JP2012052174A - 積層構造体及びその製造方法 - Google Patents
積層構造体及びその製造方法 Download PDFInfo
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- JP2012052174A JP2012052174A JP2010194547A JP2010194547A JP2012052174A JP 2012052174 A JP2012052174 A JP 2012052174A JP 2010194547 A JP2010194547 A JP 2010194547A JP 2010194547 A JP2010194547 A JP 2010194547A JP 2012052174 A JP2012052174 A JP 2012052174A
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- laminated structure
- thin film
- impurity diffusion
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- indium
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 52
- 229910052738 indium Inorganic materials 0.000 claims abstract description 49
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 229910052742 iron Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 61
- 238000009792 diffusion process Methods 0.000 claims description 42
- 230000003405 preventing effect Effects 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 230000002265 prevention Effects 0.000 claims description 13
- 238000007772 electroless plating Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000011109 contamination Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 11
- 239000000470 constituent Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229940067741 sodium octyl sulfate Drugs 0.000 description 1
- WFRKJMRGXGWHBM-UHFFFAOYSA-M sodium;octyl sulfate Chemical compound [Na+].CCCCCCCCOS([O-])(=O)=O WFRKJMRGXGWHBM-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Chemically Coating (AREA)
Abstract
【解決手段】積層構造体は、バッキングプレート、バッキングプレート上に形成されたFe,W,Ta,Te,Nb,Mo,S及びSiから選択された1種類以上の金属で構成された薄膜からなる不純物拡散防止層、及び、不純物拡散防止層上に形成されたインジウムターゲットを備える。
【選択図】なし
Description
また、ボンディング材として、錫等の不純物元素とインジウムとの合金を使用する場合、インジウムターゲットをスパッタ使用後に回収してリサイクルする際、インジウム以外の不純物元素の除去や濃度管理の手間がかかり、製造効率及び製造コストの点で問題がある。
直径250mm、厚さ5mmの銅製のバッキングプレートを準備した。続いて、鉄濃度2mol/Lの塩化鉄溶液、界面活性剤としてオクチル硫酸ナトリウム(0.5×10-3mol/L)、及び、塩化カルシウム(1.5mol/L)を混合させた溶液をめっき液とし、これを用いて無電解めっきにより、バッキングプレート上に膜厚20μmの鉄製の薄膜(不純物拡散防止層)を形成した。
次に、鉄製の薄膜が形成されたバッキングプレート上の周囲を直径205mm、高さ7mmの円筒状の鋳型で囲い、その内部に160℃で溶解させたインジウム原料(純度5N)を流し込んだ後、室温まで冷却して、円盤状のインジウムターゲット(直径204mm×厚み6mm)を形成することにより、積層構造体を作製した。
鉄製の薄膜の膜厚を100μmとした以外は、実施例1と同様の条件で積層構造体を作製した。
鉄製の薄膜の膜厚を5μmとした以外は、実施例1と同様の条件で積層構造体を作製した。
鉄製の薄膜の膜厚を4μmとした以外は、実施例1と同様の条件で積層構造体を作製した。
鉄製の薄膜の膜厚を120μmとした以外は、実施例1と同様の条件で積層構造体を作製した。
鉄製の薄膜を形成しなかった以外は、実施例1と同様の条件で積層構造体を作製した。
実施例及び比較例で得られた積層構造体のインジウムターゲットについて、不純物濃度をICP分析法で測定した。
各測定結果を表1に示す。
実施例4では、鉄製の薄膜(不純物拡散防止層)の厚さが4μmとやや薄い膜に形成されているため、インジウム中の銅の濃度が実施例3と比較すると多かった。しかしながら、インジウム中の銅濃度は7ppmであるため、銅の拡散が良好に抑制されているといえる。
実施例5では、鉄製の薄膜(不純物拡散防止層)の厚さが120μmとやや厚い膜に形成されているため、インジウム中の鉄の濃度が実施例2と比較すると多かった。しかしながら、インジウム中の銅濃度は1ppm未満であるため、銅の拡散が良好に抑制されているといえる。
