JP2012028420A5 - - Google Patents
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- Publication number
- JP2012028420A5 JP2012028420A5 JP2010163382A JP2010163382A JP2012028420A5 JP 2012028420 A5 JP2012028420 A5 JP 2012028420A5 JP 2010163382 A JP2010163382 A JP 2010163382A JP 2010163382 A JP2010163382 A JP 2010163382A JP 2012028420 A5 JP2012028420 A5 JP 2012028420A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- separation groove
- semiconductor substrate
- semiconductor device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010163382A JP2012028420A (ja) | 2010-07-20 | 2010-07-20 | 半導体装置およびその製造方法 |
| US13/117,525 US20120018783A1 (en) | 2010-07-20 | 2011-05-27 | Semiconductor device and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010163382A JP2012028420A (ja) | 2010-07-20 | 2010-07-20 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012028420A JP2012028420A (ja) | 2012-02-09 |
| JP2012028420A5 true JP2012028420A5 (https=) | 2012-10-04 |
Family
ID=45492877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010163382A Pending JP2012028420A (ja) | 2010-07-20 | 2010-07-20 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20120018783A1 (https=) |
| JP (1) | JP2012028420A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102377376B1 (ko) | 2015-06-26 | 2022-03-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 실리콘 산화물 막들의 선택적 증착 |
| KR102472136B1 (ko) | 2018-03-12 | 2022-11-30 | 삼성전자주식회사 | 집적회로 소자 |
| CN111180450B (zh) * | 2018-11-12 | 2022-09-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
| CN116633602A (zh) * | 2023-05-11 | 2023-08-22 | 安徽东联信息技术有限公司 | 一种用于网络安全的隔离装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132546A (ja) * | 1984-07-25 | 1986-02-15 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
| JPS6422051A (en) * | 1987-07-17 | 1989-01-25 | Matsushita Electric Industrial Co Ltd | Manufacture of semiconductor device |
| JPH02222160A (ja) * | 1989-02-23 | 1990-09-04 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
| JPH05291395A (ja) * | 1992-04-10 | 1993-11-05 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH06342911A (ja) * | 1993-06-01 | 1994-12-13 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP2008172082A (ja) * | 2007-01-12 | 2008-07-24 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
| JP4772709B2 (ja) * | 2007-01-31 | 2011-09-14 | 株式会社東芝 | 半導体記憶装置 |
| JP2009016692A (ja) * | 2007-07-06 | 2009-01-22 | Toshiba Corp | 半導体記憶装置の製造方法と半導体記憶装置 |
-
2010
- 2010-07-20 JP JP2010163382A patent/JP2012028420A/ja active Pending
-
2011
- 2011-05-27 US US13/117,525 patent/US20120018783A1/en not_active Abandoned
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