JP2012028420A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2012028420A
JP2012028420A JP2010163382A JP2010163382A JP2012028420A JP 2012028420 A JP2012028420 A JP 2012028420A JP 2010163382 A JP2010163382 A JP 2010163382A JP 2010163382 A JP2010163382 A JP 2010163382A JP 2012028420 A JP2012028420 A JP 2012028420A
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Japan
Prior art keywords
gate electrode
separation groove
semiconductor substrate
semiconductor device
film
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Pending
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JP2010163382A
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English (en)
Japanese (ja)
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JP2012028420A5 (https=
Inventor
Kazuaki Iwazawa
和明 岩澤
Yukinobu Nagashima
幸延 永島
Hiroshi Akahori
浩史 赤堀
Kiyohito Nishihara
清仁 西原
Masaki Kondo
正樹 近藤
Shigeo Kondo
重雄 近藤
Hisashi Ichikawa
尚志 市川
yong-gang Chang
穎康 張
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010163382A priority Critical patent/JP2012028420A/ja
Priority to US13/117,525 priority patent/US20120018783A1/en
Publication of JP2012028420A publication Critical patent/JP2012028420A/ja
Publication of JP2012028420A5 publication Critical patent/JP2012028420A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010163382A 2010-07-20 2010-07-20 半導体装置およびその製造方法 Pending JP2012028420A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010163382A JP2012028420A (ja) 2010-07-20 2010-07-20 半導体装置およびその製造方法
US13/117,525 US20120018783A1 (en) 2010-07-20 2011-05-27 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010163382A JP2012028420A (ja) 2010-07-20 2010-07-20 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2012028420A true JP2012028420A (ja) 2012-02-09
JP2012028420A5 JP2012028420A5 (https=) 2012-10-04

Family

ID=45492877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010163382A Pending JP2012028420A (ja) 2010-07-20 2010-07-20 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US20120018783A1 (https=)
JP (1) JP2012028420A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102377376B1 (ko) 2015-06-26 2022-03-21 어플라이드 머티어리얼스, 인코포레이티드 실리콘 산화물 막들의 선택적 증착
KR102472136B1 (ko) 2018-03-12 2022-11-30 삼성전자주식회사 집적회로 소자
CN111180450B (zh) * 2018-11-12 2022-09-16 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法、电子装置
CN116633602A (zh) * 2023-05-11 2023-08-22 安徽东联信息技术有限公司 一种用于网络安全的隔离装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132546A (ja) * 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法
JPS6422051A (en) * 1987-07-17 1989-01-25 Matsushita Electric Industrial Co Ltd Manufacture of semiconductor device
JPH02222160A (ja) * 1989-02-23 1990-09-04 Nissan Motor Co Ltd 半導体装置の製造方法
JPH05291395A (ja) * 1992-04-10 1993-11-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH06342911A (ja) * 1993-06-01 1994-12-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2008172082A (ja) * 2007-01-12 2008-07-24 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2008187118A (ja) * 2007-01-31 2008-08-14 Toshiba Corp 半導体記憶装置
JP2009016692A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 半導体記憶装置の製造方法と半導体記憶装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132546A (ja) * 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法
JPS6422051A (en) * 1987-07-17 1989-01-25 Matsushita Electric Industrial Co Ltd Manufacture of semiconductor device
JPH02222160A (ja) * 1989-02-23 1990-09-04 Nissan Motor Co Ltd 半導体装置の製造方法
JPH05291395A (ja) * 1992-04-10 1993-11-05 Mitsubishi Electric Corp 半導体装置の製造方法
JPH06342911A (ja) * 1993-06-01 1994-12-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2008172082A (ja) * 2007-01-12 2008-07-24 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2008187118A (ja) * 2007-01-31 2008-08-14 Toshiba Corp 半導体記憶装置
JP2009016692A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 半導体記憶装置の製造方法と半導体記憶装置

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Publication number Publication date
US20120018783A1 (en) 2012-01-26

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