比較例1では、鉄製の薄膜(不純物拡散防止層)を形成しておらず、インジウムターゲットへの銅の拡散量が多く、インジウムターゲット中の銅濃度が3000ppmと非常に大きかった。
Claims (8)
- バッキングプレート、該バッキングプレート上に形成されたFe,W,Ta,Te,Nb,Mo,S及びSiから選択された1種類以上の金属で構成された薄膜からなる不純物拡散防止層、及び、該不純物拡散防止層上に形成されたインジウムターゲットを備えた積層構造体。
- 前記不純物拡散防止層が、Feで構成された薄膜で形成されている請求項1に記載の積層構造体。
- 前記Feで構成された薄膜が無電解めっきで形成されている請求項2に記載の積層構造体。
- 前記不純物拡散防止層が、5〜100μmである請求項1〜3のいずれかに記載の積層構造体。
- 前記インジウムターゲット中の銅濃度が5ppm以下、鉄濃度が8ppm以下である請求項1〜4のいずれかに記載の積層構造体。
- バッキングプレートを準備する工程と、
前記バッキングプレート上にFe,W,Ta,Te,Nb,Mo,S及びSiから選択された1種類以上の金属で構成された薄膜からなる不純物拡散防止層を形成する工程と、
前記バッキングプレート上にインジウム原料を溶解鋳造することによりインジウムターゲットを形成する工程と、
を備えた積層構造体の製造方法。 - 前記不純物拡散防止層を、Feで構成された薄膜で形成する請求項6に記載の積層構造体の製造方法。
- 前記Feで構成された薄膜を無電解めっきで形成する請求項7に記載の積層構造体の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010194547A JP4872014B1 (ja) | 2010-08-31 | 2010-08-31 | 積層構造体及びその製造方法 |
PCT/JP2011/060971 WO2012029356A1 (ja) | 2010-08-31 | 2011-05-12 | 積層構造体及びその製造方法 |
TW100116607A TWI381067B (zh) | 2010-08-31 | 2011-05-12 | Laminated structure and manufacturing method thereof |
KR1020117026612A KR101183503B1 (ko) | 2010-08-31 | 2011-05-12 | 적층 구조체 및 그 제조 방법 |
CN201180002728.2A CN102510911B (zh) | 2010-08-31 | 2011-05-12 | 层叠结构体及其制造方法 |
US13/386,984 US20120270065A1 (en) | 2010-08-31 | 2011-05-12 | Multi-layered structure and manufacturing method thereof |
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JP2010194547A JP4872014B1 (ja) | 2010-08-31 | 2010-08-31 | 積層構造体及びその製造方法 |
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JP4872014B1 JP4872014B1 (ja) | 2012-02-08 |
JP2012052174A true JP2012052174A (ja) | 2012-03-15 |
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JP2010194547A Active JP4872014B1 (ja) | 2010-08-31 | 2010-08-31 | 積層構造体及びその製造方法 |
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Country | Link |
---|---|
US (1) | US20120270065A1 (ja) |
JP (1) | JP4872014B1 (ja) |
KR (1) | KR101183503B1 (ja) |
CN (1) | CN102510911B (ja) |
TW (1) | TWI381067B (ja) |
WO (1) | WO2012029356A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101271846B1 (ko) | 2011-09-21 | 2013-06-07 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 적층 구조체 및 그 제조 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106536787B (zh) * | 2014-07-31 | 2019-02-22 | 捷客斯金属株式会社 | 将防腐蚀性金属与Mo或Mo合金扩散接合而得到的背衬板、以及具备该背衬板的溅射靶-背衬板组件 |
CN106739261A (zh) * | 2016-11-24 | 2017-05-31 | 苏州华意铭铄激光科技有限公司 | 一种低温塑性好的复合金属制品 |
Citations (5)
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JPS6344820B2 (ja) * | 1981-05-07 | 1988-09-07 | Mitsui Mining & Smelting Co | |
JPH02267261A (ja) * | 1989-04-06 | 1990-11-01 | Kojundo Chem Lab Co Ltd | スパッタリングターゲットの製造方法 |
JPH04346659A (ja) * | 1991-05-23 | 1992-12-02 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
JPH11236664A (ja) * | 1998-02-24 | 1999-08-31 | Mitsui Chem Inc | スパッタリング用ターゲットのバッキングプレート |
