JP2012015480A - 光電素子 - Google Patents

光電素子 Download PDF

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Publication number
JP2012015480A
JP2012015480A JP2010259153A JP2010259153A JP2012015480A JP 2012015480 A JP2012015480 A JP 2012015480A JP 2010259153 A JP2010259153 A JP 2010259153A JP 2010259153 A JP2010259153 A JP 2010259153A JP 2012015480 A JP2012015480 A JP 2012015480A
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JP
Japan
Prior art keywords
semiconductor
semiconductor unit
unit
electrode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010259153A
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English (en)
Japanese (ja)
Other versions
JP2012015480A5 (zh
Inventor
Hu Shen Cheng
シェン チェン−フ
Huaijin Cheng
ジン チャン−フェイ
Mn-Shun Shie
シエ ミン−シュン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/830,059 external-priority patent/US9324691B2/en
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2012015480A publication Critical patent/JP2012015480A/ja
Publication of JP2012015480A5 publication Critical patent/JP2012015480A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
JP2010259153A 2010-07-02 2010-11-19 光電素子 Pending JP2012015480A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/830,059 US9324691B2 (en) 2009-10-20 2010-07-02 Optoelectronic device
US12/830,059 2010-07-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015195552A Division JP6255372B2 (ja) 2010-07-02 2015-10-01 光電素子

Publications (2)

Publication Number Publication Date
JP2012015480A true JP2012015480A (ja) 2012-01-19
JP2012015480A5 JP2012015480A5 (zh) 2014-01-09

Family

ID=45349596

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010259153A Pending JP2012015480A (ja) 2010-07-02 2010-11-19 光電素子
JP2015195552A Active JP6255372B2 (ja) 2010-07-02 2015-10-01 光電素子
JP2020047220A Active JP7001728B2 (ja) 2010-07-02 2020-03-18 光電素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015195552A Active JP6255372B2 (ja) 2010-07-02 2015-10-01 光電素子
JP2020047220A Active JP7001728B2 (ja) 2010-07-02 2020-03-18 光電素子

Country Status (5)

Country Link
JP (3) JP2012015480A (zh)
KR (4) KR101616098B1 (zh)
CN (2) CN105977272B (zh)
DE (1) DE102010060269B4 (zh)
TW (3) TWI446527B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014096591A (ja) * 2012-11-09 2014-05-22 Lg Innotek Co Ltd 発光素子
JP2014131038A (ja) * 2012-12-27 2014-07-10 Lg Innotek Co Ltd 発光素子
JP2016021595A (ja) * 2010-07-02 2016-02-04 晶元光電股▲ふん▼有限公司 光電素子
JP2016039361A (ja) * 2014-08-07 2016-03-22 株式会社東芝 半導体発光素子
KR20180034017A (ko) * 2016-09-27 2018-04-04 서울바이오시스 주식회사 발광 다이오드

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633683B (zh) * 2013-08-27 2018-08-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
CN104681575A (zh) * 2013-11-29 2015-06-03 晶元光电股份有限公司 发光二极管元件
CN110676286B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件以及发光二极管
KR102480220B1 (ko) * 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
KR101987196B1 (ko) * 2016-06-14 2019-06-11 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR102363036B1 (ko) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN107516701B (zh) * 2017-07-14 2019-06-11 华灿光电(苏州）有限公司 一种高压发光二极管芯片及其制作方法
TWI731163B (zh) * 2017-09-13 2021-06-21 晶元光電股份有限公司 半導體元件

Citations (10)

