JP2011517509A - 増大された空乏層深さを有する光検出器 - Google Patents

増大された空乏層深さを有する光検出器 Download PDF

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JP2011517509A
JP2011517509A JP2011501801A JP2011501801A JP2011517509A JP 2011517509 A JP2011517509 A JP 2011517509A JP 2011501801 A JP2011501801 A JP 2011501801A JP 2011501801 A JP2011501801 A JP 2011501801A JP 2011517509 A JP2011517509 A JP 2011517509A
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JP2011517509A5 (enExample
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ゴードン スティーヴンス，エリック
コック ドアン，ユン
ウウ，ショウ−グー
チャン，チュン−ウェイ
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
JP2011501801A 2008-03-25 2009-03-24 増大された空乏層深さを有する光検出器 Pending JP2011517509A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/054,505 US20090243025A1 (en) 2008-03-25 2008-03-25 Pixel structure with a photodetector having an extended depletion depth
US12/054,505 2008-03-25
PCT/US2009/001835 WO2009120317A1 (en) 2008-03-25 2009-03-24 A photodetector having an extended depletion depth

Publications (2)

Publication Number Publication Date
JP2011517509A true JP2011517509A (ja) 2011-06-09
JP2011517509A5 JP2011517509A5 (enExample) 2012-03-01

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JP2011501801A Pending JP2011517509A (ja) 2008-03-25 2009-03-24 増大された空乏層深さを有する光検出器

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US (1) US20090243025A1 (enExample)
EP (1) EP2269222A1 (enExample)
JP (1) JP2011517509A (enExample)
KR (1) KR20100133445A (enExample)
CN (1) CN101978500A (enExample)
TW (1) TW201001688A (enExample)
WO (1) WO2009120317A1 (enExample)

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JP2015026695A (ja) * 2013-07-25 2015-02-05 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
JP2015026696A (ja) * 2013-07-25 2015-02-05 キヤノン株式会社 光電変換装置及び撮像システム
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置

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JP5282543B2 (ja) * 2008-11-28 2013-09-04 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
KR101363532B1 (ko) * 2009-10-05 2014-02-14 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 소자 및 고체 촬상 장치
JP5682150B2 (ja) * 2010-06-14 2015-03-11 ソニー株式会社 固体撮像素子及びその製造方法、撮像装置
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
CN102222678A (zh) * 2011-06-22 2011-10-19 格科微电子（上海）有限公司 Cmos图像传感器及其形成方法
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
TWI837648B (zh) * 2017-07-31 2024-04-01 日商松下知識產權經營股份有限公司 拍攝裝置
JP7286778B2 (ja) * 2019-02-26 2023-06-05 エーエスエムエル ネザーランズ ビー．ブイ． 利得要素を備えた荷電粒子検出器およびその製造方法
CN114068739A (zh) * 2021-07-29 2022-02-18 神盾股份有限公司 光感测装置
KR102712619B1 (ko) * 2022-01-20 2024-10-02 주식회사 시지트로닉스 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법
CN115513242B (zh) * 2022-11-01 2025-10-03 北京集创北方科技股份有限公司 半导体器件结构形成方法、感光组件、传感器、电子设备

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JP2007207891A (ja) * 2006-01-31 2007-08-16 Sony Corp 固体撮像装置、及び固体撮像装置の製造方法
JP2008066480A (ja) * 2006-09-06 2008-03-21 Sharp Corp 固体撮像素子および電子情報機器

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US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
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JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
JP2001284568A (ja) * 2000-03-31 2001-10-12 Sharp Corp 固体撮像装置
JP2002223393A (ja) * 2000-11-27 2002-08-09 Sanyo Electric Co Ltd 電荷転送素子
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JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
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JP2006294871A (ja) * 2005-04-11 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
US7875916B2 (en) * 2005-09-28 2011-01-25 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
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WO2007024819A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. BtFRIED DOPED REGION FOR VERTICAL ANTI-BLOOMING CONTROL AND CROSS-TALK REDUCTION FOR IMAGERS
JP2007207891A (ja) * 2006-01-31 2007-08-16 Sony Corp 固体撮像装置、及び固体撮像装置の製造方法
JP2008066480A (ja) * 2006-09-06 2008-03-21 Sharp Corp 固体撮像素子および電子情報機器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015026695A (ja) * 2013-07-25 2015-02-05 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
JP2015026696A (ja) * 2013-07-25 2015-02-05 キヤノン株式会社 光電変換装置及び撮像システム
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
US20090243025A1 (en) 2009-10-01
WO2009120317A1 (en) 2009-10-01
KR20100133445A (ko) 2010-12-21
TW201001688A (en) 2010-01-01
EP2269222A1 (en) 2011-01-05
CN101978500A (zh) 2011-02-16

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