TW200720456A - Large-area magnetron sputtering chamber with individually controlled sputtering zones - Google Patents

Large-area magnetron sputtering chamber with individually controlled sputtering zones

Info

Publication number
TW200720456A
TW200720456A TW095131178A TW95131178A TW200720456A TW 200720456 A TW200720456 A TW 200720456A TW 095131178 A TW095131178 A TW 095131178A TW 95131178 A TW95131178 A TW 95131178A TW 200720456 A TW200720456 A TW 200720456A
Authority
TW
Taiwan
Prior art keywords
processing
target
multizone
sections
chamber
Prior art date
Application number
TW095131178A
Other languages
Chinese (zh)
Inventor
Yan Ye
John White
Akihiro Hosokawa
Hien-Minh H Le
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/225,923 external-priority patent/US20070056843A1/en
Priority claimed from US11/225,922 external-priority patent/US20070056850A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200720456A publication Critical patent/TW200720456A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention generally provides a method and an apparatus for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately bias able sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone taret assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, The processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.
TW095131178A 2005-09-13 2006-08-24 Large-area magnetron sputtering chamber with individually controlled sputtering zones TW200720456A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/225,923 US20070056843A1 (en) 2005-09-13 2005-09-13 Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US11/225,922 US20070056850A1 (en) 2005-09-13 2005-09-13 Large-area magnetron sputtering chamber with individually controlled sputtering zones

Publications (1)

Publication Number Publication Date
TW200720456A true TW200720456A (en) 2007-06-01

Family

ID=37865255

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131178A TW200720456A (en) 2005-09-13 2006-08-24 Large-area magnetron sputtering chamber with individually controlled sputtering zones

Country Status (2)

Country Link
TW (1) TW200720456A (en)
WO (1) WO2007032858A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102828154A (en) * 2011-05-23 2012-12-19 三星显示有限公司 Separated target apparatus for sputtering and sputtering method using the same
TWI386507B (en) * 2009-05-19 2013-02-21 Univ Nat Kaohsiung 1St Univ Sc Magnetron sputtering equipment
TWI398537B (en) * 2008-04-03 2013-06-11 Oc Oerlikon Balzers Ag Apparatus for sputtering and a method of fabricating a metallization structure
TWI493590B (en) * 2012-12-19 2015-07-21 Taiwan Semiconductor Mfg Co Ltd Apparatus and method for extending the useful life of an ion source
TWI508312B (en) * 2008-04-07 2015-11-11 Meco Equip Eng Method and device for producing solar cells
CN107424943A (en) * 2016-05-24 2017-12-01 三星显示有限公司 The manufacture device and manufacture method of electronic installation
CN114059030A (en) * 2020-08-05 2022-02-18 东京毅力科创株式会社 Sputtering apparatus and film forming method
CN117604495A (en) * 2024-01-24 2024-02-27 楚赟精工科技(上海)有限公司 Vapor deposition equipment

