KR20170132952A - Electronic device and manufacturing device of the same, and method of manufacturing electronic device - Google Patents

Abstract

Provided is an electronic device including a conductive pattern with improved bending properties. A manufacturing device of the electronic device comprises: a stage for supporting a substrate; a target rotor arranged on the substrate, extended along one direction, and supplying different first and second deposition materials to the substrate; and a chamber for receiving the stage and the target rotor. The target rotor includes: a first target unit positioned in a first area extended along the one direction of the target rotor, and supplying the first deposition material; and a second target unit connected to the first target unit, positioned in a second area adjacent to the first area of the target rotor, and supplying the second deposition material.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device and a manufacturing method thereof, and a manufacturing method of the electronic device.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device and its manufacturing apparatus, and a manufacturing method of the electronic apparatus.

In recent years, electronic devices based on mobility have been widely used. In addition to small electronic devices such as mobile phones, tablet PCs are widely used as portable electronic devices.

Such a mobile electronic device includes a display device for providing a user with visual information such as an image or an image in order to support various functions. As other parts for driving the display device are miniaturized, the proportion of the display device in the electronic device is gradually increasing. Particularly, in recent years, as the design of electronic devices becomes more diverse, there is an increasing need for flexible display devices and devices for manufacturing the same.

It is an object of the present invention to provide an electronic device including a conductive pattern with improved bending characteristics.

It is still another object of the present invention to provide an apparatus for manufacturing an electronic device that forms a conductive pattern having a plurality of layers including different evaporation materials using one target rotating body in one chamber.

It is still another object of the present invention to provide a method of manufacturing an electronic device including a conductive pattern having improved bending characteristics by using an apparatus for manufacturing an electronic device.

An apparatus for manufacturing an electronic device according to an embodiment of the present invention may include a stage for supporting a substrate, a target rotating body disposed on the substrate, and a chamber for receiving the stage and the target rotating body.

The target rotating body may include a first target portion and a second target portion. The first target portion may be located in a first region extending along the one direction of the target rotating body and may supply the first deposition material. The second target portion may be connected to the first target portion and may be located in a second region adjacent to the first region of the target rotating body to supply the second deposition material.

The first deposition material and the second deposition material may be supplied in a plurality of modes in which the target rotating body is defined as rotating about an axis of rotation extending along the one direction.

Wherein the plurality of modes comprises a first mode in which the first target portion is facing the substrate and the first deposition material is supplied to the substrate and a second mode in which the second target portion is facing the substrate, And a second mode to be supplied.

The plurality of modes may further include a third mode in which a portion of the first target portion and a portion of the second target portion simultaneously face the substrate. In the third mode, a portion of the first target portion provides the first deposition material on the substrate, and a portion of the second target portion may provide the second deposition material on the substrate.

The rotation speed of the target rotating body in the one mode and the rotation speed of the target rotating body in the second mode may be different from or identical to each other.

 The target rotating body may be provided in a cylindrical shape having an outer side surface and an inner side surface.

The apparatus for manufacturing an electronic device may include a magnet received in an inner space defined by the inner surface of the target rotating body. The magnet may be disposed surrounded by the target rotating body. The magnet may be located in an area of the inner surface of the target rotating body that is adjacent to the substrate. The magnet is rotatable along the inner surface of the target rotating body about the rotation axis.

The apparatus for manufacturing an electronic device may further include a rotation driving unit and a fixing unit. The rotation driving unit may rotate the target rotating body about the rotation axis. The fixing portion may be disposed between the rotation driving portion and the chamber, and may fix the rotation driving portion and the target rotating body to the chamber. The rotation driving unit may be connected to one side portion connecting the outer side surface and the inner side surface of the target rotating body and the other side portion opposing the one side portion, respectively.

The target rotating body may further include a third target portion, wherein the third target portion is located between the first target portion and the second target portion, the first region of the target rotating body and the second region And the third deposition material can be supplied.

The target rotating bodies may be provided in a plurality of, and the target rotating bodies may be arranged in parallel at a predetermined interval.

An electronic device according to an embodiment of the present invention may include a flexible substrate including a bending portion and a conductive pattern provided on at least a portion of the bending portion.

The conductive pattern may include a first conductive pattern layer including a first deposition material, a second conductive pattern layer provided on the first conductive pattern layer and including the second deposition material different from the first deposition material, And a mixed layer provided between the first conductive pattern layer and the second conductive pattern layer and including the first deposition material and the second deposition material.

The thickness ratio of the mixed layer to the thickness of the conductive pattern may be more than 0 and less than 0.05.

The conductive pattern may include a sensing electrode including first sensing electrodes and second sensing electrodes spaced apart from each other by a predetermined distance.

The flexible substrate includes a thin film element layer, a display element layer, and a thin film sealing layer, and the conductive pattern may be disposed on the thin film sealing layer.

A method of manufacturing an electronic device according to an embodiment of the present invention includes the steps of providing a substrate on a stage, a first target portion supplying a first deposition material on the substrate, and a second target portion supplying a second deposition material Positioning a target rotating body extending in one direction, rotating the target rotating body about a rotational axis extending along the one direction, rotating the target rotating body about a rotational axis extending along the one direction, Forming a first conductive pattern layer by supplying the first deposition material on the substrate while the first deposition material and a portion of the second target portion face the substrate; Supplying the second deposition material onto the mixed layer while the second target portion is opposed to the substrate to form a mixed layer by supplying the second deposition material, And forming a conductive pattern layer.

