TWI398537B - 濺鍍設備及用以製造金屬化結構的方法 - Google Patents

濺鍍設備及用以製造金屬化結構的方法 Download PDF

Info

Publication number
TWI398537B
TWI398537B TW098111286A TW98111286A TWI398537B TW I398537 B TWI398537 B TW I398537B TW 098111286 A TW098111286 A TW 098111286A TW 98111286 A TW98111286 A TW 98111286A TW I398537 B TWI398537 B TW I398537B
Authority
TW
Taiwan
Prior art keywords
layer
power source
cathode
substrate
frequency signal
Prior art date
Application number
TW098111286A
Other languages
English (en)
Chinese (zh)
Other versions
TW200944606A (en
Inventor
Jurgen Weichart
Mohamed Elghazzali
Stefan Bammesberger
Dennis Minkoley
Original Assignee
Oc Oerlikon Balzers Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oc Oerlikon Balzers Ag filed Critical Oc Oerlikon Balzers Ag
Publication of TW200944606A publication Critical patent/TW200944606A/zh
Application granted granted Critical
Publication of TWI398537B publication Critical patent/TWI398537B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW098111286A 2008-04-03 2009-04-03 濺鍍設備及用以製造金屬化結構的方法 TWI398537B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4201508P 2008-04-03 2008-04-03

Publications (2)

Publication Number Publication Date
TW200944606A TW200944606A (en) 2009-11-01
TWI398537B true TWI398537B (zh) 2013-06-11

Family

ID=40756963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098111286A TWI398537B (zh) 2008-04-03 2009-04-03 濺鍍設備及用以製造金屬化結構的方法

Country Status (7)

Country Link
US (2) US8691058B2 (enExample)
EP (1) EP2268844B1 (enExample)
JP (1) JP5759891B2 (enExample)
KR (2) KR101959113B1 (enExample)
CN (1) CN101983253B (enExample)
TW (1) TWI398537B (enExample)
WO (1) WO2009122378A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
WO2006036846A1 (en) * 2004-09-24 2006-04-06 Zond, Inc. Apparatus for generating high-current electrical discharges
US8222139B2 (en) * 2010-03-30 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polishing (CMP) processing of through-silicon via (TSV) and contact plug simultaneously
CN102453881B (zh) * 2010-10-27 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 物理气相沉积设备及磁控溅射方法
EP2565291A1 (en) * 2011-08-31 2013-03-06 Hauzer Techno Coating BV Vaccum coating apparatus and method for depositing nanocomposite coatings
EP2761050B1 (en) * 2011-09-30 2021-08-25 CemeCon AG Coating of substrates using hipims
JP6093968B2 (ja) * 2012-08-28 2017-03-15 国立研究開発法人産業技術総合研究所 電界放出素子用エミッタの作製方法
WO2015082547A1 (en) * 2013-12-04 2015-06-11 Oerlikon Advanced Technologies Ag Sputtering source arrangement, sputtering system and method of manufacturing metal-coated plate-shaped substrates
JP6082165B2 (ja) * 2014-05-22 2017-02-15 キヤノンアネルバ株式会社 金属膜および金属膜の成膜方法
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
CN105448818B (zh) * 2015-12-31 2018-10-16 上海集成电路研发中心有限公司 一种应用于半导体铜互连工艺的磁控溅射方法
TWI615494B (zh) * 2016-07-05 2018-02-21 鍍製光學硬膜之封閉式高能磁控濺鍍裝置及其製造方法
US20190088457A1 (en) * 2017-09-19 2019-03-21 Applied Materials, Inc. Sync controller for high impulse magnetron sputtering
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
FR3097237B1 (fr) * 2019-06-11 2021-05-28 Safran Procédé de revêtement d'un substrat par du nitrure de tantale
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN120362484B (zh) * 2025-06-25 2025-09-05 西安稀有金属材料研究院有限公司 钽基多层复合粉末及其制备方法、冷喷涂涂层材料

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200720456A (en) * 2005-09-13 2007-06-01 Applied Materials Inc Large-area magnetron sputtering chamber with individually controlled sputtering zones

