CN106663609B - 用以实现高密度高sp3含量层的高功率脉冲磁控溅镀工艺 - Google Patents

用以实现高密度高sp3含量层的高功率脉冲磁控溅镀工艺 Download PDF

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CN106663609B
CN106663609B CN201580045005.9A CN201580045005A CN106663609B CN 106663609 B CN106663609 B CN 106663609B CN 201580045005 A CN201580045005 A CN 201580045005A CN 106663609 B CN106663609 B CN 106663609B
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substrate
plasma
sputtering
target
gas
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CN106663609A (zh
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M·W·斯托威尔
陈咏梅
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C23C14/0611—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
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  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN201580045005.9A 2014-08-22 2015-08-14 用以实现高密度高sp3含量层的高功率脉冲磁控溅镀工艺 Expired - Fee Related CN106663609B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462040809P 2014-08-22 2014-08-22
US62/040,809 2014-08-22
US14/820,152 2015-08-06
US14/820,152 US9695503B2 (en) 2014-08-22 2015-08-06 High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
PCT/US2015/045318 WO2016028640A1 (en) 2014-08-22 2015-08-14 A high power impulse magnetron sputtering process to achieve a high density high sp3 containing layer

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CN106663609A CN106663609A (zh) 2017-05-10
CN106663609B true CN106663609B (zh) 2020-04-03