Wherein the first target portion is located in a first region extending in the one direction of the target rotating body and the second target portion is connected to the first target portion and is located in a second region adjacent to the first region, can do.

It is possible to provide an electronic device with improved bending characteristics according to an embodiment of the present invention.

An apparatus for manufacturing an electronic device according to an embodiment of the present invention can shorten the processing time.

The method of manufacturing an electronic device according to an embodiment of the present invention can easily manufacture an electronic device including a conductive pattern having improved bending characteristics by using an apparatus for manufacturing an electronic device.

1A, 1B, and 1C are schematic perspective views of an electronic device according to an embodiment of the invention.
2A is a cross-sectional view of a schematic conductive pattern corresponding to line I-I 'in FIG. 1B.
2B is a cross-sectional view of a conductive pattern AA 'of FIG.
3 is a schematic perspective view of an electronic device according to an embodiment of the present invention.
4 is a cross-sectional view of one pixel included in an electronic device according to an embodiment of the present invention.
5 is a plan view schematically illustrating a touch screen panel included in an electronic device according to an embodiment of the present invention.
6 is a schematic view of an apparatus for manufacturing an electronic device according to an embodiment of the present invention.
7 is a perspective view of a target rotating body according to an embodiment of the present invention.
8A and 8B are schematic sectional views of a target rotating body.
9A and 9B are sectional views of a target rotating body according to an embodiment of the present invention.
10A to 10D are schematic cross-sectional side views of an apparatus for manufacturing an electronic device according to an embodiment of the present invention.
11 is a sectional view of a target rotating body according to another embodiment of the present invention.
12 is a schematic cross-sectional side view of an apparatus for manufacturing an electronic device according to another embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, where a section such as a layer, a film, an area, a plate, or the like is referred to as being "on" another section, it includes not only the case where it is "directly on" another part but also the case where there is another part in between. On the contrary, where a section such as a layer, a film, an area, a plate, etc. is referred to as being "under" another section, this includes not only the case where the section is "directly underneath"

Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are shown enlarged from the actual for the sake of clarity of the present invention. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by terms. Terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. The singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A, 1B, and 1C are schematic perspective views of an electronic device according to an embodiment of the invention.

1A, 1B and 1C, an electronic device 10 according to an embodiment of the present invention may include a flexible substrate FB and a conductive pattern CP. The conductive pattern CP may be stacked on the flexible substrate FB in the first direction DR1.

The flexible substrate FB is not particularly limited as long as it can be used normally, but may include plastic, organic polymer, and the like. Examples of the organic polymer constituting the flexible substrate FB include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, and polyether sulfone.

The electronic device 10 according to an embodiment of the present invention may operate in a first mode or a second mode. The flexible substrate FB may include a bending portion BF and a non-bending portion NBF extending in the second direction DR2. The bending portion BF is bent on the bending axis BX extending in the second direction DR2 in the second mode and can be unfolded in the first mode.

The bending portion NBF is connected to the non-bending portion NBF. The unbending portion NBF does not cause bending in each of the first mode and the second mode. The conductive pattern CP extends in the third direction DR3 which intersects the second direction DR2. At least a part of the conductive pattern CP is provided on the bending portion BF. Bending may mean that the flexible substrate FB or the like is bent into a specific shape by an external force.

Referring to FIG. 1A, the bending portion BF of the electronic device 10 can be unfolded in the first mode. Referring to FIG. 1B, in the second mode, at least a part of the flexible substrate FB and the conductive pattern CP may be bended.

The second mode includes a first bending mode and a second bending mode. Referring to FIG. 1B, the electronic device 10 according to an embodiment of the present invention may be bent in either direction with respect to the bending axis BX in the first bending mode. The electronic device 10 may be an inner bend in the first bending mode. Hereinafter, when the electronic device 10 is bent with respect to the bending axis BX and the bending distance between the opposing conductive patterns CP is shorter than the distance between the flexible boards FB facing each other, Is defined as inner bending. In the inner bending, the bending portion BF may have a first radius of curvature R1.

Referring to FIG. 1C, the electronic device 10 according to an embodiment of the present invention may be bent in a direction opposite to the direction bending in FIG. 1B with respect to the bending axis BX in the second bending mode. The electronic device 10 may be outwardly bent in the second bending mode. Hereinafter, when the electronic device 10 is bent with respect to the bending axis BX and the distance between the bending flexible substrates FB facing each other is shorter than the distance between the opposing conductive patterns CP Is defined as outer bending. At the time of outer bending, the bending portion BF may have a second radius of curvature R2. The second radius of curvature R2 may be equal to or different from the first radius of curvature R1.

In FIGS. 1B and 1C, when the electronic device 10 is bent with respect to the bending axis BX, the distance between the bending flexible substrates FB and the flexible substrates FB is constant. However, , But the distance between the flexible substrates FB that are bent and facing each other may not be constant. In FIGS. 1B and 1C, when the electronic device 10 is bent with respect to the bending axis BX, the areas of the bending flexible substrates FB are opposite to each other. However, However, the areas of the flexible boards FB that are bent and facing each other may be different from each other.

