JP2011519483A5 - - Google Patents
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- Publication number
- JP2011519483A5 JP2011519483A5 JP2011507351A JP2011507351A JP2011519483A5 JP 2011519483 A5 JP2011519483 A5 JP 2011519483A5 JP 2011507351 A JP2011507351 A JP 2011507351A JP 2011507351 A JP2011507351 A JP 2011507351A JP 2011519483 A5 JP2011519483 A5 JP 2011519483A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- memory device
- region
- gate electrode
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 472
- 238000003860 storage Methods 0.000 claims description 76
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000005468 ion implantation Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 8
- 230000004048 modification Effects 0.000 description 39
- 238000012986 modification Methods 0.000 description 39
- 239000003990 capacitor Substances 0.000 description 21
- 230000014759 maintenance of location Effects 0.000 description 19
- 230000008859 change Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0040888 | 2008-04-30 | ||
| KR1020080040888A KR101505494B1 (ko) | 2008-04-30 | 2008-04-30 | 무 커패시터 메모리 소자 |
| PCT/KR2009/002284 WO2009134089A2 (ko) | 2008-04-30 | 2009-04-30 | 무 커패시터 메모리 소자 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011519483A JP2011519483A (ja) | 2011-07-07 |
| JP2011519483A5 true JP2011519483A5 (https=) | 2011-11-04 |
| JP5496184B2 JP5496184B2 (ja) | 2014-05-21 |
Family
ID=41255563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011507351A Active JP5496184B2 (ja) | 2008-04-30 | 2009-04-30 | キャパシタレスメモリ素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8860109B2 (https=) |
| EP (1) | EP2284879B1 (https=) |
| JP (1) | JP5496184B2 (https=) |
| KR (1) | KR101505494B1 (https=) |
| TW (1) | TWI419327B (https=) |
| WO (1) | WO2009134089A2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8330170B2 (en) | 2008-12-05 | 2012-12-11 | Micron Technology, Inc. | Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods |
| US9105707B2 (en) | 2013-07-24 | 2015-08-11 | International Business Machines Corporation | ZRAM heterochannel memory |
| KR20160074826A (ko) | 2014-12-18 | 2016-06-29 | 삼성전자주식회사 | 반도체 장치 |
| US10403628B2 (en) | 2014-12-23 | 2019-09-03 | International Business Machines Corporation | Finfet based ZRAM with convex channel region |
| US9978772B1 (en) * | 2017-03-14 | 2018-05-22 | Micron Technology, Inc. | Memory cells and integrated structures |
| US11056571B2 (en) * | 2019-06-18 | 2021-07-06 | Micron Technology, Inc. | Memory cells and integrated structures |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840855A (ja) * | 1981-09-04 | 1983-03-09 | Hitachi Ltd | 半導体記憶素子 |
| JPH06177375A (ja) * | 1992-12-10 | 1994-06-24 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP3361922B2 (ja) * | 1994-09-13 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
| JP3407232B2 (ja) * | 1995-02-08 | 2003-05-19 | 富士通株式会社 | 半導体記憶装置及びその動作方法 |
| JPH1092952A (ja) * | 1996-09-18 | 1998-04-10 | Toshiba Corp | 半導体記憶装置 |
| US5963817A (en) * | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
| KR100257765B1 (ko) * | 1997-12-30 | 2000-06-01 | 김영환 | 기억소자 및 그 제조 방법 |
| JP4713783B2 (ja) * | 2000-08-17 | 2011-06-29 | 株式会社東芝 | 半導体メモリ装置 |
| JP3884266B2 (ja) * | 2001-02-19 | 2007-02-21 | 株式会社東芝 | 半導体メモリ装置及びその製造方法 |
| JP2003031693A (ja) * | 2001-07-19 | 2003-01-31 | Toshiba Corp | 半導体メモリ装置 |
| KR20030034470A (ko) * | 2001-10-23 | 2003-05-09 | 주식회사 하이닉스반도체 | 실리콘-게르마늄 채널을 포함하는 트랜지스터의 제조방법 |
| JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
| JP4880867B2 (ja) * | 2002-04-10 | 2012-02-22 | セイコーインスツル株式会社 | 薄膜メモリ、アレイとその動作方法および製造方法 |
| US7042052B2 (en) * | 2003-02-10 | 2006-05-09 | Micron Technology, Inc. | Transistor constructions and electronic devices |
| US7045401B2 (en) * | 2003-06-23 | 2006-05-16 | Sharp Laboratories Of America, Inc. | Strained silicon finFET device |
| US6921982B2 (en) * | 2003-07-21 | 2005-07-26 | International Business Machines Corporation | FET channel having a strained lattice structure along multiple surfaces |
| US20050062088A1 (en) * | 2003-09-22 | 2005-03-24 | Texas Instruments Incorporated | Multi-gate one-transistor dynamic random access memory |
| US7057216B2 (en) * | 2003-10-31 | 2006-06-06 | International Business Machines Corporation | High mobility heterojunction complementary field effect transistors and methods thereof |
| US7244958B2 (en) * | 2004-06-24 | 2007-07-17 | International Business Machines Corporation | Integration of strained Ge into advanced CMOS technology |
| US7193279B2 (en) * | 2005-01-18 | 2007-03-20 | Intel Corporation | Non-planar MOS structure with a strained channel region |
| JP4239203B2 (ja) * | 2005-05-31 | 2009-03-18 | 株式会社東芝 | 半導体装置とその製造方法 |
| US7517741B2 (en) * | 2005-06-30 | 2009-04-14 | Freescale Semiconductor, Inc. | Single transistor memory cell with reduced recombination rates |
| US8410539B2 (en) * | 2006-02-14 | 2013-04-02 | Stmicroelectronics (Crolles 2) Sas | MOS transistor with a settable threshold |
| JP2008213624A (ja) | 2007-03-02 | 2008-09-18 | Toyota Motor Corp | 操作機構および操作機構を備えた車両 |
| US7928426B2 (en) * | 2007-03-27 | 2011-04-19 | Intel Corporation | Forming a non-planar transistor having a quantum well channel |
| US7948008B2 (en) * | 2007-10-26 | 2011-05-24 | Micron Technology, Inc. | Floating body field-effect transistors, and methods of forming floating body field-effect transistors |
| JP5403212B2 (ja) | 2008-10-06 | 2014-01-29 | 株式会社Ｉｈｉ | 白色ｌｅｄの製造装置と方法 |
-
2008
- 2008-04-30 KR KR1020080040888A patent/KR101505494B1/ko active Active
-
2009
- 2009-04-30 TW TW098114394A patent/TWI419327B/zh active
- 2009-04-30 JP JP2011507351A patent/JP5496184B2/ja active Active
- 2009-04-30 EP EP09738995.1A patent/EP2284879B1/en active Active
- 2009-04-30 WO PCT/KR2009/002284 patent/WO2009134089A2/ko not_active Ceased
- 2009-04-30 US US12/990,353 patent/US8860109B2/en active Active
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