JP2012169609A - 半導体装置及び半導体装置の駆動方法 - Google Patents
半導体装置及び半導体装置の駆動方法 Download PDFInfo
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- JP2012169609A JP2012169609A JP2012012683A JP2012012683A JP2012169609A JP 2012169609 A JP2012169609 A JP 2012169609A JP 2012012683 A JP2012012683 A JP 2012012683A JP 2012012683 A JP2012012683 A JP 2012012683A JP 2012169609 A JP2012169609 A JP 2012169609A
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Abstract
【解決手段】第1の制御ゲート、第2の制御ゲート及び記憶ゲートを有するトランジスタを用いる。記憶ゲートを導電体化させ、該記憶ゲートに特定の電位を供給した後、少なくとも該記憶ゲートの一部を絶縁体化させて電位を保持させる。情報の書き込みは、第1及び第2の制御ゲートの電位を記憶ゲートを導電体化させる電位とし、記憶ゲートに記憶させる情報の電位を供給し、第1または第2の制御ゲートのうち少なくとも一方の電位を記憶ゲートを絶縁体化させる電位とすることで行う。情報の読み出しは、第2の制御ゲートの電位を記憶ゲートを絶縁体化させる電位とし、トランジスタのソースまたはドレインの一方と接続された配線に電位を供給し、その後、第1の制御ゲートに読み出し用の電位を供給し、ソースまたはドレインの他方と接続されたビット線の電位を検出することで行う。
【選択図】図1
Description
本実施の形態では、開示する発明の一態様に係る半導体装置の回路構成およびその動作の一例について、図1乃至図4を参照して説明する。本実施の形態では、トランジスタにp型トランジスタ(pチャネル型トランジスタ)を用いる場合について説明する。
本実施の形態では、実施の形態1に示した半導体装置の構成およびその作製方法の一例について、図5乃至図9を参照して説明する。
図5は、記憶素子として適用することができるトランジスタの一例を示している。図5(A)は、トランジスタ150の平面を示しており、図5(B)は、図5(A)におけるA1−A2で示した部位の断面を示している。図5(C)は、図5(A)におけるB1−B2で示した部位の断面を示している。
次に、本実施の形態で示した半導体装置の作製方法について、トランジスタ150の作製方法を例として、図8及び図9を参照して説明する。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図10を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラやデジタルビデオカメラなどのカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
101 第1の制御ゲート
102 第1のゲート絶縁層
103 電極
104 記憶ゲート
105 第2のゲート絶縁層
106 コンタクトホール
107 半導体層
108 半導体層
110 第2の制御ゲート
111 絶縁層
112 保護絶縁層
113 バックゲート
114 下地層
115 コンタクトホール
121 第1の領域
122 第2の領域
150 トランジスタ
160 トランジスタ
170 トランジスタ
200 メモリセル
201 第1の配線
202 第2の配線
203 第3の配線
210 トランジスタ
211 第1の制御ゲート
212 記憶ゲート
213 第2の制御ゲート
221 第1の領域
222 第2の領域
300 容量素子
301 電極
302 酸化物半導体
303 絶縁体
304 電極
311 曲線
312 曲線
320 部位
701 筐体
702 筐体
703 表示部
704 キーボード
711 本体
712 スタイラス
713 表示部
714 操作ボタン
715 外部インターフェイス
721 筐体
723 筐体
725 表示部
727 表示部
731 電源
733 操作キー
735 スピーカー
737 軸部
740 筐体
741 筐体
742 表示パネル
743 スピーカー
744 マイクロフォン
745 操作キー
746 ポインティングデバイス
747 カメラ用レンズ
748 外部接続端子
749 太陽電池セル
750 外部メモリスロット
761 本体
763 接眼部
764 操作スイッチ
765 表示部
766 バッテリー
767 表示部
770 テレビジョン装置
771 筐体
773 表示部
775 スタンド
780 リモコン操作機
801 第1の動作
802 第2の動作
803 第3の動作
811 第1の動作
812 第2の動作
1200 メモリセル
1210 トランジスタ
1211 制御ゲート
1212 記憶ゲート
1221 第1の駆動回路
1222 第2の駆動回路
1223 第3の駆動回路
108a ソース領域
108b ドレイン領域
109a ソース電極
109b ドレイン電極
Claims (16)
- 第1のゲート、第2のゲート、酸化物半導体を含む第3のゲート、及びチャネル形成領域を有する半導体層を有するトランジスタと、
配線と、を有し、
前記第3のゲートは、前記第1のゲート及び前記チャネル形成領域と重畳する第1の領域と、前記第1のゲートの端部を越えて延伸し、前記第2のゲートと重畳する第2の領域と、を有し、
前記第3のゲートの前記第2の領域は、前記配線と電気的に接続することを特徴とする半導体装置。 - 請求項1において、
前記配線は、ビット線であることを特徴とする半導体装置。 - 第1のゲート、第2のゲート、酸化物半導体を含む第3のゲート、及びチャネル形成領域を含む半導体層を有するトランジスタと、
第1の配線と、
第2の配線と、
第3の配線と、を有し、
前記第1のゲートは前記第1の配線と電気的に接続し、
前記第2のゲートは前記第3の配線と電気的に接続し、
前記トランジスタのソースまたはドレインの一方は、前記第2の配線と電気的に接続し、
前記トランジスタの前記ソースまたは前記ドレインの他方は、前記第3の配線と電気的に接続し、
