JP2011516728A5 - - Google Patents
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- Publication number
- JP2011516728A5 JP2011516728A5 JP2011502488A JP2011502488A JP2011516728A5 JP 2011516728 A5 JP2011516728 A5 JP 2011516728A5 JP 2011502488 A JP2011502488 A JP 2011502488A JP 2011502488 A JP2011502488 A JP 2011502488A JP 2011516728 A5 JP2011516728 A5 JP 2011516728A5
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- frequency signal
- power source
- anode
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 238000000151 deposition Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 229910052715 tantalum Inorganic materials 0.000 claims 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 5
- 238000004544 sputter deposition Methods 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 230000001360 synchronised effect Effects 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4201508P | 2008-04-03 | 2008-04-03 | |
| US61/042,015 | 2008-04-03 | ||
| PCT/IB2009/051419 WO2009122378A1 (en) | 2008-04-03 | 2009-04-03 | Apparatus for sputtering and a method of fabricating a metallization structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011516728A JP2011516728A (ja) | 2011-05-26 |
| JP2011516728A5 true JP2011516728A5 (enExample) | 2012-03-08 |
| JP5759891B2 JP5759891B2 (ja) | 2015-08-05 |
Family
ID=40756963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011502488A Active JP5759891B2 (ja) | 2008-04-03 | 2009-04-03 | スパッタリング装置および金属化構造体を製造する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8691058B2 (enExample) |
| EP (1) | EP2268844B1 (enExample) |
| JP (1) | JP5759891B2 (enExample) |
| KR (2) | KR101959113B1 (enExample) |
| CN (1) | CN101983253B (enExample) |
| TW (1) | TWI398537B (enExample) |
| WO (1) | WO2009122378A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
| US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| WO2006036846A1 (en) * | 2004-09-24 | 2006-04-06 | Zond, Inc. | Apparatus for generating high-current electrical discharges |
| US8222139B2 (en) * | 2010-03-30 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing (CMP) processing of through-silicon via (TSV) and contact plug simultaneously |
| CN102453881B (zh) * | 2010-10-27 | 2014-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 物理气相沉积设备及磁控溅射方法 |
| EP2565291A1 (en) * | 2011-08-31 | 2013-03-06 | Hauzer Techno Coating BV | Vaccum coating apparatus and method for depositing nanocomposite coatings |
| EP2761050B1 (en) * | 2011-09-30 | 2021-08-25 | CemeCon AG | Coating of substrates using hipims |
| JP6093968B2 (ja) * | 2012-08-28 | 2017-03-15 | 国立研究開発法人産業技術総合研究所 | 電界放出素子用エミッタの作製方法 |
| WO2015082547A1 (en) * | 2013-12-04 | 2015-06-11 | Oerlikon Advanced Technologies Ag | Sputtering source arrangement, sputtering system and method of manufacturing metal-coated plate-shaped substrates |
| JP6082165B2 (ja) * | 2014-05-22 | 2017-02-15 | キヤノンアネルバ株式会社 | 金属膜および金属膜の成膜方法 |
| US9812305B2 (en) * | 2015-04-27 | 2017-11-07 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
| CN105448818B (zh) * | 2015-12-31 | 2018-10-16 | 上海集成电路研发中心有限公司 | 一种应用于半导体铜互连工艺的磁控溅射方法 |
| TWI615494B (zh) * | 2016-07-05 | 2018-02-21 | 鍍製光學硬膜之封閉式高能磁控濺鍍裝置及其製造方法 | |
| US20190088457A1 (en) * | 2017-09-19 | 2019-03-21 | Applied Materials, Inc. | Sync controller for high impulse magnetron sputtering |
| US10964590B2 (en) * | 2017-11-15 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact metallization process |
| US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
| FR3097237B1 (fr) * | 2019-06-11 | 2021-05-28 | Safran | Procédé de revêtement d'un substrat par du nitrure de tantale |
