TWI465298B - 用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加 - Google Patents
用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加 Download PDFInfo
- Publication number
- TWI465298B TWI465298B TW098121035A TW98121035A TWI465298B TW I465298 B TWI465298 B TW I465298B TW 098121035 A TW098121035 A TW 098121035A TW 98121035 A TW98121035 A TW 98121035A TW I465298 B TWI465298 B TW I465298B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing chamber
- substrate
- chamber
- processing
- cleaning
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 154
- 230000000737 periodic effect Effects 0.000 title description 3
- 238000012545 processing Methods 0.000 claims description 178
- 238000000034 method Methods 0.000 claims description 74
- 238000004140 cleaning Methods 0.000 claims description 72
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 43
- 239000001307 helium Substances 0.000 claims description 23
- 229910052734 helium Inorganic materials 0.000 claims description 23
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 23
- 239000003361 porogen Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims 3
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 description 41
- 239000010408 film Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 238000003848 UV Light-Curing Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Natural products CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- GCGOSWDCNJRBCH-UHFFFAOYSA-N 2,2-diethoxyundecane Chemical compound CCCCCCCCCC(C)(OCC)OCC GCGOSWDCNJRBCH-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7653708P | 2008-06-27 | 2008-06-27 | |
| US12/178,523 US20100018548A1 (en) | 2008-07-23 | 2008-07-23 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201008671A TW201008671A (en) | 2010-03-01 |
| TWI465298B true TWI465298B (zh) | 2014-12-21 |
Family
ID=41444874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098121035A TWI465298B (zh) | 2008-06-27 | 2009-06-23 | 用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5572623B2 (enExample) |
| KR (1) | KR101631586B1 (enExample) |
| CN (1) | CN102077316A (enExample) |
| TW (1) | TWI465298B (enExample) |
| WO (1) | WO2009158169A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103109357B (zh) * | 2010-10-19 | 2016-08-24 | 应用材料公司 | 用于紫外线纳米固化腔室的石英喷洒器 |
| TWI476144B (zh) * | 2012-05-14 | 2015-03-11 | Univ Nat Taiwan | 週期性奈米孔洞狀結構陣列之製造方法及其用途 |
| CN104916522B (zh) * | 2014-03-10 | 2017-12-22 | 中芯国际集成电路制造(上海)有限公司 | 去除hasti制备过程中形成的残留颗粒的方法 |
| JP7304768B2 (ja) * | 2019-08-16 | 2023-07-07 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置および熱処理装置の洗浄方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6254689B1 (en) * | 1999-03-09 | 2001-07-03 | Lucent Technologies Inc. | System and method for flash photolysis cleaning of a semiconductor processing chamber |
| TW535222B (en) * | 2002-06-11 | 2003-06-01 | Toppoly Optoelectronics Corp | Method for depositing thin film using plasma chemical vapor deposition |
| US20030183244A1 (en) * | 2002-04-02 | 2003-10-02 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| TW200410337A (en) * | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
| TWI248126B (en) * | 2004-01-23 | 2006-01-21 | Air Prod & Chem | Cleaning CVD chambers following deposition of porogen-containing materials |
| TW200625388A (en) * | 2004-06-18 | 2006-07-16 | Axcelis Tech Inc | Apparatus and process for treating dielectric materials |
| US7265061B1 (en) * | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
| TW200741028A (en) * | 2006-03-17 | 2007-11-01 | Applied Materials Inc | UV cure system |
| CN101171367A (zh) * | 2005-05-09 | 2008-04-30 | 应用材料公司 | 处理室的高效uv清洁 |
| TW200832534A (en) * | 2006-09-19 | 2008-08-01 | Asm Japan | Method of cleaning UV irradiation chamber |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911233B2 (en) * | 2002-08-08 | 2005-06-28 | Toppoly Optoelectronics Corp. | Method for depositing thin film using plasma chemical vapor deposition |
| US7709814B2 (en) * | 2004-06-18 | 2010-05-04 | Axcelis Technologies, Inc. | Apparatus and process for treating dielectric materials |
| US20060249175A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
| US20070134435A1 (en) * | 2005-12-13 | 2007-06-14 | Ahn Sang H | Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films |
-
2009
- 2009-06-04 KR KR1020117002159A patent/KR101631586B1/ko active Active
- 2009-06-04 JP JP2011516399A patent/JP5572623B2/ja not_active Expired - Fee Related
- 2009-06-04 CN CN200980125854XA patent/CN102077316A/zh active Pending
- 2009-06-04 WO PCT/US2009/046270 patent/WO2009158169A1/en not_active Ceased
- 2009-06-23 TW TW098121035A patent/TWI465298B/zh active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6254689B1 (en) * | 1999-03-09 | 2001-07-03 | Lucent Technologies Inc. | System and method for flash photolysis cleaning of a semiconductor processing chamber |
| US20030183244A1 (en) * | 2002-04-02 | 2003-10-02 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| TW535222B (en) * | 2002-06-11 | 2003-06-01 | Toppoly Optoelectronics Corp | Method for depositing thin film using plasma chemical vapor deposition |
| TW200410337A (en) * | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
| US7265061B1 (en) * | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
| TWI248126B (en) * | 2004-01-23 | 2006-01-21 | Air Prod & Chem | Cleaning CVD chambers following deposition of porogen-containing materials |
| TW200625388A (en) * | 2004-06-18 | 2006-07-16 | Axcelis Tech Inc | Apparatus and process for treating dielectric materials |
| CN101171367A (zh) * | 2005-05-09 | 2008-04-30 | 应用材料公司 | 处理室的高效uv清洁 |
| TW200741028A (en) * | 2006-03-17 | 2007-11-01 | Applied Materials Inc | UV cure system |
| TW200832534A (en) * | 2006-09-19 | 2008-08-01 | Asm Japan | Method of cleaning UV irradiation chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110025227A (ko) | 2011-03-09 |
| CN102077316A (zh) | 2011-05-25 |
| KR101631586B1 (ko) | 2016-06-17 |
| JP2011526077A (ja) | 2011-09-29 |
| WO2009158169A1 (en) | 2009-12-30 |
| TW201008671A (en) | 2010-03-01 |
| JP5572623B2 (ja) | 2014-08-13 |
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