JP2011526077A5 - - Google Patents
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- Publication number
- JP2011526077A5 JP2011526077A5 JP2011516399A JP2011516399A JP2011526077A5 JP 2011526077 A5 JP2011526077 A5 JP 2011526077A5 JP 2011516399 A JP2011516399 A JP 2011516399A JP 2011516399 A JP2011516399 A JP 2011516399A JP 2011526077 A5 JP2011526077 A5 JP 2011526077A5
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- processing chamber
- substrate
- processing
- seconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 22
- 238000004140 cleaning Methods 0.000 claims 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 7
- 239000003361 porogen Substances 0.000 claims 6
- 239000001307 helium Substances 0.000 claims 5
- 229910052734 helium Inorganic materials 0.000 claims 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 238000005086 pumping Methods 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 230000000977 initiatory effect Effects 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- 238000010926 purge Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 claims 2
- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Natural products CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7653708P | 2008-06-27 | 2008-06-27 | |
| US61/076,537 | 2008-06-27 | ||
| US12/178,523 US20100018548A1 (en) | 2008-07-23 | 2008-07-23 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
| US12/178,523 | 2008-07-23 | ||
| PCT/US2009/046270 WO2009158169A1 (en) | 2008-06-27 | 2009-06-04 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011526077A JP2011526077A (ja) | 2011-09-29 |
| JP2011526077A5 true JP2011526077A5 (enExample) | 2012-07-19 |
| JP5572623B2 JP5572623B2 (ja) | 2014-08-13 |
Family
ID=41444874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011516399A Expired - Fee Related JP5572623B2 (ja) | 2008-06-27 | 2009-06-04 | 基板処理チャンバを洗浄する方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5572623B2 (enExample) |
| KR (1) | KR101631586B1 (enExample) |
| CN (1) | CN102077316A (enExample) |
| TW (1) | TWI465298B (enExample) |
| WO (1) | WO2009158169A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103109357B (zh) * | 2010-10-19 | 2016-08-24 | 应用材料公司 | 用于紫外线纳米固化腔室的石英喷洒器 |
| TWI476144B (zh) * | 2012-05-14 | 2015-03-11 | Univ Nat Taiwan | 週期性奈米孔洞狀結構陣列之製造方法及其用途 |
| CN104916522B (zh) * | 2014-03-10 | 2017-12-22 | 中芯国际集成电路制造(上海)有限公司 | 去除hasti制备过程中形成的残留颗粒的方法 |
| JP7304768B2 (ja) * | 2019-08-16 | 2023-07-07 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置および熱処理装置の洗浄方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6254689B1 (en) * | 1999-03-09 | 2001-07-03 | Lucent Technologies Inc. | System and method for flash photolysis cleaning of a semiconductor processing chamber |
| US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| TW535222B (en) * | 2002-06-11 | 2003-06-01 | Toppoly Optoelectronics Corp | Method for depositing thin film using plasma chemical vapor deposition |
| US6911233B2 (en) * | 2002-08-08 | 2005-06-28 | Toppoly Optoelectronics Corp. | Method for depositing thin film using plasma chemical vapor deposition |
| TW200410337A (en) * | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
| US7265061B1 (en) * | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
| US20050161060A1 (en) * | 2004-01-23 | 2005-07-28 | Johnson Andrew D. | Cleaning CVD chambers following deposition of porogen-containing materials |
| TWI424460B (zh) * | 2004-06-18 | 2014-01-21 | Axcelis Tech Inc | 用於處理介電材料之設備及製程 |
| US7709814B2 (en) * | 2004-06-18 | 2010-05-04 | Axcelis Technologies, Inc. | Apparatus and process for treating dielectric materials |
| US20060249175A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
| US20060251827A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
| US20070134435A1 (en) * | 2005-12-13 | 2007-06-14 | Ahn Sang H | Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films |
| US7909595B2 (en) * | 2006-03-17 | 2011-03-22 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections |
| JP5258241B2 (ja) * | 2006-09-19 | 2013-08-07 | 日本エー・エス・エム株式会社 | Ｕｖ照射チャンバーをクリーニングする方法 |
-
2009
- 2009-06-04 KR KR1020117002159A patent/KR101631586B1/ko active Active
- 2009-06-04 JP JP2011516399A patent/JP5572623B2/ja not_active Expired - Fee Related
- 2009-06-04 CN CN200980125854XA patent/CN102077316A/zh active Pending
- 2009-06-04 WO PCT/US2009/046270 patent/WO2009158169A1/en not_active Ceased
- 2009-06-23 TW TW098121035A patent/TWI465298B/zh active
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