TW201338071A - 基板載具及其硒化製程系統 - Google Patents
基板載具及其硒化製程系統 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims abstract description 39
- 239000011241 protective layer Substances 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 239000002243 precursor Substances 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical group [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims 1
- 229910000058 selane Inorganic materials 0.000 claims 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
- H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
- H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
一種基板載具用以運載複數個背電極基板至一爐腔內,每一背電極基板上形成有一前趨物層,爐腔用來提供一製程氣體以與前趨物層反應形成一光電轉換層於每一背電極基板上,基板載具包含一耐熱金屬架體以及一第一保護層。耐熱金屬架體具有複數個承載槽,複數個承載槽用以承載複數個背電極基板。第一保護層形成於耐熱金屬架體上,用來防止耐熱金屬架體發生化學反應。
Description
本發明關於一種基板載具及其硒化製程系統,尤指一種具有耐熱金屬架體且於其上形成有保護層之基板載具及其硒化製程系統。
一般而言,在銅銦鎵硒(CIGS)太陽能電池的量產製程上,常見用來形成銅銦鎵硒/銅銦鎵硒硫(CIGSS)吸收層的方法有二,一種為四元蒸鍍法,另一種則是為硒化法。
在硒化法中,用來運載太陽能電池之背電極基板至硒化爐中的基板載具通常係由石英或陶瓷所組成,藉此,基板載具即可同時具有抗高溫及抗特定氣體(如硫氣體等)反應腐蝕之特性。然而,由於石英與陶瓷價格昂貴且質脆易碎,因此,採用基板載具由石英或陶瓷所組成之設計不僅會提高太陽能電池在整體製程上所需的物料成本,同時也會容易出現基板載具在運載背電極基板的過程中因與其他製程元件相撞而產生結構碎裂的問題,進而影響太陽能電池之製程效能以及造成不必要的損失。
因此,本發明之目的之一在於提供一種具有耐熱金屬架體且於其上形成有保護層之基板載具及其硒化製程系統,藉以解決上述之問題。
本發明係揭露一種基板載具,用以運載複數個背電極基板至一爐腔內,每一背電極基板上形成有一前趨物層,爐腔用來提供一製程氣體以與前趨物層反應形成一光電轉換層於每一背電極基板上,基板載具包含一耐熱金屬架體以及一第一保護層。耐熱金屬架體具複數個承載槽,複數個承載槽用以承載複數個背電極基板。第一保護層形成於耐熱金屬架體上,用來防止耐熱金屬架體發生化學反應。
本發明另揭露一種硒化製程系統,包含複數個背電極基板、一爐腔,以及一基板載具。每一背電極基板上形成有一前趨物層。爐腔包含一反應室、一氣體輸入管線,以及一加熱裝置。氣體輸入管線用來提供一製程氣體至反應室內。加熱裝置用來加熱反應室以使製程氣體與該前趨物層反應形成一光電轉換層於每一背電極基板上。基板載具用來運載複數個背電極基板至反應室內,基板載具包含一耐熱金屬架體以及一第一保護層。耐熱金屬架體具有對應複數個背電極基板之複數個承載槽,每一背電極基板分別置放於相對應之承載槽上。第一保護層形成於耐熱金屬架體上,用來防止耐熱金屬架體與製程氣體發生化學反應。
綜上所述,透過基板載具具有耐熱金屬架體並在耐熱金屬架體上形成保護層的設計,本發明所提供之基板載具不僅可同時具有抗高溫及抗特定氣體反應腐蝕之特性,藉以防止耐熱金屬架體受到高溫熔化、受到製程氣體之腐蝕或是與製程氣體反應生成有害化合物等現象,從而提昇光電轉換層的形成品質。另外,在可不須採用石英或陶瓷為基板載具之架體組成材質的設計下,本發明亦可達到降低太陽能電池在整體製程上所需之物料成本的目的。除此之外,本發明亦可利用耐熱金屬架體之高強度與高剛性的金屬特性以大幅地提昇基板載具之整體結構強度,從而解決上述基板載具在運載背電極基板的過程中因與其他製程元件相撞而產生結構碎裂的問題。