FIG. 2A is a cross-sectional view of a schematic conductive pattern corresponding to line I-I 'of FIG. 1B, and FIG. 2B is a cross-sectional view of a conductive pattern AA' of FIG.

Referring to Figs. 1A to 1C, 2A and 2B, at least a part of the conductive pattern CP may be provided on the bending portion BF. The conductive pattern CP has a plurality of grains. The grain (GR) can be defined as a grain formed by regularly arranging component atoms and the like. The grains GR may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm).

The conductive pattern CP may be at least one of a metal, an alloy of a metal, and a transparent conducting oxide, although the conductive pattern CP is not particularly limited as long as it is commonly used. The grains GR may be at least one of grains of a metal, grains of an alloy, and grains of a transparent conductive oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

The conductive pattern CP may include a plurality of conductive pattern layers CPL stacked in a first direction DR1. The conductive pattern CP may include, for example, two or more conductive pattern layers (CPL).

In one embodiment of the present invention, the conductive pattern CP may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2. The second conductive pattern layer CPL2 may be provided on the first conductive pattern layer CPL1.

The first conductive pattern layer CPL1 and the second conductive pattern layer CPL2 may be formed of materials different from each other. The thicknesses of the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2 may be the same or different from each other. For example, the first conductive pattern layer CPL1 may include Al, and the second conductive pattern layer CPL2 may include Ti.

The first and second grains GR1 and GR2 included in the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2 are not connected to each other. That is, the first grains GR1 and the second grains GR2 may be mixed with each other at a boundary between the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2. Hereinafter, a layer in which the first grains GR1 and the second grains GR2 are mixed at the boundary between the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2 is defined as a mixed layer CPLM.

The mixed layer CPLM is a layer in which the first grains GR1 and the second grains GR2 are partially mixed in the process of continuously forming the second conductive pattern layer CPL2 on the first conductive pattern layer CPL1. The thickness of the mixed layer CPLM may be provided in a ratio of more than about 0 to about 0.05 with respect to the thickness of the conductive pattern CP.

3 is a schematic perspective view of an electronic device according to an embodiment of the present invention.

Referring to FIG. 3, an electronic device 100 according to an embodiment of the present invention may include a touch screen panel (TSP) and a flexible display panel (DP). The touch screen panel TSP may be stacked in the first direction DR1 on the flexible display panel DP. As mentioned above, the electronic device 100 according to an embodiment of the present invention can operate in the first mode or the second mode.

At least one of the flexible display panel DP and the touch screen panel TSP may include a conductive pattern CP. The conductive pattern CP may include a plurality of conductive pattern layers.

4 is a cross-sectional view of one pixel included in an electronic device according to an embodiment of the present invention.

Hereinafter, the flexible display panel DP will be described as an organic light-emitting display panel, but the present invention is not limited thereto. The flexible display panel may be a liquid crystal display panel, a plasma display panel, An electrophoretic display panel, a microelectromechanical system display panel, and an electrowetting display panel.

Referring to FIGS. 1A to 1C and 4, the flexible display panel DP may include a conductive pattern CP provided on a flexible substrate FB1 and a flexible substrate FB1.

Referring to FIG. 4, one pixel of the flexible display panel DP may include a thin film transistor (TFT) for driving the organic light emitting element OEL. In an embodiment of the present invention, a single thin film transistor (TFT) included in one pixel has been described, but the present invention is not limited thereto, and a plurality of thin film transistors may be included in one pixel.

The thin film transistor TFT includes a control electrode CE receiving a control signal, an input electrode IE receiving a data signal, a semiconductor pattern SM transmitting a data signal to the output electrode OE in response to a control signal, And an output electrode OE for outputting a data signal.

The first electrode EL1 is connected to the output electrode OE of the thin film transistor TFT. A common voltage is applied to the second electrode EL2 and the light emitting layer EML of the organic light emitting element OEL can emit light according to an output signal of the thin film transistor TFT to provide an image. The first electrode EL1 and the second electrode EL2 will be described later in more detail.

The flexible display panel DP includes a thin film element layer TEL including a thin film transistor TFT, a display element layer DEL provided on the thin film element layer TEL and including an organic light emitting element OEL, And an encapsulation layer SL provided on the device layer DEL.

A semiconductor pattern SM may be provided on the flexible substrate FB1. The semiconductor pattern SM is formed of a semiconductor material and can operate as an active layer of a thin film transistor (TFT). The semiconductor pattern SM includes an input area IA, an output area OA and a channel part CA provided between the input area IA and the output area OA. The semiconductor pattern SM may be formed of an inorganic semiconductor or an organic semiconductor. The input region IA and the output region OA may be formed by doping an n-type impurity or a p-type impurity into a semiconductor material.

A first insulating layer IL1 is provided on the semiconductor pattern SM. The first insulating layer IL1 may cover the semiconductor pattern SM. The first insulating layer IL1 may be formed of an organic insulating material or an inorganic insulating material.

A control electrode CE is provided on the first insulating layer IL1. The control electrode CE may be formed to cover an area corresponding to the channel portion CA of the semiconductor pattern SM. The control electrode CE may comprise a plurality of layers.

A second insulating layer IL2 may be provided on the control electrode CE and the first insulating layer IL1. The second insulating layer IL2 covers the control electrode CE. The second insulating layer IL2 may be formed of an organic insulating material or an inorganic insulating material.

