CN102738261B - 衬底处理装置、太阳能电池的制造方法及衬底的制造方法 - Google Patents
衬底处理装置、太阳能电池的制造方法及衬底的制造方法 Download PDFInfo
- Publication number
- CN102738261B CN102738261B CN201210104813.6A CN201210104813A CN102738261B CN 102738261 B CN102738261 B CN 102738261B CN 201210104813 A CN201210104813 A CN 201210104813A CN 102738261 B CN102738261 B CN 102738261B
- Authority
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- China
- Prior art keywords
- reaction tube
- process chamber
- film
- elemental gas
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 65
- 239000007769 metal material Substances 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 26
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 24
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 20
- 239000011593 sulfur Substances 0.000 claims abstract description 20
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 17
- 239000010935 stainless steel Substances 0.000 claims abstract description 17
- 238000011282 treatment Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims abstract description 8
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005987 sulfurization reaction Methods 0.000 claims abstract 3
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 239000005001 laminate film Substances 0.000 claims 6
- 230000008676 import Effects 0.000 claims 3
- 239000011669 selenium Substances 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 239000010453 quartz Substances 0.000 abstract description 14
- 229910052711 selenium Inorganic materials 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 description 36
- 238000000576 coating method Methods 0.000 description 36
- 239000007789 gas Substances 0.000 description 34
- 239000011521 glass Substances 0.000 description 15
- 238000007789 sealing Methods 0.000 description 15
- 239000010949 copper Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 150000003346 selenoethers Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010667 large scale reaction Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-086642 | 2011-04-08 | ||
| JP2011086642A JP2012222157A (ja) | 2011-04-08 | 2011-04-08 | 基板処理装置、及び、太陽電池の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102738261A CN102738261A (zh) | 2012-10-17 |
| CN102738261B true CN102738261B (zh) | 2015-05-27 |
Family
ID=46966423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210104813.6A Active CN102738261B (zh) | 2011-04-08 | 2012-04-06 | 衬底处理装置、太阳能电池的制造方法及衬底的制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120258566A1 (enExample) |
| JP (1) | JP2012222157A (enExample) |
| KR (2) | KR20120115091A (enExample) |
| CN (1) | CN102738261B (enExample) |
| TW (1) | TWI462322B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015106693B4 (de) * | 2015-04-29 | 2024-11-28 | Infineon Technologies Austria Ag | Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur |
| JP5741921B2 (ja) * | 2011-04-08 | 2015-07-01 | 株式会社日立国際電気 | 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法 |
| JP6068633B2 (ja) * | 2013-05-31 | 2017-01-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び炉口蓋体 |
| CN105531808A (zh) * | 2013-09-10 | 2016-04-27 | 泰拉半导体株式会社 | 热处理装置的腔室及其制造方法 |
| CN104677116B (zh) * | 2014-12-30 | 2017-09-19 | 湖南顶立科技有限公司 | 一种自膨胀式超高温加热器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2855458B2 (ja) * | 1989-12-15 | 1999-02-10 | 東芝セラミックス株式会社 | 半導体用処理部材 |
| US5273911A (en) * | 1991-03-07 | 1993-12-28 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a thin-film solar cell |
| US5680013A (en) * | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
| JP4380211B2 (ja) * | 2002-08-30 | 2009-12-09 | 東ソー株式会社 | 石英ガラス部品及びその製造方法並びにそれを用いた装置 |
| WO2004027849A1 (ja) * | 2002-09-20 | 2004-04-01 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
| JP2010509779A (ja) * | 2006-11-10 | 2010-03-25 | ソロパワー、インコーポレイテッド | 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応 |
| US20080210168A1 (en) * | 2007-01-18 | 2008-09-04 | May Su | Single chamber, multiple tube high efficiency vertical furnace system |
| JP5154814B2 (ja) * | 2007-03-29 | 2013-02-27 | 東ソー・クォーツ株式会社 | 石英ガラス材料の製造方法 |
| WO2010060646A1 (de) * | 2008-11-28 | 2010-06-03 | Volker Probst | Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten |
| EP2144026B1 (de) * | 2008-06-20 | 2016-04-13 | Volker Probst | Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern |
| WO2011031521A2 (en) * | 2009-08-27 | 2011-03-17 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
-
2011
- 2011-04-08 JP JP2011086642A patent/JP2012222157A/ja active Pending
-
2012
- 2012-03-05 KR KR1020120022171A patent/KR20120115091A/ko not_active Ceased
- 2012-03-22 US US13/427,419 patent/US20120258566A1/en not_active Abandoned
- 2012-03-28 TW TW101110714A patent/TWI462322B/zh active
- 2012-04-06 CN CN201210104813.6A patent/CN102738261B/zh active Active
-
2014
- 2014-11-14 KR KR20140158573A patent/KR20150002556A/ko not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120115091A (ko) | 2012-10-17 |
| TWI462322B (zh) | 2014-11-21 |
| TW201251100A (en) | 2012-12-16 |
| KR20150002556A (ko) | 2015-01-07 |
| JP2012222157A (ja) | 2012-11-12 |
| US20120258566A1 (en) | 2012-10-11 |
| CN102738261A (zh) | 2012-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181130 Address after: Tokyo, Japan, Japan Patentee after: International Electric Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Kunisai Electric Corp. |