JP2020057704A - インジェクタ及びこれを用いた基板処理装置、並びに基板処理方法 - Google Patents
インジェクタ及びこれを用いた基板処理装置、並びに基板処理方法 Download PDFInfo
- Publication number
- JP2020057704A JP2020057704A JP2018187700A JP2018187700A JP2020057704A JP 2020057704 A JP2020057704 A JP 2020057704A JP 2018187700 A JP2018187700 A JP 2018187700A JP 2018187700 A JP2018187700 A JP 2018187700A JP 2020057704 A JP2020057704 A JP 2020057704A
- Authority
- JP
- Japan
- Prior art keywords
- injector
- gas
- substrate
- sectional shape
- substrate processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000012545 processing Methods 0.000 title claims abstract description 94
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 230000007246 mechanism Effects 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 9
- 238000013459 approach Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 185
- 235000012431 wafers Nutrition 0.000 description 113
- 238000006243 chemical reaction Methods 0.000 description 44
- 239000010408 film Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011553 magnetic fluid Substances 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
前記長手方向に垂直な断面において円形又は正多角形の断面形状を有し、吐出孔を有しないガス導入部と、
前記長手方向に垂直な断面において一方向に突出した断面形状を有し、突出した部分の先端に前記長手方向に沿って複数の吐出孔を有するとともに、前記長手方向における一端が前記ガス導入部に接続されたガス供給部と、を有する。
本開示の一実施形態に係る基板処理装置について説明する。一実施形態では、基板に熱処理を行う基板処理装置を例に挙げて説明するが、処理対象、処理内容は特に限定されず、ガスを処理容器内に供給して基板処理を行う種々の基板処理装置に適用可能である。
図4は、本開示の実施形態に係るインジェクタ及び基板処理装置の動作について説明するための図である。
次に、インジェクタ110を回転させるインジェクタ回転機構の一例について説明する。インジェクタ110を回転させる機構は、インジェクタ110を適切なタイミングで適切な角度回転させることができれば、種々の機構とすることができる。ここでは、インジェクタ回転機構の一例を説明するが、これに限定する趣旨ではない。
次に、図1に示した縦型熱処理装置が成膜処理を行うときの動作について説明する。縦型熱処理装置が成膜処理を行う場合、ウエハボート80に複数枚、例えば50〜100枚程度のウエハWがウエハボート80に載置された状態で蓋体60上のテーブル74上に載置され、蓋体60が上昇して密閉され、ウエハWが反応管10内に設置される。なお、図1には、インジェクタ110が1本しか示されていないが、図示しない複数本のインジェクタ110が設けられている例を挙げて説明する。
80 ウエハボート
76a モータ
76b エンコーダ
83、84 支柱
90 マニホールド
91 インジェクタ支持部
95 ガス入口
96 ガス流路
110 インジェクタ
111 ガス孔
112 ガス供給部
113 ガス導入部
114 回転軸
121 ガス配管
140 制御部
200 回転機構
210 エアシリンダ
220 リンク機構
Claims (18)
- 長手方向に延びたインジェクタであって、
前記長手方向に垂直な断面において円形又は正多角形の断面形状を有し、吐出孔を有しないガス導入部と、
前記長手方向に垂直な断面において一方向に突出した断面形状を有し、突出した部分の先端に前記長手方向に沿って複数の吐出孔を有するとともに、前記長手方向における一端が前記ガス導入部に接続されたガス供給部と、を有するインジェクタ。 - 前記ガス供給部の断面形状における前記突出した部分の先端の反対側の端部と、前記ガス導入部の端部は一致しており、前記長手方向において連続した端面をなす請求項1に記載のインジェクタ。
- 前記ガス供給部の断面形状は、前記突出した部分の先端と前記突出した部分の先端の反対側の端部とを結ぶ直線に関して線対称である請求項2に記載のインジェクタ。
- 前記ガス導入部は円形の断面形状を有し、
前記ガス供給部は楕円形の断面形状を有する請求項3に記載のインジェクタ。 - 前記ガス供給部の前記長手方向における他端は閉じている請求項1又は2に記載のインジェクタ。
- 前記ガス導入部及び前記ガス供給部は石英からなる請求項1乃至5のいずれか一項に記載のインジェクタ。
- 前記ガス供給部は、前記ガス導入部を包含する水平断面形状を有する請求項1乃至6のいずれか一項に記載のインジェクタ。
- 略円筒体状を有する処理容器と、
基板の外周に沿う位置に配置された複数本の支柱を有し、該複数本の支柱の内側に基板を多段に保持可能な保持構造を有し、鉛直方向に複数枚の基板を離間させて多段に保持可能であり、前記処理容器内に搬入及び搬出可能な基板保持具と、
該基板保持具を回転させる基板保持具回転機構と、
該基板保持具に沿うように鉛直方向に延びて設けられ、一方向に突出した水平断面形状を有し、突出した部分の先端に複数の吐出孔を有し、前記突出した部分の先端が前記支柱よりも内側に入り、前記突出した部分の反対側が前記支柱よりも外側にあるように設置されたインジェクタと、
該インジェクタ内の、前記支柱よりも外側の位置に回転軸を有し、前記基板保持具が回転して前記支柱が接近したときには前記支柱と接触しないように前記回転軸回りに前記インジェクタを回転させ、前記支柱が接近していないときには前記複数の吐出孔が前記支柱よりも内側に位置するように前記回転軸回りに前記インジェクタを回転させるインジェクタ回転機構と、を有する基板処理装置。 - 前記複数の吐出孔は、前記鉛直方向に沿って配置された請求項8に記載の基板処理装置。
- 前記インジェクタ回転機構は、前記支柱が接近していないときには、前記複数の吐出孔が最も基板に接近する位置にするように前記インジェクタを回転させる請求項8又は9に記載の基板処理装置。
