CN107424943A - The manufacture device and manufacture method of electronic installation - Google Patents
The manufacture device and manufacture method of electronic installation Download PDFInfo
- Publication number
- CN107424943A CN107424943A CN201710366163.5A CN201710366163A CN107424943A CN 107424943 A CN107424943 A CN 107424943A CN 201710366163 A CN201710366163 A CN 201710366163A CN 107424943 A CN107424943 A CN 107424943A
- Authority
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- China
- Prior art keywords
- target
- rotary body
- deposited material
- substrate
- target portion
- Prior art date
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- Granted
Links
- 238000009434 installation Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000151 deposition Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 106
- 239000013256 coordination polymer Substances 0.000 description 28
- 238000006073 displacement reaction Methods 0.000 description 25
- 238000004804 winding Methods 0.000 description 25
- 238000005452 bending Methods 0.000 description 23
- 239000013078 crystal Substances 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 17
- 101150016835 CPL1 gene Proteins 0.000 description 16
- 101100468774 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RIM13 gene Proteins 0.000 description 16
- 239000010409 thin film Substances 0.000 description 14
- 101100221835 Arabidopsis thaliana CPL2 gene Proteins 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 238000003466 welding Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of manufacture device and manufacture method of electronic installation.The manufacture device of electronic installation includes:Platform, for supporting substrate;Target rotary body, it is arranged on the substrate, and extends along a direction, and the first deposited material and the second deposited material different from each other is provided to the substrate;Chamber, house the platform and the target rotary body.The target rotary body includes:First target portion, positioned at the one along the target rotary body to the first area of extension, and supply first deposited material;Second target portion, it is connected with the first target portion, positioned at the second area adjacent with the first area of the target rotary body, and supplies second deposited material.
Description
Technical field
The present invention relates to a kind of manufacture device of electronic installation and manufacture method.
Background technology
In the recent period, it is widely used based on ambulant electronic installation.As movement electronic installation, except mobile phone etc.
Beyond miniaturized electronics, also widely used tablet personal computer (Tablet PC) recently.
Mobile electronic equipment as described above by image or regards to support various function comprising display device
The visual informations such as frequency are supplied to user.With the miniaturization of the miscellaneous part for driving display device, display device is in electronics
Shared ratio tends to gradually increase in device.Especially, in the recent period with electronic installation design variation, flexible display apparatus
And the necessity of the manufacture device for manufacturing flexible display apparatus is increasing.
The content of the invention
It is an object of the invention to provide a kind of electronic installation for the conductive pattern being improved comprising flexural property.
A further object of the present invention is the manufacture device for providing following electronic installation:One is utilized in a chamber
Target rotary body and being formed has multiple layers of the conductive pattern comprising mutually different deposited material.
It can be included according to the manufacture device of the electronic installation of one embodiment of the invention:Platform, for supporting substrate;Target
Rotary body, it is arranged on the substrate;Chamber, house the platform and the target rotary body.
The target rotary body can include the first target portion and the second target portion.First target portion, which can be located at along the target, to rotate
The one of body supplies first deposited material to the first area of extension.Second target portion can be with first target
Portion connects, and is located at the second area adjacent with the first area of the target rotary body, and supplies second deposit
Matter.
First deposited material and second deposited material can be as the target rotary body be with along described one
It is supplied under multiple patterns that the rotary shaft of direction extension is pivoted about and is defined.
The multiple pattern can include:First mode, the first target portion faces the substrate, and described first is heavy
Product material is provided to the substrate;Second mode, the second target portion face the substrate, and second deposited material
It is provided to the substrate.
The multiple pattern can also include:3rd pattern, the part in the first target portion and the second target portion
A part faces the substrate simultaneously.Under the 3rd pattern, a part of of the first target portion can sink described first
Product material is provided onto the substrate, and the part in the second target portion provides second deposited material to the base
On plate.
The rotary speed of the target rotary body in the first mode and in the second mode the target rotation
The rotary speed of swivel can be with different from each other or mutually the same.
The target rotary body can be with the offer of the drum of lateral surface and medial surface.
The manufacture device of the electronic installation can include:It is contained in what is defined by the medial surface of the target rotary body
The magnet of inner space.The magnet can be surrounded and arranged by the target rotary body.The magnet can be located at the target and revolve
The region adjacent with the substrate in the medial surface of swivel.The magnet can centered on the rotary shaft and along
The medial surface of the target rotary body and rotate.
The manufacture device of the electronic installation can also include rotary driving part and fixed part.The rotary driving part can be with
The target rotary body is set to be pivoted about with the rotary shaft.The fixed part can be arranged in the rotary driving part and
Between the chamber, and the rotary driving part and the target rotary body are fixed on the chamber.The rotary driving part can
Be connected to by the lateral surface of the target rotary body and the medial surface connection a sidepiece and with the side
Portion to the other side.
The target rotary body can also include the 3rd target portion, and the 3rd target site is in the first target portion and described second
Between target portion, and correspond to threeth region adjacent with the first area of the target rotary body and the second area,
And the 3rd deposited material can be supplied.
The target rotary body may be provided in it is multiple, and the target rotary body can be separated by preset space length and abreast
Arrangement.
It can be included according to the electronic installation of one embodiment of the invention:Flexible base board comprising bending section;It is and conductive
Pattern, it is provided at least partially on the bending section.
The conductive pattern can include:First conductive pattern layer, including the first deposited material;Second conductive pattern layer,
It is provided in first conductive pattern layer, and including second deposit different from first deposited material
Matter;And mixed layer, it is provided between first conductive pattern layer and second conductive pattern layer, and include described
One deposited material and second deposited material.
The ratio between thickness of the thickness of the mixed layer and the conductive pattern can be more than 0 and less than 0.05.
The conductive pattern can include:Sensing electrode, including each other with preset space length is separated by and arrange first sensing
Electrode and the second sensing electrode.
