KR101631586B1 - 기판 성능에 대한 높은 처리량 및 안정한 기판을 위한 급속 주기적 및 포괄적 후 다중 기판 ｕｖ-오존 세정 시퀀스들의 중첩 - Google Patents

기판 성능에 대한 높은 처리량 및 안정한 기판을 위한 급속 주기적 및 포괄적 후 다중 기판 ｕｖ-오존 세정 시퀀스들의 중첩 Download PDF

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Publication number
KR101631586B1
KR101631586B1 KR1020117002159A KR20117002159A KR101631586B1 KR 101631586 B1 KR101631586 B1 KR 101631586B1 KR 1020117002159 A KR1020117002159 A KR 1020117002159A KR 20117002159 A KR20117002159 A KR 20117002159A KR 101631586 B1 KR101631586 B1 KR 101631586B1
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South Korea
Prior art keywords
chamber
substrate
cleaning
process chamber
processing
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Korean (ko)
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KR20110025227A (ko
Inventor
상 인 이
켈빈 챈
토마스 노왁
알렉산드로스 티. 데모스
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어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US12/178,523 external-priority patent/US20100018548A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110025227A publication Critical patent/KR20110025227A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
KR1020117002159A 2008-06-27 2009-06-04 기판 성능에 대한 높은 처리량 및 안정한 기판을 위한 급속 주기적 및 포괄적 후 다중 기판 ｕｖ-오존 세정 시퀀스들의 중첩 Active KR101631586B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US7653708P 2008-06-27 2008-06-27
US61/076,537 2008-06-27
US12/178,523 US20100018548A1 (en) 2008-07-23 2008-07-23 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
US12/178,523 2008-07-23

Publications (2)

Publication Number Publication Date
KR20110025227A KR20110025227A (ko) 2011-03-09
KR101631586B1 true KR101631586B1 (ko) 2016-06-17

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KR1020117002159A Active KR101631586B1 (ko) 2008-06-27 2009-06-04 기판 성능에 대한 높은 처리량 및 안정한 기판을 위한 급속 주기적 및 포괄적 후 다중 기판 ｕｖ-오존 세정 시퀀스들의 중첩

Country Status (5)

Country Link
JP (1) JP5572623B2 (enExample)
KR (1) KR101631586B1 (enExample)
CN (1) CN102077316A (enExample)
TW (1) TWI465298B (enExample)
WO (1) WO2009158169A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
TWI476144B (zh) * 2012-05-14 2015-03-11 Univ Nat Taiwan 週期性奈米孔洞狀結構陣列之製造方法及其用途
CN104916522B (zh) * 2014-03-10 2017-12-22 中芯国际集成电路制造(上海)有限公司 去除hasti制备过程中形成的残留颗粒的方法
JP7304768B2 (ja) * 2019-08-16 2023-07-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理装置の洗浄方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
JP2005210130A (ja) 2004-01-23 2005-08-04 Air Products & Chemicals Inc 半導体材料処理室における装置表面のクリーニング方法
US20060249175A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
JP2008075179A (ja) 2006-09-19 2008-04-03 Asm Japan Kk Ｕｖ照射チャンバーをクリーニングする方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
TW535222B (en) * 2002-06-11 2003-06-01 Toppoly Optoelectronics Corp Method for depositing thin film using plasma chemical vapor deposition
US6911233B2 (en) * 2002-08-08 2005-06-28 Toppoly Optoelectronics Corp. Method for depositing thin film using plasma chemical vapor deposition
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7265061B1 (en) * 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
TWI424460B (zh) * 2004-06-18 2014-01-21 Axcelis Tech Inc 用於處理介電材料之設備及製程
US7709814B2 (en) * 2004-06-18 2010-05-04 Axcelis Technologies, Inc. Apparatus and process for treating dielectric materials
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7909595B2 (en) * 2006-03-17 2011-03-22 Applied Materials, Inc. Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
JP2005210130A (ja) 2004-01-23 2005-08-04 Air Products & Chemicals Inc 半導体材料処理室における装置表面のクリーニング方法
US20060249175A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
JP2008075179A (ja) 2006-09-19 2008-04-03 Asm Japan Kk Ｕｖ照射チャンバーをクリーニングする方法

Also Published As

Publication number Publication date
KR20110025227A (ko) 2011-03-09
CN102077316A (zh) 2011-05-25
JP2011526077A (ja) 2011-09-29
TWI465298B (zh) 2014-12-21
WO2009158169A1 (en) 2009-12-30
TW201008671A (en) 2010-03-01
JP5572623B2 (ja) 2014-08-13

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