CN103311164A - 基板载具及其硒化制程系统 - Google Patents
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Abstract
本发明公开了一种基板载具用来运载多个背电极基板至一炉腔内,每一背电极基板上形成有一前趋物层,所述炉腔用来提供一制程气体以与所述前趋物层反应形成一光电转换层在每一背电极基板上,所述基板载具包括一耐热金属架体及一第一保护层。所述耐热金属架体具有多个承载槽,用来承载所述多个背电极基板。所述第一保护层形成在所述耐热金属架体上,用来防止所述耐热金属架体发生化学反应。透过基板载具具有耐热金属架体并在耐热金属架体上形成保护层的设计,所述基板载具可具有抗高温及抗特定气体反应腐蚀的特性。
Description
技术领域
本发明涉及一种基板载具及其硒化制程系统,特别涉及一种具有耐热金属架体且在其上形成有保护层的基板载具及其硒化制程系统。
背景技术
一般来说,在铜铟镓硒(CIGS)太阳能电池的量产制程上,常见用来形成铜铟镓硒/铜铟镓硒硫(CIGSS)吸收层的方法有二,一种为四元蒸镀法,另一种则是为硒化法。
在硒化法中,用来运载太阳能电池的背电极基板至硒化炉中的基板载具通常由石英或陶瓷所组成,借此,基板载具就可以同时具有抗高温及抗特定气体(如硫气体等)反应腐蚀的特性。然而,由于石英与陶瓷价格昂贵且质脆易碎,因此,使用基板载具由石英或陶瓷所组成的设计不仅会提高太阳能电池在整体制程上所需的物料成本,同时也会容易出现基板载具在运载背电极基板的过程中因与其它制程组件相撞而产生结构碎裂的问题,进而影响太阳能电池的制程效能及造成不必要的损失。
发明内容
本发明提供一种基板载具,用来运载多个背电极基板至一炉腔内,每一背电极基板上形成有一前趋物层,所述炉腔用来提供一制程气体以与所述前趋物层反应形成一光电转换层在每一背电极基板上,所述基板载具包括一耐热金属架体及一第一保护层。所述耐热金属架体具有多个承载槽,所述多个承载槽用来承载所述多个背电极基板。所述第一保护层形成在所述耐热金属架体上,用来防止所述耐热金属架体发生化学反应。
所述第一保护层可以是一氧化层、一氮化层,或一硒化层。
所述耐热金属架体可以在对应所述第一保护层之间形成有一第二保护层,且所述第二保护层可以由钼、钛、钽,或钨所组成。
所述耐热金属架体可以由不锈钢所组成。
所述耐热金属架体可以由钼、钛、钽,或钨所组成。
本发明还提供一种硒化制程系统,包括多个背电极基板、一炉腔及一基板载具。每一背电极基板上形成有一前趋物层。所述炉腔包括一反应室、一一气体输入管线及一加热装置。所述气体输入管线用来提供一制程气体至所述反应室内。所述加热装置用来加热所述反应室以使所述制程气体与所述前趋物层反应形成一光电转换层在每一背电极基板上。所述基板载具用来运载所述多个背电极基板至所述反应室内,所述基板载具包括一耐热金属架体及一第一保护层。所述耐热金属架体具有对应所述多个背电极基板的多个承载槽,每一背电极基板分别置放在相对应的承载槽上。所述第一保护层形成在所述耐热金属架体上,用来防止所述耐热金属架体与所述制程气体发生化学反应。
所述前趋物层可以是一I B族与IIIA族化合物层。
所述制程气体可以是硒化氢或硫化氢气体。
根据上述技术方案,本发明相较于现有技术至少具有下列优点及有益效果:通过基板载具具有耐热金属架体并在耐热金属架体上形成保护层的设计,本发明所提供的基板载具不仅可同时具有抗高温及抗特定气体反应腐蚀的特性,以防止耐热金属架体出现受到高温熔化、受到制程气体的腐蚀或是与制程气体反应生成有害化合物等现象,从而提升光电转换层的形成质量。另外,在可不须使用石英或陶瓷为基板载具的架体组成材质的设计下,本发明也可达到降低太阳能电池在整体制程上所需的物料成本的目的。除此之外,本发明还可利用耐热金属架体的高强度与高刚性的金属特性以大幅地提升基板载具的整体结构强度,从而解决上述基板载具在运载背电极基板的过程中因与其它制程组件相撞而产生结构碎裂的问题,以进一步地执行自动化。
附图说明
图1为根据本发明一优选实施例的硒化制程系统的内部示意图;
图2为图1的基板载具的立体图;
图3为图2的基板载具沿剖面线A-A′的剖面图;及
图4为根据本发明另一优选实施例的基板载具的剖面图。
其中,附图标记说明如下:
10 硒化制程系统 12 背电极基板
14 炉腔 16、100 基板载具
18 前趋物层 20 反应室
22 气体输入管线 24 加热装置
26、102 耐热金属架体 28 第一保护层
30 承载槽 104 第二保护层
具体实施方式
请参照图1,图1为根据本发明一优选实施例的一硒化制程系统10的内部示意图。硒化制程系统10应用在太阳能电池的生产制程中,由图1可知,硒化制程系统10包括多个背电极基板12、一炉腔14,及一基板载具16。一般来说,背电极基板12的基板可由钙钠玻璃(soda-lime glass)所组成,而背电极基板12的背电极可由钼(Mo)所组成,每一背电极基板12上形成有一前趋物层18,其中在此实施例中,前趋物层18为包括具有IB族与IIIA族的化合物,例如铜-镓/铟(Cu-Ga/In),铜-镓-铟合金(Cu-Ga-In alloy),或铜,镓,铟迭层。至于背电极基板12与前趋物层18的相关制程步骤,其常见于现有技术中,简单地说,背电极基板12使用一溅镀机或其它技术在背电极基板12的基板上进行背电极的成型,并接着使用薄膜沉积技术或其它方式而在背电极上进行前趋物层18的成型。
