KR20100133445A - 확장된 공핍 깊이를 갖는 광검출기 - Google Patents

확장된 공핍 깊이를 갖는 광검출기 Download PDF

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Publication number
KR20100133445A
KR20100133445A KR1020107023683A KR20107023683A KR20100133445A KR 20100133445 A KR20100133445 A KR 20100133445A KR 1020107023683 A KR1020107023683 A KR 1020107023683A KR 20107023683 A KR20107023683 A KR 20107023683A KR 20100133445 A KR20100133445 A KR 20100133445A
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South Korea
Prior art keywords
layer
substrate
image sensor
conductivity type
substrate layer
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English (en)
Korean (ko)
Inventor
에릭 고든 스티븐스
헝 쿠옥 도안
쇼우-고우 유
츙-웨이 창
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이스트맨 코닥 캄파니
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Publication of KR20100133445A publication Critical patent/KR20100133445A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
KR1020107023683A 2008-03-25 2009-03-24 확장된 공핍 깊이를 갖는 광검출기 Ceased KR20100133445A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/054,505 US20090243025A1 (en) 2008-03-25 2008-03-25 Pixel structure with a photodetector having an extended depletion depth
US12/054,505 2008-03-25

Publications (1)

Publication Number Publication Date
KR20100133445A true KR20100133445A (ko) 2010-12-21

Family

ID=40786478

Family Applications (1)

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KR1020107023683A Ceased KR20100133445A (ko) 2008-03-25 2009-03-24 확장된 공핍 깊이를 갖는 광검출기

Country Status (7)

Country Link
US (1) US20090243025A1 (enExample)
EP (1) EP2269222A1 (enExample)
JP (1) JP2011517509A (enExample)
KR (1) KR20100133445A (enExample)
CN (1) CN101978500A (enExample)
TW (1) TW201001688A (enExample)
WO (1) WO2009120317A1 (enExample)

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KR20230112262A (ko) * 2022-01-20 2023-07-27 주식회사 시지트로닉스 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법

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US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
KR101363532B1 (ko) * 2009-10-05 2014-02-14 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 소자 및 고체 촬상 장치
JP5682150B2 (ja) * 2010-06-14 2015-03-11 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
CN102222678A (zh) * 2011-06-22 2011-10-19 格科微电子（上海）有限公司 Cmos图像传感器及其形成方法
JP6161454B2 (ja) * 2013-07-25 2017-07-12 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
JP6159184B2 (ja) * 2013-07-25 2017-07-05 キヤノン株式会社 光電変換装置及び撮像システム
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
TWI837648B (zh) * 2017-07-31 2024-04-01 日商松下知識產權經營股份有限公司 拍攝裝置
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
JP7286778B2 (ja) * 2019-02-26 2023-06-05 エーエスエムエル ネザーランズ ビー．ブイ． 利得要素を備えた荷電粒子検出器およびその製造方法
CN114068739A (zh) * 2021-07-29 2022-02-18 神盾股份有限公司 光感测装置
CN115513242B (zh) * 2022-11-01 2025-10-03 北京集创北方科技股份有限公司 半导体器件结构形成方法、感光组件、传感器、电子设备

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JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
US5238864A (en) * 1990-12-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of making solid-state imaging device
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
EP0883187A1 (en) * 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
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JP2002223393A (ja) * 2000-11-27 2002-08-09 Sanyo Electric Co Ltd 電荷転送素子
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
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KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20070045668A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. Vertical anti-blooming control and cross-talk reduction for imagers
US7875916B2 (en) * 2005-09-28 2011-01-25 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
US7728277B2 (en) * 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
JP4923596B2 (ja) * 2006-01-31 2012-04-25 ソニー株式会社 固体撮像装置
JP4859045B2 (ja) * 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230112262A (ko) * 2022-01-20 2023-07-27 주식회사 시지트로닉스 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법

Also Published As

Publication number Publication date
US20090243025A1 (en) 2009-10-01
WO2009120317A1 (en) 2009-10-01
JP2011517509A (ja) 2011-06-09
TW201001688A (en) 2010-01-01
EP2269222A1 (en) 2011-01-05
CN101978500A (zh) 2011-02-16

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