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JPS5126483A (zh) * 1974-08-29 1976-03-04 Mitsubishi Electric Corp
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2005085548A (ja) * 2003-09-05 2005-03-31 Nichia Chem Ind Ltd 光源装置及び車両用前照灯
JP2008235894A (ja) * 2007-03-19 2008-10-02 Seoul Opto Devices Co Ltd 交流駆動型の発光ダイオード
JP2009519604A (ja) * 2005-12-16 2009-05-14 ソウル オプト デバイス カンパニー リミテッド 改善された透明電極構造体を有する交流駆動型発光ダイオード
JP2009531839A (ja) * 2006-03-31 2009-09-03 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光電式ヘッドライト、光電式ヘッドライトの製造方法と発光ダイオードチップ
JP2009231135A (ja) * 2008-03-24 2009-10-08 Toshiba Lighting & Technology Corp 照明装置
JP2010056195A (ja) * 2008-08-27 2010-03-11 Nichia Corp 半導体発光素子

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JP4415575B2 (ja) 2003-06-25 2010-02-17 日亜化学工業株式会社 半導体発光素子及びそれを用いた発光装置
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US8963175B2 (en) * 2008-11-06 2015-02-24 Samsung Electro-Mechanics Co., Ltd. Light emitting device and method of manufacturing the same
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP4566267B1 (ja) * 2009-04-21 2010-10-20 シャープ株式会社 電源装置
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
WO2011115361A2 (ko) * 2010-03-15 2011-09-22 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 장치
TWI446527B (zh) * 2010-07-02 2014-07-21 Epistar Corp 光電元件
JP5997737B2 (ja) * 2014-03-28 2016-09-28 株式会社インフォシティ コンテンツ再生装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126483A (zh) * 1974-08-29 1976-03-04 Mitsubishi Electric Corp
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2005085548A (ja) * 2003-09-05 2005-03-31 Nichia Chem Ind Ltd 光源装置及び車両用前照灯
JP2009519604A (ja) * 2005-12-16 2009-05-14 ソウル オプト デバイス カンパニー リミテッド 改善された透明電極構造体を有する交流駆動型発光ダイオード
JP2009531839A (ja) * 2006-03-31 2009-09-03 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光電式ヘッドライト、光電式ヘッドライトの製造方法と発光ダイオードチップ
JP2008235894A (ja) * 2007-03-19 2008-10-02 Seoul Opto Devices Co Ltd 交流駆動型の発光ダイオード
JP2009231135A (ja) * 2008-03-24 2009-10-08 Toshiba Lighting & Technology Corp 照明装置
JP2010056195A (ja) * 2008-08-27 2010-03-11 Nichia Corp 半導体発光素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016021595A (ja) * 2010-07-02 2016-02-04 晶元光電股▲ふん▼有限公司 光電素子
JP2020145432A (ja) * 2010-07-02 2020-09-10 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電素子
JP2014096591A (ja) * 2012-11-09 2014-05-22 Lg Innotek Co Ltd 発光素子
JP2014131038A (ja) * 2012-12-27 2014-07-10 Lg Innotek Co Ltd 発光素子
JP2016039361A (ja) * 2014-08-07 2016-03-22 株式会社東芝 半導体発光素子
KR20180034017A (ko) * 2016-09-27 2018-04-04 서울바이오시스 주식회사 발광 다이오드
KR102647673B1 (ko) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 발광 다이오드

Also Published As

Publication number Publication date
DE102010060269A1 (de) 2012-01-05
KR101616098B1 (ko) 2016-04-27
JP6255372B2 (ja) 2017-12-27
KR20160048745A (ko) 2016-05-04
TW201203534A (en) 2012-01-16
JP2020145432A (ja) 2020-09-10
KR101929867B1 (ko) 2019-03-14
JP2016021595A (ja) 2016-02-04
KR20120003352A (ko) 2012-01-10
TW201519473A (zh) 2015-05-16
CN105977272B (zh) 2021-01-01
TWI446527B (zh) 2014-07-21
TWI533474B (zh) 2016-05-11
KR20170035357A (ko) 2017-03-30
CN105977272A (zh) 2016-09-28
KR20180006625A (ko) 2018-01-18
CN102315239A (zh) 2012-01-11
CN102315239B (zh) 2016-08-17
TWI466284B (zh) 2014-12-21
DE102010060269B4 (de) 2020-10-01
TW201203533A (en) 2012-01-16
JP7001728B2 (ja) 2022-01-20

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