201008671 . 六、發明說明： 【發明所屬之技術領域】 本發明實施例大體而言係有關於一種清潔一基材處理 室的方法。更明確地說，本發明實施例係有關於在用來 執行基材上之介電薄膜之硬化製程的紫外光室内清潔表 面的方法。 φ 【先前技術】 具有低介電常數（低k)的材料’例如氧化珍（si〇x)、碳 化梦（SiCx)、及摻雜碳的氧化珍（Si〇Cx)，非常廣泛使用 在半導艘元件的製造中。使用低k材料做為導電内連線 之間的金屬導線間及/或層間介電層可因為電容效應而 減少訊號傳遞的延遲◊介電層的介電常數越低，介電質 的電容就越低，並且積體電路（1C)的Rc(阻容）延遲就越 低.。 Ο 低介電常數介電材料一般定義為介電常數k低於二氧 化梦者的材料-也就是k<4 ’得到低k材料的典型方法包 含以含碳或氟之多種官能基摻雜二氧化矽。氟化石夕酸鹽 坡璃(FSG)通常擁有3.5-3.9的k值，但碳掺雜方法可進 —步將k值降低至約2.5。目前致办於發展低k介電材 料，通常稱為超低k(ULK)介電質，具有用於最先進技術 所需之低於2.5的让值〇 一種在半導體基材上形成含梦薄膜的方法是透:過在一 201008671 腔室内的化學氣相沈積（CVD)製程。常在含矽薄膜cvd 期間制有級供給㈣。由於此種♦供給㈣内存有 碳’該腔室壁及該基材上可形成含碳薄膜。 此外，可藉由在一低k介電基質中併入氣隙，產生一 . 多孔介電材料來取得超低fc(uLK)介電材料。製造多孔介 • 電質的方法通常包含形成含有兩種成分的，，前驅薄膜”： 一成孔劑（通常是一種有機材料，例如碳氳化合物）及一 Φ 結構形成劑或介電材料（例如，一種含發材料）》一旦該 前驅物薄膜形成在該基材上，即可除去該成孔劑成分， 留下一結構未受影響的多孔介電基質或網狀氧化物 (oxide network)。 從前驅物薄膜除去成孔劑的技術包含，例如，一種熱 製程，其中該基材被加熱至足以讓該有機成孔劑分解及 揮發的溫度。從前驅物薄膜除去成孔劑之一已知熱製程 包含紫外線硬化製程’以辅助CVD氧化矽薄膜的後處 籲 理。例如，美國專利第6,566,278號及第6,614，181號， 兩者皆核准予應用材料公司並且在此將其全文併入本文 中，描述使用紫外光來進行CVD摻雜碳的氧化梦薄膜之 後處理。 . 但是，在用來除去成孔劑的紫外線硬化製程之後，該 紫外線處...理室可能.會塗覆上完整.的..成孔.劑、成扎劑.的破 裂碎片、及其他成孔劑殘餘物’包含塗覆讓紫外線可以 抵達該基材的視窗。隨著時間過去’該.成孔劑殘餘物會 因為降低基材可得之有效UV強度和累積在該腔室的較 201008671 冷部件上而降低後續紫外線成孔劑移除製程的效力。此 外’成孔劑殘餘物在該視窗上的累積是不平均的，造成 該基材上之薄膜不平均硬化。再者，過量殘餘物在該腔 室内的累積會是該基材上之微粒缺陷的來源，其不適於 半導體處理。據此’必須從處理室除去熱性質不穩定之 犧牲材料的有機碎片。 因此，也需要在一製造環境中之uv成孔劑移除製程 Φ 後適切地清潔處理室的方法及設備。所以，技藝中存有 對於一種紫外線腔室的需要，其可增加產量、消耗最少 能量且適於在該腔室自身内進行表面之原位清潔製程。 【發明内容】 本發明實施例大體而言提供一種清潔一基材處理室的 方法。在一實施例中’該方法包含在該處理室内處理一 批-人基材，其中處理該批次基材包含一連串步驟。首先， •在該處理至内處理來自該批次之_基材^接下來，從該 處理室移出該基材，然後通入臭氧至該處理室内，並將 該處理室暴露在紫外光下低於一分鐘。重覆先前的處理 該批次内之一基材、從該處理室内移出該基材、通入臭 該處理室内、以及將該處理室暴露在紫外光下低終 刀鐘等步驟直到處理完該批次内的最後一個基材為 止就實質上低逸氣基材而言，該低於—分鐘的快速清 潔可週期性執行，硬化每兩個或每三個基材後。在處理 201008671 該批次内的最後一個基材之後，從該處理室移出該最後 一個基材。接下來，再次通入臭氧至該處理室内然後 將該處理室暴露在紫外光下三至十五分鐘。 在另一實施例中，本發明提供一種基材處理室，其界 定出一或多個處理區，並包含一控制器，其含有一電腦 . 可讀媒體。該電腦可讀媒體含有多個指令，當執行該些 時，其使該基材處理室在該處理室内處理一批次基材。 φ 處理該批次基材包含一連串步驟。首先，在該處理室内 處理來自該批次之一基材。接下來，從該處理室移出該 基材，然後通入臭氧至該處理室内，並將該處理室暴露 在紫外光下低於一分鐘。重複先前的處理該批次内之一 基材、從該處理室内移出該基材、通人臭氧至該處理室 内、以及將該處理室暴露在紫外光下低於一分鐘等步琢 直到處理完該批次㈣最.後-個基材為h在處理該批 次内的最後-個基材之後，從該處理室移出該最後一個 • 基材。接下來，再次通入臭氧至該處理室内然後將該 處理室暴露在紫外光下三至十五分鐘。 【實施方式】 本發明實施例包含利用紫外光及臭氧清潔一基材處理 室的方法，錢善基材品質並大幅降低處理室停機時間 ，持產量。可藉由除去殘餘物累積有效清潔該處理 至壁、紫外線視窗、以及底座，特別是在該處理室的冰 201008671 冷區域，其通常會隨著時間過去發生較多的殘餘#累、 積。雖然可用本發明來清潔任何處理室，但成孔劑的紫 外線（uv)硬化形成的殘餘物可利用本發明實施例完全清 除.。 在用來進行紫外線硬化的處理室之一實施例中，一串 接處理室提供兩個分離且鄰接的處理區在一腔室主體 内’以及一上蓋，擁有一或多個燈泡隔離視窗，分別對 鲁 齊在每一個處理區上方。該等燈泡隔離視窗可以該串接 處理室的每一側有一個視窗的方式實施，以在一個大的 共同空間中將一或多個燈泡跟基材隔離開，或是讓一個 燈泡陣列的每一個燈泡密封在與一處理區直接接觸的紫 外線透明封罩内。每個處理區的一或多個紫外線燈炮可 由與該上蓋連結的外罩覆蓋，並發射紫外光，其被導經 該等視窗至設置在每一個處理區内的每一徊基材上。 該等紫外線燈泡可以是一發先二極體陣列，或者是使 • 用任何尖端紫外線照明源的燈泡，包含但不限於，微波 電弧、射頻燈絲（電容耦合電衆）及感應耦合電漿（ICp) 燈此外，可在硬化製程期間脈衝紫外光。強化基材照 明均勻性的各種概念包含使用燈陣列，其也可用來改變 入射光的波長分佈，基材和燈頭的相對琿動包含旋轉 和週期性移動（掃掠），及燈反射體形狀及/或位置的即 時調整。. 硬化製程期間形成的殘餘物可含碳，例如碳和砍兩 者’並且係利用基於臭氧的清潔來除去。所需臭氧的產 201008671 生可利用將臭氧運輸至該硬化室的方式遠端執行，原位 產生’或是同時執行這兩種方法來完成。遠端產生臭氧 的方法可利用任何既存臭氧產生技術來完成，包含但不 限於’介電阻障/電暈放電（例如應用材料的〇z〇nat〇r) 或紫外線活化反應器。也可使用用來硬化介電材料的紫 外線燈泡及/或可設置在遠端的其他紫外線燈泡來產生 臭氧。 第1圓示出可使用本發明實施例之半導趙處理系統 100的平面圖。該系統100示出可從加州聖塔克拉拉的 應用材料公司購得的Producer™處理系統之一實施例。該 處理系統100係一整裝（self_contained)系統，具有支律 在一主框架結構101上的必要處理設備。該處理系統 通常包含一前端活動區102，在此支撐基材匣1〇9並且 將基材載入及載出一負載鎮定室112，一移送室，容 納一基材處理器113，一系列串接處理室1〇6，裝設在該 移送室111上，以及一後端138，其容衲該系統1〇〇操作 所需的支持設備，例如氣體分配盤1〇3，和功率分佈盤 105。 每一個串接處理室1〇6包含兩個處理區，以處理基材 (見第3圖卜該兩個處理區分享共同的氣體供應共同 的壓力控制、以及共同的製程氣體排氣/幫浦系統、該 系統的模組化設計使其可從任一種配置快速轉變成任何 其他配置。可為執行特定製程步驟而改變處理室的設置 和組β任何串接處理室1〇6可包含根據如下描述之 201008671 發明態樣的上蓋’其包含一或多個紫外線燈，以用於基 材上的低介電常數材料的硬化製程及/或用於腔室清潔 製程。在一實施例中’所有三個串接處理室106均有紫 外線燈’並且係經配置為紫外線硬化腔室，以同步運轉 而.有最大產.量。 在並非所有串接處理室1〇6均配置為紫外線硬化室的 另一實施例中’該系統1〇〇可適於具備一或多個串接處 理室’其擁有已知可適用於其他已知製程的支持腔室硬 體’例如化學氣相沈積（CVD)、物理氣相沈積（pvd)、姓 刻、及諸如此類。例如’可配置該系統丨〇〇而使該等串 接處理室之一做為CVD腔室以在基材上沈積材料，例如 低介電常數（K)薄膜。此種配置可最大化研發製造用途， 並且若希望，讓初沈積的薄膜不會暴露在大氣中。 一控制器140,含有一中央處理單元（cpu)144、一記 憶體142、以及支持電路146，與該半導體處理系統1〇〇 的各個零組件連結，以促進對本發明製程的控制。該記 憶體142可以是任何電腦可讀㈣，例如隨機存取記憶 體（RAM)、唯讀記憶髏（R〇M)、軟碟、硬碟、或任何其他 形式的數位儲存器，對於該半導體處理系統1〇〇或cpu 而言近端或遠端的1該等支持電路i46係與該cpu 144連結’以利用習知方式支持該cpu。該等電路包含 快取、電源、時鐘電路、輸入/輪出電路和子系統、及 諸如此類。儲存在該記憶體142内的軟體常式或一系列 程式指令’由該CPU 144執行時，使該等紫外線硬化串 201008671 接處理室106執行本發明製程。201008671. VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention generally relate to a method of cleaning a substrate processing chamber. More specifically, embodiments of the present invention relate to a method of cleaning a surface in an ultraviolet light chamber for performing a hardening process of a dielectric film on a substrate. φ [Prior Art] Materials with low dielectric constant (low k) such as oxidized (si〇x), carbonized dream (SiCx), and doped carbon oxidized (Si〇Cx), are widely used in half. The manufacture of the navigational components. The use of a low-k material as a metal interconnect between the conductive interconnects and/or an interlayer dielectric layer can reduce the delay of signal transfer due to capacitive effects. The lower the dielectric constant of the dielectric layer, the lower the dielectric capacitance The lower, and the lower the Rc (resistance-capacitance) delay of the integrated circuit (1C). Ο Low dielectric constant dielectric materials are generally defined as materials with a dielectric constant k lower than that of a dioxide dioxide--that is, k<4'. A typical method for obtaining low-k materials involves doping with a plurality of functional groups containing carbon or fluorine. Yttrium oxide. Fluorite fluorite (FSG) typically has a k value of 3.5-3.9, but the carbon doping method can further reduce the k value to about 2.5. Currently in the development of low-k dielectric materials, commonly referred to as ultra-low-k (ULK) dielectrics, with a value of less than 2.5 for state-of-the-art technology, a dream on a semiconductor substrate The method of thin film is: through a chemical vapor deposition (CVD) process in a chamber of 201008671. A graded supply (4) is often produced during the cvd-containing film. Since the ♦ supply (4) has carbon in the memory, a carbon-containing film can be formed on the chamber wall and the substrate. In addition, an ultra-low fc(uLK) dielectric material can be obtained by incorporating an air gap into a low-k dielectric matrix to produce a porous dielectric material. The method of making porous dielectrics typically involves the formation of a precursor film comprising two components: a pore former (usually an organic material such as a carbonium compound) and a Φ structure former or dielectric material (eg , a hair-containing material). Once the precursor film is formed on the substrate, the pore former component can be removed leaving a porous dielectric