An input electrode IE and an output electrode OE may be provided on the second insulating layer IL2. The output electrode OE is in contact with the output area OA of the semiconductor pattern SM by the first contact hole CH1 formed in the first insulating layer IL1 and the second insulating layer IL2, IE can contact the input region IA of the semiconductor pattern SM by the first contact hole CH2 formed in the first insulating layer IL1 and the second insulating layer IL2. The input electrode IE and the output electrode OE may comprise a plurality of layers.

A passivation layer PL is provided on the input electrode IE and the output electrode OE. The passivation layer PL may serve as a protective film for protecting the thin film transistor (TFT), and may serve as a planarization film for planarizing the upper surface thereof.

A first electrode EL1 is provided on the passivation layer PL. The first electrode EL1 may be, for example, a cathode. The first electrode EL1 is connected to the output electrode DE of the thin film transistor TFT through the third contact hole CH3 formed in the passivation layer PL.

On the passivation layer PL, a pixel defining layer (PDL) for partitioning the light emitting layer (EML) is provided. The pixel defining layer PDL exposes the top surface of the first electrode EL1. An organic light emitting element OEL is provided in a region surrounded by the pixel defining layer PDL. The organic light emitting diode OEL includes a first electrode EL1, a hole transporting region HTR, a light emitting layer EML, an electron transporting region ETR and a second electrode EL2.

The first electrode EL1 has conductivity. The first electrode EL1 may be a pixel electrode or an anode. The first electrode EL1 may include a plurality of layers. The first electrode EL1 may be a transmissive electrode, a transflective electrode, or a reflective electrode.

An organic layer may be disposed on the first electrode EL1. The organic layer includes a light emitting layer (EML). The organic layer may further include a hole transporting region (HTR) and an electron transporting region (ETR).

The hole transporting region HTR is provided on the first electrode EL1. The hole transporting region HTR may include at least one of a hole injecting layer, a hole transporting layer, a buffer layer, and an electron blocking layer.

The hole transporting region (HTR) may have a single layer of a single material, a single layer of a plurality of different materials, or a multi-layer structure having a plurality of layers of a plurality of different materials.

The light emitting layer (EML) is provided on the hole transporting region (HTR). The light emitting layer (EML) may have a single layer made of a single material, a single layer made of a plurality of different materials, or a multi-layered structure having a plurality of layers made of a plurality of different materials.

The light emitting layer (EML) is not particularly limited as long as it is a commonly used material. For example, the light emitting layer (EML) may be made of a material emitting red, green and blue light and may include a fluorescent material or a phosphorescent material. Further, the light emitting layer (EML) may include a host and a dopant.

An electron transporting region (ETR) is provided on the light-emitting layer (EML). The electron transport region (ETR) may include, but is not limited to, at least one of a hole blocking layer, an electron transporting layer, and an electron injection layer.

And the second electrode EL2 is provided on the electron transporting region ETR. The second electrode EL2 may be a common electrode or a cathode. The second electrode EL2 may include a plurality of layers. The second electrode EL2 may be a transmissive electrode, a transflective electrode, or a reflective electrode.

When the organic light emitting diode OEL is of the top emission type, the first electrode EL1 may be a reflective electrode and the second electrode EL2 may be a transmissive electrode or a transflective electrode. When the organic light emitting diode OEL is of a bottom emission type, the first electrode EL1 may be a transmissive electrode or a transflective electrode, and the second electrode EL2 may be a reflective electrode.

As a voltage is applied to the first electrode EL1 and the second electrode EL2 in the organic light emitting diode OEL, the holes injected from the first electrode EL1 pass through the hole transport region HTR The electrons injected from the second electrode EL2 are transferred to the light emitting layer EML via the electron transporting region ETR. Electrons and holes are recombined in the light emitting layer (EML) to generate an exciton, and the excitons emit as they fall from the excited state to the ground state.

An encapsulation layer SL is provided on the second electrode EL2. The sealing layer SL covers the second electrode EL2. The sealing layer SL may comprise at least one layer of an organic layer and an inorganic layer. The sealing layer SL may be, for example, a thin sealing layer. The sealing layer SL protects the organic light emitting element OEL.

At least one of the control electrode CE, the input electrode IE, the output electrode OE, the first electrode EL1, and the second electrode EL2 in the electronic device 100 according to the embodiment of the present invention. One may be the conductive pattern (CP) shown in FIG. 2A. That is, at least one of the control electrode CE, the input electrode IE, the output electrode OE, the first electrode EL1, and the second electrode EL2 may include a first conductive pattern including a plurality of first grains, And a second conductive pattern layer including a plurality of second grains.

5 is a plan view schematically illustrating a touch screen panel included in an electronic device according to an embodiment of the present invention.

Referring to Figs. 1A to 1C and Figs. 3 to 5, a touch screen panel TSP is provided on a flexible display panel DP. The touch screen panel TSP may be provided on the sealing layer (SL in Fig. 4). The touch screen panel (TSP) can recognize a user's direct touch, indirect touch of a user, direct touch of an object, or indirect touch of an object.