The flexible base board includes thin-film component layer, display element layer, thin-film encapsulation layer, and the conductive pattern can be arranged
In in the thin-film encapsulation layer.
The present invention can provide the electronic installation being improved according to the flexural property of an embodiment.
Process time can be shortened according to the manufacture device of the electronic installation of one embodiment of the invention.
Brief description of the drawings
Fig. 1 a, Fig. 1 b and Fig. 1 c are the schematical stereograms according to the electronic installation of one embodiment of the invention.
Fig. 2 a correspond to a profile of the schematical conductive pattern of Fig. 1 a I-I' lines.
Fig. 2 b are a profiles of the conductive pattern for amplifying Fig. 2 a AA' and showing.
Fig. 3 is the schematical stereogram according to the electronic installation of one embodiment of the invention.
Fig. 4 is the profile of the pixel included in the electronic installation according to one embodiment of the invention.
Fig. 5 is the plane for schematically showing the touch panel included in the electronic installation of one embodiment of the invention
Figure.
Fig. 6 is the schematic diagram according to the manufacture device of the electronic installation of one embodiment of the invention.
Fig. 7 is the stereogram according to the target rotary body of one embodiment of the invention.
Fig. 8 a and Fig. 8 b are the schematical profiles of target rotary body.
Fig. 9 a and Fig. 9 b are the profiles according to the target rotary body of one embodiment of the invention.
Figure 10 a to Figure 10 d are cutd open according to schematical the one of the manufacture device of the electronic installation of one embodiment of the invention
Face figure.
Figure 11 is the profile of target rotary body according to another embodiment of the present invention.
Figure 12 is a schematical profile for the manufacture device of electronic installation according to another embodiment of the present invention.
Symbol description
FB:Flexible base board CP:Conductive pattern
TSP:Touch panel DP:Flexible display panels
1000:Chamber RT:Target rotary body
T1:First target portion T2:Second target portion
M1:First deposited material M2:Second deposited material
SR:Feed region DE:Deposition region
Embodiment
The present invention can implement various conversion, and can have a variety of embodiments, be shown in the drawings below specific
Embodiment, and be described in detail herein.But its purpose and not lying in limit the invention to it is specific open
Form, it should be appreciated that the present invention comprising the present invention thought and technical scope included all conversion, equivalent
And substitute.
It should be appreciated that in the application, the term such as " including (including) " or " having " is served only for specifying to be remembered in specification
The feature of load, numeral, step, operation, the presence of inscape, part or combinations thereof, and and non-predetermined discharge one or
More than one other features or numeral, step, operation, inscape, part or their compositions presence or it is additional can
Can property.In addition, when mentioning the components such as layer, film, region, plate and being located at another component " on (top) ", this not only includes being located at
The situation of another component " immediately above ", in addition to the situation of another component is provided among it.On the contrary, when mention layer, film, region,
When the components such as plate are located at another component " under (lower section) ", this not only includes the situation positioned at another component " immediately below ", also wraps
Include the situation for being provided with another component among it.
When being illustrated to accompanying drawing, similar reference numeral has been used for being similarly comprised key element.In the accompanying drawings, tie
The size of structure thing is to compare the size shown in actual amplification in order to ensure the definition of the present invention." first ", " second " etc.
Term be used to describe various inscape, but such inscape should not be limited by terms above.Above art
Language is only used for distinguishing an inscape with another inscape.For example, before the interest field of the present invention is not departed from
Put, the first inscape can be named as the second inscape, and similarly, the second inscape can also be named as
One inscape.Odd number is expressed in the statement for not having to include plural number on the premise of other clear and definite implications on context.
Hereinafter, embodiments of the invention are described in detail referring to the drawings.
Fig. 1 a, Fig. 1 b, Fig. 1 c are the schematical stereograms according to the electronic installation of one embodiment of the invention.
Reference picture 1a, Fig. 1 b and Fig. 1 c, flexibility can be included according to the electronic installation 10 of one embodiment of the invention
(flexible) substrate FB and conductive pattern CP.Conductive pattern CP can DR1 be laminated along a first direction on flexible base board FB.
As long as flexible base board FB is typically used, it is not particularly limited, it can include plastics, You Jigao
Molecule etc..The organic polymer for forming flexible base board FB can be PET (PET:Polyethylene
Terephthalate), PEN (PEN:Polyethylene naphthalate), polyimides
(Polyimide), polyether sulfone (Polyethersulfone) etc..
Can in the first pattern or second mode is operated according to the electronic installation 10 of one embodiment of the invention.It is flexible
Substrate FB can include the bending section BF and un-flexed portion NBF along second direction DR2 extensions.Bending section BF is under the second mode
It is bent on the basis of the bending axis BX extended along second direction DR2, and can be unfolded in the flrst mode.
Bending section BF is connected with un-flexed portion NBF.Un-flexed portion NBF will not occur curved under first mode and second mode
It is bent.Conductive pattern CP extends along the third direction DR3 intersected with second direction DR2.Conductive pattern CP at least a portion quilt
There is provided on the BF of bending section." bending " can represent that flexible base board FB etc. is bent to the situation of specific modality by external force.
Reference picture 1a, in the flrst mode, the bending section BF of electronic installation 10 can be unfolded.Reference picture 1b, second
Under pattern, flexible base board FB and conductive pattern CP at least a portion can be bent (bending).
Second mode includes the first beam mode and the second beam mode.Reference picture 1b, according to one embodiment of the invention
Electronic installation 10 can be bent under the first beam mode on the basis of bending axis BX along a direction.Electronic installation 10
Can be by the product of interior lateral bend under the first beam mode.Hereinafter, by electronic installation 10 on the basis of bending axis BX and by
It is during bending, be bent and the distance between conductive pattern CP toward each other is less than and is bent and flexible base board toward each other
The distance between FB situation is defined as interior lateral bend (inner bending).When by interior lateral bend, bending section BF can have
There is first curvature radius R1.
