JP2012178592A5 - - Google Patents
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- JP2012178592A5 JP2012178592A5 JP2012105770A JP2012105770A JP2012178592A5 JP 2012178592 A5 JP2012178592 A5 JP 2012178592A5 JP 2012105770 A JP2012105770 A JP 2012105770A JP 2012105770 A JP2012105770 A JP 2012105770A JP 2012178592 A5 JP2012178592 A5 JP 2012178592A5
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/961,477 US6686604B2 (en) | 2001-09-21 | 2001-09-21 | Multiple operating voltage vertical replacement-gate (VRG) transistor |
US09/961477 | 2001-09-21 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002274695A Division JP5179693B2 (ja) | 2001-09-21 | 2002-09-20 | 垂直トランジスタを有する集積回路構造及び垂直トランジスタを有する半導体デバイスを製造する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012178592A JP2012178592A (ja) | 2012-09-13 |
JP2012178592A5 true JP2012178592A5 (ja) | 2012-10-25 |
Family
ID=25504521
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002274695A Expired - Fee Related JP5179693B2 (ja) | 2001-09-21 | 2002-09-20 | 垂直トランジスタを有する集積回路構造及び垂直トランジスタを有する半導体デバイスを製造する方法 |
JP2012105770A Pending JP2012178592A (ja) | 2001-09-21 | 2012-05-07 | 多動作電圧垂直置換ゲート(vrg)トランジスタ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002274695A Expired - Fee Related JP5179693B2 (ja) | 2001-09-21 | 2002-09-20 | 垂直トランジスタを有する集積回路構造及び垂直トランジスタを有する半導体デバイスを製造する方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6686604B2 (ja) |
JP (2) | JP5179693B2 (ja) |
KR (1) | KR100908991B1 (ja) |
GB (1) | GB2382719B (ja) |
TW (1) | TW578304B (ja) |
Families Citing this family (39)
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JP2006310651A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置の製造方法 |
KR100701693B1 (ko) * | 2005-05-26 | 2007-03-29 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
US7504685B2 (en) * | 2005-06-28 | 2009-03-17 | Micron Technology, Inc. | Oxide epitaxial isolation |
US7790544B2 (en) | 2006-03-24 | 2010-09-07 | Micron Technology, Inc. | Method of fabricating different gate oxides for different transistors in an integrated circuit |
US7795673B2 (en) * | 2007-07-23 | 2010-09-14 | Macronix International Co., Ltd. | Vertical non-volatile memory |
JP5623005B2 (ja) * | 2008-02-01 | 2014-11-12 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及びその製造方法 |
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JP2010056215A (ja) * | 2008-08-27 | 2010-03-11 | Nec Electronics Corp | 縦型電界効果トランジスタを備える半導体装置及びその製造方法 |
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KR101878006B1 (ko) * | 2011-01-24 | 2018-07-12 | 아이엠이씨 브이제트더블유 | 수직 메모리 디바이스 및 그것의 제조 방법 |
US9012278B2 (en) * | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
US9640228B2 (en) * | 2014-12-12 | 2017-05-02 | Globalfoundries Inc. | CMOS device with reading circuit |
TWI612664B (zh) * | 2015-05-26 | 2018-01-21 | 旺宏電子股份有限公司 | 半導體元件 |
US9627531B1 (en) | 2015-10-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Field-effect transistor with dual vertical gates |
US9882047B2 (en) * | 2016-02-01 | 2018-01-30 | International Business Machines Corporation | Self-aligned replacement metal gate spacerless vertical field effect transistor |
US9530866B1 (en) | 2016-04-13 | 2016-12-27 | Globalfoundries Inc. | Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts |
US9799751B1 (en) | 2016-04-19 | 2017-10-24 | Globalfoundries Inc. | Methods of forming a gate structure on a vertical transistor device |
US9640636B1 (en) | 2016-06-02 | 2017-05-02 | Globalfoundries Inc. | Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device |
US10170616B2 (en) | 2016-09-19 | 2019-01-01 | Globalfoundries Inc. | Methods of forming a vertical transistor device |
US10347745B2 (en) | 2016-09-19 | 2019-07-09 | Globalfoundries Inc. | Methods of forming bottom and top source/drain regions on a vertical transistor device |
US9859421B1 (en) | 2016-09-21 | 2018-01-02 | International Business Machines Corporation | Vertical field effect transistor with subway etch replacement metal gate |
US9859172B1 (en) | 2016-09-29 | 2018-01-02 | International Business Machines Corporation | Bipolar transistor compatible with vertical FET fabrication |
US9882025B1 (en) | 2016-09-30 | 2018-01-30 | Globalfoundries Inc. | Methods of simultaneously forming bottom and top spacers on a vertical transistor device |
US9966456B1 (en) | 2016-11-08 | 2018-05-08 | Globalfoundries Inc. | Methods of forming gate electrodes on a vertical transistor device |
US9935018B1 (en) | 2017-02-17 | 2018-04-03 | Globalfoundries Inc. | Methods of forming vertical transistor devices with different effective gate lengths |
US10229999B2 (en) | 2017-02-28 | 2019-03-12 | Globalfoundries Inc. | Methods of forming upper source/drain regions on a vertical transistor device |
US10014370B1 (en) | 2017-04-19 | 2018-07-03 | Globalfoundries Inc. | Air gap adjacent a bottom source/drain region of vertical transistor device |
US10811507B2 (en) | 2017-09-20 | 2020-10-20 | International Business Machines Corporation | Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
US10332972B2 (en) * | 2017-11-20 | 2019-06-25 | International Business Machines Corporation | Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface |
US10916638B2 (en) * | 2018-09-18 | 2021-02-09 | International Business Machines Corporation | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance |
US11043564B2 (en) * | 2019-03-15 | 2021-06-22 | Samsung Electronics Co., Ltd. | Integrated circuit devices including transistors having variable channel pitches |
US11688737B2 (en) * | 2020-02-05 | 2023-06-27 | Samsung Electronics Co., Ltd. | Integrated circuit devices including vertical field-effect transistors |
TWI748870B (zh) * | 2020-03-24 | 2021-12-01 | 王振志 | 邏輯閘及數位電路 |
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US4455565A (en) | 1980-02-22 | 1984-06-19 | Rca Corporation | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
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US6133164A (en) | 1999-02-23 | 2000-10-17 | Vantis Corporation | Fabrication of oxide regions having multiple thicknesses using minimized number of thermal cycles |
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US6300199B1 (en) * | 2000-05-24 | 2001-10-09 | Micron Technology, Inc. | Method of defining at least two different field effect transistor channel lengths using differently angled sidewall segments of a channel defining layer |
US6436770B1 (en) * | 2000-11-27 | 2002-08-20 | Chartered Semiconductor Manufacturing Ltd. | Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantation |
US6387758B1 (en) * | 2001-03-26 | 2002-05-14 | Advanced Micro Devices, Inc. | Method of making vertical field effect transistor having channel length determined by the thickness of a layer of dummy material |
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2001
- 2001-09-21 US US09/961,477 patent/US6686604B2/en not_active Expired - Lifetime
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2002
- 2002-08-22 TW TW091119024A patent/TW578304B/zh not_active IP Right Cessation
- 2002-08-30 GB GB0220206A patent/GB2382719B/en not_active Expired - Fee Related
- 2002-09-20 JP JP2002274695A patent/JP5179693B2/ja not_active Expired - Fee Related
- 2002-09-23 KR KR1020020057533A patent/KR100908991B1/ko active IP Right Grant
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2003
- 2003-10-14 US US10/684,713 patent/US7056783B2/en not_active Expired - Lifetime
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2012
- 2012-05-07 JP JP2012105770A patent/JP2012178592A/ja active Pending