JP2012146939A - 基板処理装置、基板の製造方法、及び、半導体デバイスの製造方法 - Google Patents
基板処理装置、基板の製造方法、及び、半導体デバイスの製造方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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Abstract
【解決手段】複数の基板14が縦方向に並んで配置される反応室と、反応室を覆うように設けられ、処理室を加熱する加熱部と、反応室内に複数の基板14に沿うように設けられ、複数の基板14が配置される方向に向けて第1ガスを噴出する第1ガス供給口68を有する第1ガス供給管60と、反応室内に複数の基板14に沿うように設けられ、複数の基板14が配置される方向に向けて第2ガスを噴出する第2ガス供給口72を有する第2ガス供給管70と、少なくとも第2ガスが第1ガス供給口へ向かう流れを抑制する第1遮蔽部と、を具備する熱処理装置。
【選択図】図6
Description
<全体構成>
先ず、図1に於いて、本発明の第1の実施形態に於けるSiCエピタキシャル膜を成膜する基板処理装置、および、半導体デバイスの製造工程の一つであるSiCエピタキシャル膜を成膜する基板の製造方法について説明する。
次に、図2、図3に於いて、SiCエピタキシャル膜を成膜する前記半導体製造装置10の前記処理炉40について説明する。処理炉40には、第1のガス供給口68を有する第1のガス供給ノズル60、第2のガス供給口72を有する第2のガス供給ノズル70、及び第1のガス排気口90が代表例としてそれぞれ1つずつ図示されている。又、不活性ガスを供給する第3のガス供給口360、第2のガス排気口390が図示されている。
図3に示す様に、前記第1のガス排気口90が、前記第1のガス供給ノズル60及び前記第2のガス供給ノズル70の位置に対して対向する様に配置され、前記マニホールド36には、前記第1のガス排気口90に接続されたガス排気管230が貫通する様設けられている。該ガス排気管230の下流側には、図示しない圧力検出器としての圧力センサ及び、圧力調整器としてのAPC(Auto Pressure Controller)バルブ214を介して真空ポンプ等の真空排気装置220が接続されている。圧力センサ及び前記APCバルブ214には、圧力制御部98が電気的に接続されており、該圧力制御部98は圧力センサにより検出された圧力に基づいて前記APCバルブ214の開度を調整し、前記処理炉40内の圧力が所定の圧力となる様所定のタイミングにて制御する様に構成されている(図4参照)。
次に、図5に於いて、前記処理炉40及びその周辺の構成について説明する。
該処理炉40の下方には、該処理炉40の下端開口を気密に閉塞する為の炉口蓋体としてシールキャップ102が設けられている。該シールキャップ102は、例えばステンレス等の金属製であり、円盤状に形成されている。該シールキャップ102の上面には、前記処理炉40の下端と当接するシール材としてのOリング(図示せず)が設けられている。前記シールキャップ102には回転機構104が設けられ、該回転機構104の回転軸106は前記シールキャップ102を貫通して前記ボート30に接続されており、該ボート30を回転させることでウェーハ14を回転させる様に構成されている。
次に、図4に於いて、SiCエピタキシャル膜を成膜する前記半導体製造装置10を構成する各部の制御構成について説明する。
次に、上述した第1のガス供給系及び第2のガス供給系を構成する理由について説明する。SiCエピタキシャル膜を成膜する半導体製造装置では、少なくともSi(シリコン)原子含有ガスと、C(炭素)原子含有ガスとで構成される原料ガスを前記反応室44に供給し、SiCエピタキシャル膜を成膜する必要がある。また、本実施例の様に、複数枚のウェーハ14が水平姿勢で多段に整列させて保持される場合に於いて、ウェーハ間の均一性を向上させるため、原料ガスを夫々のウェーハ近傍のガス供給口から供給できるように、前記反応室44内にガス供給ノズルを設けている。従って、ガス供給ノズル内も反応室と同じ条件となっている。この時、Si原子含有ガスとC原子含有ガスを同じガス供給ノズルにて供給すると、原料ガス同士が反応することで原料ガスが消費され、前記反応室44の下流側で原料ガスが不足するだけでなく、ガス供給ノズル内で反応し堆積したSiC膜等の堆積物がガス供給ノズルを閉塞し、原料ガスの供給が不安定になると共に、パーティクルを発生させる等の問題を生じてしまう。