Reference picture 1c, can be with bending axis under the second beam mode according to the electronic installation 10 of one embodiment of the invention
Bent on the basis of BX with the direction in opposite direction with the bending in Fig. 1 b.Electronic installation 10 can be with the second beam mode
It is by the product of outer lateral bend.Hereinafter, it is when electronic installation 10 is bent on the basis of bending axis BX, be bent and each other
The distance between opposite flexible base board FB, which is less than, to be bent and the distance between conductive pattern CP toward each other situation is determined
Justice is outer lateral bend (outer bending).When by outer lateral bend, bending section BF can have second curvature radius R2.The
Two radius of curvature R 2 can be identical with first curvature radius R1, can also be different from first curvature radius R1.
In Fig. 1 b and Fig. 1 c, when electronic installation 10 is bent on the basis of bending axis BX, be bent and phase each other
To the constant situation of the distance between flexible base board FB shown as example, but be not limited to that this, is bent and that
The distance between this opposite flexible base board FB can be with non-constant.In addition, in Fig. 1 b and Fig. 1 c, by electronic installation 10 with bending
When being bent on the basis of axle BX, it is bent and the mutually the same situation of the area of flexible base board FB toward each other is as example
And show, but be not limited to that this, is bent and the area of flexible base board FB toward each other can be with different from each other.
Fig. 2 a correspond to a profile of the schematical conductive pattern of Fig. 1 a I-I' lines, and Fig. 2 b are by Fig. 2 a
AA' amplifications and the profile of conductive pattern that shows.
Reference picture 1a to Fig. 1 c, Fig. 2 a and Fig. 2 b, conductive pattern CP at least a portion can be provided in bending section BF
On.Conductive pattern CP has multiple crystal grain (grain).Crystal grain GR can be defined as regularly arranging component atoms etc. and
The crystal grain of manufacture.Crystal grain GR can have the grain size (grain of about 10 nanometers (nm) to about 100 nanometers (nm)
size)。
As long as conductive pattern CP is typically used, it is not particularly limited, for example, metal, gold can be included
At least one of alloy and transparent conductive oxides (Transparent conducting oxide) of category.Crystal grain GR
Can be at least one of crystal grain of the crystal grain of metal, the crystal grain of alloy and transparent conductive oxides.
As long as metal is typically used, be not particularly limited, for example, it may be comprising Al, Cu, Ti, Mo,
At least one of Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr metal.
As long as transparent conductive oxides are typically used, it is not particularly limited, for example, it may be comprising
Indium tin oxide (ITO:Indium tin oxide), indium-zinc oxide (IZO:Indium zinc oxide), zinc (ZnO:
Zinc oxide) and indium tin zinc oxide (ITZO:Indium tin zinc oxide) at least one of electrically conducting transparent
Property oxide.
Conductive pattern CP can include multiple conductive pattern layer CPL of DR1 stackings along a first direction.Conductive pattern CP examples
More than two conductive pattern layer CPL can also such as be included.
In one embodiment of this invention, conductive pattern CP can include the first conductive pattern layer CPL1 and the second conductive pattern
Pattern layer CPL2.Second conductive pattern layer CPL2 can be provided on the first conductive pattern layer CPL1.
First conductive pattern layer CPL1 and the second conductive pattern layer CPL2 can be made up of material different from each other respectively.The
One conductive pattern layer CPL1 and the second respective thickness of conductive pattern layer CPL2 can be with mutually the same, can also be different from each other.Example
Such as, the first conductive pattern layer CPL1 can include Al, and the second conductive pattern layer CPL2 can include Ti.
The the first crystal grain GR1 and second being separately contained in the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2
Crystal grain GR2 is not connected to each other.That is, the first crystal grain GR1 and the second crystal grain GR2 can be led in the first conductive pattern layer CPL1 and second
Boundary between electrograph pattern layer CPL2 is mixed with each other and is arranged.Hereinafter, will be led in the first conductive pattern layer CPL1 and second
Boundary between electrograph pattern layer CPL2 is mixed with the first crystal grain GR1 and the second crystal grain GR2 layer is defined as mixed layer CPLM.
Mixed layer CPLM is the process that the second conductive pattern layer CPL2 is continuously formed on the first conductive pattern layer CPL1
In the first crystal grain GR1 and the second crystal grain GR2 part mixing layer.Mixed layer CPLM thickness can be relative to conductive pattern CP's
Thickness is provided with being approximately greater than the ratio of 0 and less than 0.05.
Fig. 3 is the schematical stereogram according to the electronic installation of one embodiment of the invention.
Reference picture 3, touch panel TSP and flexibility can be included according to the electronic installation 100 of one embodiment of the invention
Display panel DP.Touch panel TSP can DR1 be laminated along a first direction on flexible display panels DP.As hereinbefore
Mention, can in the first pattern or second mode is operated according to the electronic installation 100 of one embodiment of the invention.
At least one in the flexible display panels DP and touch panel TSP can include conductive pattern CP.It is conductive
Pattern CP can include multiple conductive pattern layers.
Fig. 4 is the profile of the pixel included in the electronic installation according to one embodiment of the invention.
Hereinafter, flexible display panels DP is illustrated for the situation of organic electroluminescence display panel as example, still
Be not limited thereto, flexible display panels can be liquid crystal display panel (liquid crystal display panel), etc.
Gas ions display panel (plasma display panel), electrophoretic display panel (electrophoretic display
Panel), MEMS (MEMS) display panel (microelectromechanical system display panel)
And Electrowetting display panel (electrowetting display panel) etc..