When a direct touch or an indirect touch is generated, for example, a capacitance change occurs between the first sensing electrodes Tx and the second sensing electrodes Rx included in the sensing electrode TE. The sensing signal applied to the first sensing electrodes Tx may be delayed and provided to the second sensing electrodes Rx according to the change of the capacitance. The touch screen panel (TSP) can sense the touch coordinates from the delay value of the sensing signal.

Although the touch screen panel TSP according to one embodiment of the present invention has been described as being driven in an electrostatic capacity mode, the present invention is not limited thereto. The touch screen panel TSP may be driven in a resistive manner. In addition, the touch screen panel TSP may be driven by any one of a self cap method and a mutual cap method.

The touch screen panel TSP may include a conductive pattern CP provided on the flexible display panel DP. The conductive pattern CP is electrically connected to the sensing electrode TE, the first bridge BD1, the second bridge BD2, the first connection wiring TL1, the second connection wiring TL2, the first fan- PO1), and a second fan-out wiring PO2.

The sensing electrode TE is provided on the sealing layer SL. Although not shown, a separate flexible substrate may be provided between the sensing electrode TE and the sealing layer SL. The sensing electrode TE may comprise a plurality of layers.

The sensing electrode TE includes first sensing electrodes Tx and second sensing electrodes Rx. The first sensing electrodes Tx and the second sensing electrodes Rx are electrically insulated from each other. Each of the first sensing electrodes Tx and the second sensing electrodes Rx may be formed in a substantially rhombic, square, rectangular, circular or unformed shape (e.g., a dendrite structure, Shape), and the like. Each of the first sensing electrodes Tx and the second sensing electrodes Rx may have a mesh shape.

Referring to FIG. 5, the first sensing electrodes Tx and the second sensing electrodes Rx may be provided on the same layer. Each of the first sensing electrodes Tx and the second sensing electrodes Rx may be provided on the sealing layer SL. The first sensing electrodes Tx may be provided in a second direction DR2 and in a third direction DR3. The first sensing electrodes Tx spaced in the second direction DR2 may be connected by the first bridge BD1. The first bridge BD1 may be composed of a plurality of layers.

The second sensing electrodes Rx may be provided in a second direction DR2 and a third direction DR3. The second sensing electrodes Rx spaced in the third direction DR3 may be connected by the second bridge BD2. The second bridge BD2 may be provided on the first bridge BD1. The second bridge BD2 may be composed of a plurality of layers. Although not shown, an insulating layer may be provided between the second bridge BD2 and the first bridge BD1.

The connection wirings TL1 and TL2 are electrically connected to the sensing electrode TE. The connection wirings TL1 and TL2 may be composed of a plurality of layers.

The connection wirings TL1 and TL2 include first connection wirings TL1 and second connection wirings TL2. The first connection wirings TL1 may be connected to the first sensing electrodes Tx and the first fan-out wirings PO1. The second connection wirings TL2 may be connected to the second sensing electrodes Rx and the second fan-out wirings PO2.

The fan-out wirings PO1 and PO2 are connected to the connection wirings TL1 and TL2 and the pad portions PD1 and PD2. The fan-out wirings PO1 and PO2 may be composed of a plurality of layers. The fan-out wirings PO1 and PO2 include first fan-out wirings PO1 and second fan-out wirings PO2. The first fan-out lines PO1 are connected to the first connection lines TL1 and the first pad portion PD1. The second fan-out wirings PO2 are connected to the second connection wirings TL2 and the second pad portion PD2.

The pad portions PD1 and PD2 are electrically connected to the sensing electrode TE. The pad portions PD1 and PD2 may be formed of a plurality of layers. The pad portions PD1 and PD2 include a first pad portion PD1 and a second pad portion PD2. The first pad portion PD1 is connected to the first fan-out lines PO1. The first pad unit PD1 may be electrically connected to the first sensing electrodes Tx. And the second pad portion PD2 is connected to the second fan-out lines PO2. The second pad portion PD2 may be electrically connected to the second sensing electrodes Rx.

In the embodiment of the present invention, the first sensing electrodes Tx and the second sensing electrodes Rx are provided on the same layer. However, the present invention is not limited thereto, and the first sensing electrodes Tx and the second sensing electrodes Rx may be provided on different layers from each other. For example, the first sensing electrodes Tx may be provided on the sealing layer SL, and an insulating layer may be provided on the first sensing electrodes Tx. And the second sensing electrodes Rx may be provided on the insulating layer.

Hereinafter, with reference to the drawings, an apparatus for manufacturing an electronic device for manufacturing an electronic device 10 according to an embodiment of the present invention will be described. Hereinafter, for convenience of explanation, the components described above are denoted by the same reference numerals, and redundant description of the components is omitted.

FIG. 6 is a schematic view of an apparatus for manufacturing an electronic device according to an embodiment of the present invention, and FIG. 7 is a perspective view of a target rotating body according to an embodiment of the present invention.

1A to 1C, 6 and 7, an apparatus for manufacturing an electronic device according to an embodiment of the present invention includes a chamber 1000, a stage ST, a target rotating body RT, a rotation driving unit RP ), And a fixing portion (FP).

In an embodiment of the present invention, a deposition process for forming a conductive pattern CP on the flexible substrate FB in the chamber 1000 is performed. The chamber 1000 accommodates a stage ST, a target rotating body RT, a rotation driving unit RP, and a fixing unit FP.