JP2010024474A (ja) * | 2008-07-16 | 2010-02-04 | Sumitomo Metal Mining Co Ltd | インジウムターゲットの製造方法 |
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US7136173B2 (en) * | 1998-07-09 | 2006-11-14 | Acm Research, Inc. | Method and apparatus for end-point detection |
FR325790A (fr) * | 2002-03-28 | 1903-05-08 | Kempshall Eleazer | Balle perfectionnée pour le jeu de golf |
JP4524577B2 (ja) | 2003-04-24 | 2010-08-18 | 東ソー株式会社 | 透明導電膜およびスパッタリングターゲット |
DE602004028129D1 (de) * | 2003-08-11 | 2010-08-26 | Honeywell Int Inc | Target/trägerplatte-konstruktionen und herstellungsverfahren dafür |
JP5272361B2 (ja) * | 2006-10-20 | 2013-08-28 | 豊田合成株式会社 | スパッタ成膜装置およびスパッタ成膜装置用のバッキングプレート |
JP4346659B2 (ja) * | 2007-12-27 | 2009-10-21 | 株式会社東芝 | 情報処理装置、バックアップ記憶装置、および情報処理方法 |
JP5426124B2 (ja) * | 2008-08-28 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
US8053861B2 (en) * | 2009-01-26 | 2011-11-08 | Novellus Systems, Inc. | Diffusion barrier layers |
US7785921B1 (en) * | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
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2010
- 2010-08-31 JP JP2010194547A patent/JP4872014B1/ja active Active
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2011
- 2011-05-12 CN CN201180002728.2A patent/CN102510911B/zh active Active
- 2011-05-12 WO PCT/JP2011/060971 patent/WO2012029356A1/ja active Application Filing
- 2011-05-12 US US13/386,984 patent/US20120270065A1/en not_active Abandoned
- 2011-05-12 TW TW100116607A patent/TWI381067B/zh active
- 2011-05-12 KR KR1020117026612A patent/KR101183503B1/ko active IP Right Grant
Patent Citations (5)
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JPS6344820B2 (ja) * | 1981-05-07 | 1988-09-07 | Mitsui Mining & Smelting Co | |
JPH02267261A (ja) * | 1989-04-06 | 1990-11-01 | Kojundo Chem Lab Co Ltd | スパッタリングターゲットの製造方法 |
JPH04346659A (ja) * | 1991-05-23 | 1992-12-02 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
JPH11236664A (ja) * | 1998-02-24 | 1999-08-31 | Mitsui Chem Inc | スパッタリング用ターゲットのバッキングプレート |
JP2010024474A (ja) * | 2008-07-16 | 2010-02-04 | Sumitomo Metal Mining Co Ltd | インジウムターゲットの製造方法 |
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KR101271846B1 (ko) | 2011-09-21 | 2013-06-07 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 적층 구조체 및 그 제조 방법 |
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TW201209222A (en) | 2012-03-01 |
CN102510911A (zh) | 2012-06-20 |
US20120270065A1 (en) | 2012-10-25 |
TWI381067B (zh) | 2013-01-01 |
CN102510911B (zh) | 2014-11-05 |
WO2012029356A1 (ja) | 2012-03-08 |
KR20120040132A (ko) | 2012-04-26 |
KR101183503B1 (ko) | 2012-09-20 |
JP4872014B1 (ja) | 2012-02-08 |
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