Reference picture 1a to Fig. 1 c, Fig. 4, flexible display panels DP can include flexible base board FB1 and be provided in flexible base board
Conductive pattern CP on FB1.
Reference picture 4, a flexible display panels DP pixel can include the film for being used for driving organic illuminating element OEL
Transistor (TFT).In one embodiment of this invention, it is illustrated that and illustrate comprising a thin film transistor (TFT) in one pixel
(TFT), but be not limited to that this, can include multiple thin film transistor (TFT)s in one pixel.
Thin film transistor (TFT) (TFT) includes:Coordination electrode CE, receive control signal;Input electrode IE, receive data-signal;
Semiconductor pattern SM, data-signal is passed into output electrode OE in response to control signal;And output electrode OE, export number
It is believed that number.
First electrode EL1 is connected with the output electrode OE of thin film transistor (TFT) (TFT).Second electrode EL2 is applied in common electricity
Pressure, and organic illuminating element OEL luminescent layer EML can launch light according to the output signal of thin film transistor (TFT) (TFT), according to
This provides image.Hereinafter more specifically described for first electrode EL1 and second electrode EL2.
Flexible display panels DP can be included:Thin-film component layer TEL, include thin film transistor (TFT) (TFT);Display element layer
DEL, there is provided on thin-film component layer TEL, and include organic illuminating element OEL;And encapsulated layer SL, there is provided in display element layer
On DEL.
Semiconductor pattern SM can be provided with flexible base board FB1, semiconductor pattern SM is formed by semi-conducting material, and
And it can be worked as thin film transistor (TFT) TFT active layer.Semiconductor pattern SM include input area IA, output area OA,
The groove CA being provided between input area IA and output area OA.Semiconductor pattern SM can select inorganic semiconductor or have
Machine semiconductor and formed.Input area IA and output area OA can be miscellaneous by adulterating p-type impurity or p-type in a semiconductor material
Matter and formed.
The first insulating barrier IL1 is provided with semiconductor pattern SM.First insulating barrier IL1 can cover semiconductor pattern SM.
First insulating barrier IL1 can be made up of organic insulation substrate or inorganic insulation thing.
Coordination electrode CE is provided with the first insulating barrier IL1.Coordination electrode CE, which can be formed as covering corresponding to, partly to be led
Body pattern SM groove CA region.Coordination electrode CE can include multiple layers.
The second insulating barrier IL2 can be provided with coordination electrode CE and the first insulating barrier IL1.Second insulating barrier IL2 covers
Lid coordination electrode CE.Second insulating barrier IL2 can be made up of organic insulation substrate or inorganic insulation thing.
Input electrode IE and output electrode OE can be provided with the second insulating barrier IL2.Output electrode OE can be by
Be formed at the first insulating barrier IL1 and the second insulating barrier IL2 the first connecting hole CH1 and with semiconductor pattern SM output area OA
Contact, and input electrode IE by the second connecting hole CH2 for being formed at the first insulating barrier IL1 and the second insulating barrier IL2 and with
Semiconductor pattern SM input area IA contacts.Input electrode IE and output electrode OE can include multiple layers.
Passivation layer (passivation layer) PL, passivation layer PL is provided with input electrode IE and output electrode OE
The function of the diaphragm of protective film transistor (TFT) can be performed, can also carry out the flat of surface planarisation thereon
Change the function of film.
First electrode EL1 is provided with passivation layer PL.First electrode EL1 for example can be positive pole.First electrode EL1 can
To be connected to thin film transistor (TFT) TFT output electrode DE by being formed at passivation layer PL the 3rd connecting hole CH3.
The pixel definition film PDL for dividing luminescent layer EML is provided with passivation layer PL.Pixel definition film PDL is used for
Exposure first electrode EL1 upper surface.Organic illuminating element OEL is provided in the region surrounded by pixel definition film PDL.Organic hair
Optical element OEL includes first electrode EL1, cavity conveying region HTR, luminescent layer EML, electron transport region ETR and second electrode
EL2。
First electrode EL1 is conductive.First electrode EL1 can be pixel electrode or positive pole.First electrode EL1 can be with
Include multiple layers.First electrode EL1 can be transmission-type electrode, Semitransmissive electrode or reflective electrode.
Organic layer can be disposed with first electrode EL1.Organic layer includes luminescent layer EML.Organic layer can also include
Cavity conveying region HTR and electron transport region ETR.
Cavity conveying region HTR is provided on first electrode EL1.Cavity conveying region HTR can include hole and inject
At least one of layer, hole transporting layer, cushion, electronic barrier layer.
Cavity conveying region HTR can have the single layer structure being made up of single substance, by multiple materials different from each other
The single layer structure of composition or the sandwich construction with multiple layers being made up of multiple materials different from each other.
Luminescent layer EML is provided on the HTR of cavity conveying region.Luminescent layer EML can have the list being made up of single substance
Rotating fields, the single layer structure being made up of multiple materials different from each other or by multiple materials different from each other form have it is more
The sandwich construction of individual layer.
As long as material usually used luminescent layer EML, is not particularly limited, for example, can be by sending red
Light, green light, the material of blue light form, and can include fluorescent material or phosphorus.In addition, luminescent layer EML can be wrapped
Containing main body (host) and dopant.
Electron transport region ETR is provided on luminescent layer EML.Electron transport region can include hole blocking layer, electronics
At least one of transfer layer, electron injecting layer, but be not limited to that this.
Second electrode EL2 is provided on the ETR of electron transport region.Second electrode EL2 can be common electrode or negative pole.The
Two electrode EL2 can include multiple layers.Second electrode EL2 can be transmission-type electrode, Semitransmissive electrode or reflective electrode.
