GB2382719B - Multiple operating voltage vertical replacement-gate (VRG) transistor - Google Patents
Multiple operating voltage vertical replacement-gate (VRG) transistorInfo
- Publication number
- GB2382719B GB2382719B GB0220206A GB0220206A GB2382719B GB 2382719 B GB2382719 B GB 2382719B GB 0220206 A GB0220206 A GB 0220206A GB 0220206 A GB0220206 A GB 0220206A GB 2382719 B GB2382719 B GB 2382719B
- Authority
- GB
- United Kingdom
- Prior art keywords
- vrg
- transistor
- gate
- operating voltage
- multiple operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/961,477 US6686604B2 (en) | 2001-09-21 | 2001-09-21 | Multiple operating voltage vertical replacement-gate (VRG) transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0220206D0 GB0220206D0 (en) | 2002-10-09 |
GB2382719A GB2382719A (en) | 2003-06-04 |
GB2382719B true GB2382719B (en) | 2005-09-21 |
Family
ID=25504521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0220206A Expired - Fee Related GB2382719B (en) | 2001-09-21 | 2002-08-30 | Multiple operating voltage vertical replacement-gate (VRG) transistor |
Country Status (5)
Country | Link |
---|---|
US (2) | US6686604B2 (ja) |
JP (2) | JP5179693B2 (ja) |
KR (1) | KR100908991B1 (ja) |
GB (1) | GB2382719B (ja) |
TW (1) | TW578304B (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1063697B1 (en) * | 1999-06-18 | 2003-03-12 | Lucent Technologies Inc. | A process for fabricating a CMOS integrated circuit having vertical transistors |
US6773994B2 (en) * | 2001-12-26 | 2004-08-10 | Agere Systems Inc. | CMOS vertical replacement gate (VRG) transistors |
US6632712B1 (en) * | 2002-10-03 | 2003-10-14 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating variable length vertical transistors |
US7372091B2 (en) * | 2004-01-27 | 2008-05-13 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components |
US7205657B2 (en) * | 2004-02-12 | 2007-04-17 | International Rectifier Corporation | Complimentary lateral nitride transistors |
US7667250B2 (en) * | 2004-07-16 | 2010-02-23 | Aptina Imaging Corporation | Vertical gate device for an image sensor and method of forming the same |
JP2006310651A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置の製造方法 |
KR100701693B1 (ko) * | 2005-05-26 | 2007-03-29 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
US7504685B2 (en) * | 2005-06-28 | 2009-03-17 | Micron Technology, Inc. | Oxide epitaxial isolation |
US7790544B2 (en) | 2006-03-24 | 2010-09-07 | Micron Technology, Inc. | Method of fabricating different gate oxides for different transistors in an integrated circuit |
US7795673B2 (en) * | 2007-07-23 | 2010-09-14 | Macronix International Co., Ltd. | Vertical non-volatile memory |
JP5623005B2 (ja) * | 2008-02-01 | 2014-11-12 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及びその製造方法 |
FR2931324B1 (fr) * | 2008-05-16 | 2010-07-30 | Trustseed Sas | Procede et dispositif de prevention de defaillance |
JP2010056215A (ja) * | 2008-08-27 | 2010-03-11 | Nec Electronics Corp | 縦型電界効果トランジスタを備える半導体装置及びその製造方法 |
JP5601974B2 (ja) * | 2010-01-19 | 2014-10-08 | パナソニック株式会社 | 半導体装置及びその製造方法 |
KR101878006B1 (ko) * | 2011-01-24 | 2018-07-12 | 아이엠이씨 브이제트더블유 | 수직 메모리 디바이스 및 그것의 제조 방법 |
US9012278B2 (en) * | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
US9640228B2 (en) * | 2014-12-12 | 2017-05-02 | Globalfoundries Inc. | CMOS device with reading circuit |
TWI612664B (zh) * | 2015-05-26 | 2018-01-21 | 旺宏電子股份有限公司 | 半導體元件 |
US9627531B1 (en) | 2015-10-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Field-effect transistor with dual vertical gates |
US9882047B2 (en) * | 2016-02-01 | 2018-01-30 | International Business Machines Corporation | Self-aligned replacement metal gate spacerless vertical field effect transistor |
US9530866B1 (en) | 2016-04-13 | 2016-12-27 | Globalfoundries Inc. | Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts |
US9799751B1 (en) | 2016-04-19 | 2017-10-24 | Globalfoundries Inc. | Methods of forming a gate structure on a vertical transistor device |
US9640636B1 (en) | 2016-06-02 | 2017-05-02 | Globalfoundries Inc. | Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device |
US10170616B2 (en) | 2016-09-19 | 2019-01-01 | Globalfoundries Inc. | Methods of forming a vertical transistor device |
US10347745B2 (en) | 2016-09-19 | 2019-07-09 | Globalfoundries Inc. | Methods of forming bottom and top source/drain regions on a vertical transistor device |
US9859421B1 (en) | 2016-09-21 | 2018-01-02 | International Business Machines Corporation | Vertical field effect transistor with subway etch replacement metal gate |
US9859172B1 (en) | 2016-09-29 | 2018-01-02 | International Business Machines Corporation | Bipolar transistor compatible with vertical FET fabrication |
US9882025B1 (en) | 2016-09-30 | 2018-01-30 | Globalfoundries Inc. | Methods of simultaneously forming bottom and top spacers on a vertical transistor device |
US9966456B1 (en) | 2016-11-08 | 2018-05-08 | Globalfoundries Inc. | Methods of forming gate electrodes on a vertical transistor device |
