CN102034896A - 用于薄膜光伏材料硒化的自清洁大规模方法和熔炉系统 - Google Patents
用于薄膜光伏材料硒化的自清洁大规模方法和熔炉系统 Download PDFInfo
- Publication number
- CN102034896A CN102034896A CN2010105039917A CN201010503991A CN102034896A CN 102034896 A CN102034896 A CN 102034896A CN 2010105039917 A CN2010105039917 A CN 2010105039917A CN 201010503991 A CN201010503991 A CN 201010503991A CN 102034896 A CN102034896 A CN 102034896A
- Authority
- CN
- China
- Prior art keywords
- temperature
- smelting furnace
- end cap
- copper
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 138
- 239000000463 material Substances 0.000 title claims abstract description 121
- 238000004140 cleaning Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 title abstract description 6
- 150000003346 selenoethers Chemical class 0.000 claims abstract description 49
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000010949 copper Substances 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 229910052738 indium Inorganic materials 0.000 claims abstract description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000012159 carrier gas Substances 0.000 claims abstract description 9
- 230000005484 gravity Effects 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 83
- 238000003723 Smelting Methods 0.000 claims description 67
- 230000008569 process Effects 0.000 claims description 65
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 46
- 239000011669 selenium Substances 0.000 claims description 44
- 229910052711 selenium Inorganic materials 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 25
- 238000000354 decomposition reaction Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 43
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 22
- 239000007789 gas Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000003708 ampul Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000005361 soda-lime glass Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910000846 In alloy Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 3
- 230000001976 improved effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/568,656 | 2009-09-28 | ||
US12/568,656 US8053274B2 (en) | 2008-09-30 | 2009-09-28 | Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102034896A true CN102034896A (zh) | 2011-04-27 |
CN102034896B CN102034896B (zh) | 2015-03-11 |
Family
ID=43887504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010503991.7A Expired - Fee Related CN102034896B (zh) | 2009-09-28 | 2010-09-28 | 利用自清洁熔炉制造铜铟二硒化物半导体膜的方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102034896B (zh) |
TW (1) | TWI523119B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103022243A (zh) * | 2011-09-27 | 2013-04-03 | 绿阳光电股份有限公司 | 薄膜太阳能电池制造系统 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1072663A (zh) * | 1987-07-01 | 1993-06-02 | Ppg工业公司 | 加热容器的盖结构 |
US20050048733A1 (en) * | 2003-09-03 | 2005-03-03 | Ashton Gary R. | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof |
CN101095240A (zh) * | 2004-12-28 | 2007-12-26 | 昭和砚壳石油株式会社 | 用于形成cis型薄膜太阳能电池的光吸收层的方法 |
-
2010
- 2010-09-28 TW TW099132906A patent/TWI523119B/zh not_active IP Right Cessation
- 2010-09-28 CN CN201010503991.7A patent/CN102034896B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1072663A (zh) * | 1987-07-01 | 1993-06-02 | Ppg工业公司 | 加热容器的盖结构 |
US20050048733A1 (en) * | 2003-09-03 | 2005-03-03 | Ashton Gary R. | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof |
CN101095240A (zh) * | 2004-12-28 | 2007-12-26 | 昭和砚壳石油株式会社 | 用于形成cis型薄膜太阳能电池的光吸收层的方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103022243A (zh) * | 2011-09-27 | 2013-04-03 | 绿阳光电股份有限公司 | 薄膜太阳能电池制造系统 |
Also Published As
Publication number | Publication date |
---|---|
CN102034896B (zh) | 2015-03-11 |
TW201123314A (en) | 2011-07-01 |
TWI523119B (zh) | 2016-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8053274B2 (en) | Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials | |
US8377736B2 (en) | System and method for transferring substrates in large scale processing of CIGS and/or CIS devices | |
US8318531B2 (en) | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates | |
JP6521336B2 (ja) | マルチソース堆積に基づくペロブスカイト膜の製造システムおよび製造方法 | |
TWI488313B (zh) | 用於大規模處理覆蓋玻璃基板的基於cis和/或cigs的薄膜的熱管理和方法 | |
TWI521729B (zh) | 用於製造銅銦二硒化物半導體薄膜的方法 | |
TW201428992A (zh) | 製造太陽能電池的裝置及方法 | |
KR101284760B1 (ko) | 태양전지 제조용 고속 열처리 시스템 및 이를 이용한 열처리 방법 | |
CN102034896B (zh) | 利用自清洁熔炉制造铜铟二硒化物半导体膜的方法 | |
US8632851B1 (en) | Method of forming an I-II-VI2 compound semiconductor thin film of chalcopyrite structure | |
US8372684B1 (en) | Method and system for selenization in fabricating CIGS/CIS solar cells | |
WO2011135420A1 (en) | Process for the production of a compound semiconductor layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: DEVELOPMENT EXPERT COMPANY Free format text: FORMER OWNER: CM MANUFACTURING INC. Effective date: 20150206 Owner name: HETF SOLAR INC. Free format text: FORMER OWNER: DEVELOPMENT EXPERT COMPANY Effective date: 20150206 |
|
C14 | Grant of patent or utility model | ||
C41 | Transfer of patent application or patent right or utility model | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: California, USA Applicant after: STION Corp. Address before: California, USA Applicant before: HETF solar Address after: California, USA Applicant after: CM manufacturing Co. Address before: American California Applicant before: Stion Corp. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: HETF SOLAR INC. TO: STION CORP. Free format text: CORRECT: APPLICANT; FROM: STION CORP. TO: CM MANUFACTURING INC. |
|
GR01 | Patent grant | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150206 Address after: California, USA Applicant after: HETF solar Address before: California, USA Applicant before: Development Specialist Effective date of registration: 20150206 Address after: California, USA Applicant after: Development Specialist Address before: California, USA Applicant before: CM manufacturing Co. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150311 Termination date: 20160928 |
|
CF01 | Termination of patent right due to non-payment of annual fee |