ここで、上述の通り、ガス供給ノズル内の堆積は、Si原子含有ガス等のSiC膜の成膜に寄与する原料ガスの供給方法を工夫することで抑制することは可能である。しかしながら、分離して供給された原料ガスは、ガス供給口68、72から噴出した直後に混合される。ガス供給口68、72付近で原料ガスが混合されるとガス供給口にSiC膜が堆積する可能性があり、その結果、ガス供給口の閉塞や堆積したSiC膜の剥がれによるパーティクルの発生が生じる恐れがある。
次に、上述した前記半導体製造装置10を用い、半導体デバイスの製造工程の一工程として、SiC等で構成されるウェーハ14等の基板上に、例えばSiC膜を形成する基板の製造方法について説明する。尚、以下の説明に於いて前記半導体製造装置10を構成する各部の動作は、前記コントローラ152により制御される。
次に、ガス供給口68(72)の閉塞を抑制する第2の実施形態を図12を用いて説明する。なお、第2の実施形態では、第1の実施形態と相違する点について説明する。
次に、第3の実施形態について図14を用いて説明する。なお、第1の実施形態、及び、第2の実施形態と異なる点についてのみ説明する。
第3の実施形態では、プレミックス方式を用いた場合を示している。図14が示す通り、第1のガス供給ノズル60は、遮蔽壁を有しており、また、第1のガス供給ノズル60と第2のガス供給ノズル70の間には、不活性ガスを供給する第4のガス供給ノズル80を設けている。プレミックス方式の場合、上述したとおり、第1のガス供給口68にSiC膜の堆積が発生する可能性が高い。そこで、本実施形態では、不活性ガスによる第2のガス供給口からの還元ガスの第1のガス供給口68への回り込みを抑制しつつ、更に、第1のガス供給ノズルに設けられた遮蔽壁による抑制を実現している。これにより、より効率的にガス供給口へのSiC膜の堆積を抑制することが可能となっている。
次に、第4の実施形態について、図15から図17を用いて説明する。なお、第1の実施形態から第3の実施形態と異なる点についてのみ説明する。
第1の実施形態において、遮蔽壁を有するガス供給ノズル構成を説明した。しかしながら、ガス供給ノズルから供給する原料ガスの流速を速くした場合、次のような問題が生じる。即ち、図15(a)に示すように流速が遅い場合は、ガス供給口68(72)から噴出される原料ガスは、ガス供給口68(72)を出た後、拡散しながら遮蔽壁領域を通過する。従って、ガス供給口68(72)から噴出された原料ガスは遮蔽壁の側壁に沿って噴出されることになるため、他のガス供給口から噴出された原料ガスは、遮蔽壁領域に侵入しない。しかし、ガス供給口68(72)から噴出する原料ガスの流速が速くなるにつれて、原料ガスの貫徹力が強くなり、拡散をしないまま遮蔽壁領域を出てしまう。そうすると、図15(b)に示すように原料ガスのガス流と遮蔽壁との間に間隙ができてしまい、他のガス供給口68(72)から噴出された原料ガスがその間隙に進入し、遮蔽壁内部に堆積膜が形成されてしまう恐れがある。その結果、ガス供給口68(72)から噴出した原料ガスが当該堆積膜と接触することになり、速度の低下やパーティクルの発生等の不具合が生じる。特に、SiCエピタキシャル成長装置においては、水素ガスを主流とするため、水素ガスが供給される第2のガス供給ノズル70のほうで、この課題が顕著になる。
(1)本発明の一態様によれば、複数の基板が縦方向に並んで配置される反応室と、前記反応室を覆うように設けられ、前記処理室を加熱する加熱部と、前記反応室内に前記複数の基板に沿うように設けられ、前記複数の基板が配置される方向に向けて第1ガスを噴出する第1ガス供給口を有する第1ガス供給管と、前記反応室内に前記複数の基板に沿うように設けられ、前記複数の基板が配置される方向に向けて第2ガスを噴出する第2ガス供給口を有する第2ガス供給管と、少なくとも前記第2ガスが前記第1ガス供給口へ向かう流れを抑制する第1遮蔽部と、を具備する基板処理装置が提供される。
(2)上記(1)に記載される基板処理装置において、前記第1遮蔽部は、少なくとも前記第1ガス供給口の両側に設けられ、前記第1ガス供給口から前記複数の基板が配置される方向に延在する遮蔽壁である基板処理装置が提供される。