The flexible substrate FB may be provided on the stage ST. The stage ST can fix and support the flexible substrate FB.

The target rotating body RT is disposed on the stage ST on which the flexible substrate FB is disposed. The target rotating body RT may be spaced apart from the flexible substrate FB by a predetermined distance. The target rotating body RT can supply the evaporation material to the flexible substrate FB.

Referring to FIG. 7, the target rotating body RT may have a cylindrical shape extending along the third direction DR3. The target rotating body RT may be rotated about the rotation axis RX extending in the third direction DR3.

The target rotating body RT may include a body portion BP extending in the third direction DR3 and side portions SP perpendicular to the third direction DR3 and connected to the body portion BP. The side portions SP of the target rotating body RT are spaced apart from each other by the length of the body portion BP extending in the third direction DR3.

The outer surface of the body part BP may be divided into a first area AR1 extending along the third direction DR3 and a second area AR2 adjacent to the first area AR1. Different deposition materials are provided from the first region AR1 and the second region AR2 of the target rotating body RT. That is, the body portion BP of the target rotating body RT corresponds to the first target portion T1 and the second region AR2 corresponding to the first region AR1 and provided with the first deposition material, And a second target portion T2 to which a second deposition material M2 different from the deposition material M1 is provided. Although the area of the second area AR2 is larger than that of the first area AR1 in the present embodiment, the area ratio of the first area AR1 and the second area AR2 is not limited thereto, It can be changed as needed.

The rotation drive unit RP may be connected to each of the side portions SP of the target rotating body RT to rotate the target rotating body RT around the rotation axis RX. The rotation driving unit RP can adjust the rotation speed of the target rotating body RT.

The fixing part FP is disposed between the rotation driving part RP and the chamber 1000 and can fix the rotation driving part RP and the target rotating body RT to the chamber 1000. [

8A and 8B are schematic sectional views of a target rotating body.

7, 8A and 8B, the target rotating body RT may be provided in a cylindrical shape having a certain inner space. The body part BP of the target rotating body RT may have an inner side IS which opposes the outer side OS and the outer side OS exposed to the outside and defines a certain inner space.

The first deposition material M1 may be positioned on the outer side OS of the first target portion T1 and the second deposition material M2 may be positioned on the outer side OS of the second target portion T2. can do. Although not shown, the first deposition material M1 may be injected into the first target portion T1 from a certain inner space, and the second deposition material M2 may be injected from the certain inner space into the second target portion T2. .

In one embodiment of the present invention, magnets MG may be provided in certain interior spaces. Each of the magnets MG may extend in the third direction DR3.

The magnets MG are arranged on the rotation axis RX of the target rotating body RT so that the magnets MG can be seen from the side of the target rotating body RT parallel to the plane defined by the first direction DR1 and the second direction DR2. And may be offset from a center of the inner surface IS.

Some of the magnets MG may have different polarities. 8A and 8B, two magnets MG1 having the same polarity to each other and one magnet MG2 disposed between the two magnets and having a polarity different from that of the two magnets are arranged as an example However, the number of magnets is not limited to this, and two or more magnets may be provided. Further, at least one magnet may have a polarity different from that of any one of the remaining magnets.

The ions generated by the plasma gas injected into the chamber 1000 are accelerated by the voltage applied to the target rotating body RT to sputter the deposition material. The charge particles (M1-P) sputtered from the deposition material can be captured along the magnetic force lines MF formed by the magnets MG. Thus, it is possible to perform the deposition process intensively on a specific portion of the flexible substrate FB.

9A and 9B are sectional views of a target rotating body according to an embodiment of the present invention.

9A, as the target rotating body RT is rotated clockwise or counterclockwise about the rotation axis RX (see FIG. 7), the first target portion T1 and the second target portion T2 are rotated in the clockwise or counterclockwise direction, Can be changed. At this time, the position of the magnet MG may be fixed without being changed.

Referring to FIG. 9B, the position of the target rotating body RT is fixed, and the magnet MG can move and change its position. The magnet MG can rotate clockwise or counterclockwise along the inner surface IS of the target rotating body RT about the rotation axis RX. At this time, as the magnet MG moves, it is possible to adjust the direction in which the deposition material is provided. However, the present invention is not limited to this, and the magnet MG may be positioned at different positions while the target rotating body RT moves.

10A to 10D are schematic cross-sectional views of an apparatus for manufacturing an electronic device according to an embodiment of the present invention, schematically showing a method of forming a conductive pattern CP on a flexible substrate FB.

10A to 10D illustrate a deposition region ER of a flexible substrate FB on which deposition materials supplied from a supply region SR and a supply region SR from which a deposition material is supplied from a target rotating body RT are deposited . When the deposition material supplied from the target rotating body RT is radially provided to the flexible substrate FB, the supply region SR is defined in a part of the target rotating body RT opposite to the flexible substrate FB . The deposition area ER can be determined according to the area of the supply area SR and the deposition area ER can be a part of the flexible substrate FB or the front surface of the flexible substrate FB.

