JP2017534750A5 - - Google Patents

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JP2017534750A5
JP2017534750A5 JP2017510506A JP2017510506A JP2017534750A5 JP 2017534750 A5 JP2017534750 A5 JP 2017534750A5 JP 2017510506 A JP2017510506 A JP 2017510506A JP 2017510506 A JP2017510506 A JP 2017510506A JP 2017534750 A5 JP2017534750 A5 JP 2017534750A5
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supplying
sputtering
substrate
processing chamber
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JP2017510506A
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JP6673903B2 (ja
JP2017534750A (ja
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Priority claimed from US14/820,152 external-priority patent/US9695503B2/en
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JP2017510506A 2014-08-22 2015-08-14 高密度高Sp3含有層を実現するための高電力インパルスマグネトロンスパッタリング処理 Expired - Fee Related JP6673903B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462040809P 2014-08-22 2014-08-22
US62/040,809 2014-08-22
US14/820,152 2015-08-06
US14/820,152 US9695503B2 (en) 2014-08-22 2015-08-06 High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
PCT/US2015/045318 WO2016028640A1 (en) 2014-08-22 2015-08-14 A high power impulse magnetron sputtering process to achieve a high density high sp3 containing layer

Publications (3)

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JP2017534750A JP2017534750A (ja) 2017-11-24
JP2017534750A5 true JP2017534750A5 (enExample) 2018-09-20
JP6673903B2 JP6673903B2 (ja) 2020-03-25

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JP2017510506A Expired - Fee Related JP6673903B2 (ja) 2014-08-22 2015-08-14 高密度高Sp3含有層を実現するための高電力インパルスマグネトロンスパッタリング処理

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US (1) US9695503B2 (enExample)
JP (1) JP6673903B2 (enExample)
KR (1) KR20170044174A (enExample)
CN (1) CN106663609B (enExample)
TW (1) TWI663276B (enExample)
WO (1) WO2016028640A1 (enExample)

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