US9935018B1 (en) | 2017-02-17 | 2018-04-03 | Globalfoundries Inc. | Methods of forming vertical transistor devices with different effective gate lengths |
US10229999B2 (en) | 2017-02-28 | 2019-03-12 | Globalfoundries Inc. | Methods of forming upper source/drain regions on a vertical transistor device |
US10014370B1 (en) | 2017-04-19 | 2018-07-03 | Globalfoundries Inc. | Air gap adjacent a bottom source/drain region of vertical transistor device |
US10811507B2 (en) | 2017-09-20 | 2020-10-20 | International Business Machines Corporation | Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
US10332972B2 (en) * | 2017-11-20 | 2019-06-25 | International Business Machines Corporation | Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface |
US10916638B2 (en) * | 2018-09-18 | 2021-02-09 | International Business Machines Corporation | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance |
US11043564B2 (en) * | 2019-03-15 | 2021-06-22 | Samsung Electronics Co., Ltd. | Integrated circuit devices including transistors having variable channel pitches |
US11688737B2 (en) * | 2020-02-05 | 2023-06-27 | Samsung Electronics Co., Ltd. | Integrated circuit devices including vertical field-effect transistors |
TWI748870B (zh) * | 2020-03-24 | 2021-12-01 | 王振志 | 邏輯閘及數位電路 |
Citations (7)
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US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
US5208172A (en) * | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
US5545586A (en) * | 1990-11-27 | 1996-08-13 | Nec Corporation | Method of making a transistor having easily controllable impurity profile |
US5554870A (en) * | 1994-02-04 | 1996-09-10 | Motorola, Inc. | Integrated circuit having both vertical and horizontal devices and process for making the same |
US5864158A (en) * | 1997-04-04 | 1999-01-26 | Advanced Micro Devices, Inc. | Trench-gated vertical CMOS device |
US20010002718A1 (en) * | 1996-05-02 | 2001-06-07 | Franz Hofmann | Method for production of a memory cell arrangement |
US6268621B1 (en) * | 1999-08-03 | 2001-07-31 | International Business Machines Corporation | Vertical channel field effect transistor |
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JPH03225873A (ja) * | 1990-01-30 | 1991-10-04 | Mitsubishi Electric Corp | 半導体装置 |
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US6150670A (en) * | 1999-11-30 | 2000-11-21 | International Business Machines Corporation | Process for fabricating a uniform gate oxide of a vertical transistor |
US6300199B1 (en) * | 2000-05-24 | 2001-10-09 | Micron Technology, Inc. | Method of defining at least two different field effect transistor channel lengths using differently angled sidewall segments of a channel defining layer |
US6436770B1 (en) * | 2000-11-27 | 2002-08-20 | Chartered Semiconductor Manufacturing Ltd. | Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantation |
US6387758B1 (en) * | 2001-03-26 | 2002-05-14 | Advanced Micro Devices, Inc. | Method of making vertical field effect transistor having channel length determined by the thickness of a layer of dummy material |
-
2001
- 2001-09-21 US US09/961,477 patent/US6686604B2/en not_active Expired - Lifetime
-
2002
- 2002-08-22 TW TW091119024A patent/TW578304B/zh not_active IP Right Cessation
- 2002-08-30 GB GB0220206A patent/GB2382719B/en not_active Expired - Fee Related
- 2002-09-20 JP JP2002274695A patent/JP5179693B2/ja not_active Expired - Fee Related
- 2002-09-23 KR KR1020020057533A patent/KR100908991B1/ko active IP Right Grant
-
2003
- 2003-10-14 US US10/684,713 patent/US7056783B2/en not_active Expired - Lifetime
-
2012
- 2012-05-07 JP JP2012105770A patent/JP2012178592A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
US5545586A (en) * | 1990-11-27 | 1996-08-13 | Nec Corporation | Method of making a transistor having easily controllable impurity profile |
US5208172A (en) * | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
US5554870A (en) * | 1994-02-04 | 1996-09-10 | Motorola, Inc. | Integrated circuit having both vertical and horizontal devices and process for making the same |
US20010002718A1 (en) * | 1996-05-02 | 2001-06-07 | Franz Hofmann | Method for production of a memory cell arrangement |
US5864158A (en) * | 1997-04-04 | 1999-01-26 | Advanced Micro Devices, Inc. | Trench-gated vertical CMOS device |
US6268621B1 (en) * | 1999-08-03 | 2001-07-31 | International Business Machines Corporation | Vertical channel field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
US7056783B2 (en) | 2006-06-06 |
KR20030025889A (ko) | 2003-03-29 |
TW578304B (en) | 2004-03-01 |
GB0220206D0 (en) | 2002-10-09 |
GB2382719A (en) | 2003-06-04 |
JP2003163282A (ja) | 2003-06-06 |
US6686604B2 (en) | 2004-02-03 |
US20050048709A1 (en) | 2005-03-03 |
US20030060015A1 (en) | 2003-03-27 |
JP2012178592A (ja) | 2012-09-13 |
JP5179693B2 (ja) | 2013-04-10 |
KR100908991B1 (ko) | 2009-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20160830 |