關於本發明之優點與精神可以藉由以下的實施方式及所附圖式得到進一步的瞭解。
請參閱第1圖,其為根據本發明一較佳實施例之一硒化製程系統10之內部示意圖。硒化製程系統10係應用於太陽能電池之生產製程中,由第1圖可知,硒化製程系統10包含複數個背電極基板12、一爐腔14,以及一基板載具16。一般來說,背電極基板12之基板係可由鈣鈉玻璃(soda-lime glass)所組成,而背電極基板12之背電極係可由鉬(Mo)所組成,每一背電極基板12上形成有一前趨物層18,其中在此實施例中,前趨物層18係為包括具有ⅠB族與ⅢA族之化合物,例如銅-鎵/銦(Cu-Ga/In),銅-鎵-銦合金(Cu-Ga-In alloy),或銅,鎵,銦疊層。至於背電極基板12與前趨物層18之相關製程步驟,其係常見於先前技術中,簡言之,背電極基板12係使用一濺鍍機或其他技術在背電極基板12之基板上進行背電極之成型,並接著使用薄膜沉積技術或其他方式而在背電極上進行前趨物層18之成型。
爐腔14係可為一般常見應用於太陽能電池之硒化製程的硒化設備,如第1圖所示,爐腔14包含一反應室20、一氣體輸入管線22,以及一加熱裝置24。氣體輸入管線22用來提供一製程氣體(如硒化氫(H2Se)或硫化氫(H2S)氣體)至反應室20內以與前趨物層18進行化學反應,而加熱裝置24則是用來加熱反應室20,藉以使反應室20之溫度上升至可使製程氣體與前趨物層18產生化學反應之溫度(例如介於450℃至550℃),從而使製程氣體分別與每一背電極基板12之前趨物層18反應形成一光電轉換層,光電轉換層例如可為銅銦硒(CIS)、銅銦硫(CIS)、銅銦鎵硒(CIGS)或銅銦鎵硒硫(CIGSS)之黃銅礦結構。至於爐腔14之其他相關元件設計,其係常見於先前技術中,故於此不再贅述。
以下係針對基板載具16之設計進行詳細之描述,請參閱第1圖、第2圖以及第3圖,第2圖為第1圖之基板載具16之立體圖,第3圖為第2圖之基板載具16沿剖面線A-A'之剖面圖。基板載具16係用來運載複數個背電極基板12至反應室20內(如第1圖所示),以進行上述之硒化製程。基板載具16包含一耐熱金屬架體26以及一第一保護層28。在此實施例中,耐熱金屬架體26係較佳地由可承受硒化製程高溫(例如450℃至550℃)之金屬材質所組成,如鉬、鈦、鉭或鎢等,藉以確保耐熱金屬架體26在處於反應室20內之高溫環境下不會產生熔化現象。此外,如第2圖所示,耐熱金屬架體26具有對應複數個背電極基板12之複數個承載槽30,用來置放相對應之背電極基板12,藉以使背電極基板12可被平穩地運載至爐腔14之反應室20內,例如使用機械手臂或是運輸帶等自動化設備。第一保護層28係形成於耐熱金屬架體26上(如第3圖所示),更詳細地說,基板載具16係可為利用一般常見之表面處理方式(如熱處理、化學處理等)以在耐熱金屬架體26上形成一層抗特定氣體反應腐蝕的保護層(即第一保護層28),用以在製程氣體與前趨物層18進行化學反應的期間,防止耐熱金屬架體26受到製程氣體之腐蝕或是與製程氣體反應生成有害化合物的現象發生,從而避免在背電極基板12形成結晶不良或結構不同之光電轉換層。
值得一提的是,耐熱金屬架體之抗高溫設計係可不限於上述實施例,請參閱第4圖,其為根據本發明另一實施例之一基板載具100之剖面圖。於此實施例中所提及之元件編號與上述實施例中所提及之元件編號相同者,表示具有相似之結構及功能,於此不再贅述。基板載具100與基板載具16主要不同之處在於組成材質的不同以及保護層之增設。由第4圖可知,基板載具100包含一耐熱金屬架體102以及第一保護層28,其中耐熱金屬架體102具有對應複數個背電極基板12之複數個承載槽30,用來置放相對應之背電極基板12。在此實施例中,耐熱金屬架體102於對應第一保護層28之間額外形成有一第二保護層104,第二保護層104係可由耐熱溫度之金屬材質所組成,例如鉬、鈦、鉭或鎢等,其厚度約為100~500微米,而耐熱金屬架體102則是由一般常見之金屬材質所組成,例如不銹鋼等,至於第二保護層104之形成方式,基板載具100亦可利用一般常見之表面處理方式(如熱處理、化學處理等)以在耐熱金屬架體102上形成一層抗高溫的保護層(即第二保護層104)。如此一來,透過上述額外配置第二保護層104於耐熱金屬架體102上的設計(如第4圖所示),除了可利用第一保護層28而具有抗特定氣體反應腐蝕之特性,基板載具100亦可同樣地具有抗高溫之特性。除此之外,在此設計下,由於耐熱金屬架體102可不需採用可抗高溫之特殊金屬材質,而僅須由一般常見之金屬材質組成即可,因此,本發明可更進一步地縮減太陽能電池在整體製程上所需的物料成本。