matrix or oxide network having an unaffected structure. Techniques for removing porogen from a precursor film include, for example, a thermal process wherein the substrate is heated to a temperature sufficient to decompose and volatilize the organic pore former. One of the pore formers removed from the precursor film is known. The thermal process includes a UV-curing process to aid in the CVD of the ruthenium oxide film. For example, U.S. Patent Nos. 6,566,278 and 6,614,181, both of which are incorporated herein by reference. In the following, the use of ultraviolet light for CVD doping of carbon oxidized dream film is described. However, after the ultraviolet curing process for removing the pore former, the ultraviolet At the line...the room may be coated with a complete .. hole, agent, rupture debris, and other porogen residues' containing coating to allow ultraviolet light to reach the substrate. Window. Over time, the porogen residue will reduce the effectiveness of the subsequent UV porogen removal process by reducing the effective UV intensity available to the substrate and accumulating on the 201008671 cold part of the chamber. In addition, the accumulation of the pore former residue on the window is uneven, causing the film on the substrate to be unevenly hardened. Furthermore, the accumulation of excess residue in the chamber may be a particle defect on the substrate. The source is not suitable for semiconductor processing. According to this, it is necessary to remove organic fragments of the sacrificial material with unstable thermal properties from the processing chamber. Therefore, it is also necessary to clean the uv porogen removal process Φ in a manufacturing environment. A method and apparatus for processing a chamber. Therefore, there is a need in the art for an ultraviolet chamber that increases throughput, consumes minimal energy, and is suitable for in-situ cleaning of the surface within the chamber itself. Embodiments of the present invention generally provide a method of cleaning a substrate processing chamber. In one embodiment, the method includes processing a batch of a human substrate in the processing chamber, wherein processing the batch of substrates comprises a series of steps First, • processing the substrate from the batch in the process. Next, removing the substrate from the processing chamber, then introducing ozone into the processing chamber, and exposing the processing chamber to ultraviolet light. Less than one minute. Repeating the previous processing of one of the substrates in the batch, removing the substrate from the processing chamber, passing into the processing chamber, and exposing the processing chamber to ultraviolet light, low-end knife, etc. The step is until the substantially low outgassing substrate is processed until the last substrate in the batch is processed, and the sub-minute rapid cleaning can be performed periodically, after hardening every two or three substrates. After processing the last substrate in the batch of 201008671, the last substrate is removed from the processing chamber. Next, ozone is again introduced into the processing chamber and the chamber is exposed to ultraviolet light for three to fifteen minutes. In another embodiment, the present invention provides a substrate processing chamber that defines one or more processing zones and includes a controller that includes a computer. The computer readable medium contains a plurality of instructions that, when executed, cause the substrate processing chamber to process a batch of substrates within the processing chamber. φ Processing the batch of substrates involves a series of steps. First, one of the substrates from the batch is processed in the processing chamber. Next, the substrate is removed from the processing chamber, then ozone is introduced into the processing chamber, and the processing chamber is exposed to ultraviolet light for less than one minute. Repeating the previous process of treating one of the substrates in the batch, removing the substrate from the processing chamber, passing ozone into the processing chamber, and exposing the processing chamber to ultraviolet light for less than one minute until the treatment is completed. The batch (four) most. the last substrate is h. After processing the last substrate in the batch, the last substrate is removed from the processing chamber. Next, ozone is again introduced into the processing chamber and the chamber is exposed to ultraviolet light for three to fifteen minutes. [Embodiment] Embodiments of the present invention include a method of cleaning a substrate processing chamber by using ultraviolet light and ozone, and the quality of the substrate is substantially reduced, and the processing room downtime is maintained, and the yield is maintained. The treatment can be effectively cleaned by removing the residue accumulation to the wall, the UV window, and the base, particularly in the cold zone of the 201008671 ice of the process chamber, which typically has more residual # accumulation and accumulation over time. While any of the processing chambers can be cleaned by the present invention, the residue formed by the ultraviolet (uv) hardening of the porogen can be completely removed using embodiments of the present invention. In one embodiment of a processing chamber for UV curing, a series of processing chambers provides two separate and adjacent processing zones in a chamber body and an upper cover having one or more bulb isolation windows, respectively To Ruqi is above each processing area. The bulb isolation windows may be implemented by a window on each side of the series of processing chambers to isolate one or more bulbs from the substrate in a large common space, or to have a bulb array A bulb is sealed in an ultraviolet transparent enclosure that is in direct contact with a processing zone. One or more UV bulbs of each processing zone may be covered by a cover coupled to the upper cover and emit ultraviolet light that is directed through the windows to each of the substrates disposed in each of the processing zones. These UV bulbs can be a first-in-one diode array or a bulb that can be used with any cutting-edge UV illumination source, including but not limited to, microwave arc, RF filament (capacitively coupled current) and inductively coupled plasma (ICp). In addition, the lamp can be pulsed with ultraviolet light during the