CN101978500A - 具有经扩展耗尽深度的光电检测器 - Google Patents

具有经扩展耗尽深度的光电检测器 Download PDF

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Publication number
CN101978500A
CN101978500A CN2009801098945A CN200980109894A CN101978500A CN 101978500 A CN101978500 A CN 101978500A CN 2009801098945 A CN2009801098945 A CN 2009801098945A CN 200980109894 A CN200980109894 A CN 200980109894A CN 101978500 A CN101978500 A CN 101978500A
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China
Prior art keywords
layer
substrate layer
region
pixel
buried layer
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Pending
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CN2009801098945A
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English (en)
Chinese (zh)
Inventor
埃里克·戈登·史蒂文斯
H·Q·多恩
伍舒国
张忠威
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Omnivision Technologies Inc
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Eastman Kodak Co
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Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN101978500A publication Critical patent/CN101978500A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
CN2009801098945A 2008-03-25 2009-03-24 具有经扩展耗尽深度的光电检测器 Pending CN101978500A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/054,505 US20090243025A1 (en) 2008-03-25 2008-03-25 Pixel structure with a photodetector having an extended depletion depth
US12/054,505 2008-03-25
PCT/US2009/001835 WO2009120317A1 (en) 2008-03-25 2009-03-24 A photodetector having an extended depletion depth

Publications (1)

Publication Number Publication Date
CN101978500A true CN101978500A (zh) 2011-02-16

Family

ID=40786478

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801098945A Pending CN101978500A (zh) 2008-03-25 2009-03-24 具有经扩展耗尽深度的光电检测器

Country Status (7)

Country Link
US (1) US20090243025A1 (enExample)
EP (1) EP2269222A1 (enExample)
JP (1) JP2011517509A (enExample)
KR (1) KR20100133445A (enExample)
CN (1) CN101978500A (enExample)
TW (1) TW201001688A (enExample)
WO (1) WO2009120317A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN109326618A (zh) * 2017-07-31 2019-02-12 松下知识产权经营株式会社 摄像装置
CN113490993A (zh) * 2019-02-26 2021-10-08 Asml荷兰有限公司 具有增益元件的带电粒子检测器

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JP5282543B2 (ja) * 2008-11-28 2013-09-04 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
JP5648922B2 (ja) * 2009-10-05 2015-01-07 国立大学法人静岡大学 半導体素子及び固体撮像装置
JP5682150B2 (ja) * 2010-06-14 2015-03-11 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
CN102222678A (zh) * 2011-06-22 2011-10-19 格科微电子（上海）有限公司 Cmos图像传感器及其形成方法
JP6159184B2 (ja) * 2013-07-25 2017-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP6161454B2 (ja) * 2013-07-25 2017-07-12 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
TWI821781B (zh) * 2021-07-29 2023-11-11 神盾股份有限公司 光感測裝置
KR102712619B1 (ko) * 2022-01-20 2024-10-02 주식회사 시지트로닉스 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법
CN115513242B (zh) * 2022-11-01 2025-10-03 北京集创北方科技股份有限公司 半导体器件结构形成方法、感光组件、传感器、电子设备

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JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
US5238864A (en) * 1990-12-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of making solid-state imaging device
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
EP0883187A1 (en) * 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
JP2001284568A (ja) * 2000-03-31 2001-10-12 Sharp Corp 固体撮像装置
JP2002223393A (ja) * 2000-11-27 2002-08-09 Sanyo Electric Co Ltd 電荷転送素子
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
US7187017B2 (en) * 2003-06-30 2007-03-06 Rohm Co., Ltd. Image sensor and method for forming isolation structure for photodiode
JP2006294871A (ja) * 2005-04-11 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20070045668A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. Vertical anti-blooming control and cross-talk reduction for imagers
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
US7875916B2 (en) * 2005-09-28 2011-01-25 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US7728277B2 (en) * 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
JP4923596B2 (ja) * 2006-01-31 2012-04-25 ソニー株式会社 固体撮像装置
JP4859045B2 (ja) 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109326618A (zh) * 2017-07-31 2019-02-12 松下知识产权经营株式会社 摄像装置
CN109326618B (zh) * 2017-07-31 2024-03-01 松下知识产权经营株式会社 摄像装置
CN113490993A (zh) * 2019-02-26 2021-10-08 Asml荷兰有限公司 具有增益元件的带电粒子检测器
CN113490993B (zh) * 2019-02-26 2024-05-31 Asml荷兰有限公司 具有增益元件的带电粒子检测器

Also Published As

Publication number Publication date
US20090243025A1 (en) 2009-10-01
KR20100133445A (ko) 2010-12-21
TW201001688A (en) 2010-01-01
JP2011517509A (ja) 2011-06-09
EP2269222A1 (en) 2011-01-05
WO2009120317A1 (en) 2009-10-01

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Effective date: 20110715

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Applicant before: Eastman Kodak Corp.

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110216