JP2011529110A - エレクトロルミネセント材料および光学素子 - Google Patents
エレクトロルミネセント材料および光学素子 Download PDFInfo
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- JP2011529110A JP2011529110A JP2011519237A JP2011519237A JP2011529110A JP 2011529110 A JP2011529110 A JP 2011529110A JP 2011519237 A JP2011519237 A JP 2011519237A JP 2011519237 A JP2011519237 A JP 2011519237A JP 2011529110 A JP2011529110 A JP 2011529110A
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- aryl
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- 239000000463 material Substances 0.000 title claims abstract description 45
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- 125000001424 substituent group Chemical group 0.000 claims abstract description 18
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- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 12
- 239000002800 charge carrier Substances 0.000 claims abstract description 6
- 229920000642 polymer Polymers 0.000 claims description 63
- 239000000178 monomer Substances 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 11
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- 238000000034 method Methods 0.000 claims description 8
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- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
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- 150000004820 halides Chemical class 0.000 claims description 3
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- 125000000547 substituted alkyl group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
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- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 125000004001 thioalkyl group Chemical group 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
Description
− 9,9−ジアルキルフルオレン−2,7−ジイルのホモポリマーなどの第1の繰返し単位のホモポリマーは、電子輸送をするために利用し得る。
式(IX)を満足する特に好ましい単位には、式1〜3の単位:
ML1 qL2 rL3 s
(V)
[式中、Mは、金属であり、L1、L2およびL3の各々は、配位基であり、qは、整数であり、rおよびsは、各々独立に0または整数であり、(a.q)+(b.r)+(c.s)の和は、M上で利用できる配位部位の数に等しく、式中aは、L1上の配位部位の数であり、bは、L2上の配位部位の数であり、cは、L3上の配位部位の数である]の置換されていてもよい錯体を含む。
− セリウム、サマリウム、ユーロピウム、テルビウム、ジスプロシウム、ツリウム、エルビウムおよびネオジムなどのランタニド金属、ならびに
− dブロック金属、とりわけ第2列および第3列のもの、即ち39〜48番および72〜80番元素、とりわけルテニウム、ロジウム、パラジウム、レニウム、オスミウム、イリジウム、白金および金
が挙げられる。
ポリマー
モノマー1に基づく繰返し単位と式VIIIのフルオレン繰返し単位とを含むポリマーを、国際公開第00/53656号に記載のように鈴木重合により調製した。
3.5%モノマー1、16.5%モノマー3、30%モノマー4、50%モノマー5。
ポリスチレン標準に対する分子量:Mw 859k、Mp 779k、Mn 311k、Pd 2.78
比較のために、実施例3に従ってポリマーを調製したが、但し、モノマー1の代わりに下記の非縮合フェノキサジンモノマーを用いて、ポリマーを合成した。
3.5%モノマー2、16.5%モノマー3、30%モノマー4、50%モノマー5。
ポリスチレン標準に対する分子量:Mw 394k、Mp 343k、Mn 148k、Pd 2.59
ドイツ、レーバークーゼンのH C StarckからBaytron P(登録商標)として入手できるポリ(エチレンジオキシチオフェン)/ポリ(スチレンスルホネート)(PEDT/PSS)を、ガラス基板上に支持したインジウムスズ酸化物のアノード上に、スピンコーティングで堆積させた。式VIIIのフルオレン繰返し単位および式IXのアミン繰返し単位を含む正孔輸送層を、PEDT/PSS層上にキシレン溶液からスピンコーティングで堆積させ、180℃で1時間加熱した。ポリマー1を、正孔輸送層上にキシレン溶液からスピンコーティングで70nm前後の厚さに堆積させた。ポリマー1上に、酸化バリウムの第1層を約5nmまでの厚さに、およびアルミニウムバリウムの第2層を約100nmの厚さに蒸着することにより、BaO/Alカソードを形成した。最後に、気密シールを形成するために、素子上に置いて基板上に貼り付ける、ゲッターを含有する金属封止材を用いて、素子を密封する。
Claims (24)
- Ar1およびAr2の他方が、置換されていてもよい第2の更なるアリール系Ar4に縮合している、請求項1に記載のエレクトロルミネセントポリマー。
- Ar1および/またはAr2がフェニル基を含む、請求項1または2に記載のエレクトロルミネセントポリマー。
- Rが、水素、アルキル、アルコキシまたはアリールからなる群から選択される、請求項1、2または3のいずれかに記載のエレクトロルミネセントポリマー。
- Ar3およびAr4が、同じアリール系を含む、請求項2から4までのいずれかに記載のエレクトロルミネセントポリマー。
- 前記繰返し単位には対称性がない、請求項1から5までのいずれかに記載のエレクトロルミネセントポリマー。
- Ar3または存在している場合のAr4が、置換していてもよい更なる第3のアリール系Ar5に縮合し、更に共役している、請求項1から10までのいずれかに記載のエレクトロルミネセントポリマー。
- Ar3およびAr4の他方が、置換していてもよい更なる第4のアリール系Ar6に縮合し、共役している、請求項11に記載のエレクトロルミネセントポリマー。
- 前記ポリマーが共役ポリマーである、請求項1から16までのいずれかに記載のポリマー。
- 前記反応性基の1個または全てが、ハロゲン化物、ボロン酸エステルまたはボロン酸の基を含む、請求項18に記載のモノマー。
- 前記第2のモノマーを20mol%未満含む、エレクトロルミネセントポリマー。
- 正電荷担体を注入するための第1の電極、負電荷担体を注入するための第2の電極、ならびに第1および第2の電極の間に配置され、請求項1から16、20または21のいずれかに記載のエレクトロルミネセントポリマーを含む層を備える光学素子。
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JP2018531893A (ja) * | 2015-08-14 | 2018-11-01 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 有機エレクトロルミネッセンス素子のためのフェノキサジン誘導体 |
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- 2009-07-23 CN CN200980132736.1A patent/CN102131892B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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KR101499283B1 (ko) | 2015-03-05 |
CN102131892A (zh) | 2011-07-20 |
WO2010010356A2 (en) | 2010-01-28 |
GB0813656D0 (en) | 2008-09-03 |
KR20110043712A (ko) | 2011-04-27 |
US20110186826A1 (en) | 2011-08-04 |
JP5753490B2 (ja) | 2015-07-22 |
US8614011B2 (en) | 2013-12-24 |
GB2462122A (en) | 2010-01-27 |
GB2462122B (en) | 2013-04-03 |
WO2010010356A3 (en) | 2010-04-29 |
CN102131892B (zh) | 2016-05-04 |
DE112009001829T5 (de) | 2011-06-09 |
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