JP6217295B2 - Inスパッタリングターゲット - Google Patents
Inスパッタリングターゲット Download PDFInfo
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- JP6217295B2 JP6217295B2 JP2013209977A JP2013209977A JP6217295B2 JP 6217295 B2 JP6217295 B2 JP 6217295B2 JP 2013209977 A JP2013209977 A JP 2013209977A JP 2013209977 A JP2013209977 A JP 2013209977A JP 6217295 B2 JP6217295 B2 JP 6217295B2
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- 238000005477 sputtering target Methods 0.000 title claims description 49
- 229910052797 bismuth Inorganic materials 0.000 claims description 19
- 229910052787 antimony Inorganic materials 0.000 claims description 18
- 229910052725 zinc Inorganic materials 0.000 claims description 17
- 229910052718 tin Inorganic materials 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 12
- 229910000905 alloy phase Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 63
- 238000004544 sputter deposition Methods 0.000 description 21
- 239000000654 additive Substances 0.000 description 17
- 230000000996 additive effect Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000002159 abnormal effect Effects 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 9
- 229910002059 quaternary alloy Inorganic materials 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0483—Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Description
(1)本発明のInスパッタリングターゲットは、 Bi、Sb、Sn、Znから選択された1種以上の元素を合計で0.5〜10.0原子%含有し、残部がIn及び不可避不純物からなる成分組成を有する鋳造体からなるスパッタリングターゲットであって、前記スパッタリングターゲット中の酸素濃度が0.04質量%以下であり、さらに、前記スパッタリングターゲット中のBi、Sb、Sn、Znから選択された1種以上を含む合金相の最大粒径が50μm以下であることを特徴とする。
さらに、スパッタリングターゲット中の酸素含有量は、スパッタ後のターゲット表面の荒れ発生の原因である、スパッタリング時の異常放電の発生を抑制する上では、できるだけ少ないことが好ましく、本発明では、酸素含有量を0.04質量%以下とした。さらに、望ましくは、酸素含有量は0.03質量%以下が良い。
先ず、Inスパッタリングターゲットを製造するために、ターゲット製造原料として、In(純度4N以上)、Bi(純度4N以上)、Sb(純度4N以上)、Sn(純度4N以上)、Zn(純度4N以上)を用意した。ここで、Bi、Sb、Sn、Znに関しては、製造原料としてインゴットでも良いが、溶解のしやすさから、粉末のものを用意した。下記の表1に示されるように、Inと、添加元素としてのBi、Sb、Sn、Znの各粉末とをそれぞれ秤量した。なお、表1には、添加元素の量(質量%)のみが示されているが、Inの量は、その残部であるため、表示されていない。
また、本発明の実施例と比較するため、下記の表2に示すように、実施例の場合と同様の手法により、添加元素を含まないInのみの比較例1及び2のInスパッタリングターゲットと、Bi:0.05原子%を添加した比較例3のInスパッタリングターゲットと、Zn:0.07原子%を添加した比較例4のInスパッタリングターゲットと、Sb:0.07原子%を添加した比較例5のInスパッタリングターゲットと、Snを0.05原子%添加した比較例6のInスパッタリングターゲットをそれぞれ作製した。
作製されたスパッタリングターゲットの表面(旋盤加工面)を王水で1分程度エッチングし、純水で洗浄後、電子線マイクロアナライザ(EPMA)によるマッピング分析を、倍率200倍で、表面上の任意の5箇所で観測した。明確な組織が見えない場合には、王水のエッチングを追加で行った。ここで、EPMAの1画像から観察される添加元素成分のうち、最も大きい領域に係る最大径を、添加元素含有合金相の最大粒径とした。その測定結果が、下記の表1及び表2に示されている。
作製されたスパッタリングターゲットの表面から1g程度サンプリングを行い、表面を王水で1分程度エッチングし、純水で洗浄後、ガス分析により酸素濃度を測定した。
<XRD回折測定結果の解析>
作製されたスパッタリングターゲットの表面を理学電気社製XRD装置(RINT−Ultima/PC)により、2θ=5〜80°の範囲で測定した。表1においては、Bi、Sb、Sn、Zn添加元素単体に由来するピークが現れた場合を「有」とし、現れない場合を「無」とした。
<成膜条件>
・基板:ガラス基板
・基板サイズ:20mm角
・電源:DC500W
・全圧:0.15Pa
・スパッタリングガス:Ar=30sccm
・ターゲット−基板(TS)距離:70mm
<異常放電回数の測定>
上述の条件において12時間のスパッタリングを行い、DC電源装置に備えられているアークカウント機能により異常放電の回数を計測した。その後、スパッタチャンバーを開放し、チャンバー内のパーティクルを確認した。
<スパッタ後のターゲット表面状態の観察>
異常放電回数の測定後のターゲット表面を観察し、エロージョン部が凸凹に荒れている場合を、荒れ「有」とし、荒れのない場合を、荒れ「無」とした。
<ヒロックの評価方法>
得られたIn膜を取り出し、電界放射型走査電子顕微鏡(FE−SEM)にて膜表面のInヒロックの有無を確認した。In膜にInヒロックが現れるものを「有」、現れないものを「無」とした。