The first deposition material M1 and the second deposition material M2 may be supplied in a plurality of modes defined as the target rotating body RT rotates about the rotation axis RX. 10A shows a first mode in which the first target portion T1 faces the flexible substrate FB and the first deposition material M1 is supplied to the flexible substrate FB, And the second deposition material M2 is supplied to the flexible substrate FB while the second deposition material T2 faces the flexible substrate FB. 10B shows a state in which a portion of the first target portion T1 and a portion of the second target portion T2 face the flexible substrate FB at the same time and the first deposition material M1 and the second deposition material M2 And is supplied to the flexible substrate FB. Hereinafter, Figs. 10A to 10C illustrate examples in which modes are changed in the order of the first mode, the third mode, and the second mode according to time.

In the first mode, the second mode, and the third mode, the rotational speeds of the target rotating body RT may be different from each other. However, the present invention is not limited to this. The rotation speeds of the target rotating body RT in the first mode, the second mode, and the third mode may be the same or may be different from each other in any one of the first mode, the second mode, Mode.

Referring to FIG. 10A, in the first mode, the first target portion T1 may provide the first deposition material M1 on the flexible substrate FB. As a result, as shown in FIG. 10B, a first conductive pattern layer CPL1 including a first deposition material M1 is formed on the flexible substrate FB.

After the first conductive pattern layer CPL1 is formed, the target rotating body RT is rotated clockwise or counterclockwise in the first mode to the third mode.

At this time, a part of the first target portion T1 and a portion of the second target portion T2 become the supply region SR. The first deposition material M1 is supplied from one portion of the first target portion T1 and the second deposition material M2 is supplied from a portion of the second target portion T2, The first deposition material M1 and the second deposition material M2 may be simultaneously deposited on the first substrate CPL1. As a result, as shown in FIG. 10C, a mixed layer (CPLM) in which the first deposition material M1 and the second deposition material M2 are mixed is formed on the first conductive pattern layer CPL1. The mixed layer CPLM may be formed while the target rotating body RT is rotating.

Referring to FIG. 10C, the target rotating body RT may be rotated from the third mode to the second mode. The second target portion T2 may provide the second deposition material M2 on the mixed layer CPLM. As a result, as shown in FIG. 10D, a second conductive pattern layer CPL2 including a second deposition material M2 is formed on the mixed layer CPLM.

The thickness of the mixed layer CPLM in the conductive pattern CP may be provided in a ratio of more than about 0 and about 0.05 or less of the total thickness of the conductive pattern CP.

The surface area of the second target portion T2 is larger than the surface area of the first target portion T1 so that the second conductive pattern CPL2 is thicker than the first conductive pattern CPL1 Respectively. The thickness of the first conductive pattern layer CPL1 and the thickness of the second conductive pattern layer CPL2 may be different from each other in the ratio of the surface area of the first target portion T1 to the thickness of the second target portion T2 .

Meanwhile, the target rotating body RT may be driven in various modes in each mode. For example, the target rotating body RT may continuously rotate in each mode, or temporarily stop and then rotate. Further, the rotational speed in each mode of the target rotating body RT may be constant or may vary with time. Further, the rotational directions in the respective modes of the target rotating body RT may be different, and may be unidirectional or bidirectional.

In addition, the first conductive pattern layer CPL1, the mixed layer CPLM, and the second conductive pattern layer (second conductive pattern layer) may be formed by varying the rotational speed of the target rotating body RT in the first mode, the second mode, It is possible to form the thickness of the CPL2 differently.

An apparatus for manufacturing an electronic device according to an embodiment of the present invention includes a conductive pattern CP having a plurality of layers including different deposition materials using one target rotating body RT in one chamber 1000, The movement time between the chambers 1000 can be shortened and the processing time can be shortened. Further, as the conductive pattern CP having a plurality of layers is formed in one chamber 1000, metal oxide can be prevented from being formed between the plurality of layers. Thus, the adhesion between the plurality of layers is improved, and the sheet resistance characteristics between the plurality of layers can be improved. As a result, it is possible to provide the electronic device (10, 100) including the conductive pattern (CP) with improved bending characteristics.

11 is a sectional view of a target rotating body according to another embodiment of the present invention.

11, the body portion BP of the target rotating body RT-1 according to another embodiment of the present invention includes a first portion AR1 corresponding to the first region AR1, A second target portion T2 corresponding to the target portion T1 and the second region AR2 and provided with the second deposition material M2 and a third deposition material M3 corresponding to the third region AR3, And a third target portion T3 provided. The third target portion T3 may be positioned between the first target portion T1 and the second target portion T2. The third deposition material M3 may be different from the first deposition material M1 and the second deposition material M2 or may be the same as the first deposition material M1 or the second deposition material M2. In the present embodiment, the areas of the first target portion T1, the second target portion T2, and the third target portion T3 are the same, but the present invention is not limited thereto. The first target portion T1, The second target portion T2, and the third target portion T3 may vary as needed.

As the first to third deposition materials M1, M2 and M3 are provided from the target rotating body RT-1, the target rotating body RT-1 of the honeycomb is used in one chamber 1000 A conductive pattern CP composed of a plurality of layers can be easily fabricated on the flexible substrate FB.

12 is a schematic cross-sectional side view of an apparatus for manufacturing an electronic device according to another embodiment of the present invention.

Referring to FIG. 12, an apparatus for manufacturing an electronic device according to another embodiment of the present invention may include a plurality of target rotating bodies. 12, the first target rotating body RT1 and the second target rotating body RT2 are disposed on the flexible substrate FB at a predetermined distance from each other. However, the present invention is not limited to this, The number of target rotators may vary.