In the case where organic illuminating element OEL is positive surface-emitting type, first electrode EL1 can be reflective electrode, and
And second electrode EL2 can be transmission-type electrode or Semitransmissive electrode.In the feelings that organic illuminating element OEL is back side illuminated type
Under condition, first electrode EL1 can be transmission-type electrode or Semitransmissive electrode, and second electrode EL2 can be reflection-type electricity
Pole.
In organic illuminating element OEL, as first electrode EL1 and second electrode EL2 are applied in voltage respectively, from first
Electrode EL1 injected holes (hole) is moved to luminescent layer by cavity conveying region HTR, and from second electrode EL2
Injected electrons is moved to luminescent layer EML via electron transport region ETR.Electronics and hole luminescent layer EML in conjunction with
And exciton (exciton) is generated, and exciton drops to ground state from excitation state and lighted.
Encapsulated layer SL is provided with second electrode EL2.Encapsulated layer SL covering second electrodes EL2.Encapsulated layer SL can be wrapped
Containing at least one of organic layer and inorganic layer layer.Encapsulated layer SL for example can be thin-film encapsulation layer.Encapsulated layer SL is used to protect
Organic illuminating element OEL.
In the electronic installation 100 according to one embodiment of the invention, coordination electrode CE, input electrode IE, output electrode
In OE, first electrode EL1, second electrode EL2 at least some can be the conductive pattern CP for being illustrated in Fig. 2 a.That is, control
In electrode CE, input electrode IE, output electrode OE, first electrode EL1, second electrode EL2 at least some can include
The first conductive pattern layer comprising multiple first crystal grain and the second conductive pattern layer comprising the second crystal grain.
Fig. 5 is the plane for schematically showing the touch panel included in the electronic installation of one embodiment of the invention
Figure.
Reference picture 1a to Fig. 1 c, Fig. 3 are provided on flexible display panels DP to Fig. 5, touch panel TSP.Touch-screen
Panel TSP can be provided on encapsulated layer (Fig. 4 SL).Touch panel TSP can identify the direct touch of user, user
Indirect touch, the direct touch of object or the indirect touch of object.
In the event of directly touching or touch indirectly, then for example in the first sensing electrode Tx included by sensing electrode TE and
The change of electric capacity occurs between second sensing electrode Rx.With capacitance variations, the sensing for being applied to the first sensing electrode Tx is believed
Number it can postpone and provide to the second sensing electrode Rx.Touch panel TSP can detect to touch from the length of delay of sensing signal
Touch coordinate.
For the touch panel TSP according to one embodiment of the invention, although the situation that will be driven in a capacitive manner
It is illustrated as example, but be not limited to that this, touch panel TSP can also be driven in a manner of resistive film
It is dynamic.In addition, touch panel TSP can be by from a manner of holding sensing (self cap) or in mutual tolerance sensing (Mutual cap) mode
Any one mode driven.
Touch panel TSP can include the conductive pattern CP being provided on flexible display panels DP.Conductive pattern CP can
To include the sensing electrode TE described in hereafter, the first bridge BD1, the second bridge BD2, the first connection winding displacement TL1, the second connection winding displacement
TL2, first are fanned out to winding displacement PO1 and second and are fanned out to winding displacement PO2.
Sensing electrode TE is provided on encapsulated layer SL.Even though it is not illustrated, still sensing electrode TE and encapsulated layer SL it
Between can also be provided with independent flexible base board.Sensing electrode TE can include multiple layers.
Sensing electrode TE includes the first sensing electrode Tx and the second sensing electrode Rx.The sensings of first sensing electrode Tx and second
Electrode Rx is electrically insulated from each other respectively.First sensing electrode Tx and the second sensing electrode Rx generally have respectively rhombus, square,
Rectangle, circle or non-normal shape (for example, shape that the branch such as dendron (dendrite) structure is interweaved) etc. are various
Shape.First sensing electrode Tx and the second sensing electrode Rx can have mesh form respectively.
Reference picture 5, the first sensing electrode Tx and the second sensing electrode Rx may be provided on mutually the same layer.First
Sensing electrode Tx and the second sensing electrode Rx can be respectively provided on encapsulated layer SL.First sensing electrode Tx can be along
Two direction DR2 and third direction DR3 are provided with being separated by.The first sensing electrode Tx being separated by along second direction DR2 can be by
First bridge BD1 and connect.First bridge BD1 can be made up of multiple layers.
Second sensing electrode Rx can be provided with being separated by along second direction DR2 and third direction DR3.Along third direction
The second sensing electrode Rx that DR3 is separated by can connect by the second bridge BD2.Second bridge BD2 may be provided in the first bridge BD1
On.Second bridge BD2 can be made up of multiple layers.Although not shown, can be provided between the second bridge BD2 and the first bridge BD1
Insulating barrier.
Connection winding displacement TL1, TL2 electrically connect with sensing electrode TE.Connection winding displacement TL1, TL2 can be made up of multiple layers.
Connect winding displacement TL1, TL2 and include the first connection winding displacement TL1 and the second connection winding displacement TL2.First connection winding displacement TL1 can
It is connected with being fanned out to winding displacement PO1 with the first sensing electrode Tx and first.Second connection winding displacement TL2 can with the second sensing electrode Rx and
Second is fanned out to winding displacement PO2 connections.
It is fanned out to winding displacement PO1, PO2 and is connected with being connected winding displacement TL1, TL2 and welding disk PD1, PD2.Being fanned out to winding displacement PO1, PO2 can
It is made up of multiple layers.It is fanned out to winding displacement PO1, PO2 and is fanned out to winding displacement PO1 and second comprising first and is fanned out to winding displacement PO2.First is fanned out to winding displacement
PO1 is connected winding displacement TL1 and the first welding disk PD1 connections with first.Second is fanned out to winding displacement PO2 is connected winding displacement TL2 and with second
Two welding disk PD2 connections.