Claims (1)
- Bi、Sb、Sn、Znから選択された1種以上の元素を合計で0.5〜10.0原子%含有し、残部がIn及び不可避不純物からなる成分組成を有する鋳造体からなるスパッタリングターゲットであって、
前記スパッタリングターゲット中の酸素濃度が0.04質量%以下であり、
さらに、前記スパッタリングターゲット中のBi、Sb、Sn、Znから選択された1種以上を含む合金相の最大粒径が50μm以下であることを特徴とするInスパッタリングターゲット。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013209977A JP6217295B2 (ja) | 2013-10-07 | 2013-10-07 | Inスパッタリングターゲット |
PCT/JP2014/076811 WO2015053265A1 (ja) | 2013-10-07 | 2014-10-07 | In膜、In膜を成膜するためのInスパッタリングターゲット及びその製造方法 |
TW103134885A TW201529862A (zh) | 2013-10-07 | 2014-10-07 | 銦膜、供形成銦膜之銦濺鍍靶及其製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013209977A JP6217295B2 (ja) | 2013-10-07 | 2013-10-07 | Inスパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
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JP2015074788A JP2015074788A (ja) | 2015-04-20 |
JP6217295B2 true JP6217295B2 (ja) | 2017-10-25 |
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Family Applications (1)
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JP2013209977A Expired - Fee Related JP6217295B2 (ja) | 2013-10-07 | 2013-10-07 | Inスパッタリングターゲット |
Country Status (3)
Country | Link |
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JP (1) | JP6217295B2 (ja) |
TW (1) | TW201529862A (ja) |
WO (1) | WO2015053265A1 (ja) |
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WO2017099215A1 (ja) * | 2015-12-11 | 2017-06-15 | 旭硝子株式会社 | スパッタリングターゲット、積層体、複層体、および積層体の製造方法 |
CN107083509B (zh) * | 2017-03-16 | 2018-06-19 | 宁波新瑞清科金属材料有限公司 | 用于igbt散热的复合式液态金属热界面材料 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11236664A (ja) * | 1998-02-24 | 1999-08-31 | Mitsui Chem Inc | スパッタリング用ターゲットのバッキングプレート |
JP4184498B2 (ja) * | 1998-10-14 | 2008-11-19 | 株式会社アルバック | 亜鉛/インジウム系bm膜、及びbm膜製造方法 |
JP4448648B2 (ja) * | 2002-08-02 | 2010-04-14 | 出光興産株式会社 | スパッタリングターゲット及び焼結体それらを利用して製造した導電膜。 |
US8080141B2 (en) * | 2008-11-18 | 2011-12-20 | Guardian Industries Corp. | ITO-coated article and/or method of making the same via heat treating |
US9103000B2 (en) * | 2009-11-25 | 2015-08-11 | Zetta Research and Development LLC—AQT Series | Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same |
DE102011012034A1 (de) * | 2011-02-22 | 2012-08-23 | Heraeus Materials Technology Gmbh & Co. Kg | Rohrförmiges Sputtertarget |
JP5165100B1 (ja) * | 2011-11-01 | 2013-03-21 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
JP5424140B2 (ja) * | 2012-04-13 | 2014-02-26 | 三菱マテリアル株式会社 | 透明導電膜形成用スパッタリングターゲット |
CN103194722B (zh) * | 2013-03-28 | 2016-04-27 | 深圳首创新能源股份有限公司 | 制造太阳能电池的方法 |
-
2013
- 2013-10-07 JP JP2013209977A patent/JP6217295B2/ja not_active Expired - Fee Related
-
2014
- 2014-10-07 TW TW103134885A patent/TW201529862A/zh unknown
- 2014-10-07 WO PCT/JP2014/076811 patent/WO2015053265A1/ja active Application Filing
Also Published As
Publication number | Publication date |
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TW201529862A (zh) | 2015-08-01 |
WO2015053265A1 (ja) | 2015-04-16 |
JP2015074788A (ja) | 2015-04-20 |
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