相較於先前技術,透過基板載具具有耐熱金屬架體並在耐熱金屬架體上形成保護層的設計,本發明所提供之基板載具不僅可同時具有抗高溫及抗特定氣體反應腐蝕之特性,藉以防止耐熱金屬架體出現受到高溫熔化、受到製程氣體之腐蝕或是與製程氣體反應生成有害化合物等現象,從而提昇光電轉換層的形成品質。另外,在可不須採用石英或陶瓷為基板載具之架體組成材質的設計下,本發明亦可達到降低太陽能電池在整體製程上所需之物料成本的目的。除此之外,本發明亦可利用耐熱金屬架體之高強度與高剛性的金屬特性以大幅地提昇基板載具之整體結構強度,從而解決上述基板載具在運載背電極基板的過程中因與其他製程元件相撞而產生結構碎裂的問題,以進一步地執行自動化。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。說明書中所提及之第一保護層與第二保護層,僅用以表示元件的名稱,並非用來限制元件數量上的上限或下限。
10...硒化製程系統
12...背電極基板
14...爐腔
16、100...基板載具
18...前趨物層
20...反應室
22...氣體輸入管線
24...加熱裝置
26、102...耐熱金屬架體
28...第一保護層
30...承載槽
104...第二保護層
第1圖為根據本發明一較佳實施例之硒化製程系統之內部示意圖。
第2圖為第1圖之基板載具之立體圖。
第3圖為第2圖之基板載具沿剖面線A-A'之剖面圖。
第4圖為根據本發明另一實施例之基板載具之剖面圖。
16...基板載具
26...耐熱金屬架體
28...第一保護層
30...承載槽
Claims (12)
- 一種基板載具,用以運載複數個背電極基板至一爐腔內,每一背電極基板上形成有一前趨物層,該爐腔用來提供一製程氣體以與該前趨物層反應形成一光電轉換層於每一背電極基板上,該基板載具包含:一耐熱金屬架體,具有複數個承載槽,該複數個承載槽用以承載該複數個背電極基板;以及一第一保護層,形成於該耐熱金屬架體上,用來防止該耐熱金屬架體發生化學反應。
- 如請求項1所述之基板載具,其中該第一保護層係為一氧化層、一氮化層或一硒化層。
- 如請求項1所述之基板載具,其中該耐熱金屬架體於對應該第一保護層之間形成有一第二保護層,且該第二保護層係由鉬、鈦、鉭或鎢所組成。
- 如請求項3所述之基板載具,其中該耐熱金屬架體係由不銹鋼所組成。
- 如請求項1所述之基板載具,其中該耐熱金屬架體係由鉬、鈦,、鉭或鎢所組成。
- 一種硒化製程系統,包含:複數個背電極基板,每一背電極基板上形成有一前趨物層;一爐腔,包含:一反應室;一氣體輸入管線,用來提供一製程氣體至該反應室內;以及一加熱裝置,用來加熱該反應室以使該製程氣體與該前趨物層反應形成一光電轉換層於每一背電極基板上;以及一基板載具,用來運載該複數個背電極基板至該反應室內,該基板載具包含:一耐熱金屬架體,具有對應該複數個背電極基板之複數個承載槽,每一背電極基板分別置放於相對應之承載槽上;以及一第一保護層,形成於該耐熱金屬架體上,用來防止該耐熱金屬架體與該製程氣體發生化學反應。
- 如請求項6所述之硒化製程系統,其中該第一保護層係為一氧化層、一氮化層或一硒化層。
- 如請求項6所述之硒化製程系統,其中該耐熱金屬架體於對應該第一保護層之間形成有一第二保護層,該第二保護層係由鉬、鈦、鉭或鎢所組成。
- 如請求項8所述之硒化製程系統,其中該耐熱金屬架體係由不銹鋼所組成。
- 如請求項6述之硒化製程系統,其中該耐熱金屬架體係由鉬、鈦,或鉭所組成。
- 如請求項6所述之硒化製程系統,其中該前趨物層係為一ⅠB族與ⅢA族化合物層。
- 如請求項6所述之硒化製程系統,其中該製程氣體係為硒化氫或硫化氫氣體。
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