KR101616098B1 - 광전소자 - Google Patents
광전소자 Download PDFInfo
- Publication number
- KR101616098B1 KR101616098B1 KR1020100109073A KR20100109073A KR101616098B1 KR 101616098 B1 KR101616098 B1 KR 101616098B1 KR 1020100109073 A KR1020100109073 A KR 1020100109073A KR 20100109073 A KR20100109073 A KR 20100109073A KR 101616098 B1 KR101616098 B1 KR 101616098B1
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- 230000005693 optoelectronics Effects 0.000 title description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 388
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000009826 distribution Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims 9
- 238000010586 diagram Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000002773 nucleotide Substances 0.000 description 3
- 125000003729 nucleotide group Chemical group 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/830,059 | 2010-07-02 | ||
US12/830,059 US9324691B2 (en) | 2009-10-20 | 2010-07-02 | Optoelectronic device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160048075A Division KR20160048745A (ko) | 2010-07-02 | 2016-04-20 | 광전소자 |
Publications (2)
Publication Number | Publication Date |
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KR20120003352A KR20120003352A (ko) | 2012-01-10 |
KR101616098B1 true KR101616098B1 (ko) | 2016-04-27 |
Family
ID=45349596
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100109073A KR101616098B1 (ko) | 2010-07-02 | 2010-11-04 | 광전소자 |
KR1020160048075A KR20160048745A (ko) | 2010-07-02 | 2016-04-20 | 광전소자 |
KR1020170036303A KR101929867B1 (ko) | 2010-07-02 | 2017-03-22 | 광전소자 |
KR1020180002227A KR20180006625A (ko) | 2010-07-02 | 2018-01-08 | 광전소자 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160048075A KR20160048745A (ko) | 2010-07-02 | 2016-04-20 | 광전소자 |
KR1020170036303A KR101929867B1 (ko) | 2010-07-02 | 2017-03-22 | 광전소자 |
KR1020180002227A KR20180006625A (ko) | 2010-07-02 | 2018-01-08 | 광전소자 |
Country Status (5)
Country | Link |
---|---|
JP (3) | JP2012015480A (zh) |
KR (4) | KR101616098B1 (zh) |
CN (2) | CN102315239B (zh) |
DE (1) | DE102010060269B4 (zh) |
TW (3) | TWI466284B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI466284B (zh) * | 2010-07-02 | 2014-12-21 | Epistar Corp | 光電元件 |
KR20140059985A (ko) * | 2012-11-09 | 2014-05-19 | 엘지이노텍 주식회사 | 발광소자 |
KR101992366B1 (ko) * | 2012-12-27 | 2019-06-24 | 엘지이노텍 주식회사 | 발광 소자 |
TWI633683B (zh) * | 2013-08-27 | 2018-08-21 | 晶元光電股份有限公司 | 具有複數個發光結構之發光元件 |
TWI597864B (zh) | 2013-08-27 | 2017-09-01 | 晶元光電股份有限公司 | 具有複數個發光結構之發光元件 |
CN110047865B (zh) * | 2013-09-03 | 2024-02-23 | 晶元光电股份有限公司 | 具有多个发光结构的发光元件 |
CN104681575A (zh) * | 2013-11-29 | 2015-06-03 | 晶元光电股份有限公司 | 发光二极管元件 |
JP6351520B2 (ja) * | 2014-08-07 | 2018-07-04 | 株式会社東芝 | 半導体発光素子 |
CN110854250A (zh) * | 2015-02-13 | 2020-02-28 | 首尔伟傲世有限公司 | 发光元件 |
KR102647673B1 (ko) * | 2016-09-27 | 2024-03-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR102480220B1 (ko) * | 2016-04-08 | 2022-12-26 | 삼성전자주식회사 | 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널 |
KR101987196B1 (ko) * | 2016-06-14 | 2019-06-11 | 삼성디스플레이 주식회사 | 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법 |
KR102363036B1 (ko) * | 2017-04-03 | 2022-02-15 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
CN107516701B (zh) * | 2017-07-14 | 2019-06-11 | 华灿光电(苏州)有限公司 | 一种高压发光二极管芯片及其制作方法 |
TWI731163B (zh) * | 2017-09-13 | 2021-06-21 | 晶元光電股份有限公司 | 半導體元件 |
Citations (1)
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JP2010056195A (ja) * | 2008-08-27 | 2010-03-11 | Nichia Corp | 半導体発光素子 |
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US9324691B2 (en) * | 2009-10-20 | 2016-04-26 | Epistar Corporation | Optoelectronic device |
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TWI466284B (zh) * | 2010-07-02 | 2014-12-21 | Epistar Corp | 光電元件 |
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TW201203534A (en) | 2012-01-16 |
JP2012015480A (ja) | 2012-01-19 |
CN102315239B (zh) | 2016-08-17 |
KR20180006625A (ko) | 2018-01-18 |
KR20160048745A (ko) | 2016-05-04 |
DE102010060269B4 (de) | 2020-10-01 |
JP6255372B2 (ja) | 2017-12-27 |
JP2016021595A (ja) | 2016-02-04 |
CN105977272B (zh) | 2021-01-01 |
TWI533474B (zh) | 2016-05-11 |
TW201203533A (en) | 2012-01-16 |
TWI446527B (zh) | 2014-07-21 |
TW201519473A (zh) | 2015-05-16 |
JP7001728B2 (ja) | 2022-01-20 |
DE102010060269A1 (de) | 2012-01-05 |
JP2020145432A (ja) | 2020-09-10 |
TWI466284B (zh) | 2014-12-21 |
CN102315239A (zh) | 2012-01-11 |
KR20170035357A (ko) | 2017-03-30 |
KR101929867B1 (ko) | 2019-03-14 |
CN105977272A (zh) | 2016-09-28 |
KR20120003352A (ko) | 2012-01-10 |
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