(3)上記(2)に記載される基板処理装置において、前記第1ガス供給口の両側に設けられた遮蔽壁の外壁の幅は、前記第1ガス供給口を正面から見た際の前記第1ガス供給ノズルの幅より小さい基板処理装置が提供される。
(4)上記(2)又は(3)に記載される基板処理装置において、前記遮蔽壁の先端部から前記第1ガス供給口までの長さは、前記遮蔽壁の内壁の幅より長い基板処理装置が提供される。
(5)上記(2)乃至(4)のいずれか一つに記載される基板処理装置において、前記第1ガスは、Si原子含有ガスとC原子含有ガスの混合ガスであり、前記第2ガスは、還元ガスである基板処理装置が提供される。
(6)上記(5)に記載される基板処理装置において、前記第2ガス供給ノズルには、前記第1ガスが前記第2ガス供給口に向かう流れを抑制する遮蔽部が設けられない基板処理装置が提供される。
(7)上記(2)乃至(4)のいずれか一つに記載される基板処理装置において、前記第1ガスは、Si原子含有ガスであり、前記第2ガスは、C原子含有ガスと還元ガスの混合ガスである基板処理装置が提供される。
(8)上記(7)に記載される基板処理装置において、前記第1ガスが前記第2ガス供給口へ向かう流れを抑制する第2遮蔽部を更に具備し、前記第2遮蔽部は、前記第2ガス供給口の両側に設けられ、前記第2ガス供給口から前記複数の基板が配置される方向に延在する第2遮蔽壁である基板処理装置が提供される。
(9)上記(2)乃至(8)のいずれか一つに記載される基板処理装置において、前記第1遮蔽壁の先端部は、曲面状である基板処理装置が提供される。
(10)上記(2)乃至(9)のいずれか一つに記載される基板処理装置において、前記第1遮蔽壁の厚さは、前記第1ガス供給ノズルの厚さと同じである基板処理装置が提供される。
(11)上記(2)乃至(10)のいずれか一つに記載される基板処理装置において、前記第1ガス供給口は、前記第1ガス供給ノズルに複数設けられ、前記第1遮蔽壁は、前記複数設けられた前記第1ガス供給口の周囲を囲うように設けられる基板処理装置が提供される。
(12)上記(2)乃至(10)のいずれか一つに記載される基板処理装置において、前記第1ガス供給口は、スリット状である基板処理装置が提供される。
(13)上記(1)に記載される基板処理装置において、前記第1遮蔽部は、前記第1ガス供給口から噴出する前記第1ガスの第1ガス流と前記第2ガス供給口から噴出する前記第2ガスの第2ガス流との間に設けられた不活性ガスの第3ガス流である基板処理装置が提供される。
(14)上記(13)に記載される基板処理装置において、前記第1ガス供給ノズルと前記第2ガス供給ノズルとの間に前記複数の基板に沿うように設けられ、前記不活性ガスを供給する第3ガス供給口を有する基板処理装置が提供される。
(15)上記(14)に記載される基板処理装置において、前記第3ガス供給口は、前記基板の中心部より前記第1ガス供給口に近い方向に向けられる基板処理装置が提供される。
(16)上記(15)において、前記第3ガス供給口は、前記第1ガス供給口に向けられる基板処理装置が提供される。
(17)上記(13)乃至(16)のいずれか一つに記載される基板処理装置において、前記第1ガスは、Si原子含有ガスであり、前記第2ガスは、C原子含有ガスである基板処理装置が提供される。
(18)上記(13)乃至(16)のいずれか一つに記載される基板処理装置において、前記第1ガスは、Si原子含有ガスとC原子含有ガスの混合ガスであり、前記第2ガスは、還元ガスである基板処理装置が提供される。
(19)上記(1)に記載される基板処理装置において、前記第2ガス供給管は、前記第2ガス供給口を構成する前記第2ガスの噴出方向に延びた直線状の噴出部と、前記噴出部を囲うように設けられ、前記噴出部から前記第2ガスの噴出方向に向かって広がる曲面状の面取り部を有する基板処理装置が提供される。
(20)上記(19)に記載される基板処理装置において、前記第2ガス供給管の前記面取り部の前記第2ガスの噴出方向の長さは、前記第1ガス供給管の遮蔽壁の前記第1ガスの噴出方向の長さより短い。
(21)また、上記(1)から(20)のいずれか一つに記載される第1ガス供給ノズルまたは第2ガス供給ノズルが提供される。
