TW201001688A - A photodetector having an extended depletion depth - Google Patents

A photodetector having an extended depletion depth Download PDF

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Publication number
TW201001688A
TW201001688A TW098109569A TW98109569A TW201001688A TW 201001688 A TW201001688 A TW 201001688A TW 098109569 A TW098109569 A TW 098109569A TW 98109569 A TW98109569 A TW 98109569A TW 201001688 A TW201001688 A TW 201001688A
Authority
TW
Taiwan
Prior art keywords
layer
substrate
type
image sensor
collection
Prior art date
Application number
TW098109569A
Other languages
English (en)
Chinese (zh)
Inventor
Eric G Stevens
Hung Q Doan
Shou-Gwo Wuu
Chung-Wei Chang
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW201001688A publication Critical patent/TW201001688A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
TW098109569A 2008-03-25 2009-03-24 A photodetector having an extended depletion depth TW201001688A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/054,505 US20090243025A1 (en) 2008-03-25 2008-03-25 Pixel structure with a photodetector having an extended depletion depth

Publications (1)

Publication Number Publication Date
TW201001688A true TW201001688A (en) 2010-01-01

Family

ID=40786478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098109569A TW201001688A (en) 2008-03-25 2009-03-24 A photodetector having an extended depletion depth

Country Status (7)

Country Link
US (1) US20090243025A1 (enExample)
EP (1) EP2269222A1 (enExample)
JP (1) JP2011517509A (enExample)
KR (1) KR20100133445A (enExample)
CN (1) CN101978500A (enExample)
TW (1) TW201001688A (enExample)
WO (1) WO2009120317A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464867B (zh) * 2010-06-14 2014-12-11 新力股份有限公司 固態影像拾取器件及其製造方法，以及影像拾取裝置
TWI762629B (zh) * 2017-07-31 2022-05-01 日商松下知識產權經營股份有限公司 拍攝裝置

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JP5282543B2 (ja) * 2008-11-28 2013-09-04 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
JP5648922B2 (ja) * 2009-10-05 2015-01-07 国立大学法人静岡大学 半導体素子及び固体撮像装置
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
CN102222678A (zh) * 2011-06-22 2011-10-19 格科微电子（上海）有限公司 Cmos图像传感器及其形成方法
JP6159184B2 (ja) * 2013-07-25 2017-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP6161454B2 (ja) * 2013-07-25 2017-07-12 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
TWI837648B (zh) * 2017-07-31 2024-04-01 日商松下知識產權經營股份有限公司 拍攝裝置
KR102660806B1 (ko) * 2019-02-26 2024-04-26 에이에스엠엘 네델란즈 비.브이. 이득 엘리먼트를 갖는 하전 입자 검출기
TWI821781B (zh) * 2021-07-29 2023-11-11 神盾股份有限公司 光感測裝置
KR102712619B1 (ko) * 2022-01-20 2024-10-02 주식회사 시지트로닉스 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법
CN115513242B (zh) * 2022-11-01 2025-10-03 北京集创北方科技股份有限公司 半导体器件结构形成方法、感光组件、传感器、电子设备

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JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
US5238864A (en) * 1990-12-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of making solid-state imaging device
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
EP0883187A1 (en) * 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
JP2001284568A (ja) * 2000-03-31 2001-10-12 Sharp Corp 固体撮像装置
JP2002223393A (ja) * 2000-11-27 2002-08-09 Sanyo Electric Co Ltd 電荷転送素子
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
US7187017B2 (en) * 2003-06-30 2007-03-06 Rohm Co., Ltd. Image sensor and method for forming isolation structure for photodiode
JP2006294871A (ja) * 2005-04-11 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20070045668A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. Vertical anti-blooming control and cross-talk reduction for imagers
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
US7875916B2 (en) * 2005-09-28 2011-01-25 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US7728277B2 (en) * 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
JP4923596B2 (ja) * 2006-01-31 2012-04-25 ソニー株式会社 固体撮像装置
JP4859045B2 (ja) 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464867B (zh) * 2010-06-14 2014-12-11 新力股份有限公司 固態影像拾取器件及其製造方法，以及影像拾取裝置
TWI762629B (zh) * 2017-07-31 2022-05-01 日商松下知識產權經營股份有限公司 拍攝裝置

Also Published As

Publication number Publication date
US20090243025A1 (en) 2009-10-01
KR20100133445A (ko) 2010-12-21
CN101978500A (zh) 2011-02-16
JP2011517509A (ja) 2011-06-09
EP2269222A1 (en) 2011-01-05
WO2009120317A1 (en) 2009-10-01

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