hardening process. Various concepts for enhancing substrate illumination uniformity include the use of an array of lamps that can also be used to change the wavelength distribution of incident light. The relative turbulence of the substrate and the lamp head includes rotation and periodic movement (sweep), and the shape of the lamp reflector and / or immediate adjustment of the location. The residue formed during the hardening process may contain carbon, such as carbon and chopped, and is removed using ozone-based cleaning. The production of ozone required 201008671 can be performed remotely by transporting ozone to the hardened chamber, in situ or both. The method of generating ozone at the distal end can be accomplished using any existing ozone generating technique, including but not limited to 'dielectric resistance/corona discharge (e.g., 〇z〇nat〇r for applied materials) or ultraviolet activated reactor. It is also possible to use an ultraviolet bulb for hardening the dielectric material and/or other ultraviolet bulbs that can be placed at the distal end to generate ozone. The first circle shows a plan view of a semiconductor wafer processing system 100 in which embodiments of the present invention may be used. The system 100 illustrates one embodiment of a ProducerTM processing system available from Applied Materials, Inc. of Santa Clara, California. The processing system 100 is a self-contained system having the necessary processing equipment on a main frame structure 101. The processing system typically includes a front active area 102 where the substrate 支撑1〇9 is supported and a substrate is loaded and unloaded into a load stabilization chamber 112, a transfer chamber containing a substrate handler 113, a series of strings Connected to the processing chamber 1〇6, mounted on the transfer chamber 111, and a rear end 138 that accommodates supporting equipment required for the operation of the system, such as the gas distribution tray 1〇3, and the power distribution disc 105 . Each of the tandem processing chambers 1〇6 contains two processing zones for processing the substrate (see Figure 3, the two processing zones share a common gas supply common pressure control, and a common process gas exhaust/pump The system, the modular design of the system allows it to be quickly transitioned from any configuration to any other configuration. The settings and groups of processing chambers can be changed to perform specific process steps. Any serial processing chambers 1〇6 can be included as follows Description 201008671 The inventive upper cover 'includes one or more ultraviolet lamps for use in a hardening process for low dielectric constant materials on a substrate and/or for a chamber cleaning process. In one embodiment 'all The three serial processing chambers 106 all have an ultraviolet lamp 'and are configured as an ultraviolet curing chamber to operate synchronously. There is a maximum production amount. In all the tandem processing chambers 1〇6 are arranged as ultraviolet curing chambers. In another embodiment, the system can be adapted to have one or more tandem processing chambers that have support chamber hardware known to be suitable for other known processes, such as chemical vapor deposition (CVD). ,physical Vapor deposition (pvd), surname, and the like. For example, 'the system can be configured such that one of the series of processing chambers acts as a CVD chamber to deposit material on the substrate, such as a low dielectric constant. (K) film. This configuration maximizes development and manufacturing use, and if desired, allows the initially deposited film to not be exposed to the atmosphere. A controller 140 includes a central processing unit (cpu) 144, a memory 142 And a support circuit 146 coupled to the various components of the semiconductor processing system 1 to facilitate control of the process of the present invention. The memory 142 can be any computer readable (four), such as random access memory (RAM), Read only memory (R〇M), floppy disk, hard disk, or any other form of digital memory, for the semiconductor processing system 1 or cpu, the near or far end of the support circuit i46 The cpu 144 is coupled 'to support the cpu in a conventional manner. The circuits include caches, power supplies, clock circuits, input/round circuits and subsystems, and the like. Software routines stored in the memory 142 or a series When the program command ' is executed by the CPU 144, the ultraviolet curing string 201008671 is connected to the processing chamber 106 to execute the process of the present invention.
第2圖示出該半導體處理系統100的_接處理室106 之一，其係經配置以進行紫外線硬化。該_接處理室106 包含-主體200及一上蓋202，其可以鉸鏈連結至該主 體200 〇與該上蓋202連結的是兩個外罩2〇4，其每一個 皆與入口 206以及出口 2〇8連結，以讓冷卻空氣通過該 等外罩204的内部^間。該冷卻空氣可以是室溫或大約 22度C。一中央加壓空氣源21〇提供流速足夠的空氣至 該等入口 206,以確保任何紫外線燈泡及/或與該串接 處理室106連結的燈泡之功率⑨214的正常運作、該等 出口 208從該等外罩2〇4接收排出的空氣其係由一共 同的排氣系統212收集’該排氣系統可包含—洗蘇器以 除去該等紫外線燈泡可能產生的臭氧，取決於燈泡㈣ 擇β臭氧處理問題可藉由以無氧冷卻氣體（例如氣氣、氬 氣或氦氣）冷卻該等燈來避免。 第3圖示出具有該上蓋2〇2、該等外罩2〇4及該等功 率源214的串接處理室1〇6之部分剖面圖。每一個外罩 204覆蓋兩個紫外線燈泡3()2各自的—個其係分別設 置在界疋在該主體200内的兩個處理區3〇〇上。每一個 處理區300包含-加熱底座3〇6，甩以在該等處理區侧 内支揮基材308。該等底座现可由㈣或金屬製成， 例如鋁。較佳地，該等底座306連接至支桿31〇，其延 伸通過該主體200的底部，並且係由驅動系统312作動， 以在該等處理區扇内將該底座3G6朝向或遠離該等紫 201008671 外線燈泡302移動。該等驅動系統3 12也可在硬化期間 旋轉及/或移動該等底座306,以進一步強化基材照明 的均勻性。該等底座306可調整的位置容許控制揮發性 硬化曰1丨產物以及淨化和清潔氣趙的流動圖案和滯留時 間，除了潛在的入射紫外線在基材3〇8上的照度水準微 調之外，取決於該光線輸送系統設計考量的本質，例如 焦距。 ^ 一般而言，可使用任何紫外線源，例如汞微波弧燈、 脈衝氙閃光燈或高效率紫外線發光二極髏陣列。該等紫 外線燈泡302是填充一或多種氣艎的密封電漿燈泡，例 如氣氣（Xe)或汞（Hg) ’用以被該等功率源214激發。較 佳地’該等功率源214係微波產生器，其可包含一或多 個磁控管（未示出）及一或多個變壓器（未示出），以提供該 等磁控管的絲極能量。在具備千瓦微波（MW)功率源的實 施例中，每一個外罩2〇4皆含有毗鄰該等功率源214的 修孔215，以從該等功率源214接收高至約6〇〇〇瓦的微波 功率’以在隨後從每一個燈泡302產生高至約1〇〇瓦的 紫外光。在另一實施例中，該等紫外線燈泡3〇2可在其 中包含電極或燈絲，而使該等功率源214代表至該電極 的電路及/或電流供應，例如直流電（DC)或脈衝DC。 就某些實施例而言，該等功率源214可包含射頻（RF) 能量源’其能夠激發該等紫外線燈泡3〇2内的氣體、燈 泡内的RF激發之配置可以是電容性的或感應的。可使用 感應耦合電漿（ICP)燈泡以藉由產生比電容耦合放電更 12 201008671 緻密的電漿來有效增加燈泡光輝》此外，ICP燈消除了 肇因於電極劣化之紫外線輸出衰減，導致燈泡壽命拉 長’而有強化的系統產率《該等功率源214是RF能量源 的益處包含效能的增加。