- 前記インジェクタの下部には、前記回転軸と同軸の中心を有するとともに、前記突出した部分及び前記吐出孔を有さず、前記突出した部分の反対側は共通の端面をなすガス導入部が設けられている請求項8乃至10のいずれか一項に記載の基板処理装置。
- 前記インジェクタの前記水平断面形状を有する部分は楕円形の断面形状を有し、
前記ガス導入部は、円形の水平断面形状を有する請求項11に記載の基板処理装置。 - 前記ガス導入部の最も内側の部分は、前記支柱よりも外側に配置されている請求項12に記載の基板処理装置。
- 前記基板保持具の前記支柱の回転位置を検出する回転位置検出部と、
該回転位置検出部で検出された前記支柱の回転位置に基づいて前記インジェクタ回転機構の回転を制御する制御部と、を更に有する請求項8乃至13のいずれか一項に記載の基板処理装置。 - 前記回転位置検出部は、エンコーダを有する請求項14に記載の基板処理装置。
- 基板の外周に沿う位置に配置された複数本の支柱を有し、該複数本の支柱の内側において、鉛直方向に複数枚の基板を離間させて多段に保持した基板保持具を回転させる工程と、
該基板保持具に沿うように前記鉛直方向に延びて設けられ、一方向に突出した水平断面形状を有し、突出した部分の先端に複数の吐出孔を有し、前記突出した部分の先端が前記支柱よりも内側に入り、前記突出した部分の反対側が前記支柱よりも外側にあるように設置されたインジェクタから前記基板保持具に保持された前記複数枚の基板に処理ガスを供給する工程と、
前記基板保持具の前記複数本の支柱を検出する工程と、
検出された前記支柱が前記インジェクタに接近しているときには、前記支柱と接触しないように前記インジェクタを回転させ、前記支柱が接近していないときには前記複数の吐出孔が前記支柱よりも内側に位置するように前記インジェクタを回転させる工程と、を有する基板処理方法。 - 前記インジェクタ内の、前記支柱よりも外側にある位置に回転軸が設けられ、前記インジェクタを、前記回転軸の回りに回転させる請求項16に記載の基板処理方法。
- 前記複数本の支柱を検出する工程はエンコーダを用いて行う請求項16又は17に記載の基板処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018187700A JP7109331B2 (ja) | 2018-10-02 | 2018-10-02 | 基板処理装置及び基板処理方法 |
KR1020190118626A KR102518787B1 (ko) | 2018-10-02 | 2019-09-26 | 인젝터 및 이것을 사용한 기판 처리 장치, 그리고 기판 처리 방법 |
CN201910916456.5A CN110993498A (zh) | 2018-10-02 | 2019-09-26 | 喷射器和使用了该喷射器的基板处理装置及基板处理方法 |
US16/587,979 US11846023B2 (en) | 2018-10-02 | 2019-09-30 | Injector and substrate processing apparatus using the same, and substrate processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018187700A JP7109331B2 (ja) | 2018-10-02 | 2018-10-02 | 基板処理装置及び基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020057704A true JP2020057704A (ja) | 2020-04-09 |
JP7109331B2 JP7109331B2 (ja) | 2022-07-29 |
Family
ID=69947246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018187700A Active JP7109331B2 (ja) | 2018-10-02 | 2018-10-02 | 基板処理装置及び基板処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11846023B2 (ja) |
JP (1) | JP7109331B2 (ja) |
KR (1) | KR102518787B1 (ja) |
CN (1) | CN110993498A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11703229B2 (en) * | 2018-12-05 | 2023-07-18 | Yi-Ming Hung | Temperature adjustment apparatus for high temperature oven |
JP7209598B2 (ja) * | 2019-07-26 | 2023-01-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010225887A (ja) * | 2009-03-24 | 2010-10-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2012146939A (ja) * | 2010-12-21 | 2012-08-02 | Hitachi Kokusai Electric Inc | 基板処理装置、基板の製造方法、及び、半導体デバイスの製造方法 |
JP2018056232A (ja) * | 2016-09-27 | 2018-04-05 | 東京エレクトロン株式会社 | ガス導入機構及び処理装置 |
JP2018081956A (ja) * | 2016-11-14 | 2018-05-24 | 東京エレクトロン株式会社 | ガスインジェクタ、及び縦型熱処理装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4062318A (en) * | 1976-11-19 | 1977-12-13 | Rca Corporation | Apparatus for chemical vapor deposition |
US6121579A (en) * | 1996-02-28 | 2000-09-19 | Tokyo Electron Limited | Heating apparatus, and processing apparatus |
KR100829327B1 (ko) * | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반응 용기 |
WO2005015619A1 (ja) * | 2003-08-07 | 2005-02-17 | Hitachi Kokusai Electric Inc. | 基板処理装置および半導体装置の製造方法 |