The first supply region SR1 from which the deposition material is supplied from the first target rotating body RT1 corresponds to the first deposition region ER1 in which the evaporation material is deposited on the flexible substrate FB, The second supply region SR2 to which the deposition material is supplied from the second substrate region RT2 corresponds to the second deposition region ER2 in which the deposition material is deposited on the flexible substrate FB. The first deposition region ER1 and the second deposition region ER2 may correspond to the entire deposition region ER of the flexible substrate FB and the area ratios thereof may be different from each other.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. It will be understood that various modifications and changes may be made thereto without departing from the scope of the present invention.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

FB: Flexible substrate CP: Conductive pattern
TSP: Touch screen panel DP: Flexible display panel
1000: chamber RT: target rotating body
T1: first target portion T2: second target portion
M1: first deposition material M2: second deposition material
SR: supply area DE: deposition area

Claims (17)

A stage for supporting a substrate;
A target rotating body disposed on the substrate and extending along one direction, the target rotating body supplying a first deposition material and a second deposition material different from each other to the substrate; And
And a chamber for receiving the stage and the target rotating body,
The target rotating body may include:
A first target portion located in a first region extending along the one direction of the target rotating body, the first target portion supplying the first deposition material; And
And a second target portion connected to the first target portion and located in a second region adjacent to the first region of the target rotating body for supplying the second deposition material. The method according to claim 1,
Wherein the first deposition material and the second deposition material are supplied in a plurality of modes defined as the target rotating body rotates about an axis of rotation extending along the one direction,
A first mode in which the first target portion faces the substrate and the first deposition material is supplied to the substrate; And
And a second mode in which the second target portion faces the substrate and the second deposition material is supplied to the substrate. 3. The method of claim 2,
Wherein the plurality of modes further comprise a third mode in which a portion of the first target portion and a portion of the second target portion simultaneously face the substrate,
In the third mode, a portion of the first target portion provides the first deposition material on the substrate, and a portion of the second target portion provides the second deposition material on the substrate. Manufacturing apparatus. 3. The method of claim 2,
Wherein the rotation speed of the target rotating body in the first mode and the rotation speed of the target rotating body in the second mode are different from or different from each other. 3. The method of claim 2,
Wherein the target rotating body is provided in a cylindrical shape having an outer side surface and an inner side surface. 6. The method of claim 5,
And a magnet housed in an inner space defined by the inner surface of the target rotating body, wherein the magnet is surrounded by the target rotating body. The method according to claim 6,
Wherein the magnet is located in an area of the inner surface of the target rotating body that is adjacent to the substrate. 8. The method of claim 7,
Wherein the magnet is rotatable along the inner surface of the target rotating body about the rotation axis. 6. The method of claim 5,
A rotation driving unit for rotating the target rotating body about the rotation axis; And
And a fixing unit disposed between the rotation driving unit and the chamber and fixing the rotation driving unit and the target rotating body to the chamber,
Wherein the rotation driving portion is connected to one side portion connecting the outer side surface and the inner side surface of the target rotating body and the other side portion opposing the one side portion. The method according to claim 1,
Wherein the target rotating body is positioned between the first target portion and the second target portion and corresponds to a third region adjacent to the first region and the second region of the target rotating body, And a third target portion for supplying the third target portion. The method according to claim 1,
Wherein the target rotating bodies may be provided in a plurality of locations, and the target rotating bodies are arranged in parallel spaced apart from each other by a predetermined distance. A flexible substrate including a bending portion; And
At least a portion of which comprises a conductive pattern provided on the bending portion,
The conductive pattern
A first conductive pattern layer including a first deposition material;
A second conductive pattern layer provided on the first conductive pattern layer and including the second deposition material different from the first deposition material; And
And a mixed layer provided between the first conductive pattern layer and the second conductive pattern layer and including the first deposition material and the second deposition material. 13. The method of claim 12,
Wherein a thickness ratio of the mixed layer to a thickness of the conductive pattern is more than 0 and not more than 0.05. 13. The method of claim 12,
Wherein the conductive pattern includes a sensing electrode including first sensing electrodes and second sensing electrodes spaced apart from each other by a predetermined distance. 13. The method of claim 12,
Wherein the flexible substrate includes a thin film element layer, a display element layer, and a thin film sealing layer, and the conductive pattern is disposed on the thin film sealing layer. Providing a substrate on a stage;
Positioning a target rotating body extending in one direction on the substrate, the target rotating body including a first target portion supplying a first deposition material and a second target portion supplying a second deposition material; And
And rotating the target rotating body around a rotation axis extending along the one direction to deposit the first deposition material and the second deposition material,
Wherein depositing the first deposition material and the second deposition material comprises:
Forming a first conductive pattern layer by supplying the first deposition material onto the substrate while the first target portion faces the substrate;
Forming a mixed layer by supplying the first deposition material and the second deposition material onto the substrate while a portion of the first target portion and a portion of the second target portion face the substrate; And
And supplying the second deposition material onto the mixed layer while the second target portion faces the substrate to form a second conductive pattern layer. 17. The method of claim 16,
Wherein the first target portion is located in a first region of the target rotating body extending in the one direction and the second target portion is connected to the first target portion, ≪ / RTI >

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