Figure 2 shows one of the processing chambers 106 of the semiconductor processing system 100 configured to perform ultraviolet curing. The splicing processing chamber 106 includes a main body 200 and an upper cover 202 that can be hingedly coupled to the main body 200. The upper cover 202 is coupled to the two upper covers 202, each of which is connected to the inlet 206 and the outlet 2〇8. The connections are made to allow cooling air to pass through the interior of the outer casing 204. The cooling air can be room temperature or about 22 degrees C. A central pressurized air source 21 provides a sufficient flow of air to the inlets 206 to ensure proper operation of any ultraviolet bulbs and/or power bulbs 9214 coupled to the series of processing chambers 106, from which the outlets 208 are The outer casing 2〇4 receives the exhausted air and is collected by a common exhaust system 212. The exhaust system may include a scrubber to remove ozone that may be generated by the ultraviolet bulbs, depending on the bulb (4) Problems can be avoided by cooling the lamps with an oxygen-free cooling gas such as gas, argon or helium. Fig. 3 is a partial cross-sectional view showing the tandem processing chamber 1〇6 having the upper cover 2〇2, the outer covers 2〇4, and the power sources 214. Each of the outer covers 204 covers each of the two ultraviolet light bulbs 3 () 2 and is disposed on the two processing zones 3 in the main body 200, respectively. Each of the processing zones 300 includes a heating base 3〇6 to support the substrate 308 in the processing zone side. The bases can now be made of (4) or metal, such as aluminum. Preferably, the bases 306 are coupled to the struts 31A that extend through the bottom of the body 200 and are actuated by the drive system 312 to orient the base 3G6 toward or away from the purple in the processing zones. 201008671 The external light bulb 302 moves. The drive systems 3 12 can also rotate and/or move the bases 306 during hardening to further enhance the uniformity of substrate illumination. The adjustable position of the bases 306 allows control of the volatile hardening 以及1丨 product and the flow pattern and residence time of the cleansing and cleaning gas, in addition to the illuminance level fine adjustment of the potential incident ultraviolet light on the substrate 3〇8, depending on The nature of the design of the light delivery system, such as the focal length. ^ In general, any UV source can be used, such as a mercury microwave arc lamp, a pulsed xenon flash lamp or a high efficiency UV light emitting diode array. The ultraviolet light bulbs 302 are sealed plasma bulbs filled with one or more gas bubbles, such as gas (Xe) or mercury (Hg), for being excited by the power sources 214. Preferably, the power sources 214 are microwave generators that may include one or more magnetrons (not shown) and one or more transformers (not shown) to provide the wires of the magnetrons Extreme energy. In embodiments having a kilowatt microwave (MW) power source, each of the housings 2〇4 includes trim holes 215 adjacent the power sources 214 to receive up to about 6 watts from the power sources 214. The microwave power 'to subsequently generate up to about 1 watt of ultraviolet light from each of the bulbs 302. In another embodiment, the ultraviolet bulbs 3〇2 may include electrodes or filaments therein such that the power sources 214 represent circuits and/or current supplies to the electrodes, such as direct current (DC) or pulsed DC. For some embodiments, the power sources 214 can include a radio frequency (RF) energy source that is capable of exciting the gases within the ultraviolet bulbs 3〇2, and the RF excitation configuration within the bulbs can be capacitive or inductive. of. An inductively coupled plasma (ICP) bulb can be used to effectively increase the bulb brilliance by generating a denser plasma than the capacitive coupling discharge. 2010 。 ICP lamp eliminates the UV output attenuation due to electrode degradation, resulting in lamp life. Elongated 'with enhanced system yields. The benefits of these power sources 214 being RF energy sources include an increase in performance.
較佳地，該等燈泡302發射從170奈米至400奈米之 波長帶廣泛的光線。在本發明之一實施例中，該等燈泡 302發射波長從185奈米至255奈米的光線。選用在該 等燈泡3 02内的氣體可決定所發射的波長。從該等紫外 線燈泡302發射出的紫外光藉由通過設置在該上蓋2〇2 中的孔内之視窗314進入該等處理區300。該等視窗314 較佳地係由無氫氧根的合成石英玻璃製成，並且厚度足 以維持真空而不會破裂。此外，該等視窗3丨4較佳地係 溶融石英玻璃’其傳送低至約15〇奈米的紫外光。因為 該上蓋202封在該主體2〇〇上，而該等視窗314封在該 上蓋202上，該等處理區3〇〇提供能夠維持從約i托耳 至約650托耳的壓力之空間。處理或清潔氣體經由兩個 入口通道316各自的一値進入該等處理區3〇〇。該等處 理或清潔氣體然後通過一傭共同的出口埠3 ^ 8離開該等 處理區300。此外，供應至該等外罩204的内部空間之 冷卻空氣循環經過該等燈泡3〇2，但科用該等視窗314 與該等處理區300隔離。 該等外罩204可包含由塗覆二向色薄膜（dichroic film) 的鑄造石英内襯304定義的内部空間抛物線表面。該等 石英内襯304反射從該等紫外線燈泡3〇2發射出的紫外 13 201008671 光，並且經形塑以適於硬化製程以及腔室清潔製程，基 於由該等石英内襯304導入該等處理區3 00内的紫外光 之圖案。可調整該等石英内襯304以更加適合每一種製 程或作業，藉由移動和改變該内部空間拋物線表面的形 狀。此外，該等石英内襯304因為該二向色薄膜而可傳 輸紅外光並反射該等燈泡302發射的紫外光。該二向色 薄膜通常構成一週期性多層薄膜，由具備交錯的高及低 ©折射率之互異介電材料組成〃因為該塗層係非金屬，來 自該等功率源214往下入射在該等鑄造石英内襯3〇4背 側的微波輻射不會與該等調整層有顯著的反應，或被其 吸收’並且恨容易被傳輸而離子化該等燈泡302内的氣 體。 轉見第4圖，描述本發明之一實施例。清潔一基材處 理室的方法400包含多種步驟及組合，以有效清潔基材 處理室同時縮短腔室停機時間並維持基材產量。該方法 參 400包會在界定出一或多個處理區的處理室内處理一批 次基材，區塊404，區塊404包含多個子步驟，其可在 方法400的整個清潔製程中做為重覆子迴圈來執行，取 決於在該處理室内處理的基材數量。較佳地，該批次基 材包含10-15個基材，例如13個基材。 在該處理室内處理-批次基材，區塊404，可在具備 多個子步驟的子常式中執行，包含在該處理室内處理來 自該批欠之-基材，區塊4〇6，從該處理室移出該基材， 區塊4〇8 ’以及開始一不連續清潔製程，包含通入臭氧 201008671 至該處理室内，區塊410,以及將該處理室暴露在紫外 光下低於一分鐘’區塊412'該快速清潔，區塊412，可 每兩個或每三個基材即執行一次（重複區塊4〇6至4〇8 2χ 或3χ)，當微量紫外線梘窗塗層因固化該等基材而存在 時。可重馥先前步驟直到處理完該批次内的最後一個基 材為止，區塊414。例如若處理五個基材，可重複四次 區塊404 ’包含該等子迴圈區塊4〇6、408、410、及412， ❹ 直到處理完第五及最後一個基材為止。在一實施例中， 處理該等基材包含從先前沈積在該基材上的聚合物除去 成孔劑。 在處理該批次内的最後一個基材後，從該處理室移出 該最後一個基材，區塊416。開始一批次清潔製程，包 含通入臭氧至該處理室内，區塊418，以及將該處理室 暴露在紫外光下三至十五分鐘，區塊42〇^該紫外光可 包含介於185奈米和255奈米之間的波長。在區塊412 鲁中’該腔室可在處理每一個基材之間暴露在紫外光下15 至30秒。臭氧可在該處理區遠端產生，或者通入臭氧至 該腔室内可包含以紫外光激發氧氣以產生臭氧。 第 5.圖.示出本發明之另.一.實施例，α.....處理該基材.，.清潔 一基材處理室之方法400的區塊406，可更包含一組子 步驟500—處理該基材可包含加壓該腔室至5托耳，區 塊502,加熱該腔室至385〇C，區塊5〇4，以每分鐘1() 標準升將氦氣通入該腔室内，區塊506，以每分鐘1〇標 準升將氬氟通入該腔室内，區塊508 ’以及將該腔室暴 15 201008671 露在紫外光下165秒，區塊5 10。 第6圖示出本發明之另一實施例。處理每一個基材之 間進行的不連續清潔製程，包含區塊410和412，可更 包含一組子步驟600。該清潔製程可包含加壓該腔室至5 托耳’區塊602，加熱該腔室至385°C，區塊604，以每 分鐘10標準升將臭氧通入該腔室内，區塊606，將該腔 室暴露在紫外光下15秒，區塊608，以每分鐘10標準 升的氦氣淨化該腔室10秒，區塊610，然後泵吸該腔室 fp 10秒，區塊612。 第7圖示出本發明之又一實施例。在處理該批次基材 之後進行的該批次清潔製程，包含區塊416、418、和 420，可更包含一組子步驟7〇〇。該清潔製程可包含加壓 該腔室至5托耳，區塊702，加熱該腔室至385°C，區塊 704’以每分鐘1〇標準升將臭氧通入該腔室内，區塊 706 ’以及將該腔室暴露在紫外光下6分鐘，區塊7〇8。 © 如第1_3圖所示，本發明之另一貧施例包含一基材處 理室’其含有界定出一處理區3 〇〇的處理室1 〇6 ^包含 例如記憶體142之電腦可讀媒體的控制器14〇含有指 令，當執行時，其使該基材處理室在該紫外線硬化串接 處理室106内處理一批次基材。該製程包含在讓處理室 内處理來自該批次之一基材、從該處理室移出該基材、 通入臭氧至該處理室内、將該處理室暴露在紫外光下低 於一分鐘、以及重複先前的步驟直到處理完該批次内的 最後一個基材為止v該等指令更提供在處理該批次内的 201008671 最後一個基材之後’從該處理室移出該最後一個基材， 通入臭氧至該處理室内，以及將該處理室暴露在紫外光 下三至十五分鐘。 範例1 在應用材料公司，使用ProducerSE電漿輔助化學氣相 沈積室運用例如甲基二乙氧基矽烷（mDE〇s)的矽前驅物 以及例如α松油烯（ATRP)的成孔劑之混合物來沈積黑金 ❿ 剛II(BDIIx)介電膜（45奈米節點之k=2.5卜該薄膜係利 用如下參數沈積：每分鐘1〇〇〇毫克（mgm)的mDE〇s流 速、lOOOmgm的ATRP、以及每分鐘1〇〇〇標準立方公分 之做為載氣的氦氣。該薄膜係在3〇〇1 5托耳壓力以及 5〇〇瓦的RF功率下沈積。 該成孔劑稍後利用ProducerSE紫外線腔室除去，以產 生一多孔氧化物網絡。型態完整的成孔劑及成孔劑的破 Ο 裂碎片兩者皆從碳化矽BDIIx母體除去，並且是在高溫 下（高於3〇〇。