JP2011517509A5 - - Google Patents

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Publication number
JP2011517509A5
JP2011517509A5 JP2011501801A JP2011501801A JP2011517509A5 JP 2011517509 A5 JP2011517509 A5 JP 2011517509A5 JP 2011501801 A JP2011501801 A JP 2011501801A JP 2011501801 A JP2011501801 A JP 2011501801A JP 2011517509 A5 JP2011517509 A5 JP 2011517509A5
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JP
Japan
Prior art keywords
layer
image sensor
substrate
substrate layer
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011501801A
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English (en)
Japanese (ja)
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JP2011517509A (ja
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Publication date
Priority claimed from US12/054,505 external-priority patent/US20090243025A1/en
Application filed filed Critical
Publication of JP2011517509A publication Critical patent/JP2011517509A/ja
Publication of JP2011517509A5 publication Critical patent/JP2011517509A5/ja
Pending legal-status Critical Current

Links

JP2011501801A 2008-03-25 2009-03-24 増大された空乏層深さを有する光検出器 Pending JP2011517509A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/054,505 US20090243025A1 (en) 2008-03-25 2008-03-25 Pixel structure with a photodetector having an extended depletion depth
US12/054,505 2008-03-25
PCT/US2009/001835 WO2009120317A1 (en) 2008-03-25 2009-03-24 A photodetector having an extended depletion depth

Publications (2)

Publication Number Publication Date
JP2011517509A JP2011517509A (ja) 2011-06-09
JP2011517509A5 true JP2011517509A5 (enExample) 2012-03-01

Family

ID=40786478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011501801A Pending JP2011517509A (ja) 2008-03-25 2009-03-24 増大された空乏層深さを有する光検出器

Country Status (7)

Country Link
US (1) US20090243025A1 (enExample)
EP (1) EP2269222A1 (enExample)
JP (1) JP2011517509A (enExample)
KR (1) KR20100133445A (enExample)
CN (1) CN101978500A (enExample)
TW (1) TW201001688A (enExample)
WO (1) WO2009120317A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5282543B2 (ja) * 2008-11-28 2013-09-04 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
JP5648922B2 (ja) * 2009-10-05 2015-01-07 国立大学法人静岡大学 半導体素子及び固体撮像装置
JP5682150B2 (ja) * 2010-06-14 2015-03-11 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
CN102222678A (zh) * 2011-06-22 2011-10-19 格科微电子（上海）有限公司 Cmos图像传感器及其形成方法
JP6159184B2 (ja) * 2013-07-25 2017-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP6161454B2 (ja) * 2013-07-25 2017-07-12 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
TWI837648B (zh) * 2017-07-31 2024-04-01 日商松下知識產權經營股份有限公司 拍攝裝置
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
WO2020173681A1 (en) * 2019-02-26 2020-09-03 Asml Netherlands B.V. Charged particle detector with gain element
CN114068739A (zh) * 2021-07-29 2022-02-18 神盾股份有限公司 光感测装置
KR102712619B1 (ko) * 2022-01-20 2024-10-02 주식회사 시지트로닉스 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법
CN115513242B (zh) * 2022-11-01 2025-10-03 北京集创北方科技股份有限公司 半导体器件结构形成方法、感光组件、传感器、电子设备

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JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
US5238864A (en) * 1990-12-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of making solid-state imaging device
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
EP0883187A1 (en) * 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
JP2001284568A (ja) * 2000-03-31 2001-10-12 Sharp Corp 固体撮像装置
JP2002223393A (ja) * 2000-11-27 2002-08-09 Sanyo Electric Co Ltd 電荷転送素子
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
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US7875916B2 (en) * 2005-09-28 2011-01-25 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
US7728277B2 (en) * 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
JP4923596B2 (ja) * 2006-01-31 2012-04-25 ソニー株式会社 固体撮像装置
JP4859045B2 (ja) * 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器

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