US7632354B2 (en) * | 2006-08-08 | 2009-12-15 | Tokyo Electron Limited | Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system |
JP4879041B2 (ja) | 2007-02-20 | 2012-02-15 | 株式会社日立国際電気 | 基板処理装置 |
JP5253932B2 (ja) * | 2008-09-04 | 2013-07-31 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
JP2011029441A (ja) | 2009-07-27 | 2011-02-10 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
KR101205436B1 (ko) * | 2011-01-04 | 2012-11-28 | 삼성전자주식회사 | 화학 기상 증착 장치 |
JP2013048227A (ja) * | 2011-07-25 | 2013-03-07 | Tokyo Electron Ltd | シャワーヘッド装置及び成膜装置 |
JP2013089818A (ja) * | 2011-10-19 | 2013-05-13 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP6320824B2 (ja) * | 2014-03-31 | 2018-05-09 | 株式会社東芝 | ガス供給管、およびガス処理装置 |
JP6710149B2 (ja) * | 2016-11-21 | 2020-06-17 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6700165B2 (ja) * | 2016-12-22 | 2020-05-27 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
-
2018
- 2018-10-02 JP JP2018187700A patent/JP7109331B2/ja active Active
-
2019
- 2019-09-26 KR KR1020190118626A patent/KR102518787B1/ko active IP Right Grant
- 2019-09-26 CN CN201910916456.5A patent/CN110993498A/zh active Pending
- 2019-09-30 US US16/587,979 patent/US11846023B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010225887A (ja) * | 2009-03-24 | 2010-10-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2012146939A (ja) * | 2010-12-21 | 2012-08-02 | Hitachi Kokusai Electric Inc | 基板処理装置、基板の製造方法、及び、半導体デバイスの製造方法 |
JP2018056232A (ja) * | 2016-09-27 | 2018-04-05 | 東京エレクトロン株式会社 | ガス導入機構及び処理装置 |
JP2018081956A (ja) * | 2016-11-14 | 2018-05-24 | 東京エレクトロン株式会社 | ガスインジェクタ、及び縦型熱処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US11846023B2 (en) | 2023-12-19 |
KR20200038185A (ko) | 2020-04-10 |
CN110993498A (zh) | 2020-04-10 |
US20200102652A1 (en) | 2020-04-02 |
JP7109331B2 (ja) | 2022-07-29 |
KR102518787B1 (ko) | 2023-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102228321B1 (ko) | 가스 도입 기구 및 처리 장치 | |
US11282721B2 (en) | Vertical heat treatment apparatus | |
US20230119730A1 (en) | Substrate Processing Method and Substrate Processing Apparatus | |
CN109559975B (zh) | 基板处理装置、反应管、半导体装置的制造方法及程序 | |
KR102518787B1 (ko) | 인젝터 및 이것을 사용한 기판 처리 장치, 그리고 기판 처리 방법 | |
US11784070B2 (en) | Heat treatment apparatus, heat treatment method, and film forming method | |
CN110120359B (zh) | 基板处理方法和基板处理装置 | |
KR102205381B1 (ko) | 기판 처리 장치 | |
TWI731226B (zh) | 基板處理裝置 | |
US11542602B2 (en) | Substrate processing apparatus and substrate processing method | |
US20210017646A1 (en) | Substrate processing apparatus and substrate processing method | |
JP3056241B2 (ja) | 熱処理装置 | |
KR20210089578A (ko) | 가스 공급 구조 및 기판 처리 장치 | |
JP2007035775A (ja) | 基板処理装置 | |
CN111058015A (zh) | 基板处理装置、基板的输入方法以及基板处理方法 | |
JP2005056908A (ja) | 基板処理装置 | |
US20220230896A1 (en) | Substrate processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210415 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220331 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220621 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220719 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7109331 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |