JP2011526077A - 高スループットおよび安定な基板ごとの性能のための、急速で周期的な基板uv−オゾン洗浄シーケンスと、包括的な後続の多重の基板uv−オゾン洗浄シーケンスとの重ね合わせ - Google Patents
高スループットおよび安定な基板ごとの性能のための、急速で周期的な基板uv−オゾン洗浄シーケンスと、包括的な後続の多重の基板uv−オゾン洗浄シーケンスとの重ね合わせ Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Abstract
Description
Claims (15)
- 1バッチの基板の、1つまたは複数の処理領域を画定する処理チャンバ内での処理であって、
前記バッチからの基板を前記処理チャンバ内で処理することと、
前記基板を前記処理チャンバから取り除くことと、
オゾンの前記処理チャンバ内への導入および前記チャンバの紫外光に対する1分未満の間の暴露を含む離散的洗浄処理を開始することと、
前述の諸ステップをバッチ内の最後の基板が処理されるまで繰り返すこととをさらに含む、処理と、
前記バッチ内の前記最後の基板を処理した後の、前記最後の基板の前記処理チャンバからの除去と、
オゾンの前記処理チャンバ内への導入および前記処理チャンバの紫外光に対する3分間から15分間の暴露を含む、バッチ洗浄処理の開始と
を含む、基板処理チャンバを洗浄する方法。 - 前記基板を処理することが、前に前記基板上に堆積されたポリマーからポロゲンを取り除くことを含む、請求項1に記載の方法。
- 前記基板を処理することが、
前記チャンバを5Torrまで加圧することと、
前記チャンバを385℃まで加熱することと、
ヘリウムを前記チャンバ内に、10標準リットル/分で導入することと、
アルゴンを前記チャンバ内に、10標準リットル/分で導入することと、
前記チャンバを紫外光に165秒間暴露することと
をさらに含む、請求項1に記載の方法。 - 前記チャンバが、前記離散的洗浄処理の間に、15秒間から30秒間、紫外光に暴露される、請求項1に記載の方法。
- 前記離散的洗浄処理が、
前記チャンバを5Torrまで加圧することと、
前記チャンバを385℃まで加熱することと、
オゾンを前記チャンバ内に、10標準リットル/分で導入することと、
前記チャンバを紫外光に15秒間暴露することと、
前記チャンバを10標準リットル/分のヘリウムで10秒間浄化することと、
前記チャンバを10秒間ポンピングすることと
をさらに含む、請求項1に記載の方法。 - 前記バッチ洗浄処理が、
前記チャンバを5Torrまで加圧することと、
前記チャンバを385℃まで加熱することと、
オゾンを前記チャンバ内に、10標準リットル/分で導入することと、
前記チャンバを紫外光に6分間暴露することと、
をさらに含む、請求項1に記載の方法。 - 前記1バッチの基板が基板13枚を含む、請求項1に記載の方法。
- オゾンを前記処理領域から離れて生成することをさらに含む、請求項1に記載の方法。
- オゾンの前記チャンバ内への導入が、酸素の紫外光による活性化を含む、請求項1に記載の方法。
- メチルジエトキシシランおよびアルファテルピネンを含む前駆体ガスの、第1の処理チャンバへの流入と、
前記第1のチャンバ内における、ポリマー膜の基板上への堆積と、
1つまたは複数の処理領域を画定する第2の処理チャンバ内における、前記ポリマー膜を有する1バッチの基板の処理であって、
前記バッチからの基板を前記第2の処理チャンバ内で処理することと、
前記基板を前記第2の処理チャンバから取り除くことと、
オゾンの前記第2の処理チャンバ内への導入および前記第2の処理チャンバの紫外光に対する1分未満の間の暴露を含む離散的洗浄処理を開始することと、
前述の諸ステップを、前記バッチ内の前記最後の基板が処理されるまで繰り返すこととをさらに含む、処理と、
前記バッチ内の前記最後の基板を処理した後の、前記最後の基板の前記第2の処理チャンバからの除去と、
オゾンの前記第2の処理チャンバ内への導入および前記第2の処理チャンバの紫外光に対する3分間から15分間の暴露を含む、バッチ洗浄処理の開始と
を含む、基板処理チャンバを洗浄する方法。 - 前記基板を処理することが、前記基板上に堆積された前記ポリマー膜からポロゲンを取り除くことを含む、請求項10に記載の方法。
- 前記1バッチの基板の処理が、
前記第2のチャンバを5Torrまで加圧することと、
前記第2のチャンバを385℃まで加熱することと、
ヘリウムを前記第2のチャンバ内に、10標準リットル/分で導入することと、
アルゴンを前記第2のチャンバ内に、10標準リットル/分で導入することと、
前記第2のチャンバを紫外光に165秒間暴露することと
を含む、請求項10に記載の方法。 - 前記離散的洗浄処理が、
前記第2のチャンバを5Torrまで加圧することと、
前記第2のチャンバを385℃まで加熱することと、
オゾンを前記第2のチャンバ内に、10標準リットル/分で導入することと、
前記第2のチャンバを紫外光に15秒間暴露することと