Welding disk PD1, PD2 electrically connect with sensing electrode TE.Welding disk PD1, PD2 can be made up of multiple layers.Welding disk
PD1, PD2 include the first welding disk PD1 and the second welding disk PD2.First welding disk PD1 is fanned out to winding displacement PO1 with first and is connected.The
One welding disk PD1 can electrically connect with the first sensing electrode Tx.Second welding disk PD2 is fanned out to winding displacement PO2 with second and is connected.Second
Welding disk PD2 can electrically connect with the second sensing electrode Rx.
In one embodiment of this invention, show that the first sensing electrode Tx and the second sensing electrode Rx are provided to each other
Situation on identical layer, but the invention is not limited in this, the first sensing electrode Tx and the second sensing electrode Rx can be with
It is provided on layer different from each other.For example, the first sensing electrode Tx can be provided on encapsulated layer SL, and in the first sense
Insulating barrier can be provided with by surveying on electrode Tx.Second sensing electrode Rx can be provided on insulating barrier.
Hereinafter, referring to the drawings and to the electronic installation system for being used to manufacture electronic installation 10 according to one embodiment of the invention
Device is made to illustrate.Hereinafter, for convenience of description, identical accompanying drawing is used for the inscape above having been described above
Label, and omit the explanation of the repetition for above-mentioned inscape.
Fig. 6 is according to the schematic diagram of the manufacture device of the electronic installation of one embodiment of the invention, and Fig. 7 is according to the present invention
An embodiment target rotary body stereogram.
Reference picture 1a to Fig. 1 c, Fig. 6 and Fig. 7, can be with according to the manufacture device of the electronic installation of one embodiment of the invention
Include chamber 1000, platform ST, target rotary body RT, rotary driving part RP and fixed part FP.
In one embodiment of this invention, it is used to form conductive pattern CP in chamber 1000 and arrives flexible base board FB
On depositing operation.Chamber 1000 houses platform ST, target rotary body RT, rotary driving part RP, fixed part FP.
Flexible base board FB can be provided on platform ST.Platform ST can be fixed and be supported flexible base board FB.
Target rotary body RT is disposed with the platform ST for being disposed with flexible base board FB.Target rotary body RT can be from flexible base board
FB is separated by preset space length and arranged.Target rotary body RT can supply deposited material to flexible base board FB.
Reference picture 7, target rotary body RT can have the cylindrical shape extended along third direction DR3.Target rotary body RT can
To be pivoted about with the rotary shaft RX extended along third direction DR3.
Target rotary body RT can be included along the main part BP of third direction DR3 extensions and perpendicular to third direction DR3 simultaneously
It is connected to main part BP sidepiece SP.Target rotary body RT sidepiece SP is separated by the main body with extending along third direction DR3
The suitable distance of length and toward each other.
Main part BP outer surface can be divided into the first area AR1 that extends along third direction DR3 and with
Second area AR2 adjacent first area AR1.There is provided each other not from target rotary body RT first area AR1 and second area AR2
Same deposited material.That is, target rotary body RT main part BP can include:First target portion T1, corresponding to first area AR1, and
And provide the first deposited material;Second target portion T2, corresponding to second area, and provide second different from the first deposited material M1
Deposited material M2.In the present embodiment, the situation of second area AR2 area of the area more than first area AR1 is shown, but
It is not limited thereto, first area AR1 and second area AR2 area ratio can become different according to demand.
Rotary driving part RP is connected to target rotary body RT sidepiece so that target rotary body RT using rotary shaft RX in
The heart is rotated.Rotary driving part RP can adjust target rotary body RT rotary speed.
Fixed part FP is arranged between rotary driving part RP and chamber 1000, and can be revolved rotary driving part RP and target
Swivel RT is fixed on chamber 1000.
Fig. 8 a and Fig. 8 b are the schematical profiles of target rotary body.
Reference picture 7, Fig. 8 a and Fig. 8 b, target rotary body RT may be provided with the cylindrical shape of predetermined inner space
Shape.Target rotary body RT main part BP can have the lateral surface OS that exposes to outside and with lateral surface OS to and define in advance
The medial surface IS of fixed inner space.
The first deposited material M1 can be disposed with the first target portion T1 lateral surface OS, and in the second target portion T2 outside
Face OS can be disposed with the second deposited material M2.Although not shown, the first deposited material M1 can note from predetermined inner space
Enter to the first target portion T1, and the second deposited material M2 can be injected into the second target portion T2 from predetermined inner space.
In one embodiment of this invention, multiple magnet MG can be provided in predetermined inner space.Multiple magnet MG
It can extend respectively along third direction DR3.
If observing the section of the target rotary body RT parallel to the plane defined by first direction DR1 and second direction DR2,
Magnet MG can from target rotary body RT rotary shaft RX via center deviation and be partial in a medial surface IS part and
Arranged.
A part of in magnet MG can have polarity different from each other.In Fig. 8 a and Fig. 8 b, it will be disposed with that
Two magnet MG1 of this identical polarity and it is arranged between two magnets and one with the polarity different from two magnets
Magnet MG2 situation is shown as example, but the quantity of magnet is not limited thereto, can be provided with two with
On.In addition, at least one magnet can have the polarity different from some magnet in remaining magnet.
The ion generated by the plasma gas flow into chamber 1000 is applied in target rotary body RT electricity
Press and accelerate, and sputter deposited material.It can be formed from the charge particle M1-P of deposited material sputtering along because of magnet MG
Magnetic line of force MF and be captured.Accordingly, it is possible to achieve to flexible base board FB specific position concentrative implementation depositing operation.
Fig. 9 a and Fig. 9 b are the profiles according to the target rotary body of one embodiment of the invention.
Reference picture 9a, with target rotary body RT centered on rotary shaft RX (reference picture 7) clockwise or the inverse time
Pin direction rotates, and the first target portion T1 and the second target portion T2 position may change.Now, magnet MG position can fix and
It is not changed.