| US12080571B2 (en) | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
| US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
| US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
| US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
| US12195314B2 (en) | 2021-02-02 | 2025-01-14 | Applied Materials, Inc. | Cathode exchange mechanism to improve preventative maintenance time for cluster system |
| US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
| US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
| CN120362484B (zh) * | 2025-06-25 | 2025-09-05 | 西安稀有金属材料研究院有限公司 | 钽基多层复合粉末及其制备方法、冷喷涂涂层材料 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE9704607D0 (sv) * | 1997-12-09 | 1997-12-09 | Chemfilt R & D Ab | A method and apparatus for magnetically enhanced sputtering |
| US7253109B2 (en) * | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
| US6911124B2 (en) * | 1998-09-24 | 2005-06-28 | Applied Materials, Inc. | Method of depositing a TaN seed layer |
| EP1019954B1 (en) * | 1998-02-04 | 2013-05-15 | Applied Materials, Inc. | Method and apparatus for low-temperature annealing of electroplated copper micro-structures in the production of a microelectronic device |
| US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
| US6193855B1 (en) * | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
| US6200433B1 (en) * | 1999-11-01 | 2001-03-13 | Applied Materials, Inc. | IMP technology with heavy gas sputtering |
| US6350353B2 (en) | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
| JP2001335919A (ja) * | 2000-03-21 | 2001-12-07 | Murata Mfg Co Ltd | αタンタル膜の製造方法、αタンタル膜及びそれを用いた素子 |
| US20020142589A1 (en) * | 2001-01-31 | 2002-10-03 | Applied Materials, Inc. | Method of obtaining low temperature alpha-ta thin films using wafer bias |
| EP1384257A2 (en) * | 2001-05-04 | 2004-01-28 | Tokyo Electron Limited | Ionized pvd with sequential deposition and etching |
| US6709553B2 (en) * | 2002-05-09 | 2004-03-23 | Applied Materials, Inc. | Multiple-step sputter deposition |
| JP2004131839A (ja) * | 2002-06-17 | 2004-04-30 | Applied Materials Inc | パルス化された電力によるスパッタリング堆積 |
| JP4497447B2 (ja) * | 2003-03-03 | 2010-07-07 | 株式会社アルバック | パルス状直流スパッタ成膜方法及び該方法のための成膜装置 |
| US7686926B2 (en) * | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
| CN1680618A (zh) * | 2004-11-30 | 2005-10-12 | 大连理工大学 | 脉冲偏压电弧离子镀钛/氮化钛纳米多层超硬薄膜的方法 |
| US20060172536A1 (en) * | 2005-02-03 | 2006-08-03 | Brown Karl M | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece |
| WO2007032858A1 (en) * | 2005-09-13 | 2007-03-22 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
| JP5238687B2 (ja) * | 2006-04-21 | 2013-07-17 | コムコン・アーゲー | 被覆物 |
| CN101589450B (zh) * | 2006-12-12 | 2013-08-28 | Oc欧瑞康巴尔斯公司 | 生成靶溅射以在衬底上产生涂层的设备和在其上实施电压脉冲的方法 |
| WO2009053479A2 (en) * | 2007-10-26 | 2009-04-30 | Oc Oerlikon Balzers Ag | Application of hipims to through silicon via metallization in three-dimensional wafer packaging |
-
2009
- 2009-04-03 KR KR1020167011413A patent/KR101959113B1/ko active Active
- 2009-04-03 EP EP09728042.4A patent/EP2268844B1/en active Active
- 2009-04-03 TW TW098111286A patent/TWI398537B/zh active
- 2009-04-03 US US12/417,727 patent/US8691058B2/en active Active
- 2009-04-03 KR KR1020107022019A patent/KR101647515B1/ko active Active
- 2009-04-03 JP JP2011502488A patent/JP5759891B2/ja active Active
- 2009-04-03 CN CN2009801125478A patent/CN101983253B/zh active Active
- 2009-04-03 WO PCT/IB2009/051419 patent/WO2009122378A1/en not_active Ceased
-
2014
- 2014-02-17 US US14/181,886 patent/US9644261B2/en active Active
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