〇暴露於紫外線中時。該硬化配方包含將該 腔室暴露在紫外光下165秒同時加壓該腔室至5托耳， 加熱該腔室至385°C ’並且將每分鐘1〇標準升的氦氣以 及每分鐘10標準升的氬氣通入該腔室内i 硬化後，利用在所處理的每一個基材之間執行的清潔 子常式（lx清潔）以及在13個基材後執行的深度清潔步驟 (I3x清潔)清潔該腔室，根據本發明實施例。該ΐχ请潔 包含在385。(：下的15秒紫外光暴露，同時加壓該腔室至 17 201008671 5托耳並以每分鐘ι〇標準升通入臭氧至該腔室。然後以 每分鐘10標準升的氦氣淨化該腔室1 〇秒’接著泵吸該 腔室10秒。該13χ清潔包含在385。〇下的6分鐘紫外線 暴露’同時加壓該腔室至5托耳並以每分鐘10標準升通 入臭氧至該腔室。然後以氦氣淨化該腔室20秒，並另外 再泵吸2 0秒。 在表1中，示出使用KLA-TENCOR F5橢圓儀所得的 _ 沈積後及紫外線硬化後薄膜厚度測量結果，當根據本發 明實施例清潔該處理室時。在典型的基材之紫外線腔室 硬化製程下’薄膜收縮，其係定義為薄膜厚度的縮減除 以初始厚度，會因基材而異’肇因於紫外線視窗微粒累 積及冷區微粒累積。收縮比例與紫外線暴露程度成線性 比例’而收縮均勻性，其係定義為收縮比例的單標準差 (〇ne-sigma)，主要對應於紫外線暴露的均勻性在其他 變量之中。所示之基於KLA Tencor F5橢圓儀的收縮比 # 例及收縮均勻性比例結果係就操作32個基材而言。 如表1所示’所有基材的收縮比例皆低於3%，並且所 有操作的收縮均勻性比例維持低於35%。某些程度變化 係來自也會影響薄膜收縮之薄膜化學氣相沈積上基材與 基材間的差異。使用本發明實施例，該紫外線視窗塗層 戎乎不存在，這可由該收縮均勻性的完全恢復輕易看出❶ 薄膜沈積後 UV硬化德 TTV il4r 準差 厚度(埃） 標準差 收縮比 均勻性 18 201008671Preferably, the bulbs 302 emit a wide range of light from a wavelength range from 170 nm to 400 nm. In one embodiment of the invention, the bulbs 302 emit light having a wavelength of from 185 nm to 255 nm. The gas emitted within the bulbs 302 can be used to determine the wavelength emitted. The ultraviolet light emitted from the ultraviolet light bulbs 302 enters the processing regions 300 by passing through a window 314 disposed in the holes in the upper cover 2〇2. The windows 314 are preferably made of synthetic quartz glass without hydroxide and are thick enough to maintain a vacuum without breaking. Moreover, the windows 3丨4 are preferably fumed quartz glass' which delivers ultraviolet light as low as about 15 nanometers. Because the upper cover 202 is sealed to the body 2 and the windows 314 are sealed to the upper cover 202, the processing zones 3 provide a space capable of maintaining a pressure of from about iTorr to about 650 Torr. The treatment or cleaning gas enters the processing zones 3 via a respective one of the two inlet channels 316. The treatment or cleaning gas then exits the treatment zone 300 through a common outlet 埠3^8. In addition, cooling air supplied to the interior space of the outer casing 204 circulates through the bulbs 3〇2, but is isolated from the processing zones 300 by the windows 314. The outer cover 204 can comprise an interior space parabolic surface defined by a cast quartz liner 304 coated with a dichroic film. The quartz linings 304 reflect the ultraviolet 13 201008671 light emitted from the ultraviolet light bulbs 3〇2 and are shaped to be suitable for the hardening process and the chamber cleaning process, based on the introduction of the quartz linings 304 into the processes. The pattern of ultraviolet light in the area 3 00. The quartz liners 304 can be adjusted to better suit each process or job by moving and changing the shape of the parabolic surface of the interior space. In addition, the quartz linings 304 can transmit infrared light and reflect the ultraviolet light emitted by the bulbs 302 due to the dichroic film. The dichroic film generally constitutes a periodic multilayer film composed of a dissimilar dielectric material having staggered high and low refractive indices, since the coating is non-metallic, from which the power source 214 is incident downward. The microwave radiation on the back side of the cast quartz liner 3〇4 does not significantly react with or be absorbed by the alignment layer and hates being easily transported to ionize the gases in the bulbs 302. Turning to Figure 4, an embodiment of the invention is described. The method 400 of cleaning a substrate processing chamber includes various steps and combinations to effectively clean the substrate processing chamber while reducing chamber downtime and maintaining substrate throughput. The method 400 package processes a batch of substrates in a processing chamber defining one or more processing zones, block 404, which includes a plurality of sub-steps that can be repeated throughout the cleaning process of method 400. The sub-loop is performed depending on the number of substrates processed in the processing chamber. Preferably, the batch substrate comprises from 10 to 15 substrates, for example 13 substrates. Processing the batch-batch substrate in the processing chamber, block 404, may be performed in a sub-routine having a plurality of sub-steps, including processing in the processing chamber from the batch-substrate, block 4〇6, from The processing chamber moves out of the substrate, the block 4〇8' and begins a discontinuous cleaning process, including the introduction of ozone 201008671 into the processing chamber, block 410, and exposing the processing chamber to less than one minute under ultraviolet light. 'Block 412' This quick cleaning, block 412, can be performed once every two or every three substrates (repeated blocks 4〇6 to 4〇8 2χ or 3χ), when a trace of UV 枧 window coating When these substrates are cured, they are present. Block 414 can be repeated until the last substrate in the batch is processed. For example, if five substrates are processed, the block 404' can be repeated four times to include the sub-loop blocks 4〇6, 408, 410, and 412, until the fifth and last substrates are processed. In one embodiment, treating the substrates comprises removing the porogen from the polymer previously deposited on the substrate. After processing the last substrate in the batch, the last substrate, block 416, is removed from the processing chamber. Beginning a batch of cleaning process, including introducing ozone into the processing chamber, block 418, and exposing the processing chamber to ultraviolet light for three to fifteen minutes, the block 42 〇 ^ the ultraviolet light may be included in 185 奈The wavelength between m and 255 nm. In block 412, the chamber can be exposed to ultraviolet light for 15 to 30 seconds between each substrate being processed. Ozone can be generated at the distal end of the treatment zone, or the passage of ozone into the chamber can include the excitation of oxygen by ultraviolet light to produce ozone. Figure 5. illustrates another embodiment of the present invention, a..... treating the substrate., a block 406 of the method 400 of cleaning a substrate processing chamber, which may further comprise a group of Step 500—Processing the substrate may include pressurizing the chamber to 5 Torr, block 502, heating the chamber to 385 〇C, block 5〇4, and passing the helium gas at 1 () liter per minute. Into the chamber, block 506, argon fluoride is introduced into the