前記第3のゲートは、前記第1のゲート及び前記チャネル形成領域と重畳する第1の領域と、前記第1のゲートの端部を越えて延伸し、前記第2のゲートと重畳する第2の領域を有し、
前記第3のゲートの前記第2の領域は、前記第2の配線と電気的に接続することを特徴とする半導体装置。 - 第1の制御ゲート、第2の制御ゲート、酸化物半導体を含む記憶ゲート、及びチャネル形成領域を有する半導体層を有するトランジスタと、
制御線と、
ビット線と、
ワード線と、を有し、
前記第1の制御ゲートは前記制御線と電気的に接続し、
前記第2の制御ゲートは前記ワード線と電気的に接続し、
前記記憶ゲートは前記ビット線と電気的に接続し、
前記トランジスタのソースまたはドレインの一方は、前記ビット線と電気的に接続し、
前記トランジスタの前記ソースまたは前記ドレインの他方は、前記ワード線と電気的に接続し、
前記記憶ゲートは、前記第1の制御ゲート及び前記チャネル形成領域と重畳する第1の領域と、前記第1の制御ゲートの端部を越えて延伸し、前記第2の制御ゲートと重畳する第2の領域を有することを特徴とする半導体装置。 - 請求項4において、
前記第1の制御ゲートの一部と、前記第2の制御ゲートの一部は、前記記憶ゲートの一部を間に挟んで重畳していることを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一において、
前記半導体層は結晶性半導体を有することを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一において、
前記トランジスタは、pチャネル型のトランジスタであることを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一において、
前記トランジスタは、nチャネル型のトランジスタであることを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一に記載の半導体装置を用いることを特徴とする電子機器。
- 請求項9において、
前記電子機器は、コンピュータ、携帯電話機、携帯情報端末、カメラ、電子ペーパー、またはテレビジョン装置としての機能を有することを特徴とする電子機器。 - 第1の制御ゲート、第2の制御ゲート、及び酸化物半導体を含む記憶ゲートを有するトランジスタを有し、
前記第1及び前記第2の制御ゲートの電位を、前記記憶ゲートを導電体化させる電位とし、
前記記憶ゲートに記憶させる電位を供給し、
前記第1の制御ゲートの電位または前記第2の制御ゲートの電位の少なくとも一方を、前記記憶ゲートを絶縁体化させる電位とすることを特徴とする半導体装置の駆動方法。 - 請求項11において、
前記記憶ゲートに記憶させる前記電位は、前記トランジスタをオフ状態とする電位であることを特徴とする半導体装置の駆動方法。 - 第1の制御ゲート、第2の制御ゲート、及び酸化物半導体を含む記憶ゲートを有するトランジスタを有し、
前記トランジスタのソースまたはドレインの一方に第1の電位を供給し、
前記トランジスタの前記ソースまたは前記ドレインの他方に第2の電位を供給し、
前記第1の制御ゲートに第3の電位を供給し、前記ソースまたは前記ドレインの一方の電位の変化を検出することを特徴とする半導体装置の駆動方法。 - 請求項13において、
前記第2の制御ゲートの電位は、前記記憶ゲートの少なくとも一部を絶縁体化させる電位であることを特徴とする半導体装置の駆動方法。 - 請求項13または請求項14において、
前記第1の電位と、前記第2の電位は、異なる電位であることを特徴とする半導体装置の駆動方法。 - 請求項13乃至請求項15のいずれか一において、
前記第3の電位は、負の電位であることを特徴とする半導体装置の駆動方法。
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JP2014135478A (ja) * | 2012-12-03 | 2014-07-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2015005735A (ja) * | 2013-05-20 | 2015-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022010017A (ja) * | 2013-06-05 | 2022-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011162104A1 (en) | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9366922B2 (en) * | 2012-02-07 | 2016-06-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor array and method for manufacturing the same |
US9852926B2 (en) * | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
US10014325B2 (en) * | 2016-03-10 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20180055701A (ko) | 2016-11-17 | 2018-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10044377B1 (en) * | 2017-02-06 | 2018-08-07 | Huawei Technologies Co., Ltd. | High swing transmitter driver with voltage boost |
US20210376156A1 (en) * | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Company Limited | Raised source/drain oxide semiconducting thin film transistor and methods of making the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6025269A (ja) * | 1983-07-21 | 1985-02-08 | Hitachi Ltd | 半導体記憶素子 |
