A与可挠式基板B的组合如前述实施例所述,故在此不再详述。U型夹持结构可用来自所述组合的两个端面相向夹持,以确保硬基板A与可挠式基板B可紧密贴合,因此硬基板A与可挠式基板B所形成的组合可通过第二实施例的固定元件16B置入炉腔12内,以同时进行硒化或硫化工艺来提高产能。
请参阅图4,图4为本发明的第三实施例的固定元件16B的示意图。相较第一实施例及第二实施例,第三实施例可用来同时将多个可挠式基板B进行硒化或硫化工艺反应。首先,两个可挠式基板B分别将其可挠式底板抵靠在支撑件S(例如SLG或其它可耐高温的物件)的两个端面而形成组合,意即两个可挠式基板B的前置层涂层分别面向所述组合的外部。可挠性基板B的底板可由金属箔片所形成的可挠性基材,通过金属材质的高热传导性,可同时使支撑件S与两个可挠式基板均匀受热升温,以在硒化或硫化工艺中制作出质量良好的CIS系结晶层。固定元件16B为使用主体161及两个卡勾部163所组成的夹持结构。在第三实施例中,固定元件16B可自所述组合(两个可挠式基板B与一个支撑件S)的两个端面相向夹持,以确保可挠性基板可彼此紧密贴合,以便在置入炉腔12内来同时对两个可挠式基板B进行硒化或硫化工艺。
除此之外,可挠式基板B还可通过其自身挠性而与硬基板A紧密贴合,以形成组合来安装至托座14内。请参阅图5,图5为本发明另一实施例的硬基板A与可挠式基板B的组合示意图。由于可挠式基板B具有可弯折的挠性,因此使用者可通过部分折曲可挠式基板B的一个侧边,并将被折曲的侧边挂吊在硬基板A上以形成图5所示的组合,因此所述组合可直接装入托座14内(意即可不需使用固定元件16来固定硬基板A与可挠式基板B),以送进炉腔12来同时进行硒化或硫化工艺。
值得一提的是,前述实施例的硬基板A与可挠式基板B的组合是将各太阳能电池的底板相抵靠,例如硬基板抵接在可挠式基板,以使硬基板A与可挠式基板B的前置层分别面向所述组合的外部,藉此与气体控制器18所喷发的反应气体反应,而生成黄铜矿结构的薄膜。
请参阅图6与图7,图6与图7分别为本发明不同施例的硬基板A与可挠式基板B的配置示意图。如图6所示,硬基板A的前置层是以面对面(face to face)方式依序摆放,可挠式基板B的前置层也以面对面方式依序摆放,此外,硬基板A与可挠式基板B例如通过L型扣挂结构配合托座14内的凹槽而紧密贴合。另一方面,如图7所示,硬基板A的前置层与可挠性基板B的前置层彼此是以面对面方式依序摆放。本发明额外将可挠式基板B置在硬基板A的底板(非反应侧)上,并且由于可挠式基板B的厚度不会影响硬基板A的前置层所需要的反应空间,因此制造系统10相较现有技术可多出一倍的产能。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以行各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。说明书中所提及的第一前置层与第二前置层等,用以表示元件的名称,并非用来限制元件数量上的上限或下限。

Claims (15)