chamber at a standard liter per minute, block 508' and the chamber burst 15 201008671 is exposed to ultraviolet light for 165 seconds, block 5 10. Fig. 6 shows another embodiment of the present invention. A discrete cleaning process performed between each of the substrates, including blocks 410 and 412, may further comprise a set of sub-steps 600. The cleaning process can include pressurizing the chamber to a 5 Torr 'block 602, heating the chamber to 385 ° C, block 604, and introducing ozone into the chamber at 10 standard liters per minute, block 606, The chamber was exposed to ultraviolet light for 15 seconds, block 608, the chamber was purged with 10 standard liters of helium per minute for 10 seconds, block 610, and then the chamber fp was pumped for 10 seconds, block 612. Fig. 7 shows still another embodiment of the present invention. The batch cleaning process performed after processing the batch of substrates, including blocks 416, 418, and 420, may further comprise a set of sub-steps 7〇〇. The cleaning process can include pressurizing the chamber to 5 Torr, block 702, heating the chamber to 385 °C, and block 704' passing ozone into the chamber at 1 liter per minute, block 706 'And expose the chamber to ultraviolet light for 6 minutes, block 7〇8. © As shown in FIG. 1_3, another embodiment of the present invention comprises a substrate processing chamber 'containing a processing chamber 1 界定 6 defining a processing region 3 ^ a computer readable medium containing, for example, a memory 142 The controller 14 includes instructions that, when executed, cause the substrate processing chamber to process a batch of substrates in the ultraviolet hardening tandem processing chamber 106. The process includes processing a substrate from the batch, removing the substrate from the processing chamber, passing ozone into the processing chamber, exposing the processing chamber to ultraviolet light for less than one minute, and repeating The previous steps until the last substrate in the batch is processed. v. These instructions provide the last substrate after processing the 201008671 in the batch. 'The last substrate is removed from the processing chamber and ozone is introduced. To the processing chamber, and exposing the processing chamber to ultraviolet light for three to fifteen minutes. Example 1 At Applied Materials, a Producer SE plasma-assisted chemical vapor deposition chamber was used with a mixture of a ruthenium precursor such as methyldiethoxy decane (mDE〇s) and a pore former such as alpha terpinene (ATRP). To deposit black gold 刚 Gang II (BDIIx) dielectric film (k=2.5 at 45 nm node) The film was deposited using the following parameters: m〇〇〇〇s flow rate of 1〇〇〇mg (mgm) per minute, ATRP of 1000mgm, And 1 〇〇〇 standard cubic centimeters per minute as a carrier gas helium. The film is deposited at a pressure of 3〇〇15 torr and 5 watts of RF power. The porogen is later used by ProducerSE The UV chamber is removed to create a porous oxide network. Both the intact pore former and the pore former are removed from the carbide BDIIx matrix and at elevated temperatures (above 3〇). 〇. When exposed to ultraviolet light, the hardening formulation comprises exposing the chamber to ultraviolet light for 165 seconds while pressurizing the chamber to 5 Torr, heating the chamber to 385 ° C ' and will be 1 每 per minute Standard liter of helium and 10 standard liters of argon per minute pass into the After the chamber i is hardened, the chamber is cleaned by a cleaning routine (lx cleaning) performed between each of the substrates processed and a deep cleaning step (I3x cleaning) performed after 13 substrates, according to the present invention Example: The 洁 洁 Included in 385. (: 15 seconds of UV exposure, while pressurizing the chamber to 17 201008671 5 Torr and venting ozone into the chamber at a standard liter per minute. Then The chamber was purged with 10 standard liters of helium per minute for 1 sec. Then the chamber was pumped for 10 seconds. The 13 χ cleaning was included at 385. 6 minutes of UV exposure under the armpit' while pressurizing the chamber to 5 Torr The ear was introduced into the chamber at 10 standard liters per minute. The chamber was then purged with helium for 20 seconds and pumped for another 20 seconds. In Table 1, the KLA-TENCOR F5 ellipsometer was shown. The obtained film thickness measurement results after deposition and ultraviolet curing, when the processing chamber is cleaned according to an embodiment of the present invention, the film shrinkage is defined as the film thickness reduction in the ultraviolet curing process of a typical substrate. Divided by the initial thickness, will vary from substrate to substrate' Due to the accumulation of ultraviolet window particles and the accumulation of particles in the cold zone, the shrinkage ratio is linearly proportional to the degree of UV exposure, and the shrinkage uniformity is defined as the single standard deviation (〇ne-sigma) of the shrinkage ratio, which mainly corresponds to the ultraviolet exposure. Uniformity is among the other variables. The shrinkage ratio based on the KLA Tencor F5 ellipsometer shown and the shrinkage uniformity ratio result are for 32 substrates. As shown in Table 1, the shrinkage ratio of all substrates. Both are below 3% and the shrinkage uniformity ratio for all operations is maintained below 35%. Some degree of variation is due to the difference between the substrate and the substrate on thin film chemical vapor deposition which also affects film shrinkage. With the embodiment of the present invention, the ultraviolet window coating is devoid of existence, which can be easily seen by the complete recovery of the shrinkage uniformity. UV After the film deposition, the UV hardening TTV il4r standard deviation thickness (Angstrom) standard deviation shrinkage ratio uniformity 18 201008671