Reference picture 9b, target rotary body RT position is fixed, and magnet MG can be moved and be changed its position.Magnet MG can
To be rotated clockwise or counterclockwise using rotary shaft RX as center along target rotary body RT medial surface IS.Now,
It can realize as magnet MG is mobile and adjusts the direction for providing deposited material.However, it is not limited to this, magnet MG can be with
Change its position during target rotary body RT is moved.
Figure 10 a to Figure 10 d are according to a schematical profile for the manufacture device of the electronic installation of the present invention, are signals
Property show to form the figure of conductive pattern CP method on flexible base board FB.
In Figure 10 a to Figure 10 d, the feed region SR from target rotary body RT supply deposited materials has been illustrated by way of example
And the flexible base board FB deposited from the deposited material of feed region SR supplies deposition region ER.When mentioning from target rotary body RT
When the deposited material of supply is with radial provide to flexible base board FB, feed region SR can be defined within target rotary body RT
An opposite part with flexible base board FB.Deposition region ER can determine according to feed region SR area, and crystallizing field
Domain ER can be a flexible base board FB part either flexible base board FB entire surface.
First deposited material M1 and the second deposited material M2 can be entered with target rotary body RT centered on rotary shaft RX
Supplied in multiple patterns that row rotates and is defined.Figure 10 a show that the first target portion T1 and flexible base board FB are opposite and the
One deposited material M1 is provided to flexible base board FB first mode, and Figure 10 c show the second target portion T2 and flexible base board FB phases
To and the second deposited material M2 be provided to flexible base board FB second mode.Figure 10 b show the first target portion T1 a part and
A second target portion T2 part is simultaneously opposite with flexible base board FB and the first deposited material M1 and the second deposited material M2 are supplied
To flexible base board FB the 3rd pattern.Hereinafter, in Figure 10 a to Figure 10 c, schematically illustrate as time goes by and with
First mode, the 3rd pattern, the embodiment of the order change pattern of second mode illustrate.
Under first mode, second mode, the 3rd pattern, target rotary body RT rotary speed can be with different from each other.But
Be not limited thereto, under first mode, second mode, the 3rd pattern, target rotary body RT rotary speed can with mutually the same,
Or can be only different under some pattern in first mode, second mode, the 3rd pattern.
Reference picture 10a, in the flrst mode, the first target portion T1 can provide the first deposited material on flexible base board FB
M1.As a result, as shown in fig. lob, the first conductive pattern layer for including the first deposited material M1 is formed on flexible base board FB
CPL1。
After the first conductive pattern layer CPL1 is formed, target rotary body RT is by being rotated clockwise or counterclockwise
Rotate and change into the 3rd pattern from first mode.
Now, a first target portion T1 part and a second target portion T2 part turn into feed region SR.With from first
A target portion T1 part the first deposited material M1 of supply, and the second deposited material M2 is supplied from a second target portion T2 part,
The first deposited material M1 and the second deposited material M2 can have been deposited on first conductive pattern layer CPL1 simultaneously.As a result, such as Figure 10 c
It is shown, formed mixed by the first deposited material M1 and the second deposited material M2 and formed mixed on the first conductive pattern layer CPL1
Close layer CPLM.Mixed layer CPLM is formed in a period of being defined in target rotary body RT rotations.
Reference picture 10c, target rotary body RT can be rotated and fade to second mode from the 3rd pattern.Second target portion T2 can be with
Second deposited material M2 is provided on mixed layer CPLM.As a result, as shown in fig. 10d, formed and included on mixed layer CPLM
Second deposited material M2 the second conductive pattern layer CPL2.
In conductive pattern CP, mixed layer CPLM thickness can be relative to conductive pattern CP integral thickness with about big
Ratio in 0 and less than 0.05 provides.
In the present embodiment, it is illustrated that and illustrate following situation:Second target portion T2 surface area is provided as being more than the
One target portion T1 surface area, therefore the second conductive pattern layer CPL2 forms thick than the first conductive pattern layer CPL1.But not
This is confined to, the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2 thickness can be according to demand and by changing the
One target portion T1 and the second target portion T2 surface area ratio and be adjusted.
In addition, target rotary body RT can be driven under each pattern in a manner of various.For example, target rotary body RT can be with
Continuously rotate under each pattern, or rotated after temporarily ceasing.In addition, under target rotary body RT each pattern
Rotary speed can be with constant, or can be changed according to the time.In addition, rotation sides of the target rotary body RT under each pattern
Can be a direction or both direction to can be different.
In addition, make target rotary body RT rotary speed become different under first mode, second mode, the 3rd pattern, from
And the first conductive pattern layer CPL1, mixed layer CPLM, the second conductive pattern layer CPL2 thickness can be made to be formed as different.
One can be utilized in a chamber 1000 according to the manufacture device of the electronic installation of one embodiment of the invention
Target rotary body RT and being formed has multiple layers of the conductive pattern CP comprising mutually different deposited material, therefore chamber can be reduced
Traveling time between room 1000, so as to shorten the process time.In addition, by being formed in a chamber 1000 with more
The conductive pattern CP of individual layer, it can prevent from forming metal oxide between multiple layers, accordingly, the bonding force between multiple layers becomes
Must be excellent, and the surface resistance characteristic between multiple layers can be improved.As a result, can provide one kind includes flexural property
The electronic installation 10,100 for the conductive pattern CP being improved.
Figure 11 is the profile of target rotary body according to another embodiment of the present invention.