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9704607D0 (sv) * 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
EP1019954B1 (en) * 1998-02-04 2013-05-15 Applied Materials, Inc. Method and apparatus for low-temperature annealing of electroplated copper micro-structures in the production of a microelectronic device
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6193855B1 (en) * 1999-10-19 2001-02-27 Applied Materials, Inc. Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
US6200433B1 (en) * 1999-11-01 2001-03-13 Applied Materials, Inc. IMP technology with heavy gas sputtering
US6350353B2 (en) 1999-11-24 2002-02-26 Applied Materials, Inc. Alternate steps of IMP and sputtering process to improve sidewall coverage
JP2001335919A (ja) * 2000-03-21 2001-12-07 Murata Mfg Co Ltd αタンタル膜の製造方法、αタンタル膜及びそれを用いた素子
US20020142589A1 (en) * 2001-01-31 2002-10-03 Applied Materials, Inc. Method of obtaining low temperature alpha-ta thin films using wafer bias
EP1384257A2 (en) * 2001-05-04 2004-01-28 Tokyo Electron Limited Ionized pvd with sequential deposition and etching
US6709553B2 (en) * 2002-05-09 2004-03-23 Applied Materials, Inc. Multiple-step sputter deposition
JP2004131839A (ja) * 2002-06-17 2004-04-30 Applied Materials Inc パルス化された電力によるスパッタリング堆積
JP4497447B2 (ja) * 2003-03-03 2010-07-07 株式会社アルバック パルス状直流スパッタ成膜方法及び該方法のための成膜装置
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
CN1680618A (zh) * 2004-11-30 2005-10-12 大连理工大学 脉冲偏压电弧离子镀钛/氮化钛纳米多层超硬薄膜的方法
US20060172536A1 (en) * 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
JP5238687B2 (ja) * 2006-04-21 2013-07-17 コムコン・アーゲー 被覆物
CN101589450B (zh) * 2006-12-12 2013-08-28 Oc欧瑞康巴尔斯公司 生成靶溅射以在衬底上产生涂层的设备和在其上实施电压脉冲的方法
WO2009053479A2 (en) * 2007-10-26 2009-04-30 Oc Oerlikon Balzers Ag Application of hipims to through silicon via metallization in three-dimensional wafer packaging

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200720456A (en) * 2005-09-13 2007-06-01 Applied Materials Inc Large-area magnetron sputtering chamber with individually controlled sputtering zones

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
André Anders"Metal plasmas for the fabrication of nanostructures"Journal of physics :appled physics"plasma-aoded nanofabrication September 21,2006. *

Also Published As

Publication number Publication date
EP2268844B1 (en) 2020-11-25
KR20160052806A (ko) 2016-05-12
CN101983253B (zh) 2012-10-24
US9644261B2 (en) 2017-05-09
KR101647515B1 (ko) 2016-08-10
JP2011516728A (ja) 2011-05-26
US20090263966A1 (en) 2009-10-22
KR101959113B1 (ko) 2019-03-15
TW200944606A (en) 2009-11-01
EP2268844A1 (en) 2011-01-05
US20140158530A1 (en) 2014-06-12
US8691058B2 (en) 2014-04-08
CN101983253A (zh) 2011-03-02
JP5759891B2 (ja) 2015-08-05
WO2009122378A1 (en) 2009-10-08
KR20100135774A (ko) 2010-12-27

Similar Documents

Publication Publication Date Title
TWI398537B (zh) 濺鍍設備及用以製造金屬化結構的方法
US6841044B1 (en) Chemically-enhanced physical vapor deposition
US6139699A (en) Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
EP0867525B1 (en) Titanium nitride films
JP5521136B2 (ja) ３次元半導体パッケージングにおけるＳｉ貫通ビアのメタライゼーションへのＨＩＰＩＭＳの適用
US20090183984A1 (en) Seed Film Forming Method, Plasma-Assisted Film Forming System and Storage Medium
JP2002534807A (ja) フィーチャ表面カバレッジの改善を促進する銅シード層の堆積方法
JP2011500967A5 (ja) ３次元半導体パッケージングにおけるＳｉ貫通ビアのメタライゼーションへのＨＩＰＩＭＳの適用
TW460597B (en) A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation
TWI223873B (en) Nitrogen-containing tantalum films
TW402778B (en) Aluminum hole filling using ionized metal adhesion layer
JP2023510148A (ja) 制御された冷却を伴う物理的気相堆積（ｐｖｄ）によってアルミニウムを堆積させるための方法及び装置
TWI435386B (zh) 被膜表面處理方法
TW201250019A (en) Electronic component manufacturing method including step of embedding metal film
US20060040065A1 (en) Method for the surface activation on the metalization of electronic devices
JP2004131839A (ja) パルス化された電力によるスパッタリング堆積
JP2006183145A (ja) 成膜方法及び成膜装置並びに記憶媒体
JP2004200401A (ja) 金属薄膜層の形成方法
TWI242814B (en) Method for the surface activation on the metalization of electronic devices
KR20230062399A (ko) Pvd 방법 및 장치