-丨本：月實施例可辅助除去完整及破裂碎片的成孔劑J 二’其塗覆該紫外線視窗並且累·該腔室較冷# 是殘餘理室的流量閥區域。該等較冷區域特別， 疋、 源，其可在處理期間污染基材：位於基相 上方的料線視f塗層尤其會使可得之有效势始 琴度降低。此外，因為該視窗的塗層不=有=㈣ 薄膜會在該處理室内不均勻硬化、 上的 19 201008671 為了恢復紫外線強度及均句性，可在每一個基材後或 半週期性地每兩個或三個基材後執行—快逮腔室清潔， 根據本發明實施例。可根據本發明實施例在批次基材之 間使用較久的純勒處理崎去綠物在歸冷點處 的累積，這輔助最小化設備停機時間同時維持基材產 量。因此’本發明提供-種快速的每_個或半週期基材 清潔，以改善紫外線視窗恢復n種深度的多基材 清潔’以改善殘餘物來源的移除，因而減少基材的微粒 污染。每個基材之間的快速清潔係經設計以低於基材傳 輸期間的腔室停機時間，而可造成零產量流失。 範例2- 丨: The monthly embodiment assists in the removal of intact and ruptured debris. The porogen J' is coated with the ultraviolet window and the chamber is cooler. # is the flow valve area of the residual chamber. These cooler regions are, in particular, helium, sources, which can contaminate the substrate during processing: the line above the base phase, depending on the f coating, in particular reduces the available effective potential. In addition, because the coating of the window is not = there is = (four) the film will be unevenly hardened in the processing chamber, on the 19 201008671 in order to restore the UV intensity and uniformity, after each substrate or semi-periodically every two One or three substrates are then performed - fast catch chamber cleaning, in accordance with an embodiment of the invention. The accumulation of the smectic green matter at the cold spot can be treated with a longer period of purely between batch substrates in accordance with embodiments of the present invention, which assists in minimizing equipment downtime while maintaining substrate throughput. Thus, the present invention provides a fast cleaning of the substrate per _ or half cycle to improve the UV window recovery of n depths of multi-substrate cleaning to improve the removal of residue sources, thereby reducing particulate contamination of the substrate. The rapid cleaning between each substrate is designed to be lower than the chamber downtime during substrate transfer, resulting in zero throughput loss. Example 2
如同範例1，利用ProducerSE紫外線腔室來除去成孔 劑，以產生一多孔氧化物網絡。在此範例中，該紫外線 硬化及清潔係在50托岑及增加的流速下執行，除此之外 的條件皆與範例1相同。該硬化配方包含將該腔室暴露 ❹ 在紫外光下165秒，同時加壓該腔室至50托耳，加熱該 腔室至3 85C’並以每分鐘30標準升的氦氣和每分鐘3〇 標準升的氬氣通入該腔室内。 硬化後，利用在所處理的每一個基材之間執行的清潔 子常式（lx清潔）以及在13個基材後執行的深度清潔步驟 (13x清潔）清潔該腔室，根據本發明實施例^該1χ清潔 包含在385°C下的15秒紫外光暴露，同時加壓該腔室至 50托耳並以每分鐘30標準升通入臭氧至該腔室。然後 以每分鐘10標準升的氦氣淨化該腔室10秒，接著栗吸 20 201008671 該腔至10#。該13X清潔包含在385〇c下的6分鐘紫外 線暴露，同時加壓談腔室至5〇托耳並以每分鐘3〇標準 升通入臭氧至該腔室。然後以氦氣淨化該腔室2〇秒並 另外再泵吸20秒。 範例3 如同範例1，利用ProducerSE紫外線腔室來除去成孔 劑以產生多孔氧化物網絡。在此範例中，沈積後薄 φ 膜厚度增至6K。為了補償每個基材較多的成孔劑移除， 每六個基材執行一次批次清潔。就6K的沈積後薄膜厚度 而言’該硬化配方包含將該腔室暴露在紫外光下4〇〇 秒’同時加壓該腔室至5托耳，加熱該腔室至385它， 並以每分鐘10標準升的氦氣和每分鐘1〇標準升的氬氣 通入該腔室内。 硬化後’利用在所處理的每一個基材i間執行的清潔 子常式（lx清潔）以及在6個基材後執行的深度清潔步驟 參 （6x清潔）清潔該腔室，根據本發明實施例。該lx清潔包 含在3851下的15秒紫外光暴露，同時加壓該腔室至5 托耳並以每分鐘10標準升通入臭氧至該腔室。然後以每 分鐘10標準升的氦氣淨化該腔室10秒，接著泵吸該腔 室1〇秒。該6x批次清潔包含在385°C下的6分鐘紫外 線暴露，同時加壓該腔室至5托耳並以每分鐘1〇標準升 通入臭氧至該腔室。然後以氦氣淨化該腔室20秒，並另 外再泵吸20秒。 範例4 21 201008671 如同範例1 ’利用ProducerSE紫外線腔室來除去成孔 劑，以產生一多孔氧化物網絡。在此範例中，沈積後薄 膜厚度減至1.2K »因為每個基材較少的成孔劑務除，每 26個基材才執行一次批次清潔。就12K的沈積後薄膜 厚度而言，該硬化配方包含將該腔室暴露在紫外光下1〇〇 秒’同時加壓該腔室至5托耳’加熱該腔室至385， 並以每分鐘10標準升的氦氣和每分鐘1〇標準升的氬氣 通入該腔室内。 ❹ 硬化後’利用在所處理的每一個基材之間執行的清潔 子常式（lx清潔）以及在26個基材後執行的深度清潔步驟 (26x清潔）清潔該腔室，根據本發明實施例。該1χ清潔 包含在3 85 C下的15秒紫外光暴露，同時加壓該腔室至 5托耳並以每分鐘1〇標準升通入臭氧至該腔室。然後以 每分鐘10標準升的氦氣淨化該腔室秒，接著泵吸該 腔至10秒。該26χ批次清潔包含在385。〇下的6分鐘紫 # 外線暴露，同時加壓該腔室至5托耳並以每分鐘10標準 升通入臭氧至該腔室。然後以氦氣淨化該腔室2〇秒，並 另外再泵吸20秒。 範例5 . 昏 . . ..... .. 如同範例1，利用pr〇ducerSE紫外線腔室來除去成孔 劑，以產生一多孔氧化物網絡。在此範例中，沈積後薄 膜厚度減至1.2K。因為每個基材較少的成孔劑移除，該 快速的每一個基材清潔由每兩個基材清潔取代。該批次 清潔循環保捧13x 〇就1.2K的沈積後薄膜厚度而言，該 22 201008671 硬化配方包含將該腔室暴露在紫外光下.100秒，同.時加 壓該腔室至5托耳，加熱該腔室至385°C，並以每分鐘 10標準升的氦氣和每分鐘1〇標準升的氬氣通入該腔室 内。 每硬化兩個基材之後清潔該腔室，並且在13個基材後 執行一次深度清潔步驟（13χ清潔），根據本發明實施例。 該每兩個基材清潔包含在3 85°C下的15秒紫外光暴露， 同時加壓該腔室至5托耳並以每分鐘1〇標準升通入臭氧 籲 至該腔室。然後以每分鐘10標準升的氦氣淨化該腔室 1〇秒，接著泵吸該腔室1〇秒。該13x批次清潔包含在 385°C下的6分鐘紫外線暴露，同時加壓該腔室至5托耳 並以每分鐘10標準升通入臭氧至該腔室。然後以氦氣淨 化該腔室20秒’並另外再泵吸2〇秒。 可合併或調整在此所述的任何實施例，以囊括其他實 施例的態樣。雖然前述係針對本發明實施例，但本發明 ❹ 之其他及更進一步實施例可在不背離其基本範圍下設計 出’而其範圍係由如下申請專利範圍決定、 【圖式簡單說明】 因此可以詳細暸解上述本發明之特徵结構的方式，即 對本發明更明確的描述，簡短地在前面概述過，可藉由 參考實施例來得到’其中某些在附圖中示出。但是應注 意的疋’附圖僅示出本發明之一般實施例，因此不應視 23 201008671 為係對其範圍之限备丨 例。 為本發明可允許其他等效實施 第1圖係本發明實施例可在其t實施之—體 系統的平面圖。卞等趙處理 第2圖係該半導體處理系統之一串接處理室的 其係經配置以進行紫外線硬化。 第3圖係該串接處理室的部分剖面圖，其擁 件第連設置在兩個處理區上方的兩個紫外線燈泡。 第圖係本發明之一實施例之製程流程。 第5囷係本發明之另一實施例之製程流程。 第6圖係本發明之另一實施例之製程流程。 第7圖係本發明之另一實施例之製程流程。 為了促進了解，在可能時使用相同的元件符號來表示 該等圖式共有的相同元件。預期到在一實施例中揭示: 元件可有利地用於其他實施例而不需特別詳述。 ❿ 【主要元件符號說明】 100 半導體處理系統 101 主框架結構 102 前端活動區 103 氣體分配盤 105 功率分佈盤 106 串接處理室 24 201008671 109 基材匣 111 負載鎖定室 112 負載鎖定室 113 基材處理器 138 後端 140 控制器 142 記憶體 144 中央處理單元As in Example 1, the Producer SE UV chamber was used to remove the porogen to create a porous oxide network. In this example, the UV hardening and cleaning system was performed at 50 Torr and an increased flow rate, and the other conditions were the same as in Example 1. The hardening formulation comprises exposing the chamber to ultraviolet light for 165 seconds while pressurizing the chamber to 50 Torr, heating the chamber to 3 85 C' and at 30 standard liters of helium per minute and 3 per minute A standard liter of argon gas is introduced into the chamber. After hardening, the chamber is cleaned using a cleaning routine (lx cleaning) performed between each of the substrates being processed and a deep cleaning step (13x cleaning) performed after 13 substrates, in accordance with an embodiment of the present invention ^ The 1 χ cleaning contained 15 seconds of UV exposure at 385 ° C while pressurizing the chamber to 50 Torr and introducing ozone to the chamber at 30 standard liters per minute. The chamber was then purged with 10 standard liters of helium per minute for 10 seconds, followed by a pumping 20 201008671 to 10#. The 13X cleaning contained a 6 minute UV exposure at 385 〇c while pressurizing the chamber to 5 Torr and introducing ozone into the chamber at 3 liters per minute. The chamber was then purged with helium for 2 seconds and pumped for another 20 seconds. Example 3 As in Example 1, the Producer SE UV chamber was used to remove the porogen to create a porous oxide network. In this example, the thickness of the thin φ film after deposition is increased to 6K. To compensate for more porogen removal per substrate, batch cleaning is performed every six substrates. In terms of 6K post-deposition film thickness 'this hardening formulation comprises exposing the chamber to ultraviolet light for 4 sec seconds' while pressurizing the chamber to 5 Torr, heating the chamber to 385 it, and for each Minutes of 10 liters of helium and 1 liter of standard liter of argon per minute were introduced into the chamber. After hardening, the chamber is cleaned by a cleaning routine (lx cleaning) performed between each substrate i processed and a deep cleaning step (6x cleaning) performed after 6 substrates, according to the present invention. example. The lx cleaner contained 15 seconds of UV exposure at 3851 while pressurizing the chamber to 5 Torr and introducing ozone to the chamber at 10 standard liters per minute. The chamber was then purged with 10 standard liters of helium per minute for 10 seconds and then