1.一种薄膜太阳能电池的制造系统,其特征在于,所述制造系统包括:
炉腔;
托座,设置在所述炉腔内;
具有第一前置层的硬基板,所述第一前置层包括第一IB族与IIIA族;
具有第二前置层的可挠式基板,所述第二前置层包括第二IB族与IIIA族;
气体控制器,所述气体控制器用来通入反应气体至所述炉腔内;
以及
加热器,所述加热器用来提高所述炉腔内的温度,以使所述反应气体与所述第一前置层与所述第二前置层反应以形成黄铜矿结构。
2.如权利要求1所述的制造系统,其特征在于,所述制造系统进一步包括固定元件以固定所述硬基板与所述可挠性基板,所述固定元件包括:
主体,所述主体用来承载所述硬基板与所述可挠式基板;以及卡勾部,设置在所述主体的一个侧边,所述卡勾部用来止挡在所述硬基板与所述可挠式基板所形成的组合的一个端面,以防止所述硬基板与所述可挠式基板分离。
3.如权利要求1所述的制造系统,其特征在于,所述制造系统进一步包括固定元件以固定所述硬基板与所述可挠性基板,所述固定元件包括:
主体,所述主体用来承载所述硬基板与所述可挠式基板;以及两个卡勾部,分别设置在所述主体的两个侧边,所述两个卡勾部用来止挡在所述硬基板与所述可挠式基板所形成的组合的两个端面,以防止所述硬基板与所述可挠式基板分离。
4.如权利要求1所述的制造系统,其特征在于,所述硬基板与所述可挠式基板以各自底板相抵靠的方式固定而形成组合。
5.如权利要求1所述的制造系统,其特征在于,所述可挠式基板部分折曲以挂扣在所述硬基板而形成组合,并且所述托座用来承载所述组合。
6.如权利要求1所述的制造系统,其特征在于,所述第一IB族与所述第二IB族包括铜,及所述第一IIIA族与所述第二IIIA族包括铟、镓或其组合。
7.如权利要求1所述的制造系统,其特征在于,所述加热器用来将所述炉腔内的温度提高至400℃~550℃。
8.如权利要求1所述的制造系统,其特征在于,所述可挠性基板为金属箔片。
9.如权利要求1所述的制造系统,其特征在于,所述反应气体为硒化氢或硫化氢。
10.一种薄膜太阳能电池的制造系统,其特征在于,制造系统包括:
炉腔;
托座,设置在所述炉腔内;
支撑件;
两个具有前置层的可挠式金属基板,所述前置层包括IB族与IIIA族,并且所述多个可挠式金属基板分别以其底板抵靠在所述支撑件的两个端面而形成组合;
气体控制器,所述气体控制器用来通入反应气体至所述炉腔内:
以及
加热器,所述加热器用来提高所述炉腔内的温度,以使所述反应气体与所述前置层反应以形成黄铜矿结构。
11.如权利要求10所述的制造系统,其特征在于,所述制造系统进一步包括固定元件以固定所述多个可挠性基板,所述固定元件进一步包括:
主体,所述主体用来承载所述多个可挠式金属基板与所述支撑件;以及
两个卡勾部,分别设置在所述主体的两个侧边,所述两个卡勾部用来止挡在所述多个可挠式金属基板与所述支撑件所形
成的所述组合的两个端面,以防止所述多个可挠式金属基板分离。
12.如权利要求10所述的制造系统,其特征在于,所述可挠式金属基板部分折曲以挂扣在所述支撑件而形成所述组合,并且所述托座用来承载所述组合。
13.如权利要求10所述的制造系统,其特征在于,所述加热器用来将所述炉腔内的温度提高至400℃~550℃。
14.如权利要求10所述的制造系统,其特征在于,所述IB族包括铜,并且所述IIIA族包括铟、镓或其组合。
15.如权利要求10所述的制造系统,其特征在于,所述反应气体为硒化氢或硫化氢。
CN2012100326416A 2011-09-27 2012-02-13 薄膜太阳能电池制造系统 Pending CN103022243A (zh)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2862331Y (zh) * 2005-12-22 2007-01-24 南开大学 用于柔性太阳电池制备的衬底支撑装置
CN1943043A (zh) * 2004-04-09 2007-04-04 本田技研工业株式会社 黄铜矿型薄膜太阳能电池用光吸收层的制造方法
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
CN101383389A (zh) * 2008-10-07 2009-03-11 苏州富能技术有限公司 铜铟镓硒硫或铜铟镓硒或铜铟镓硫薄膜太阳能电池吸收层的制备方法及镀膜设备
CN101410547A (zh) * 2004-11-10 2009-04-15 德斯塔尔科技公司 用于形成薄膜太阳能电池的基于托盘的系统
CN101771099A (zh) * 2008-12-30 2010-07-07 中国电子科技集团公司第十八研究所 一种铜铟镓硒半导体薄膜的制备方法
CN102024870A (zh) * 2010-04-19 2011-04-20 福建欧德生光电科技有限公司 半导体薄膜太阳能电池的制造系统和方法
CN102034896A (zh) * 2009-09-28 2011-04-27 思阳公司 用于薄膜光伏材料硒化的自清洁大规模方法和熔炉系统

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7900579B2 (en) * 2007-09-26 2011-03-08 Tokyo Electron Limited Heat treatment method wherein the substrate holder is composed of two holder constituting bodies that move relative to each other

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
CN1943043A (zh) * 2004-04-09 2007-04-04 本田技研工业株式会社 黄铜矿型薄膜太阳能电池用光吸收层的制造方法
CN101410547A (zh) * 2004-11-10 2009-04-15 德斯塔尔科技公司 用于形成薄膜太阳能电池的基于托盘的系统
CN2862331Y (zh) * 2005-12-22 2007-01-24 南开大学 用于柔性太阳电池制备的衬底支撑装置
CN101383389A (zh) * 2008-10-07 2009-03-11 苏州富能技术有限公司 铜铟镓硒硫或铜铟镓硒或铜铟镓硫薄膜太阳能电池吸收层的制备方法及镀膜设备
CN101771099A (zh) * 2008-12-30 2010-07-07 中国电子科技集团公司第十八研究所 一种铜铟镓硒半导体薄膜的制备方法
CN102034896A (zh) * 2009-09-28 2011-04-27 思阳公司 用于薄膜光伏材料硒化的自清洁大规模方法和熔炉系统
CN102024870A (zh) * 2010-04-19 2011-04-20 福建欧德生光电科技有限公司 半导体薄膜太阳能电池的制造系统和方法

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