JPH11111929A (ja) * | 1997-10-07 | 1999-04-23 | Hitachi Ltd | 半導体メモリ装置およびその製造方法 |
JP2000269457A (ja) * | 1999-03-17 | 2000-09-29 | Hitachi Ltd | 半導体素子及び半導体装置 |
JP2005527931A (ja) * | 2002-05-28 | 2005-09-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 2tメモリセルを有するメモリアレイ |
JP2006269660A (ja) * | 2005-03-23 | 2006-10-05 | Nara Institute Of Science & Technology | 半導体装置およびその製造方法 |
JP2009135185A (ja) * | 2007-11-29 | 2009-06-18 | Sony Corp | 光センサ素子、光センサ素子の駆動方法、表示装置、および表示装置の駆動方法 |
Family Cites Families (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3171836D1 (en) | 1980-12-08 | 1985-09-19 | Toshiba Kk | Semiconductor memory device |
JPS6381694A (ja) * | 1986-09-26 | 1988-04-12 | Sony Corp | メモリセル回路 |
US5280446A (en) | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
JPH11505377A (ja) | 1995-08-03 | 1999-05-18 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4149644B2 (ja) | 2000-08-11 | 2008-09-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
KR100437470B1 (ko) | 2001-01-31 | 2004-06-23 | 삼성전자주식회사 | 플래쉬 메모리 셀을 갖는 반도체 장치 및 그 제조 방법 |
JP4216483B2 (ja) | 2001-02-15 | 2009-01-28 | 株式会社東芝 | 半導体メモリ装置 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4776801B2 (ja) | 2001-04-24 | 2011-09-21 | 株式会社半導体エネルギー研究所 | メモリ回路 |
JP2003007833A (ja) | 2001-06-25 | 2003-01-10 | Nec Corp | 半導体装置 |
KR100355662B1 (ko) | 2001-08-25 | 2002-10-11 | 최웅림 | 반도체 비휘발성 메모리 및 어레이 그리고 그것의 동작 방법 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US6784480B2 (en) | 2002-02-12 | 2004-08-31 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
US6954377B2 (en) | 2002-03-19 | 2005-10-11 | O2Ic, Inc. | Non-volatile differential dynamic random access memory |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
US6828618B2 (en) | 2002-10-30 | 2004-12-07 | Freescale Semiconductor, Inc. | Split-gate thin-film storage NVM cell |
JP5046464B2 (ja) | 2002-12-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体記憶素子の作製方法 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US20050095786A1 (en) | 2003-11-03 | 2005-05-05 | Ting-Chang Chang | Non-volatile memory and method of manufacturing floating gate |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
WO2005088726A1 (ja) | 2004-03-12 | 2005-09-22 | Japan Science And Technology Agency | アモルファス酸化物及び薄膜トランジスタ |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006060138A (ja) | 2004-08-23 | 2006-03-02 | Toshiba Corp | 半導体集積回路装置 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
CN101057338B (zh) | 2004-11-10 | 2011-03-16 | 佳能株式会社 | 采用无定形氧化物的场效应晶体管 |
KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US20060284234A1 (en) | 2005-06-15 | 2006-12-21 | Tsung-Min Hsieh | Structure of a non-volatile memory device and operation method |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101103374B1 (ko) | 2005-11-15 | 2012-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7511343B2 (en) * | 2006-10-12 | 2009-03-31 | Xerox Corporation | Thin film transistor |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7582529B2 (en) | 2007-04-02 | 2009-09-01 | Sandisk Corporation | Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formation |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
KR20090091560A (ko) | 2008-02-25 | 2009-08-28 | 삼성전자주식회사 | 플래쉬 메모리 소자 및 그 제조방법 |
US8188535B2 (en) | 2008-05-16 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing method thereof |
JP5480554B2 (ja) | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
WO2011162104A1 (en) | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
TWI565001B (zh) | 2010-07-28 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
-
2012
- 2012-01-12 US US13/348,950 patent/US8634230B2/en not_active Expired - Fee Related
- 2012-01-25 JP JP2012012683A patent/JP5875877B2/ja not_active Expired - Fee Related
- 2012-01-27 KR KR1020120008416A patent/KR101903788B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6025269A (ja) * | 1983-07-21 | 1985-02-08 | Hitachi Ltd | 半導体記憶素子 |
JPH11111929A (ja) * | 1997-10-07 | 1999-04-23 | Hitachi Ltd | 半導体メモリ装置およびその製造方法 |
JP2000269457A (ja) * | 1999-03-17 | 2000-09-29 | Hitachi Ltd | 半導体素子及び半導体装置 |
US20020145159A1 (en) * | 1999-03-17 | 2002-10-10 | Hitachi, Ltd. | Semiconductor device |
JP2005527931A (ja) * | 2002-05-28 | 2005-09-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 2tメモリセルを有するメモリアレイ |
JP2006269660A (ja) * | 2005-03-23 | 2006-10-05 | Nara Institute Of Science & Technology | 半導体装置およびその製造方法 |
JP2009135185A (ja) * | 2007-11-29 | 2009-06-18 | Sony Corp | 光センサ素子、光センサ素子の駆動方法、表示装置、および表示装置の駆動方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014103379A (ja) * | 2012-11-20 | 2014-06-05 | Samsung Display Co Ltd | 表示装置 |
JP2014135478A (ja) * | 2012-12-03 | 2014-07-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US10269835B2 (en) | 2012-12-03 | 2019-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2015005735A (ja) * | 2013-05-20 | 2015-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10014413B2 (en) | 2013-05-20 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2022010017A (ja) * | 2013-06-05 | 2022-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7329575B2 (ja) | 2013-06-05 | 2023-08-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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---|---|
US8634230B2 (en) | 2014-01-21 |
KR20120087849A (ko) | 2012-08-07 |
JP5875877B2 (ja) | 2016-03-02 |
US20120194262A1 (en) | 2012-08-02 |
KR101903788B1 (ko) | 2018-10-02 |
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