pumped into the chamber for 1 second. The 6x batch cleaning contained 6 minutes of UV exposure at 385 °C while pressurizing the chamber to 5 Torr and introducing ozone to the chamber at 1 liter per minute. The chamber was then purged with helium for 20 seconds and pumped for another 20 seconds. Example 4 21 201008671 As in Example 1 'The Producer SE UV chamber was used to remove the porogen to create a porous oxide network. In this example, the film thickness after deposition is reduced to 1.2K » Because less porogen is removed per substrate, batch cleaning is performed every 26 substrates. For a 12K post-deposition film thickness, the hardening formulation comprises exposing the chamber to ultraviolet light for 1 second while simultaneously pressurizing the chamber to 5 Torr to heat the chamber to 385 and at each minute 10 standard liters of helium and 1 liter of standard liter of argon per minute were introduced into the chamber. ❹ After hardening 'cleaning the chamber with a cleaning subroutine (lx cleaning) performed between each substrate being processed and a deep cleaning step (26x cleaning) performed after 26 substrates, implemented in accordance with the present invention example. The 1 χ cleaning contained 15 seconds of UV exposure at 3 85 C while simultaneously pressurizing the chamber to 5 Torr and introducing ozone into the chamber at 1 liter per minute. The chamber was then purged with 10 standard liters of helium per minute and the chamber was pumped for 10 seconds. The 26 χ batch cleaning is included at 385. The 6-minute Violet # outside of the arm is exposed, while the chamber is pressurized to 5 Torr and ozone is introduced into the chamber at 10 standard liters per minute. The chamber was then purged with helium for 2 seconds and pumped for another 20 seconds. Example 5. Faint. . . . . . . . As in Example 1, the porogen was removed using a pr〇ducer SE UV chamber to create a porous oxide network. In this example, the film thickness after deposition is reduced to 1.2K. Because of the reduced porogen removal per substrate, this rapid cleaning of each substrate is replaced by cleaning of every two substrates. The batch cleaning cycle holds 13x 〇. For the 1.2K deposited film thickness, the 22 201008671 hardening formulation includes exposing the chamber to ultraviolet light for 100 seconds, while pressurizing the chamber to 5 Torr. The ear was heated to 385 ° C and passed into the chamber at 10 standard liters of helium per minute and 1 liter of standard liter of argon per minute. The chamber was cleaned after each of the two substrates was hardened, and a deep cleaning step (13 χ cleaning) was performed after 13 substrates, in accordance with an embodiment of the present invention. Each of the two substrate cleanings contained a 15 second UV exposure at 3 85 ° C while simultaneously pressurizing the chamber to 5 Torr and introducing ozone into the chamber at 1 Torr per minute. The chamber was then purged with 10 standard liters of helium per minute for 1 second and then the chamber was pumped for 1 second. The 13x batch cleaning contained 6 minutes of UV exposure at 385 °C while pressurizing the chamber to 5 Torr and introducing ozone to the chamber at 10 standard liters per minute. The chamber was then purged with helium for 20 seconds' and pumped for an additional 2 seconds. Any of the embodiments described herein can be combined or adjusted to encompass aspects of other embodiments. While the foregoing is directed to embodiments of the present invention, other and further embodiments of the present invention may be devised without departing from the scope of the invention, and the scope thereof is determined by the scope of the following claims. The manner in which the above-described features of the present invention are described in detail, that is, the more detailed description of the present invention, which has been briefly described above, can be obtained by referring to the embodiments, some of which are shown in the drawings. However, the drawings are merely illustrative of the general embodiments of the present invention and should not be considered as an example of the scope of the invention. Other equivalent implementations are permitted for the present invention. Figure 1 is a plan view of a system in which embodiments of the present invention may be implemented.赵等赵处理 Figure 2 is a series of processing systems of the semiconductor processing system that are configured to perform ultraviolet curing. Figure 3 is a partial cross-sectional view of the tandem processing chamber with the two ultraviolet bulbs disposed above the two processing zones. The figure is a process flow of an embodiment of the present invention. The fifth embodiment is a process flow of another embodiment of the present invention. Figure 6 is a process flow diagram of another embodiment of the present invention. Figure 7 is a process flow diagram of another embodiment of the present invention. To promote understanding, the same element symbols are used where possible to indicate the same elements that are common to the drawings. It is contemplated that in an embodiment: an element may be advantageously utilized in other embodiments without particular detail. ❿ [Main component symbol description] 100 Semiconductor processing system 101 Main frame structure 102 Front active area 103 Gas distribution plate 105 Power distribution plate 106 Serial processing chamber 24 201008671 109 Substrate 匣 111 Load lock chamber 112 Load lock chamber 113 Substrate processing 138 back end 140 controller 142 memory 144 central processing unit
146 支持電路 200 主體 202 上蓋 204 外罩 206 入口 208 出口 210 加壓空氣源 212 排氣系統 2 14 功率源 215 孔 300 處理區 302 紫外線燈泡 304 石英内襯 306 加熱底座 308 基材 310 支桿 201008671 312 驅動系統 314 視窗 3 1 6 入口通道 318 出口埠 400 方法146 Support Circuit 200 Body 202 Upper Cover 204 Cover 206 Entry 208 Outlet 210 Pressurized Air Source 212 Exhaust System 2 14 Power Source 215 Hole 300 Processing Area 302 UV Bulb 304 Quartz Lining 306 Heating Base 308 Substrate 310 Strut 201008671 312 Drive System 314 Window 3 1 6 Inlet Channel 318 Exit 埠 400 Method
404、406、408、410、412、414、416、418、420、5 02、 504、506、508、510、602、604 ' 606、608、610、612 ' 702、704、706、708 區塊 500、600 ' 700 子步驟404, 406, 408, 410, 412, 414, 416, 418, 420, 5 02, 504, 506, 508, 510, 602, 604 ' 606, 608, 610, 612 ' 702, 704, 706, 708 block 500, 600 '700 substeps
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