Reference picture 11, the main part BP of target rotary body RT-1 according to another embodiment of the present invention can include:First
Target portion T1, corresponding to first area AR1 and provide the first deposited material M1;Second target portion T2, corresponding to second area AR2 and is carried
For the second deposited material M2;3rd target portion T3, corresponding to the 3rd region AR3 and provide the 3rd deposited material M3.3rd target portion T3
Can be between the first target portion T1 and the second target portion T2.3rd deposited material M3 can deposit with the first deposited material M1 and second
Material M2 is different, or can be identical with the first deposited material M1 or the second deposited material M2.In the present embodiment, it is illustrated that it is the
One target portion T1, the second target portion T2 and the 3rd target portion T3 area are mutually the same, but be not limited to that this, the first target portion T1,
Second target portion T2 and the 3rd target portion T3 area ratio can become different according to demand.
, can be in a chamber with the first deposited material to the 3rd deposited material M1, M2, M3 is provided from target rotary body RT-1
In room 1000 conductive pattern being made up of on flexible base board FB multiple floor is easily manufactured using a target rotary body RT-1
CP。
Figure 12 is a schematical profile for the manufacture device of electronic installation according to another embodiment of the present invention.
Reference picture 12, the manufacture device of electronic installation according to another embodiment of the present invention can include multiple targets and rotate
Body.In fig. 12, it is illustrated that the first target rotary body RT1 and the second target rotary body RT2 is on flexible base board FB each other between predetermined
Away from the situation for being separated by and arranging, but be not limited to that this, the quantity of target rotary body becomes according to flexible base board FB size
It is different.
From the first feed region SR1 of the first target rotary body RT1 supply deposited materials flexible base is deposited on deposited material
Plate FB the first deposition region ER1 is corresponding, and the second feed region SR2 of deposited material is supplied from the second target rotary body RT2
It is corresponding with the second deposition region ER2 that deposited material is deposited on flexible base board FB.First deposition region ER1 and the second deposition region
ER2 can be equivalent to flexible base board FB whole deposition region, and its area ratio can be with different from each other.
More than, it is illustrated on the basis of the preferred embodiments of the present invention, but in the art skilled
Technical staff or being appreciated that per capita for ABC with the art are not being departed from described in claims
In the range of the thought and technical field of the present invention, various revision and change can be realized to the present invention.
Therefore, technical scope of the invention is not limited to the content described in detailed description, but should pass through power
Scope in sharp claim and be determined.
Claims (10)
1. a kind of manufacture device of electronic installation, including:
Platform, for supporting substrate;
Target rotary body, it is arranged on the substrate, and extends along a direction, and different from each other first is provided to the substrate
Deposited material and the second deposited material;
Chamber, the platform and the target rotary body are housed, wherein,
The target rotary body includes:
First target portion, positioned at the one along the target rotary body to the first area of extension, and it is heavy to supply described first
Product material;
Second target portion, it is connected with the first target portion, positioned at secondth area adjacent with the first area of the target rotary body
Domain, and supply second deposited material.
2. the manufacture device of electronic installation as claimed in claim 1, wherein,
First deposited material and second deposited material are as the target rotary body is with along one to extension
Rotary shaft multiple patterns for pivoting about and being defined under be supplied, and the multiple pattern includes:
First mode, the first target portion faces the substrate, and first deposited material is provided to the substrate;
Second mode, the second target portion faces the substrate, and second deposited material is provided to the substrate.
3. the manufacture device of electronic installation as claimed in claim 2, wherein,
The multiple pattern also includes:3rd pattern, the part in the first target portion and the part in the second target portion are same
When face the substrate,
Under the 3rd pattern, the part in the first target portion provides first deposited material on the substrate,
And the part in the second target portion provides second deposited material on the substrate.
4. the manufacture device of electronic installation as claimed in claim 2, wherein,
The rotary speed of the target rotary body in the first mode and the target rotary body in the second mode
Rotary speed it is different from each other or mutually the same.
5. the manufacture device of electronic installation as claimed in claim 2, wherein,
The target rotary body is with the offer of the drum of lateral surface and medial surface.
6. the manufacture device of electronic installation as claimed in claim 5, wherein,
Including:The magnet of the inner space defined by the medial surface of the target rotary body is contained in, the magnet is described
Target rotary body surrounds.
7. the manufacture device of electronic installation as claimed in claim 6, wherein,
The magnet is located at the region adjacent with the substrate in the medial surface of the target rotary body.
8. the manufacture device of electronic installation as claimed in claim 7, wherein,
The magnet can be rotated centered on the rotary shaft along the medial surface of the target rotary body.
9. a kind of manufacture method of electronic installation, including the steps:
Substrate is provided on platform;
By the target rotary body extended along a direction arrangement on the substrate, wherein, the target rotary body includes being used to supply
First target portion of the first deposited material and the second target portion for supplying the second deposited material;And
Make the target rotary body to be pivoted about along one to the rotary shaft of extension, and it is heavy to deposit described first
Product material and second deposited material;
The step of depositing first deposited material and second deposited material includes the steps:
In a period of opposite in the first target portion and the substrate, first deposited material is fed on the substrate and
Form the first conductive pattern layer;
In a period of the part in the first target portion and the part in the second target portion and the substrate are opposite, by described in
First deposited material and second deposited material are fed on the substrate, so as to form mixed layer;And
In a period of opposite in the second target portion and the substrate, second deposited material is fed on the mixed layer
And form the second conductive pattern layer.
10. the manufacture method of electronic installation as claimed in claim 9, wherein,
First target site in along the one of the target rotary body to the first area of extension, the second target portion with
The first target portion connection, and it is located at the second area adjacent with the first area.
Applications Claiming Priority (2)
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KR10-2016-0063657 | 2016-05-24 | ||
KR1020160063657A KR20170132952A (en) | 2016-05-24 | 2016-05-24 | Electronic device and manufacturing device of the same, and method of manufacturing electronic device |
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CN107424943B CN107424943B (en) | 2023-06-09 |
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Cited By (1)
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CN107424943B (en) | 2023-06-09 |
KR20170132952A (en) | 2017-12-05 |
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