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
EP2009670A1 (en) * 2007-06-28 2008-12-31 Applied Materials, Inc. Sputtering Device, Magnetron Electrode and Electrode Arrangement
WO2011152482A1 (en) * 2010-06-03 2011-12-08 株式会社アルバック Sputter deposition device
US9051638B2 (en) * 2013-03-01 2015-06-09 Poole Ventura, Inc. In-situ sputtering apparatus
WO2014143078A1 (en) * 2013-03-15 2014-09-18 Poole Ventura, Inc. In-situ sputtering apparatus
US11674227B2 (en) * 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54137642A (en) * 1978-04-12 1979-10-25 Battelle Memorial Institute Electrode for reversible fuel cell* and method of and apparatus for producing same
US4610775A (en) * 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
JPH0361367A (en) * 1989-07-28 1991-03-18 Shimadzu Corp Magnetron sputtering device
JP2902822B2 (en) * 1991-08-28 1999-06-07 株式会社日立製作所 Planar magnetron sputter electrode
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
JP2924891B1 (en) * 1998-05-15 1999-07-26 日本電気株式会社 Sputtering equipment
JP4246547B2 (en) * 2003-05-23 2009-04-02 株式会社アルバック Sputtering apparatus and sputtering method
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398537B (en) * 2008-04-03 2013-06-11 Oc Oerlikon Balzers Ag Apparatus for sputtering and a method of fabricating a metallization structure
TWI508312B (en) * 2008-04-07 2015-11-11 Meco Equip Eng Method and device for producing solar cells
TWI386507B (en) * 2009-05-19 2013-02-21 Univ Nat Kaohsiung 1St Univ Sc Magnetron sputtering equipment
CN102828154A (en) * 2011-05-23 2012-12-19 三星显示有限公司 Separated target apparatus for sputtering and sputtering method using the same
CN102828154B (en) * 2011-05-23 2016-01-13 三星显示有限公司 For the separation target assembly that sputters and the sputtering method using it
US9303313B2 (en) 2011-05-23 2016-04-05 Samsung Display Co., Ltd. Separated target apparatus for sputtering and sputtering method using the same
TWI493590B (en) * 2012-12-19 2015-07-21 Taiwan Semiconductor Mfg Co Ltd Apparatus and method for extending the useful life of an ion source
US9620326B2 (en) 2012-12-19 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Arc chamber with multiple cathodes for an ion source
CN107424943A (en) * 2016-05-24 2017-12-01 三星显示有限公司 The manufacture device and manufacture method of electronic installation
CN114059030A (en) * 2020-08-05 2022-02-18 东京毅力科创株式会社 Sputtering apparatus and film forming method
CN117604495A (en) * 2024-01-24 2024-02-27 楚赟精工科技(上海)有限公司 Vapor deposition equipment
CN117604495B (en) * 2024-01-24 2024-04-12 楚赟精工科技(上海)有限公司 Vapor deposition equipment

Also Published As

Publication number Publication date
WO2007032858A1 (en) 2007-03-22

Similar Documents

Publication Publication Date Title
TW200720456A (en) Large-area magnetron sputtering chamber with individually controlled sputtering zones
TW200702468A (en) Improved magnetron sputtering system for large-area substrates
TW200702469A (en) Improved magnetron sputtering system for large-area substrates having removable anodes
TW200745362A (en) Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
TW200603193A (en) Coater with a large-area assembly of rotatable magnetrons
WO2009065039A3 (en) Methods and apparatus for sputtering deposition using direct current
CN103038864B (en) To produce, there is low-resistivity and the Magnet without unevenness thin film for physical vapour deposition (PVD) process
TW200604365A (en) Magnetron sputtering method and magnetron sputtering system
WO2007124879A3 (en) Homogeneous pvd coating device and method
TW200710248A (en) Low voltage sputtering for large area substrates
MY171465A (en) Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates
TW200704801A (en) Multi-station sputtering and cleaning system
TW200730650A (en) Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
MX2010006214A (en) Pvd vacuum coating unit.
TW200721265A (en) Silicon dot forming method and silicon dot forming apparatus
WO2009006147A3 (en) Integrated steerability array arrangement for minimizing non-uniformity
TW200706673A (en) Temperature control of pallet in sputtering system
WO2007120967A3 (en) Rf powered target for increasing deposition uniformity in sputtering systems
WO2008106956A3 (en) Voltage supply for a sputtering system
WO2009025258A1 (en) Sputtering method and sputtering apparatus
CN206654950U (en) Sputter deposition apparatus for coated substrates
MX2013012200A (en) High power impulse magnetron sputtering method providing enhanced ionization of the sputtered particles and apparatus for its implementation.
CN106103787B (en) Process gas segmentation for static reaction sputtering
WO2009007448A3 (en) Magnetron co-sputtering device
TW200725729A (en) Plasma etching system