JP2020521874A - ナノ双晶化ニッケル・モリブデン・タングステン合金を析出する方法 - Google Patents
ナノ双晶化ニッケル・モリブデン・タングステン合金を析出する方法 Download PDFInfo
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- JP2020521874A JP2020521874A JP2019560364A JP2019560364A JP2020521874A JP 2020521874 A JP2020521874 A JP 2020521874A JP 2019560364 A JP2019560364 A JP 2019560364A JP 2019560364 A JP2019560364 A JP 2019560364A JP 2020521874 A JP2020521874 A JP 2020521874A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- LCSNMIIKJKUSFF-UHFFFAOYSA-N [Ni].[Mo].[W] Chemical compound [Ni].[Mo].[W] LCSNMIIKJKUSFF-UHFFFAOYSA-N 0.000 title claims abstract description 7
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Classifications
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C22C—ALLOYS
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- C22C19/03—Alloys based on nickel or cobalt based on nickel
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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Abstract
Description
本件出願は、参照により全体が本明細書に組み入れられるものとする、2017年5月1日出願の米国仮出願第62/492,558号の恩恵を主張する。
本発明は、全米科学財団が裁定したGOALI DMR-1410301の下に政府支援で作成された。政府は本発明の所定権利を有する。
本発明は、薄膜デバイスのための金属コーティング及び材料に関する。より具体的には、本発明は、高強度、機械的及び熱的安定性並びに物理的特性の魅力的バランスを有するナノ双晶化ニッケル・モリブデン・タングステン合金を析出する方法に関する。
は歪み速度であり、またHは被膜の硬度である。粗粒多結晶FCC金属の活性化体積は、ほぼ1,000b3(Niに関しては、バーガーズベクトルの大きさb=0.25nm)であり、またナノ結晶及びナノ双晶であるときには20b3未満である。Ni83.6Mo14W2.4被膜の活性化体積は20b3を下回る(表1参照)と測定されたが、これはナノ双晶によって律則される変形で一定である。
これは、測定された引張強度(図4及び表示1参照)に近似する。モデルが実験結果に一致することは、種々の増強メカニズムの有効性を確定するのにこのモデルを使用することができ、またナノ双晶構造の存在は最大効果を有する。
ΔσFleischer=447MPaである。
(H0=800MPa及びκ=18.7GPa/nm1/2)に基づく粒境界増強化は
σy,HP=448MPaを与える。固溶体増強化及び粒境界増強化は加法的であると仮定すると、材料の推定される降伏強度は945MPaであり、実験的測定(表IV参照)よりも僅かに低い。この差異は、i) ランダム配向多結晶を仮定し、ii) マトリクス内に残存するナノ双晶を有する柱状結晶粒、及びiii) 結晶粒内の分散粒子による沈殿物硬化に由来する。1000℃でアニーリングしたサンプルは、代表的に図17Bに示すように、被膜の延性破綻形態、すなわちディンプル及びネッキングを示す。マトリクスからの沈殿物分離及び/又は個別沈殿物の粗砕を招く歪みの局在化も観測された。
Claims (20)
- 薄膜であって、
超高引張強度、熱的及び機械的な安定性、高密度、低CTE、バルク合金に類似する所定電気的特性、並びに前記薄膜の平面内に位置するナノスケールの積層断層及び双晶の構造を有する、ニッケル(Ni)、モリブデン(Mo)、タングステン(W)の合金(Ni-Mo-W)を備え、
前記合金は独立した薄膜又はデバイスのコーティングとして析出されている、薄膜。 - 請求項1記載の薄膜において、前記合金の析出は、直流スパッタ析出によって達成される、薄膜。
- 請求項1記載の薄膜において、さらに、前記薄膜の平面内で配向した強力<111>結晶学的肌理及び高密度のナノスケール平面状欠陥(積層断層及び双晶)を持つ結晶学的構造を備える、薄膜。
- 請求項1記載の薄膜において、さらに、2.5GPaを超える引張強度を有する、薄膜。
- 請求項1記載の薄膜において、微細構造的にみて安定性を示すものであり、また3.4GPaほどの高い応力又は600℃ほどの高温に曝露されるとき結晶粒粗大化しない、薄膜。
- 請求項1記載の薄膜において、さらに、純Niにおけるよりも低い熱膨張係数を備える、薄膜。
- 請求項1記載の薄膜において、さらに、バルクの粗大粒形態の合金に類似する導電率を備える、薄膜。
- 請求項1記載の薄膜において、機械的強度、安定性及び硬度が摩擦及び摩耗に対して優れたトライボロジー的保護をもたらす保護コーティングとして析出することができる、薄膜。
- 請求項1記載の薄膜において、機械的特性が強度及び強靱性の望ましいバランスを得るように変調させる熱処理であって、例えば、1時間にわたる1,000℃での熱アニーリングにより、結果として1.2GPaの引張強度及び9%の引張延性を有する薄膜を生ずる、該熱処理をする、薄膜。
- ニッケル・モリブデン・タングステン(Ni-Mo-W)の薄膜を形成する方法であって、
Ni-Mo-Wを析出するステップと、並びに
ナノ双晶構造、高強度、熱的及び機械的な安定性、高密度、所定の電気的及びCTE特性を生ずるステップと、
を備える、方法。 - 請求項10記載の方法において、さらに、スパッタ析出を使用して前記Ni-Mo-Wを析出させるステップを備える、方法。
- 請求項11記載の方法において、さらに、直流スパッタ析出を用いて前記Ni-Mo-Wを析出させるステップを備える、方法。
- 請求項10記載の方法において、さらに、電気析出を用いて前記Ni-Mo-Wを析出させるステップを備える、方法。
- 請求項10記載の方法において、さらに、強力な<111>結晶学的肌理及び薄膜の平面に配向する高密度のナノスケールの平面状欠陥(積層断層及び双晶)を有する結晶学的構造を生成するステップを備える、方法。
- 請求項10記載の方法において、さらに、2.5GPaを超える引張強度を有する薄膜を生成するステップを備える、方法。
- 請求項10記載の方法において、さらに、微細構造的にみて安定性を示すものであり、また3.4GPaほどの高い応力又は600℃ほどの高温に曝露されるとき結晶粒粗大化しないような薄膜を生成するステップを備える、方法。
- 請求項10記載の方法において、さらに、純Niにおけるよりも低い熱膨張係数を有する薄膜を生成するステップを備える、方法。
- 請求項10記載の方法において、さらに、バルクの粗大粒形態の合金に類似する導電率を有する薄膜を生成するステップを備える、方法。
- 請求項10記載の方法において、さらに、機械的強度、安定性及び硬度が摩擦及び摩耗に対して優れたトライボロジー的保護をもたらす保護コーティングとして前記薄膜を析出するステップを備える、方法。
- 請求項10記載の方法において、さらに、機械的特性が強度及び強靱性の望ましいバランスを得るように変調させる熱処理をするステップであって、例えば、1時間にわたる1,000℃での熱アニーリングによって、結果として1.2GPaの引張強度及び9%の引張延性を有する薄膜を生ずる熱処理ステップを備える、方法。
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