前記第2のチャンバを、10標準リットル/分のヘリウムで、10秒間浄化することと
前記第2のチャンバを10秒間ポンピングすることと
をさらに含む、請求項10に記載の方法。 - 前記バッチ洗浄処理が、
前記第2のチャンバを5Torrまで加圧することと、
前記第2のチャンバを385℃まで加熱することと、
オゾンを前記第2のチャンバ内に、10標準リットル/分で導入することと、
前記第2のチャンバを紫外光に6分間暴露することと
をさらに含む、請求項10に記載の方法。 - 1つまたは複数の処理領域を画定する処理チャンバと、
実行されると、基板処理チャンバに、1バッチの基板を前記処理チャンバ内で処理させる命令を含む、コンピュータ可読媒体を備える制御器であって、前記処理が、
前記バッチからの基板を前記処理チャンバ内で処理することと、
前記基板を前記処理チャンバから取り除くことと、
オゾンの前記処理チャンバ内への導入および前記チャンバの紫外光に対する1分未満の間の暴露を含む離散的洗浄処理を開始することと、
前述の諸ステップを、前記バッチ内の前記最後の基板が処理されるまで繰り返すことと、
前記バッチ内の前記最後の基板を処理した後に、前記最後の基板を前記処理チャンバから取り除くことと
オゾンの前記処理チャンバ内への導入および前記処理チャンバの紫外光に対する3分間から15分間の暴露を含むバッチ洗浄処理を開始することとを含む、制御器と
を備える、基板処理チャンバ。
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US12/178,523 US20100018548A1 (en) | 2008-07-23 | 2008-07-23 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
US12/178,523 | 2008-07-23 | ||
PCT/US2009/046270 WO2009158169A1 (en) | 2008-06-27 | 2009-06-04 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
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JP2013541849A (ja) * | 2010-10-19 | 2013-11-14 | アプライド マテリアルズ インコーポレイテッド | Nanocureuvチャンバ用の石英シャワーヘッド |
CN112397415A (zh) * | 2019-08-16 | 2021-02-23 | 株式会社斯库林集团 | 热处理装置及热处理装置的洗净方法 |
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TWI476144B (zh) * | 2012-05-14 | 2015-03-11 | Univ Nat Taiwan | 週期性奈米孔洞狀結構陣列之製造方法及其用途 |
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JP2008075179A (ja) * | 2006-09-19 | 2008-04-03 | Asm Japan Kk | Uv照射チャンバーをクリーニングする方法 |
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JP2013541849A (ja) * | 2010-10-19 | 2013-11-14 | アプライド マテリアルズ インコーポレイテッド | Nanocureuvチャンバ用の石英シャワーヘッド |
CN112397415A (zh) * | 2019-08-16 | 2021-02-23 | 株式会社斯库林集团 | 热处理装置及热处理装置的洗净方法 |
JP2021034416A (ja) * | 2019-08-16 | 2021-03-01 | 株式会社Screenホールディングス | 熱処理装置および熱処理装置の洗浄方法 |
JP7304768B2 (ja) | 2019-08-16 | 2023-07-07 | 株式会社Screenホールディングス | 熱処理装置および熱処理装置の洗浄方法 |
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TWI465298B (zh) | 2014-12-21 |
JP5572623B2 (ja) | 2014-08-13 |
KR101631586B1 (ko) | 2016-06-17 |
TW201008671A (en) | 2010-03-01 |
WO2009158169A1 (en) | 2009-12-30 |
CN102077316A (zh) | 2011-05-25 |
KR20110025227A (ko) | 2011-03-09 |
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