(22)本発明の他の一態様によれば、複数の基板を縦方向に搭載したボートを反応室内に搬入するボートローディング工程と、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第1ガス供給ノズルに設けられた第1ガス供給口から第1ガス、及び、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第2ガス供給ノズルに設けられた第2ガス供給口から第2ガスを前記複数の基板に供給し、前記第1ガスと前記第2ガスが混合されることにより前記複数の基板上に所定の膜を形成する成膜工程と、前記所定の膜が形成された前記複数の基板を前記反応室から搬出するボートアンローディング工程と、を有し、前記成膜工程において、前記第1ガスが前記第2ガス供給口に向かう流れを遮蔽部により抑制する基板の製造方法が提供される。
(23)本発明の他の一態様によれば、複数の基板を縦方向に搭載したボートを反応室内に搬入するボートローディング工程と、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第1ガス供給ノズルに設けられた第1ガス供給口から第1ガス、及び、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第2ガス供給ノズルに設けられた第2ガス供給口から第2ガスを前記複数の基板に供給し、前記第1ガスと前記第2ガスが混合されることにより前記複数の基板上に所定の膜を形成する成膜工程と、前記所定の膜が形成された前記複数の基板を前記反応室から搬出するボートアンローディング工程と、を有し、前記成膜工程において、前記第1ガスが前記第2ガス供給口に向かう流れを遮蔽部により抑制する半導体デバイスの製造方法が提供される。
40:処理炉、42:反応管、44:反応室、48:被加熱体、50:誘導コイル、60
:第1のガス供給ノズル、68:第1のガス供給口、70:第2のガス供給ノズル、72
:第2のガス供給口、80:第4のガス供給ノズル、85:第4のガス供給口、90:第
1のガス排気口、150:主制御部、152:コントローラ。
Claims (4)
- 複数の基板が縦方向に並んで配置される反応室と、
前記反応室を覆うように設けられ、前記処理室を加熱する加熱部と、
前記反応室内に前記複数の基板に沿うように設けられ、前記複数の基板が配置される方向に向けて第1ガスを噴出する第1ガス供給口を有する第1ガス供給管と、
前記反応室内に前記複数の基板に沿うように設けられ、前記複数の基板が配置される方向に向けて第2ガスを噴出する第2ガス供給口を有する第2ガス供給管と、
少なくとも前記第2ガスが前記第1ガス供給口へ向かう流れを抑制する第1遮蔽部と、
を具備する熱処理装置。 - 請求項1において、
前記第1遮蔽部は、少なくとも前記第1ガス供給口の両側に設けられ、前記第1ガス供給口から前記複数の基板が配置される方向に延在する遮蔽壁である基板処理装置。 - 請求項1において、
前記第1遮蔽部は、前記第1ガス供給口から噴出する前記第1ガスの第1ガス流と前記第2ガス供給口から噴出する前記第2ガスの第2ガス流との間に設けられた不活性ガスの第3ガス流である基板処理装置。 - 複数の基板を縦方向に搭載したボートを反応室内に搬入するボートローディング工程と、
前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第1ガス供給ノズルに設けられた第1ガス供給口から第1ガス、及び、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第2ガス供給ノズルに設けられた第2ガス供給口から第2ガスを前記複数の基板に供給し、前記第1ガスと前記第2ガスが混合されることにより前記複数の基板上に所定の膜を形成する成膜工程と、
前記所定の膜が形成された前記複数の基板を前記反応室から搬出するボートアンローディング工程と、を有し、
前記成膜工程において、前記第1ガスが前記第2ガス供給口に向かう流れを遮蔽部により抑制する基板の製造方法。
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JP5735304B2 (ja) | 2015-06-17 |
CN102543689B (zh) | 2015-09-30 |
CN102543689A (zh) | 2012-07-04 |
US20120156886A1 (en) | 2012-06-21 |
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