炉腔14可为一般常见应用在太阳能电池的硒化制程的硒化设备,如图1所示,炉腔14包括一反应室20、一气体输入管线22,及一加热装置24。气体输入管线22用来提供一制程气体(如硒化氢(H2Se)或硫化氢(H2S)气体)至反应室20内以与前趋物层18进行化学反应,而加热装置24则是用来加热反应室20,以使反应室20的温度上升至可使制程气体与前趋物层18产生化学反应的温度(例如介于450℃至550℃),从而使制程气体分别与每一背电极基板12的前趋物层18反应形成一光电转换层,光电转换层例如可为铜铟硒(CIS)、铜铟硫(CIS)、铜铟镓硒(CIGS)或铜铟镓硒硫(CIGSS)的黄铜矿结构。至于炉腔14的其它相关组件设计,其常见于现有技术中,故于此不再赘述。
以下针对基板载具16的设计进行详细的描述,请参照图1、图2及图3,图2为图1的基板载具16的立体图,图3为图2的基板载具16沿剖面线A-A′的剖面图。基板载具16用来运载多个背电极基板12至反应室20内(如图1所示),以进行上述的硒化制程。基板载具16包括一耐热金属架体26及一第一保护层28。在此实施例中,耐热金属架体26优选地由可承受硒化制程高温(例如450℃至550℃)的金属材质所组成,如钼、钛、钽或钨等,以确保耐热金属架体26在处于反应室20内的高温环境下不会产生熔化现象。此外,如图2所示,耐热金属架体26具有对应多个背电极基板12的多个承载槽30,用来置放相对应的背电极基板12,以使背电极基板12可被平稳地运载至炉腔14的反应室20内,例如使用机械手臂或是运输带等自动化设备。第一保护层28形成在耐热金属架体26上(如图3所示),更详细地说,基板载具16可为利用一般常见的表面处理方式(如热处理、化学处理等)以在耐热金属架体26上形成一层抗特定气体反应腐蚀的保护层(也就是第一保护层28),用来在制程气体与前趋物层18进行化学反应的期间,防止耐热金属架体26受到制程气体的腐蚀或是与制程气体反应生成有害化合物的现象发生,从而避免在背电极基板12形成结晶不良或结构不同的光电转换层。
值得一提的是,耐热金属架体的抗高温设计可不限于上述实施例,请参照图4,图4为根据本发明另一优选实施例的一基板载具100的剖面图。在此实施例中所提及的组件编号与上述实施例中所提及的组件编号相同者,表示具有相似的结构及功能,于此不再赘述。基板载具100与基板载具16主要不同的地方在于组成材质的不同及保护层的增设。由图4可知,基板载具100包括一耐热金属架体102及第一保护层28,其中耐热金属架体102具有对应复数个背电极基板12的复数个承载槽30,用来置放相对应的背电极基板12。在此实施例中,耐热金属架体102在对应第一保护层28之间额外形成有一第二保护层104,第二保护层104可由耐热温度的金属材质所组成,例如钼、钛、钽或钨等,其厚度约为100~500微米,而耐热金属架体102则是由一般常见的金属材质所组成,例如不锈钢等,至于第二保护层104的形成方式,基板载具100也可利用一般常见的表面处理方式(如热处理、化学处理等)以在耐热金属架体102上形成一层抗高温的保护层(也就是第二保护层104)。如此一来,通过上述额外配置第二保护层104在耐热金属架体102上的设计(如图4所示),除了可利用第一保护层28而具有抗特定气体反应腐蚀的特性,基板载具100也可同样地具有抗高温的特性。除此之外,在此设计下,由于耐热金属架体102可不需使用可抗高温的特殊金属材质,而仅须由一般常见的金属材质组成即可,因此,本发明可更进一步地缩减太阳能电池在整体制程上所需的物料成本。
相较于现有技术,通过基板载具具有耐热金属架体并在耐热金属架体上形成保护层的设计,本发明所提供的基板载具不仅可同时具有抗高温及抗特定气体反应腐蚀的特性,以防止耐热金属架体出现受到高温熔化、受到制程气体的腐蚀或是与制程气体反应生成有害化合物等现象,从而提升光电转换层的形成质量。另外,在可不须使用石英或陶瓷为基板载具的架体组成材质的设计下,本发明也可达到降低太阳能电池在整体制程上所需的物料成本的目的。除此之外,本发明还可利用耐热金属架体的高强度与高刚性的金属特性以大幅地提升基板载具的整体结构强度,从而解决上述基板载具在运载背电极基板的过程中因与其它制程组件相撞而产生结构碎裂的问题,以进一步地执行自动化。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。说明书中所提及的第一保护层与第二保护层,仅用以表示组件的名称,并非用来限制组件数量上的上限或下限。
Claims (12)
1.一种基板载具,用来运载多个背电极基板至一炉腔内,每一背电极基板上形成有一前趋物层,所述炉腔用来提供一制程气体以与所述前趋物层反应形成一光电转换层在每一背电极基板上,其特征在于,所述基板载具包括:
一耐热金属架体,具有多个承载槽,所述多个承载槽用来承载所述多个背电极基板;及
一第一保护层,形成在所述耐热金属架体上,用来防止所述耐热金属架体发生化学反应。
2.如权利要求1所述的基板载具,其特征在于,所述第一保护层为一氧化层、一氮化层,或一硒化层。
3.如权利要求1所述的基板载具,其特征在于,所述耐热金属架体在对应所述第一保护层之间形成有一第二保护层,且所述第二保护层由钼、钛、钽,或钨所组成。
4.如权利要求3所述的基板载具,其特征在于,所述耐热金属架体由不锈钢所组成。
5.如权利要求1所述的基板载具,其特征在于,所述耐热金属架体由钼、钛、钽,或钨所组成。
6.一种硒化制程系统,包括:
多个背电极基板,每一背电极基板上形成有一前趋物层;
一炉腔,包括:
一反应室;
一气体输入管线,用来提供一制程气体至所述反应室内;及
一加热装置,用来加热所述反应室以使所述制程气体与所述前趋物层反应形成一光电转换层在每一背电极基板上;及
一基板载具,用来运载所述多个背电极基板至所述反应室内,其特征在于,所述基板载具包括:
一耐热金属架体,具有对应所述多个背电极基板的多个承载槽,每一背电极基板分别置放在相对应的承载槽上;及
一第一保护层,形成在所述耐热金属架体上,用来防止所述耐热金属架体与所述制程气体发生化学反应。
7.如权利要求6所述的硒化制程系统,其特征在于,所述第一保护层为一氧化层、一氮化层,或一硒化层。
8.如权利要求6所述的硒化制程系统,其特征在于,所述耐热金属架体在对应所述第一保护层之间形成有一第二保护层,所述第二保护层由钼、钛、钽,或钨所组成。
9.如权利要求8所述的硒化制程系统,其特征在于,所述耐热金属架体由不锈钢所组成。
10.如权利要求6述的硒化制程系统,其特征在于,所述耐热金属架体由钼、钛,或钽所组成。
11.如权利要求6所述的硒化制程系统,其特征在于,所述前趋物层为一IB族与IIIA族化合物层。
12.如权利要求6所述的硒化制程系统,其特征在于,所述制程气体为硒化氢或硫化氢气体。
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CN108735856A (zh) * | 2017-04-21 | 2018-11-02 | 隆基绿能科技股份有限公司 | 硅片检测方法及其所用的硅片承载装置 |
CN110140202A (zh) * | 2016-12-30 | 2019-08-16 | 太阳能公司 | 半导体晶片承载器 |
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US20020192494A1 (en) * | 2001-05-22 | 2002-12-19 | Tzatzov Konstantin K. | Protective system for high temperature metal alloy products |
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TWI404811B (zh) * | 2009-05-07 | 2013-08-11 | Atomic Energy Council | 金屬氮氧化物薄膜結構之製作方法 |
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US20020192494A1 (en) * | 2001-05-22 | 2002-12-19 | Tzatzov Konstantin K. | Protective system for high temperature metal alloy products |
US20080095938A1 (en) * | 2006-10-13 | 2008-04-24 | Basol Bulent M | Reel-to-reel reaction of precursor film to form solar cell absorber |
CN102347211A (zh) * | 2010-07-23 | 2012-02-08 | 思阳公司 | 保持用于热处理的多个平面基板的方法和设备 |
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CN110140202A (zh) * | 2016-12-30 | 2019-08-16 | 太阳能公司 | 半导体晶片承载器 |
CN110140202B (zh) * | 2016-12-30 | 2023-02-28 | 迈可晟太阳能有限公司 | 半导体晶片承载器 |
CN108735856A (zh) * | 2017-04-21 | 2018-11-02 | 隆基绿能科技股份有限公司 | 硅片检测方法及其所用的硅片承载装置 |
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