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US (1) US9695503B2 (enExample)
JP (1) JP6673903B2 (enExample)
KR (1) KR20170044174A (enExample)
CN (1) CN106663609B (enExample)
TW (1) TWI663276B (enExample)
WO (1) WO2016028640A1 (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US10227691B2 (en) 2015-12-21 2019-03-12 IonQuest LLC Magnetically enhanced low temperature-high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond like films
US10957519B2 (en) 2015-12-21 2021-03-23 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
US10858727B2 (en) * 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
US20180108519A1 (en) * 2016-10-17 2018-04-19 Applied Materials, Inc. POWER DELIVERY FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING (HiPIMS)
US11313034B2 (en) * 2016-11-18 2022-04-26 Applied Materials, Inc. Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition
US10570506B2 (en) * 2017-01-24 2020-02-25 Applied Materials, Inc. Method to improve film quality for PVD carbon with reactive gas and bias power
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US20200176234A1 (en) * 2017-04-07 2020-06-04 Ionquest Corp. High-power resonance pulse ac hedp sputtering source and method for material processing
JP2020521874A (ja) * 2017-05-01 2020-07-27 ザ・ジョンズ・ホプキンス・ユニバーシティ ナノ双晶化ニッケル・モリブデン・タングステン合金を析出する方法
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7235683B2 (ja) 2017-06-08 2023-03-08 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
US11043375B2 (en) 2017-08-16 2021-06-22 Applied Materials, Inc. Plasma deposition of carbon hardmask
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US20190127842A1 (en) * 2017-10-30 2019-05-02 Applied Materials, Inc. Pulsed dc source for high power impulse magnetron sputtering physical vapor deposition of dielectric films and methods of application
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
WO2019118601A1 (en) * 2017-12-13 2019-06-20 Applied Materials, Inc. Spatial atomic layer deposition chamber with plasma pulsing to prevent charge damage
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
JP7407121B2 (ja) 2018-04-09 2023-12-28 アプライド マテリアルズ インコーポレイテッド パターニング用途のためのカーボンハードマスク及び関連方法
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US11158507B2 (en) 2018-06-22 2021-10-26 Applied Materials, Inc. In-situ high power implant to relieve stress of a thin film
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
JP7631192B2 (ja) * 2018-10-24 2025-02-18 エヴァテック・アーゲー 液体スパッタターゲット
US11180847B2 (en) 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US12209302B2 (en) 2018-12-19 2025-01-28 Evatec Ag Vacuum system and method to deposit a compound layer
JP2020117739A (ja) * 2019-01-18 2020-08-06 日東電工株式会社 膜付き対象物の製造方法
CN110138362B (zh) * 2019-04-10 2020-10-27 北京航空航天大学 一种从靶材泵出离子的新型脉动等离子体的电源
EP3736358A1 (en) * 2019-05-08 2020-11-11 Walter Ag A coated cutting tool
US11595971B1 (en) 2019-05-28 2023-02-28 Marvell Asia Pte Ltd Quieting a wireless local area network
CN110184577B (zh) * 2019-06-19 2021-06-11 中国科学院宁波材料技术与工程研究所 柔性基底表面兼具压阻性能与韧性的非晶碳膜的制备方法及其应用
JP7588609B2 (ja) 2019-07-01 2024-11-22 アプライド マテリアルズ インコーポレイテッド プラズマカップリング材料の最適化による膜特性の変調
US11342194B2 (en) * 2019-11-25 2022-05-24 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN111304615B (zh) * 2020-04-01 2024-07-30 昆山浦元真空技术工程有限公司 战斗机驾驶舱玻璃罩表面物理气相沉积设备
SE544676C2 (en) * 2020-04-06 2022-10-11 Ionautics Ab Method for monitoring process conditions of, and method for controlling, a plasma pvd process
CN111560588B (zh) * 2020-05-09 2022-05-03 南方科技大学 用于超高真空环境的磁控溅射靶、磁控溅射装置
CN115885057B (zh) * 2020-06-03 2025-09-16 应用材料公司 沉积设备、处理系统以及制造光电装置层的方法
WO2021244738A1 (en) * 2020-06-03 2021-12-09 Applied Materials, Inc. Deposition apparatus, processing system, method of maintaining a deposition apparatus, and method of manufacturing a layer of an optoelectronic device
US11664226B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density carbon films for hardmasks and other patterning applications
US11664214B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US11404263B2 (en) * 2020-08-07 2022-08-02 Applied Materials, Inc. Deposition of low-stress carbon-containing layers
US11594416B2 (en) 2020-08-31 2023-02-28 Applied Materials, Inc. Tribological properties of diamond films
EP3964604A1 (en) * 2020-09-03 2022-03-09 IHI Ionbond AG Doped dlc for bipolar plate (bpp) and tribological applications
US20220127721A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. Depositing Low Roughness Diamond Films
CN112030133B (zh) * 2020-11-06 2021-03-23 上海征世科技有限公司 一种金刚石及其制备方法和应用
KR102349212B1 (ko) * 2021-04-28 2022-01-07 권순영 조성 조절이 가능한 코팅층 형성방법
KR20210059676A (ko) 2021-05-04 2021-05-25 삼성전자주식회사 반도체 장치 제조 방법
CN118339633A (zh) * 2021-12-05 2024-07-12 应用材料公司 用于金刚石膜沉积的气相前驱物种晶
US12327733B2 (en) * 2022-02-15 2025-06-10 Applied Materials, Inc. Methods to reduce UNCD film roughness
WO2023191664A1 (ru) * 2022-03-29 2023-10-05 Алитет Зигмович ЧЕПОНАС Способ выращивания алмазов
CN116685039B (zh) * 2023-01-10 2025-10-28 江苏微导纳米科技股份有限公司 一种等离子体产生方法和处理方法
US12442104B2 (en) 2023-04-20 2025-10-14 Applied Materials, Inc. Nanocrystalline diamond with amorphous interfacial layer
CN116904924B (zh) * 2023-07-19 2025-10-24 北京师范大学 一种采用双脉冲技术制备的超厚类金刚石膜及其制备方法
KR102700240B1 (ko) * 2023-12-26 2024-08-29 주식회사 바코솔루션 비정질 탄소막 마그네트론 스퍼터링 장치 및 방법 그리고 이를 사용하여 증착된 포토레지스트용 비정질 탄소막
US20250246409A1 (en) * 2024-01-25 2025-07-31 Applied Materials, Inc. Low temperature chemical vapor deposition of nanocrystalline diamond film
CN119685777A (zh) * 2024-12-19 2025-03-25 富联裕展科技(深圳)有限公司 磁控溅射镀膜方法及装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783368A (en) * 1985-11-06 1988-11-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha High heat conductive insulated substrate and method of manufacturing the same
DE102007058356A1 (de) * 2007-06-20 2008-12-24 Systec System- Und Anlagentechnik Gmbh & Co.Kg PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen
CN103088292A (zh) * 2011-10-31 2013-05-08 豪泽尔涂层技术有限公司 用于在多个工件和一个工件上沉积无氢四面体非晶碳层的装置和方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06952B2 (ja) * 1985-04-18 1994-01-05 鐘淵化学工業株式会社 硬質カ−ボン膜
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
US7247221B2 (en) 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
US8808856B2 (en) 2005-01-05 2014-08-19 Pureron Japan Co., Ltd. Apparatus and method for producing carbon film using plasma CVD and carbon film
KR100812504B1 (ko) 2006-09-05 2008-03-11 성균관대학교산학협력단 전도성 고경도 탄소박막의 제조 방법 및 박막 전계 발광소자용 전극으로의 응용
US8500963B2 (en) 2006-10-26 2013-08-06 Applied Materials, Inc. Sputtering of thermally resistive materials including metal chalcogenides
JP4755262B2 (ja) 2009-01-28 2011-08-24 株式会社神戸製鋼所 ダイヤモンドライクカーボン膜の製造方法
US9984915B2 (en) * 2014-05-30 2018-05-29 Infineon Technologies Ag Semiconductor wafer and method for processing a semiconductor wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783368A (en) * 1985-11-06 1988-11-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha High heat conductive insulated substrate and method of manufacturing the same
DE102007058356A1 (de) * 2007-06-20 2008-12-24 Systec System- Und Anlagentechnik Gmbh & Co.Kg PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen
CN103088292A (zh) * 2011-10-31 2013-05-08 豪泽尔涂层技术有限公司 用于在多个工件和一个工件上沉积无氢四面体非晶碳层的装置和方法

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WO2016028640A1 (en) 2016-02-25
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